Borosilicate Glass Substrates Research Articles

Influence of Substrate on Sb2Se3/CdS Heterojunction Thin Film Solar Cells and Evaluation of Their Performance by Dark J‐V Analysis

ABSTRACTA simple binary antimony selenide (Sb2Se3) absorber is evolving as an alternative photovoltaic material in thin film solar cells because of its unique properties and easy processing. Sb2Se3 thin films having good crystalline quality are grown via versatile thermal evaporation from pre‐synthesized near stoichiometric compound material on molybdenum‐coated soda lime glass (SLG) and borosilicate glass (BG) substrates. Following the systematic characterizations on the absorber films, substrate configured Sb2Se3/CdS heterojunction devices were fabricated and their photovoltaic characteristics have been studied using current density vs. voltage (J‐V), dark J‐V modeling, external quantum efficiency and capacitance vs. voltage measurements. The power conservation efficiency values of 4.88% and 5.04% were achieved for the devices fabricated on SLG and BG substrates, respectively with deficit in open circuit voltage. The obtained values are higher in comparison to the reported device efficiencies in substrate configured Sb2Se3 solar cells, in which the absorber is prepared through thermal evaporation. To understand the loss in open circuit voltage, a compact equivalent circuit model was considered and identified the contribution of different shunt leakage paths in the devices. In addition to that, the device fabricated on the SLG was stable with minimal changes in its photovoltaic performance for a period spanning over 200 days. The results obtained are encouraging with scope for improving the device performance through interface engineering and back surface passivation strategies.

Nonlinear optical parameters and electronic properties of plasma polymerized methyl acrylate thin films

Plasma polymerized methyl acrylate (PPMA) thin films were fabricated on a borosilicate glass substrate at a plasma power of 28 W to study nonlinear optical parameters and electronic properties. X-ray Diffraction analysis confirmed the amorphous nature of the PPMA films, while Attenuated total reflectance Fourier transform infrared spectroscopy indicated monomer fragmentation due to plasma polymerization. Field emission scanning electron microscope images of the films display a water wave-like structure. PPMA films demonstrated thermal stability up to approximately 574 K in both N2 and air environments. The values of direct band gap energies increase from 3.30 to 3.41 eV with increasing film thicknesses, whereas the Urbach energy values show in an opposite manner. The Wemple-DiDomenico model was employed to analyze both the oscillator energies ranging from 5.54 to 6.44 eV and the dispersion energies ranging from 10.56 to 12.89 eV. The static linear refractive index showed typical dispersion behavior, with film thickness conforming to Moss's rule. The nonlinear refractive index and 2nd and 3rd order nonlinear susceptibilities decrease with increasing the studied films. The lattice dielectric constant values exceeded the high-frequency dielectric constant, indicating the presence of lattice vibrations and free carriers. Electronic parameters are fluctuating with increasing film thickness. The observed changes in nonlinear optical parameters and electronic properties highlight the potential of PPMA films for applications in photovoltaic and optoelectronics.

Fabrication of 32×32 2 D CMUT Arrays on a Borosilicate Glass Substrate With Silicon- Through-Wafer Interconnects Using Non- Aligned and Aligned Anodic Bonding

Fabrication of 32×32 2 D CMUT Arrays on a Borosilicate Glass Substrate With Silicon- Through-Wafer Interconnects Using Non- Aligned and Aligned Anodic Bonding

Synthesis of manganese oxide thin films deposited on different substrates via atmospheric pressure-CVD

In this study, we report the synthesis of manganese oxide (MnxOy) thin films on stainless steel, silicon, and borosilicate glass substrates via atmospheric pressure chemical vapor deposition (AP-CVD) using Mn(thd)3 and O3 as precursor and reactive gas, respectively. Deposition was achieved at a low temperature of 300 °C under atmospheric pressure, offering a cost-effective and scalable alternative to traditional high-vacuum CVD methods. The films displayed excellent adhesion and reproducibility, with substrate-dependent variations in film coloration, crystal phases, and morphology. X-ray diffraction (XRD) and Raman spectroscopy confirmed the presence of Mn3O4 and Mn2O3 phases, with Mn3O4 predominating on stainless steel and silicon, while Mn2O3 was more prominent on glass. Scanning electron microscopy (SEM) revealed granular structures with uniform grain sizes, particularly on stainless steel substrates. X-ray photoelectron spectroscopy (XPS) confirmed Mn2+ and Mn3+ oxidation states, consistent with the phase distribution observed by XRD and Raman analysis. This work demonstrates the potential of AP-CVD for scalable manganese oxide thin-film synthesis, particularly for energy storage applications, where Mn3O4 and Mn2O3 can serve as precursors to δ-MnO2 in supercapacitors. The method's simplicity, combined with the high-quality films produced, makes it a promising approach for future research and industrial-scale applications.

