Blue LED Chip Research Articles

Dynamic Optical Power Measurements and Modeling of Light-Emitting Diodes Based on a Photodetector System and Photo-Electro-Thermal Theory

Optical measurements based on integrating sphere are primary suitable for steady-state measurements and unsuitable for dynamic real-time measurements. This paper presents an alternative method using the combination of a photodetector system and the dynamic photo-electro-thermal theory for real-time optical measurements. It is demonstrated that the voltage output of a photodetector can be correlated to the optical power in real time. Such method has been successfully applied to analyze a phosphor-converted white light-emitting diode (PC white LED) using an extended dynamic model with separate calculations of optical power from the blue LED chips and phosphor layer. Both calculated and practical results are included to confirm the validity of the new method.

Determining Phosphor Temperature in Light-Emitting Diode Based on Divisional Normalized Emission Power

We propose a non-contact method for determining phosphor/silicone temperature (phosphor temperature) in phosphor-coated light-emitting diode (pc-LED). The pc-LED with a surface mounted device (SMD) structure is primarily consisted of InGaN/GaN blue LED chip, (Sr,Ca)AlSiN3:Eu2+ red rare-earth phosphor, and transparent dimethyl silicone. This proposed method is basically based on a linear temperature dependence of divisional normalized emission power for phosphor/silicone mixture. Four types of pc-LED corresponding to four different phosphor concentrations are examined by proposed method. A comparison of measured results between micro-thermocouple device and proposed method has also been carried out, showing a fairly good agreement between them, except for pc-LED with 4.8 wt% phosphor concentration. We suggest that this proposed method can provide a useful tool for further study of optical and thermal characteristics in pc-LED.

Realizing white LEDs with high luminous efficiency and high color rendering index by using double green phosphors

The luminous efficiency of radiation (LER) and color rendering index (CRIs) are two key technological parameters of white light-emitting diodes (WLEDs), But there is always a trade-off between them, especially between LER and R9 (the 9th CRI of red color). Therefore, it is necessary to solve this problem by selecting suitable phosphors, mixing and coating it on the LED chip. In this work, two green phosphors and one red phosphor with less resorption of the two phosphors were selected by measuring the excitation spectra of seven red phosphors and emission spectra of two green phosphors. Then, different mass ratios of the phosphors were mixed with the AB glue and coated on the blue LED chips. After optimizing the ratio by measuring the luminescence spectra of the LED chips coated with different mass ratios of phosphors, high-quality white LEDs with LER = 142.74 lm/w, Ra = 97, R9 = 98.53, and the correlated color temperature of 3666 K were obtained. These LEDs have both high LER and high CRIs, further reducing the trade-off between luminous efficiency and color rendering index, which makes it can widely used for high quality solid state lighting.

Ru‐Shi Liu

"The secret of being a successful scientist is to contribute results that benefit humanity. My biggest inspiration is to develop an idea which can come true …" Find out more about Ru-Shi Liu in his Author Profile.

Synthesis and Photoluminescence Properties of Novel BaSi4O6N2:Eu2+ Phosphor for White- LEDs

Presently commercial white-LEDs employ a blue LED chip and a yellow light-emitting phosphor, and are very poor in the color rendering index (CRI) [1]. Therefore, novel blue, green and red phosphors showing broad emission spectra have studied recently. BaSi4O6N2 has been recently reported to have a structure similar to Ba3Si6O12N2 green phosphor which shows not sharp but not broad emission [2-3]. To the best of our knowledge, there is no report that succeeded in synthesizing pure BaSi4O6N2 crystal phase, and no report that the materials related to BaSi4O6N2 shows fluorescence in visible region. In this study, we investigated optimum sintering conditions and composition to obtain pure BaSi4O6N2 crystal phase by solid state reaction technique. We also examined the optical property of Eu2+ activated BaSi4O6N2 as well as the crystal structure through X-ray Rietveld refinement. Although we optimized sintering temperature and duration (1100 °C and 2 h) to obtain exclusively BaSi4O6N2 crystal phase, impurity phases such as Ba3Si6O12N2 still remained. Therefore, we tried to suppress the formation of Ba3Si6O12N2 phase by adding Si3N4 raw material in excess of stoichiometric ratio of BaSi4O6N2 (Si/Ba = 4-6). As shown in Fig. 1, by increasing the Si/Ba ratio to be more than 4, the peaks which derived from Ba3Si6O12N2 and oxides (SiO2, Ba2Si4O10) decreased in intensity. No other impurity phases were observed in the XRD pattern of the sample with Si/Ba = 6. However, SEM-EDS analysis supported that the monophasic sample possessed the stoichiometric composition as BaSi4O6N2.The lattice parameters of BaSi4O6N2 which crystallized in a hexagonal unit cell were a = 5.2573 (16) and c = 7.7295 (59)Å in the sample with Si/Ba = 6. Compared to the reported lattice parameters a = 5.351 and, c = 7.523Å of BaSi4O6N2 (JCPDS 82-4088), the a length was longer and the c length was shorter. As shown in Fig. 2, X-Ray Rietveld analysis of our BaSi4O6N2 demonstrated that the difference in the lattice parameters would come from the different occupation probability of two distinct Ba sites in the structure [4]. One is called the Ba1 site whose coordination number by anion is 12 and the other is 6-fold Ba2 site. The previous paper reported that Ba species were distributed to these sites with occupation probabilities of Ba1:Ba2 = 87:13 [3]. However, our oxynitride possessed neither Ba nor Eu at the Ba1 site. As shown in Fig. 3, broad spectra with the emission peak of around 405 nm were observed under the excited light of 320 nm. This emission is ascribed to the 4f65d1→4f7 transition of Eu2+. In addition, the emission spectrum of BaSi4O6N2:Eu2+ possesses FWHM about 185 nm. It was obviously broader band compared with that of Ba3Si6O12N2:Eu2+ emission with FWHM about 70 nm. It indicates that this phosphor is fascinating for high CRI white-LEDs.

