Polycrystalline diamonds (PCD) has high thermal conductivity and as heat sinks in semiconductor power devices. However, PCD exhibits high hardness and strong chemical inertness lead to lower processing efficiency and increase processing costs. Hence, achieving efficiently obtain high-quality PCD surfaces is crucial. In this study, we investigated the tribological behavior of PCD in different environments (deionized water, H2O2 + UV, Fenton, and photo-Fenton) and under different photo-Fenton conditions (pH, light intensity, Fe3O4 concentration, and H2O2 concentration) via Si3N4 ball-disk friction and wear experiments. The photo-Fenton reaction improved the material removal rate of PCD, which was the highest (285.4 μm3/min) under optimized conditions of pH = 3, 100 mW/cm2 light intensity, 2 wt% Fe3O4 concentration, and 10 wt% H2O2 concentration. Based on the friction and wear experimental results and X-ray photoelectron spectroscopy, we propose a material removal mechanism for PCD. The hydroxyl radical (·OH) produced by the photo-Fenton reaction oxidize the PCD surface to form CO, CO, and C–OH groups, which are converted into C–O–Si bridge bonds on the PCD surface, resulting in material removal. Our study findings provide theoretical support for the photo-Fenton reaction -assisted CMP of PCD.