Properties of Thin Film Composites of rGO–SnO2 and Modeling of Ultraviolet Laser‐Induced Conductivity Decay

AbstractReduced graphene oxide (rGO) and tin dioxide (SnO2) form composites in a wide range of SnO2/rGO proportions, which are deposited as thin films on borosilicate glass and silica substrates. The rGO proportion affects the SnO2 optical properties and the sample surface, as observed by optical transmittance and confocal and scanning electron microscopies images, mainly for high proportion of rGO. For low proportion, the presence of small surface islands may contribute to optical confinement. The evaluated bandgap is basically from the SnO2 matrix unless the presence of rGO affects the optical absorption edge. Monochromatic ultraviolet light from a He–Cd laser (325 nm) irradiating on the composite film increases the conductivity, giving rise to the phenomenon of persistent photoconductivity (PPC), even very close to room temperature. Modeling by considering mainly the SnO2/rGO interface barrier for electron transport, yield an interface energy barrier of 250 meV. The strong response to ultraviolet light and the phenomenon of PPC indicates potential application in amplifiers, which could be adjusted by doping with rare‐earth ions, such as Er3+ in the SnO2 matrix.

High-quality VO2 thin films sputter-deposited on borosilicate glass substrates for modulating solar transmission and thermal emission

M1-phase VO2 exhibits a reversible phase transition between the insulating and metallic states at T = ∼341 K, and VO2-based smart windows have been extensively studied. The smart window application requires the growth of high-quality VO2 films with a large resistivity change and small hysteresis width (ΔT) on glass substrates using a scalable deposition method such as sputtering. However, the polymorphic nature of VO2 makes it challenging to obtain high-quality VO2 films on ordinary window glasses (borosilicate and soda-lime glasses). Thus far, VO2 films sputtered on glass substrates have exhibited resistivity changes of 1.5–2 orders of magnitude and ΔT = 3–19 °C. In this study, we show that high-quality VO2 films with a resistivity change of 2.5−3.0 orders of magnitude and ΔT = 2 °C can be grown on borosilicate glass substrates via radio-frequency sputtering followed by thermal annealing. The simultaneous achievement of such a large resistivity change and small hysteresis width is highly encouraging not only for smart windows but also for other applications. With respect to the modulation of solar transmission and thermal emission with temperature, the performance levels of the produced VO2 films were 70−75 % of those expected from pure M1-phase VO2 films.

Transparent, Antibiofouling Window Obtained with Surface Nanostructuring.

Biofouling is one of the key factors which limits the long-term performance of seawater sensors. Common measures to hinder biofouling include toxic paints, mechanical cleaning and UV radiation. All of these measures have various limitations. A very attractive solution would be to prevent biofilm formation by changing the surface structure of the sensor. This idea has been implemented successfully in various settings, but little work has been done on structuring optically transparent materials, which are often needed in sensor applications. In order to achieve good antibiofouling properties and efficient optical transparency, the structuring must be on the nanoscale. Here, we investigate a transparent, antibiofouling surface obtained by patterning a semihexagonal nanohole structure on borosilicate glass. The nanoholes are approximately 50 nm in diameter and 200 nm deep, and the interparticle distance is 135 nm, allowing the structure to be optically transparent. The antibiofouling properties of the surface were tested by exposing the substrates to the microalgae Phaeodactylum tricornutum for four different time intervals. This species was chosen because it is common in the Norwegian coastal waters. The tests were compared with unstructured borosilicate glass substrates. The experiments show that the nanostructured surface exhibits excellent antibiofouling properties. We attribute this effect to the relative size between the structure and the biofouling microorganism. Specifically, the small dimensions of the nanoholes, compared to the biofouling microorganism, make it more difficult for the microalgae to attach. However, lubrication of the substrates with FC-70 perfluorocarbon resulted in contamination at a rate comparable to the reference substrate, possibly due to the chemical attractiveness of the alkane chains in FC-70 for the microalgae.