Green route, room-temperature synthesis and luminescence properties of a non-rare-earth doping Zn2+ based narrow-band red phosphor for WLEDs

As a promising red component used in white light-emitting diodes (WLEDs), Mn4+ activated fluoride red phosphor has drawn tremendous attention due to its excellent luminescence properties. However, in order to synthesize these phosphors, the hypertoxic HF which will cause safety problems has to be used. In this work, a class of KZnF3:Mn4+ phosphors were synthesized by using low toxicity (HCl + NH4F) to substitute for HF at room temperature. The structure, morphology and element composition have been analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy-dispersive X-ray spectrometers (EDS) in detail, respectively. The optical properties of KZnF3:Mn4+ were evaluated and we found that under blue light excitation, KZnF3:Mn4+ as expected exhibits a sharp narrow-band red emission near 636 nm. In addition, the synthesis parameters, including the molar ratios of (HCl + NH4F) to Zn(NO3)2·6H2O and reaction time on the luminescent properties of KZnF3:Mn4+ samples have been systematically discussed. Furthermore, the concentration quenching mechanism was also analyzed. Finally, it is assembled by YAG:Ce3+, KZnF3:Mn4+ and blue LED chip to achieve a WLED with a lower CCT (4974 K), higher CRI (Ra = 82.1) and a luminous efficiency of 120.33 lm/W. All of these results manifest that the KZnF3:Mn4+ phosphors prepared by green route would be a satisfactory material to ameliorate the performance of WLEDs.

Weak thermal quenching of the luminescence in Y2.94-xLuxAl4GaO12: 0.06Ce3+ green phosphor for white light-emitting diodes

A series of Y2.94-xLuxAl4GaO12: 0.06Ce3+ phosphors were prepared by the conventional solid-state reaction method. It was confirmed that the phosphors exhibit cubic garnet crystal structures by XRD and Rietveld refinements. The phosphors show an intense broad emission band from 475 nm to 650 nm, which attributed to the 5d→4f transitions of the Ce3+ ions under the excitation of 450 nm. Simultaneously, obvious blue shift is observed from 518 nm to 497 nm with increasing Lu3+ concentrations from 0 to 2.94. With the increase of Lu3+ concentrations the emission intensity increases and reaches to the maximum for x = 2.5. By optimizing Lu3+ concentration, the quantum efficiency up to 89.8% is obtained. The emission intensity at 453 K is up to 92% of that at room-temperature indicating a weak thermal quenching and a superior thermal stability. These results indicate that the phosphor can be used in blue LED-Chip based white LEDs in the future.

Luminescence of Tb3Al5O12 phosphors co-doped with Ce3+/Gd3+ for white light-emitting diodes.

