Abstract

Uniform arrays of three shapes (, , and ) of GaAs microlenses (MLs) by wet-etching are demonstrated, ∼200 nm spatial isolation of epitaxial single QDs embedded (: 890–990 nm) and broadband ( nm) enhancement of their quantum light extraction are obtained, which is also suitable for telecom-band epitaxial QDs. Combined with the bottom distributed Bragg reflector, the -shaped ML forms a cavity and achieves the best enhancement: extraction efficiency of 26%, Purcell factor of 2 and single-photon count rate of counts per second at the first lens; while the -shaped ML shows a broader band (e.g., longer ) enhancement. In the MLs, single QDs with featured exciton emissions are observed, whose time correlations prove single-photon emission with multi-photon probability ; some QDs show both biexciton and exciton X emissions and exhibit a perfect cascade feature. This work could pave a step towards a scalable array of QD single-photon sources and the application of QD photon-pair emission for entanglement experiments.

Highlights

  • 5.5 kcps with the average I f lat of 4 kcps, while the intensity of quantum dots (QDs) in the MLs varies from 20 kcps to 110 kcps at maximum

  • Its statistical distribution is a good reflection of the QD X-position variation from the ML center as the simulation in Figure 2a reflects: the maximal intensity corresponds to a QD in the ML center that has very few statistical counts, while the minimal intensity (∼20 kcps) with many statistical counts corresponds to a QD

  • Region where single QD is observed in a ML and in the multi-QD region where multi-QDs are observed, especially in a hat-shaped ML

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Summary

Introduction

Semiconductor quantum dots (QDs) is a promising candidate for realization of on-demand quantum light source with high photon extraction efficiency, strong suppression of multi-photons and high indistinguishability of the emitted photons [6]

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