Bottom Distributed Bragg Reflector Research Articles

Vertical InGaN Light-Emitting Diode with Hybrid Distributed Bragg Reflectors.

A vertical-type InGaN light-emitting diode with a resonant cavity was demonstrated with a 9 μm aperture size and a short cavity formed by hybrid distributed Bragg reflectors (DBRs). The approach involved designing epitaxial structures and utilizing an electrochemical etching process to convert heavily doped n-type gallium nitride (n+-GaN) layers into porous GaN layers as a porous-GaN DBR structure. Thirteen pairs of the conductive porous-GaN:Si/GaN:Si DBR structure provided a vertical current path in a vertical-type light-emitting diodes (LED) structure. The LED epitaxial layers were separated from sapphire for membrane-type LED structures through a laser lift-off process. During the free-standing membrane fabrication process, the dielectric DBR deposited on ITO/p-GaN:Mg layers was inverted from top to bottom, thereby establishing the concept of higher reflectivity for the bottom DBR compared to the porous-GaN DBR. The physical cavity length was reduced from about 2.3 μm for the LED membrane to 0.74 μm for the membrane-type LED with the embedded porous-GaN DBR structure. The divergent angles and line width of EL emission light were reduced from 124°/31.7 nm to 44°/3.3 nm due to the resonant cavity effect. The membrane-type LED structures with hybrid DBRs consisted of small divergent angles, narrow line width, and vertical current injection properties that have potential for directional emission light sources and vertical-cavity surface-emitting diode laser applications.

Microcavity enhancement vs Auger recombination in variable thickness type-II superlattices in resonant cavity mid-infrared light emitting diodes

In this study, we investigate the tradespace between the improvement of mid-infrared light-emitting diode efficiency through microcavity enhancement vs reduction of Auger recombination for different W-superlattice thicknesses. Several sample designs are modeled and then grown and fabricated to test the tradespace at different W-superlattice thicknesses down to the quantum well limit. In a half-cavity, with a single reflector from the top metal contact, intermediate thickness W-superlattices gave the highest efficiencies, outperforming those in the W-quantum well limit across the entire measured current range. Experimentally, we report wallplug efficiencies of 0.4% for a room temperature 3.2 μm device. W-superlattices of intermediate thickness were also found to be optimal for a full-cavity device with a bottom distributed Bragg reflector added. The resonant full cavity did strongly improve the peak spectral radiance, with a measured increase of four to five times for a 3.6 μm device, and a value that is >250 times larger than previously reported.

Tunable structured AlGaN-based nanoporous distributed Bragg reflectors for light-coupling enhancement in monolayer MoS2

In this work, we demonstrated tunable structured AlGaN-based nanoporous (NP) distributed Bragg reflectors (DBRs) with high-reflectivity through one-step vertical-lateral electrochemical etching (ECE). The aperture of nanopores in the doping layer and the size and density of V-pits on the surface of NP-DBRs can be tuned by controlling the etching bias. Furthermore, by further tuning the thickness of alternating layers, we achieved high reflectivity of NP-DBRs at multiple center wavelengths within the wavelength range from 280 to 800 nm. To explore its potential applications, MoS2 with a photoluminescence (PL) emission in the red light region was grown for the first time on the NP-DBRs. Due to the light localized effect of surface V-pits and the high reflectivity of the bottom DBRs, the PL intensity of MoS2 was significantly enhanced by a factor of 37.3 compared to the region without NP-DBRs. The PL enhancement of MoS2 on porous AlGaN and different periodic NP-DBRs further validated the PL enhancement mechanism. The corresponding theoretical simulations also revealed that the PL enhancement should be attributed to the combined effect of enhanced light absorption and NP-DBRs induced emission interference. The fabricated AlGaN-based NP-DBRs provide a new approach for improving the quantum efficiency of two-dimensional layered materials, which holds significant importance for advancing the development of miniaturized and integrated 2D/3D heterogeneous structure systems in the field of optoelectronics.