Tb2.96−xCe0.04GdxAl5O12 phosphors were synthesized through solid-state reactions. The influence of Gd3+ on the luminescence was investigated. Under the excitation at 460 nm, Tb2.96Ce0.04Al5O12 shows the characteristic emission band of Ce3+ with a peak wavelength at about 554 nm. After co-doping Gd3+ into Tb2.96Ce0.04Al5O12, the peak wavelength of the Ce3+ emission band shifts to longer wavelengths, which is induced by the increasing crystal field splitting. However, the Ce3+ emission intensity also decreases because the substitution of Tb3+ with Gd3+ causes lattice deformation and generates numerous structural and chemical defects. By comparing the light parameters of white light-emitting diodes (WLEDs) containing Y2.96Ce0.04Al5O12, Tb2.96Ce0.04Al5O12 and Tb2.81Ce0.04Gd0.15Al5O12 phosphors, we can find that the WLED containing the Tb2.81Ce0.04Gd0.15Al5O12 phosphor generates warmer light than the WLEDs containing Y2.96Ce0.04Al5O12 and Tb2.96Ce0.04Al5O12 phosphors. Moreover, the WLEDs fabricated by integrating a blue LED chip and Ce3+/Gd3+-co-doped Tb3Al5O12 phosphors show outstanding colour stability when driven under different currents.

Two-Step-Enhanced Stability of Quantum Dots via Silica and Siloxane Encapsulation for the Long-Term Operation of Light-Emitting Diodes.

Despite innovative optical properties of quantum dots (QDs) for QDs-converted light-emitting diodes (QD-LEDs), the vulnerability of the QDs, against heat and moisture, has been a critical issue for commercialization and long-term use. To overcome the instabilities, we fabricated a thermally and photostable QDs-embedded silica/siloxane (S-QD/siloxane) film by embedding QDs in silica and siloxane encapsulation through a two-step sol-gel reaction. S-QDs were stably dispersed in the oligo-siloxane resin with even a QD concentration of 5 wt % without aggregation. The two-step physical barriers of silica and siloxane acted to decrease the toxicity of QDs and improve the stability against heat and moisture [85 °C/5% relative humidity (RH), 85 °C/85% RH, and 120 °C/5% RH], light (50 and 100 mA), and chemicals (ethanol, HCl, and NaOH). Our S-QD/siloxane film was applied as a color-conversion material on a blue LED chip without additional solidification and encapsulation processes for red and white QD-LEDs, exhibiting a wider color gamut (107% in CIE 1931) compared to NTSC. These enhancements indicate that our S-QD/siloxane film is a suitable material for long-term operation of QD-enhanced films and QD-LEDs in next-generation displays.

The effects of Mg2+/Si4+ substitution on crystal structure, local coordination and photoluminescence of (Gd,Lu)3Al5O12:Ce garnet phosphor

A series of phase-pure [(Gd0.6Lu0.4)1-yCey]3[Al1-z(Mg/Si)z]5O12 (y = 0–0.012, z = 0–0.15) garnet phosphors were synthesized via gel-combustion, and the effects of Mg2+/Si4+ substitution on characteristics of the garnet host and Ce3+ luminescence were investigated in detail. The maximum amount of equimolar Mg2+/Si4+ dopants that can be incorporated into the garnet lattice and the optimal Ce3+ content for luminescence were determined to be around z = 0.15 and y = 0.010, respectively. Mg2+/Si4+ codoping was analyzed to narrow bandgap of the host, non-uniformly compress the [CeO8] dodecahedron, enlarge the [Al-O] polyhedrons and meanwhile alter bond angles. Increasing Mg2+/Si4+ content was found to lower the intensity, fluorescence lifetime and thermal stability of Ce3+ luminescence and meanwhile red-shift the 4f-5d1 excitation/emission peaks. The results were interpreted by considering band structure and crystal field splitting of the Ce3+ 5d energy level. The y = 0.01 and z = 0.15 phosphor exhibited a broad emission peaked at ∼561 nm under 457 nm excitation, with CIE color coordinates of around (0.449,0.527), a correlated color temperature of ∼3567 K, a fluorescence lifetime of ∼43 ns, and an activation energy for thermal quenching of ∼0.267 eV. Electroluminescence indicated that the phosphors may find potential application in warm-white LEDs excited by blue-LED chips.

Synthesis and photoluminescence of Mn4+ in M4Al14O25 (M = Sr or Mg) compounds as red-light phosphors for white LED

Red-light-emitting phosphors Mn4+-doped M4Al14O25 (M = Sr or Mg) were synthesized by solid-state reaction at 1400 °C in air, and their luminescent properties were initially investigated for their applications in warm white-light-diodes (W-LEDs). The excitation spectra of Mn4+-doped M4Al14O25 (M = Sr or Mg) showed that those phosphors were efficiently excited by near ultraviolet (UV) or blue LED chips, and those phosphors exhibited deep red emission band around 650 nm arising from the spin-forbidden 2E → 4A2 transition of Mn4+. The energy transfer mechanism in Mn4+-doped Mg4Al14O25 phosphor was found to be the electric dipole-dipole interaction and the critical distance of energy transfer between the Mn4+ ions was obtained to be about 1.384 nm. The Commission International de L’Eclairage (CIE) chromaticity coordinates of 0.5at.% Mn4+-doped Mg4Al14O25 were (0.631, 0.252). The temperature-dependent luminescence indicated Mn4+-doped M4Al14O25 phosphor was poor thermal-stable. Further work related to improve its thermal stability need be executed for Mn4+-doped M4Al14O25 (M = Sr or Mg) as a promising candidate of red-component for warm W-LEDs.