A triplexer chip with cascaded butterfly multimode interference couplers by femtosecond laser microprocessing

A triplexer chip utilizing three cascaded butterfly multimode interference (MMI) couplers to output three optical signals from their respective ports is proposed. The chip consists of a borosilicate glass substrate, a JA photoresist core layer, and an RZJ photoresist cladding. The beam propagation method (BPM) is used to design and optimize the chip. The femtosecond laser processing is investigated, and the chip is processed with a laser power of 1.6 mW and an ablation speed of 4 mm/s. Tests show that the chip meets the design specifications with a low insertion loss of 4.34 dB, an extinction ratio of more than 15 dB, a crosstalk of less than −15 dB, and a 3 dB bandwidth up to 76.8 nm.

Enhanced grain orientation in Sb2Se3 thin films deposited on Mo/BSG substrates via RF-sputtering and selenization

The alignment of the Sb2Se3 absorber grains along the c-axis, resulting from their quasi-1D ribbon-like growth, has been found to enhance current density, thereby enabling high power conversion efficiencies in Sb2Se3-based thin film solar cells. This study presents a controllable method for depositing Sb2Se3 thin films with highly oriented grains and a compact morphology, making them suitable for large-scale solar cell applications. A combination of magnetron sputtering and post-deposition isothermal selenization techniques was used. This process involved sputtering antimony onto Mo-coated Borosilicate glass (BSG) substrates, followed by selenizing the films at different temperatures in argon-gas filled quartz ampoules. The influence of several partial Ar-gas pressures and selenization temperatures on the grain growth was studied to achieve enhanced preferred grain orientations and compact morphology of the Sb2Se3 thin films. Selenization at 380 °C resulted in dominant vertical grain orientations with respect to the substrate surface of the Sb2Se3, as confirmed by scanning electron microscopy and X-ray diffraction analysis, without compromising surface compactness. Although occasional micro-voids remain in the films, further optimization could eliminate these imperfections. The developed sequential method, where Sb layer was deposited by RF-sputtering process, followed by an annealing at elevated temperature in the presence of Se and argon gas pressure, holds potential for large-scale production and the fabrication of other quasi-1D chalcogenide thin films.

The significance of bilayer window (CdS:O/CdS) on the performance of CdTe thin film solar cells

Ultrathin and compact CdS:O/CdS bilayer window in CdTe solar cells has higher potential for enhanced p-type doping, reduced Te diffusion, and improved power conversion efficiency (PCE) compared to traditional single-layer CdS or CdS:O windows. In this effort, we used a two-gun RF sputtering equipment to deposit compact CdS:O (∼50 nm)/CdS(∼50 nm) bilayers onto the borosilicate and ITO-coated glass substrates at low temperature (≤250 °C). Intriguingly CdS:O/CdS bilayers retain its hexagonal {0002} preferential orientation but with around 10.58 % optical bandgap (Eg) increment compared to CdS (Eg ≈ 2.32 eV) of equal thickness (∼100 nm). Close-spaced sublimation (CSS) technique was used to deposit the CdTe thin film onto the CdS and CdS:O/CdS layers at 650 °C. The effect of CdS and CdS:O/CdS layers on the microstructural and morphological features of CdCl2-treated CdTe films were critically analyzed in revealing a promising {0001}/{111}-like partial-epitaxy presumably due to the preferential cubic CdTe growth along the <111> orientation. The CdTe films grown over a CdS:O/CdS layer exhibited smaller average crystallite and grain sizes than those grown over a single CdS layer. An essential finding was the formation of an optimal intermix layer of CdSxTe1-x, particularly evident in the CdTe films grown on the CdS:O/CdS bilayer. To comprehensively explore the effect of CdS:O/CdS window layers on PCE, complete CdTe solar cells were fabricated using three different window layers: CdS, CdS:O, and CdS:O/CdS, which are all considered as rudimentary as no layer optimization was performed. Notably, CdTe solar cell that incorporates the CdS:O/CdS bilayer window exhibited the most promising performance among all the tested rudimentary cells and corroborated the numerically simulated findings conducted by the SCAPS-1D simulator.