Design of a dual-channel narrow band filter based on metasurface

We proposed a dual-channel narrow band filter consisting of top and bottom-distributed Bragg reflectors (DBRs) and a dielectric interlayer inserted with a metasurface. Through the design of the metasurface, the two channels of the filter are guaranteed to exhibit high-quality factors with transmittance beyond 90% and full width at half maximum (FWHM) less than 10 nm. We demonstrate that the central wavelengths of each dual-channel filter can be controlled with a total of 50 nm shifts by only changing the width of the metasurface. Compared with the traditional dual-channel filter, our design is easier to fabricate and more convenient to tune the central wavelength, which is promising for ultracompact optical devices.

Distributed Bragg Reflector–Mediated Excitation of InAs/InP Quantum Dots Emitting in the Telecom C‐Band

Herein, it is demonstrated that optical excitation of InAs quantum dots (QDs) embedded directly in an InP matrix can be mediated via states in a quaternary compound constituting an InP/InGaAlAs bottom distributed Bragg reflector (DBR) and native defects in the InP matrix. It does not only change the carrier relaxation in the structure but could also lead to the imbalanced occupation of QDs with charge carriers, because the band structure favors the transfer of holes. Thermal activation of carrier transfer can be observed as an increase in the emission intensity versus temperature for excitation powers below saturation on the level of both an inhomogeneously broadened QD ensemble and single QD transitions. That increase in the QD emission is accompanied by a decrease in the emission from the InGaAlAs layer at low temperatures. Finally, carrier transfer between the InGaAlAs layer of the DBR and the InAs/InP QDs is directly proven by the photoluminescence excitation spectrum of the QD ensemble. The reported carrier transfer can increase the relaxation time of carriers into the QDs and thus be detrimental to the coherence properties of single and entangled photons. It is important to take it into account while designing QD‐based devices.

Lattice-matched AlInN/GaN bottom DBR impact on GaN-based vertical-cavity-surface-emitting laser diodes: systematical investigations.

In this paper, by using advanced numerical models, we investigate the impact of the AlN/GaN distributed Bragg reflector (DBR) and AlInN/GaN DBR on stimulated radiative recombination for GaN-based vertical-cavity-surface-emitting lasers (VCSELs). According to our results, when compared with the VCSEL with AlN/GaN DBR, we find that the VCSEL with AlInN/GaN DBR decreases the polarization-induced electric field in the active region, and this helps to increase the electron-hole radiative recombination. However, we also find that the AlInN/GaN DBR has a reduced reflectivity when compared with the AlN/GaN DBR with the same number of pairs. Furthermore, this paper suggests that more pairs of AlInN/GaN DBR will be set, which helps to even further increase the laser power. Hence, the 3dB frequency can be increased for the proposed device. In spite of the increased laser power, the smaller thermal conductivity for AlInN than AlN results in the earlier thermal droop in the laser power for the proposed VCSEL.

Design, Modeling, and Characterization of Hot Electron Light Emission and Lasing in Semiconductor Heterostructure-VCSOA with Optical Gain up to 36 dB

Vertical-cavity semiconductor optical amplifiers (VCSOAs) are interesting devices for optical communication applications. In this work, we have studied the characteristics of gain spectra and amplifier bandwidth in reflection mode at 1300 nm GaInNAs/GaAs hot electron light emission and lasing in semiconductor heterostructure-VCSOA structure using MATLAB program. The device contains 16 Ga0.7In0.3N0.038As0.962 multiple quantum wells (QWs) in its intrinsic region; the active region is bounded between eight pairs of GaAs/AlAs top distributed Bragg reflectors (DBRs) mirror and 25 pairs of AlAs/GaAs bottom DBRs mirror. Simulation results suggest that the resonance cavity of QW of HILLISH-VCSOA is varied with temperature and number of DBRs periods. We compare the relation between the wavelength and gain at a different single-pass gain in both reflection and transmission modes. The highest gain at around 36 dB is observed in reflection mode. Moreover, we calculated the amplifier bandwidth at different periods of top mirror’s reflectivity, in which when the peak reflection gains increases, the amplifier bandwidth decreases.

