The potential of gallium nitride thin films in semiconductor technology and devices has garnered interest. This study aims to develop an effective GaN electrodeposition technique that will function on both Earth and microgravity situations and may be applied to any kind of needed application, such as in photovoltaic devices. To determine the optimal electrodeposition conditions, e.g. applied potential, cyclic voltammetry (CV) was done on a boron-doped diamond electrode at 0.01 mV/s potential scan rate and at 0.8 V vs. Ag/AgCl (Saturated KCl) constant applied potential. In the CV study, a well-defined peak formed at -1.75 V vs. Ag/AgCl (Saturated KCl). To start examining all the features of the electrodeposition of a thin film on Indium Tin Oxide (ITO) and Fluorine Tin Oxide (FTO) Electrodes, chronoamperometry (CA) measurements were done at different time scales, ranging from 3600s to 14400s and at a constant applied potential of -1.7 V vs. Ag/AgCl (Saturated KCl). The characterization methods used to examine the materials' topography, elemental contrast, crystal structure, and electrodeposition weight percentages included scanning electron microscopy (SEM), X-ray diffraction (XRD), and energy dispersive spectroscopy (EDS). Longer electrodeposition times produced the best grain formation, promoting dendritic structure at the electrode surface. Furthermore, the optimal weight electrodeposition percentage of Ga and N was 10% and 35 % at 3600s, respectively, although the electrodeposited electrode surface was heterogeneous. The surface topographies at 3600s showed less grains definition and dendritic structures. At higher electrodeposition times, e.g. 14400s, more grain definitions and dendritic structures were found. For the 3600s electrodeposition time, XRD peaks were found at 33o, 37o and 46o, which are characteristics of GaN wurtzite structure according to literature.