Fabrication and characterization of MgF2 anti-reflective films comprising dual-layer prepared by physical vapor deposition technique for optoelectronic applications

Moth eye protuberances, for instance, exhibit highly developed and well-organized nanostructures that allow them to adapt to a wide range of environmental conditions and achieve remarkable antireflective performance, which has inspired and been emulated by scientific advancement. Innovative studies have focused on bioinspired and imitating moth-eye patterns to provide a textured surface in multilayer antireflective coatings (ARC) using nanomaterials, polymers, or composites to eliminate undesired reflection in standard optical components and optoelectronic industrial applications. Multilayer AR systems provide a number of advantages over single-layer designs. Still, their limited applicability is due to obstacles such as mismatched properties at interfaces, high costs, poor mechanical durability, and wetting concerns. Using MgF2 and polytetrafluoroethylene, we develop a technique for fabricating high-performance AR nanostructures on borosilicate crown glass and Fluorine-doped Tin Oxide substrates via the glancing angle deposition technique. By inducing porosity and changing the deposition angle (α) at 550 nm, the refractive index of MgF2 is reduced from 1.38 to 1.14. In agreement with optical modelling predictions, high-performance ARC has been successfully produced on different substrates. Besides this, introducing a thin layer of polytetrafluoroethylene on MgF2 ARC via vapor deposition having a refractive index of 1.21 deposited at α ∼80° results in inducing water-repellent properties in ARC. Hence, our fabricated ARC yields stable AR efficiency with outstanding directional uniformity, durability, and negative temperature stability, having hydrophobic characteristics.

Synthesis, Characterization, and Photocatalytic Properties of Sol-Gel Ce-TiO2 Films

In this study, nanostructured cerium-doped TiO2 (Ce-TiO2) films with the addition of different amounts of cerium (0.00, 0.08, 0.40, 0.80, 2.40, and 4.10 wt.%) were deposited on a borosilicate glass substrate by the flow coating sol-gel process. After flow coating, the deposited films were dried at a temperature of 100 °C for 1 h, followed by calcination at a temperature of 450 °C for 2 h. For the characterization of sol-gel TiO2 films, the following analytic techniques were used: X-ray diffraction (XRD), differential thermal analysis (DTA), thermal gravimetry (TG), differential scanning calorimetry (DSC), diffuse reflectance spectroscopy (DRS), and energy dispersive X-ray spectroscopy (EDS). Sol-gel-derived Ce-TiO2 films were used for photocatalytic degradation of ciprofloxacin (CIP). The influence of the amount of Ce in TiO2 films, the duration of the photocatalytic decomposition, and the irradiation type (UV-A and simulated solar light) on the CIP degradation were monitored. Kinetics parameters (reaction kinetics constants and the half-life) of the CIP degradation, as well as photocatalytic degradation efficiency, were determined. The best photocatalytic activity was achieved by the TiO2 film doped with 0.08 wt.% Ce, under both UV-A and solar irradiation. The immobilized catalyst was successfully reused for three cycles under solar light simulator radiation, with changes in photocatalytic efficiency below 3%.

Exploring the Post-Annealing Influence on Stannous Oxide Thin Films via Chemical Bath Deposition Technique: Unveiling Structural, Optical, and Electrical Dynamics