InP-based single-photon sources operating at telecom C-band with increased extraction efficiency

In this work, we demonstrate a triggered single-photon source operating at the telecom C-band with photon extraction efficiency exceeding any reported values in this range. The non-classical light emission with low probability of the multiphoton events is realized with single InAs quantum dots (QDs) grown by molecular beam epitaxy and embedded directly in an InP matrix. Low QD spatial density on the order of 5 × 108 cm−2 to ∼2 × 109 cm−2 and symmetric shape of these nanostructures together with spectral range of emission make them relevant for quantum communication applications. The engineering of extraction efficiency is realized by combining a bottom distributed Bragg reflector consisting of 25 pairs of InP/In0.53Ga0.37Al0.1 As layers and cylindrical photonic confinement structures. Realization of such a technologically non-demanding approach even in a non-deterministic fashion results in photon extraction efficiency of (13.3 ± 2) % into 0.4 numerical aperture detection optics at approximately 1560 nm emission wavelength, i.e., close to the center of the telecom C-band.

Wet-Etched Microlens Array for 200 nm Spatial Isolation of Epitaxial Single QDs and 80 nm Broadband Enhancement of Their Quantum Light Extraction.

Uniform arrays of three shapes (, , and ) of GaAs microlenses (MLs) by wet-etching are demonstrated, ∼200 nm spatial isolation of epitaxial single QDs embedded (: 890–990 nm) and broadband ( nm) enhancement of their quantum light extraction are obtained, which is also suitable for telecom-band epitaxial QDs. Combined with the bottom distributed Bragg reflector, the -shaped ML forms a cavity and achieves the best enhancement: extraction efficiency of 26%, Purcell factor of 2 and single-photon count rate of counts per second at the first lens; while the -shaped ML shows a broader band (e.g., longer ) enhancement. In the MLs, single QDs with featured exciton emissions are observed, whose time correlations prove single-photon emission with multi-photon probability ; some QDs show both biexciton and exciton X emissions and exhibit a perfect cascade feature. This work could pave a step towards a scalable array of QD single-photon sources and the application of QD photon-pair emission for entanglement experiments.

Design optimization for bright electrically-driven quantum dot single-photon sources emitting in telecom O-band.

A combination of advanced light engineering concepts enables a substantial improvement in photon extraction efficiency of micro-cavity-based single-photon sources in the telecom O-band at ∼1.3 µm. We employ a broadband bottom distributed Bragg reflector (DBR) and a top DBR formed in a dielectric micropillar with an additional circular Bragg grating in the lateral plane. This device design includes a doped layer in pin-configuration to allow for electric carrier injection. It provides broadband (∼8-10 nm) emission enhancement with an overall photon-extraction efficiency of ∼83% into the upper hemisphere and photon-extraction efficiency of ∼79% within numerical aperture NA=0.7. The efficiency of photon coupling to a single-mode fiber reaches 11% for SMF28 fiber (with NA=0.12), exceeds 22% for 980HP fiber (with NA=0.2) and reaches ∼40% for HNA fiber (with NA=0.42) as demonstrated by 3D finite-difference time-domain modeling.

Design and Modeling of High-Performance DBR-Based Resonant-Cavity-Enhanced GeSn Photodetector for Fiber-Optic Telecommunication Networks

In this work, we present a novel distributed Bragg reflector (DBR)-based resonant-cavity-enhanced (RCE) GeSn photodetector on Si substrates to achieve high-performance photodetection in terms of responsivity and 3-dB bandwidth (BW) for the short-wave infrared (SWIR) high-speed applications. The proposed structure consists of Si/SiO2 distributed Bragg reflectors (DBRs) to enhance the performance of the device. The top and bottom DBRs create a high-quality ( ${Q}$ ) optical cavity to enable multiple pass reflection schemes to increase the responsivity and also high wavelength selectivity with a sharp response. In addition, with an increase in Sn concentration in the active ( i- GeSn) layer, the photodetection range extends to longer wavelengths due to the shrinkage of bandgap energy. The calculated result shows an enhanced 3-dB BW and responsivity as compared to the existing p-i-n PDs. Therefore, the proposed DBR-based RCE GeSn PD can be a promising device for high-speed SWIR photodetection applications.

InGaN Resonant-Cavity Light-Emitting Diodes with Porous and Dielectric Reflectors

InGaN based resonant-cavity light-emitting diode (RC-LED) structures with an embedded porous-GaN/n-GaN distributed Bragg reflector (DBR) and a top dielectric Ta2O5/SiO2 DBR were demonstrated. GaN:Si epitaxial layers with high Si-doping concentration (n+-GaN:Si) in the 20-period n+-GaN/n-GaN stacked structure were transformed into a porous-GaN/n-GaN DBR structure through the doping-selective electrochemical wet etching process. The central wavelength and reflectivity were measured to be 434.3 nm and 98.5% for the porous DBR and to be 421.3 nm and 98.1% for the dielectric DBR. The effective 1λ cavity length at 432nm in the InGaN resonant-cavity consisted of a 30 nm-thick Ta2O5 spacer and a 148 nm-thick InGaN active layer that was analyzed from the angle-resolved photoluminescence (PL) spectra. In the optical pumping PL spectra, non-linear emission intensity and linewidths reducing effect, from 6.5 nm to 0.7 nm, were observed by varying the laser pumping power. Directional emission pattern and narrow linewidth were observed in the InGaN active layer with bottom porous DBR, top dielectric DBR, and the optimum spacer layer to match the short cavity structure.

Design of electrically driven single photon source based on dielectric passive cavity structure at 1.3 μm

A combination of advanced concepts is applied for designing micro-cavity structures aimed for single-photon sources with high photon-extraction efficiency in the telecom O-band at ~1.3 μm. The device design consists of a broad stop-band bottom distributed Bragg reflector (DBR), a top DBR formed in a dielectric micropillar with additional circular Bragg grating and a central dielectric passive cavity. This combination of photonic elements is compatible with electric carrier injection and provides overall photon-extraction efficiency of ~83% as shown by 3D finite-difference time-domain simulations.

Preparation and novel photoluminescence properties of the self-supporting nanoporous InP thin films

Self-supporting nanoporous InP membranes are prepared by electrochemical etching, and are then first transferred to highly reflective (> 96%) mesoporous GaN (MP-GaN) distributed Bragg reflector (DBR) or quartz substrate. By the modulation of bandgap, the nanoporous InP samples show a strong photoluminescence (PL) peak at 541.2 nm due to the quantum size effect of the nanoporous InP structure. Compared to the nanoporous InP membrane with quartz substrate, the nanoporous membrane transferred to DBR shows a twofold enhancement in PL intensity owing to the high light reflection effect of bottom DBR.

High performance planar microcavity organic semiconductor lasers based on thermally evaporated top distributed Bragg reflector

High performance organic semiconductor lasers (OSLs), especially those under current injection, have been sought for decades due to their potentially great applications in fields such as spectroscopy, displays, medical devices, and optical interconnection. The design and fabrication of high-quality resonators is a prerequisite for high performance OSLs. In the case of planar microcavities, the fabrication process of top distributed Bragg reflectors (DBRs) usually requires electron beam evaporation or manual lamination on top of organic thin-film layers, which can lead to issues including degradation of the organic materials, large-scale non-uniformity, and difficulties for current injection. Here, we report a non-destructive way of fabricating a top DBR by thermal evaporation. The top DBR based on thermally evaporated alternative TeOx/LiF stacks shows low morphological roughness, high process tolerance, and high reflectivity. Moreover, the deposition process causes negligible damage to the organic thin-film layers underneath. With the combination of a conventional e-beam evaporated bottom DBR, a high performance planar microcavity OSL with a low threshold of 1.7 μJ cm−2, an emission linewidth of 0.24 nm, and an angular divergence of <3° has been achieved under nitrogen laser pumping. Similar performance, with a high Gaussian beam quality comparable with that of an ideal diffraction-limited beam, was also obtained under diode pumping, showing the potential of this technique for building compact and cost-effective organic lasers with good beam quality. Our result will open a promising route for future high performance microcavity optoelectronic devices, especially for laser devices under current injection.