Stannous oxide (SnO2) thin films have garnered significant attention for their promising applications in various electronic and optoelectronic devices. In this study, we investigate the impact of post-annealing on the structural, optical, and electrical properties of stannous oxide thin films deposited using the chemical bath deposition (CBD) technique. The thin films were prepared on a Borosilicate glass substrate, followed by a controlled annealing process to enhance their performance. Structural analysis was conducted using techniques such as X-ray diffraction (XRD) to examine the cubic crystalline structure and the crystallite size increase induced by post-annealing. The results revealed alterations in grain size from the SEM and the purity of samples confirmed from EDX results. The optical properties of the Stannous oxide thin films were examined using UV-Vis spectroscopy. The optical absorption and bandgap characteristics were analyzed to understand how post-annealing influences the optical behavior of the thin films. Where the optical absorption was 320nm and the bandgap ranges were 3.86eV to 3.83eV. Furthermore, the electrical properties of the thin films were evaluated semiconducting nature, and conductivity increased with rising post-annealing. The findings from this study contribute to the understanding of the role of post-annealing in tailoring the properties of Stannous oxide thin films. The optimization of structural, optical, and electrical characteristics is crucial for their successful integration into electronic and optoelectronic devices.

Er2O3 doped zinc borosilicate glass substrate: Impact of doping to the structural, optical and surface plasmon resonance performance

Er2O3 doped zinc borosilicate glass substrate: Impact of doping to the structural, optical and surface plasmon resonance performance

Property enhancement of a close-spaced sublimated CdTe thin film by a post-growth activation step with CdCl2 and MgCl2

The activation of CdTe thin films using MgCl2 after growth demonstrates superior texture, optical characteristics, and structural properties compared to the hazardous CdCl2, particularly in the context of large-scale production.

Performance calculation for a MEMS switch with «floating» electrode

Switches fabricated using MEMS technology are considered as a promising element base of radio electronics. The main characteristic of a MEMS switch is the ratio of capacitances in the closed and open states. For conventional devices, this ratio is of several units, but it can be significantly increased by implementing original design solutions. The work is devoted to the switch, which is a combination of capacitive and resistive devices. Its working characteristics are considered depending on the substrate properties and contact resistance. The switch provides a capacitance ratio of 27.7 and 46.1 at sapphire and borosilicate glass substrates, while high-resistivity silicon does not allow the value above 7.4. Isolation and insertion loss are of 14.7-19.4 and 0.8-1.1 dB in the frequency range of 4-10 GHz on a sapphire wafer. Acceptable S-parameters are achieved when the contact resistance is not higher than 1 Ohm

Heterogenous CO2 Reduction Photocatalysis of Transparent Coordination Polymer Glass Membranes Containing Metalloporphyrins.

Transparent and grain boundary-free substrates are essential to immobilize molecular photocatalysts for efficient photoirradiation reactions without unexpected light scattering and absorption by the substrates. Herein, membranes of coordination polymer glass immobilizing metalloporphyrins were examined as a heterogeneous photocatalyst for carbon dioxide (CO2) reduction under visible-light irradiation. [Zn(HPO4)(H2PO4)2](ImH2)2 (Im = imidazolate) liquid containing iron(III) 5,10,15,20-tetraphenyl-21H,23H-porphine chloride (Fe(TPP)Cl, 0.1-0.5 w/w%) was cast on a borosilicate glass substrate, followed by cooling to room temperature, resulting in transparent and grain boundary-free membranes with the thicknesses of 3, 5, and 9 μm. The photocatalytic activity of the membranes was in proportion to the membrane thickness, indicating that Fe(TPP)Cl in the subsurface of membranes effectively absorbed light and contributed to the reactions. The membrane photocatalysts were intact during the photocatalytic reaction and showed no recrystallization or leaching of Fe(TPP)Cl.

Annealing Enhanced Phase Transition in VO2 Thin Films Deposited on Glass Substrates via Chemical Vapor Deposition

In this work, VO2 is deposited on borosilicate glass substrates via a single step Chemical Vapor Deposition (CVD). Though the structural characterization revealed the presence of phase pure polycrystalline VO2 in simple monoclinic crystal structure (P21/c), electrical measurements did not show a sharp transition. To understand the ambiguity, surface characterization was performed with X-ray Photoelectron Spectroscopy (XPS) on the as-deposited VO2 thin films. Vanadium was present in V3+, V4+ and V5+ states. Following these measurements, annealing was performed in ambience at 200 °C for 10 minutes. Subsequent electrical measurements showed an improved phase transition, enhanced by an order of magnitude. We attribute the enhancement in transition to annealing of oxygen vacancies present in VO2 thin films because of the deposition conditions. Decrease in oxygen vacancies was correlated with a decrease in the fraction of V3+ from XPS measurements. The sample annealed at 200°C for 10 minutes exhibited a higher resistance ratio (ΔA = 305) with an optimum hysteresis (4°C) and transition width(12°C), whereas the as-deposited sample exhibited a resistance ratio of ΔA = 32. The thermal treatment affected the characteristics of the transition. A narrow hysteresis of 4°C and a sharp transition width with a reasonable resistance ratio were obtained for the sample annealed at 200°C for 10 minutes. From this study, we understand that our synthesis of VO2 thin films via CVD is prone to be off-stoichiometric and therefore, contains defects such as oxygen vacancies. We could mitigate the effect of these vacancies and engineer the stoichiometry by performing a simple annealing which in turn improved the strength of the phase transition. Drawbacks such as a poor-quality transition, resulting from synthesis parameters can be mitigated if we understand the effect of vanadium and oxygen vacancies.

Optical, structural and mechanical properties of TiO2 and TiO2-ZrO2 thin films deposited on glass using magnetron sputtering

In this study, the structural, optical, and mechanical properties of magnetron sputtered TiO2 and TiO2-ZrO2 mixture transparent thin films along with the effect of heat treatment were investigated. TiO2 and TiO2-ZrO2 thin films were fabricated by magnetron sputtering from ceramic targets at room temperature on both the soda-lime and the borosilicate glass substrates. Structural properties of thin films were studied via X-ray photoelectron spectroscopy (XPS), grazing incidence X-ray diffractometry (GI-XRD) and scanning electron microscopy (SEM). Optical characterizations were carried out using spectrophotometry and spectroscopic ellipsometry. The hardness and scratch behavior of the samples were investigated using nano-indentation and nano-scratch tests. TiO2 and ZrO2 presence in films was confirmed by XRD and XPS analysis. It was found that TiO2-ZrO2 films show higher hardness values compared to TiO2 thin films. It was also seen that ZrO2 presence in TiO2-ZrO2 thin films prevents the crystallization of TiO2 after annealing compared to TiO2 thin films that resulted in better surface quality and higher thermal stability after annealing. The addition of ZrO2 to TiO2 resulted also in the shifting of the absorption edge to smaller wavelengths while decreasing the sharpness thus providing less absorption in the visible area, especially in the range of 380–500 nm. The refractive index of TiO2-ZrO2 thin film remained relatively unchanged compared to TiO2 after annealing, making it more preferable in terms of optical stability.

The influence of droplet-based seeding of nanodiamond particles on the morphological, optical, and mechanical properties of diamond coatings on glass

This work investigates four different methods for the seeding of nanodiamond (ND) particles towards applying nanocrystalline diamond coatings on glass. The standard spin coating and dip coating are investigated together with two droplet-based techniques, ink-jet printing and ultrasonic spray coating (USSC). The application of these last two techniques for diamond coatings on glass is novel and is specifically designed for patterning and large area deposition, respectively. Comparing the seeding processes, their impact on the chemical vapor deposited nanocrystalline diamond (NCD) layers is unclear. Here, particularly the impact on the morphological, optical, and mechanical properties, are studied. In this work, borosilicate glass substrates were seeded, after which diamond layers were grown in a linear antenna microwave plasma-enhanced chemical vapor deposition reactor to thicknesses of 45, 100, and 500 nm. The coatings showed a roughness that is 2 to 3 times higher for the droplet-based seeding techniques compared to spin coating. It was found that the optical absorption coefficient for 100 nm thick samples prepared using USSC was 2400 cm−1 at the wavelength of 550 nm, compared to 1500 cm- 1 using spin and dip seeding techniques. The stress in the film was compressive as determined by curvature measurements. Sand-trickling tests on samples coated with 100 nm thick diamond films showed similar resistance against damaging for all seeding techniques without delamination. Therefore, the different techniques achieve mechanically competitive performance. On top USSC and ink-jet printing have the opportunity to fully cover substrates on large-scale flat and even 3D surfaces, or pattern fine structures, which is not possible for standard spin and dip coating. It can be concluded that diamond coatings on large glass plates for scratch resistance, and sensing due their somewhat higher roughness, are within reach using these innovative droplet-based seeding technologies.