III-Nitrides Resonant Cavity Photodetector Devices.

III-nitride resonant cavity-enhanced Schottky barrier photodetectors were fabricated on 2 µm thick GaN templates by radio frequency plasma-assisted molecular beam epitaxy. The optical cavity was formed by a bottom distributed Bragg reflector based on 10 periods of Al0.3Ga0.7N/GaN, an Au-based Schottky contact as top mirror, and an active zone of 40 nm-thick GaN layer. The devices were fabricated with planar geometry. To evaluate the main benefits allowed by the optical cavity, conventional Schottky photodetectors were also processed. The results revealed a planar spectral response for the conventional photodetector, unlike the resonant devices that showed two raised peaks at 330 and 358 nm with responsivities of 0.34 and 0.39 mA/W, respectively. Both values were 80 times higher than the planar response of the conventional device. These results demonstrate the strong effect of the optical cavity to achieve the desired wavelength selectivity and to enhance the optical field thanks to the light resonance into the optical cavity. The research of such a combination of nitride-based Bragg mirror and thin active layer is the kernel of the present paper.

Preparation and improved photoelectrochemical properties of InGaN/GaN photoanode with mesoporous GaN Distributed Bragg reflectors

We fabricate the large-area and highly reflective mesoporous GaN (MP-GaN) Distributed Bragg reflectors (DBRs) via an electrochemical etching technology in HNO3 solution for the first time and then use the DBRs as the template in growth of InGaN/GaN structure by the metal organic chemical vapor deposition (MOCVD) technology. The InGaN/GaN structure with MP-GaN DBRs acts as the photoanode during photoelectrochemical (PEC) water splitting experiments in 1 M HBr solution for the first time. Compared to the sample without MP-GaN DBRs, the InGaN/GaN structure with the MP-GaN DBRs presents significantly increased photoluminescence (PL) intensity, which is attributed to light reflection effect of the bottom MP-GaN DBRs and improved internal quantum efficiency (IQE) of the multiple quantum wells (MQWs) layer. More interestingly, the InGaN/GaN structure with the MP-GaN DBRs presents markedly improved PEC properties such as a low onset voltage (−0.61 V vs. RHE), a 4.5-fold enhancement in photoconversion efficiency and good stability.

Cavity designs for nitride VCSELs with dielectric DBRs operating efficiently at different temperatures

This study set out to analyze the performance of modern nitride GaN-based tunnel-junction vertical-cavity surface-emitting lasers (VCSELs) at various ambient and elevated temperatures, with the aid of an advanced self-consistent optical-electrical-recombination-thermal model. Particular attention was given to the impact that both the length of the laser cavities and the mirror reflectivities have on laser operation across the temperature range. The optimal number of pairs in the top Distributed Bragg Reflector (DBR) was determined for stable operation at high temperatures and relatively high output powers. The effect on laser performance of expanding the metallization around the bottom DBR was also investigated.

30 GHz bandwidth temperature stable 980 nm vertical-cavity surface-emitting lasers with AlAs/GaAs bottom distributed Bragg reflectors for optical data communication

We present a 980 nm vertical-cavity surface-emitting laser (VCSEL) design which achieves 32 GHz small-signal modulation bandwidth (f3db) at 15 °C and record-high 27 GHz at 85 °C. Our devices utilize binary AlAs/GaAs bottom distributed Bragg reflector material layers to improve thermal conductance. We extract key VCSEL figures-of-merit from static optical output power-current-voltage (LIV), spectral emission, and high frequency dynamic measurements and observe highly temperature stable performance for these parameters.

GaN:Eu,O-Based Resonant-Cavity Light Emitting Diodes with Conductive AlInN/GaN Distributed Bragg Reflectors

We demonstrate a GaN:Eu,O-based resonant-cavity light emitting diode (RCLED) fabricated with a n-type conductive Al0.82In0.18N/GaN bottom-distributed Bragg reflector (DBR) and a ZrO2/SiO2 top-DBR a...