Broadband emission of single-phase Ca3Sc2Si3O12:Cr3+/Ln3+ (Ln = Nd, Yb, Ce) phosphors for novel solid-state light sources with visible to near-infrared light output

Abstract Novel single-component phosphors Ca3Sc2Si3O12:Cr3+/Ln3+ (CSS:Cr3+/Ln3+, Ln = Nd, Yb, Ce) with broadband near-infrared (NIR) emissions are synthesized. Their phase structure, photoluminescence properties and energy transfer between Cr3+ and Ln3+ ions are investigated. In the CSS host, Cr3+ ions occupy Sc3+ sites with low-field octahedral coordination, and thus show a broadband emission in 700–900 nm under the blue light excitation. Nd3+, Yb3+ and Ce3+ ions substitute Ca2+ sites in CSS, where Nd3+ and Yb3+ ions emit the NIR light in 900–1100 nm and their excitation efficiencies at ∼450 nm are greatly enhanced by utilizing the energy transfer from Cr3+ to Nd3+/Yb3+ ions. Ce3+ ions can further enhance the absorption of CSS:Cr3+/Ln3+ phosphors to the blue light, and at the same time contribute to the visible emission in 480–650 nm. Furthermore, CSS:Cr3+/Ln3+ phosphors show good thermal stability, and approximately 79% of the initial emission intensity is sustained at 150 °C. A phosphor-converted LED (pc-LED) prototype is fabricated by integrating the as-prepared phosphor CSS:Cr3+/Ln3+ and the commercial phosphor CaAlSiN3:Eu2+ with the blue LED chip, showing a super broadband emission ranging from 450 to 1100 nm. This finding shows the potential application of CSS:Cr3+/Ln3+ phosphors in broadband NIR pc-LEDs or super broadband LED sources with visible to NIR light output.

Double-perovskite Ca2AlNbO6: Mn4+ red phosphor for white light emitting diodes: synthesis, structure and luminescence properties

The red-emitting phosphors Ca2AlNbO6: xmol%Mn4+ (CAN: xmol%Mn4+) (0.1 ≤ x ≤ 0.9) were successfully synthesized via a conventional high temperature solid-state method at air atmosphere. A band was located at 320 nm in diffuse reflection spectra (DRS) because of the spin-allowed 4A2g → 4T1g transition of Mn4+. Moreover, there were two broad bands located at photoluminescence excitation (PLE) spectra due to the spin-allowed transitions of Mn4+ upon the excitation of 712 nm. And the phosphors exhibited the far-red emission bands centered at ~ 712 nm on account of the spin-forbidden 2Eg → 4A2g transition of Mn4+ under the excitation of 355 nm. And the optimum one was CAN: 0.3 mol%Mn4+ which yields the brightest red light due to the concentration quenching effect. Furthermore, it could be confirmed that the existence of nonradiative among Mn4+ ions because the lifetime of the phosphors was decreased as the concentration of Mn4+ in CAN increased from 0.1% to 0.9 mol%. The average lifetime of the phosphors was in the range of miscroscend. In addition, the CIE chromaticity coordinates of CAN: 0.3 mol%Mn4+ were (0.7319, y = 0.2618). Finally, a blue LED chip combined with YAG: Ce3+ yellow and CAN: 0.3 mol% Mn4+ red phosphors to fabricate a warm white light emitting-diode (WLED). And the CIE chromaticity coordinates, color rendering index (CRI) and the corrected color temperature (CCT) of the device were (0.3799, 0.3432), 74.2 and 3727 K, respectively.

Reduced Working Temperature of Quantum Dots-Light-Emitting Diodes Optimized by Quantum Dots at Silica-on-Chip Structure

White light-emitting diodes (WLEDs) composed of blue LED chip, yellow phosphor, and red quantum dots (QDs) are considered as a potential alternative for next-generation artificial light source with their high luminous efficiency (LE) and color-rendering index (CRI) while QDs' poor temperature stability and the incompatibility of QDs/silicone severely hinder the wide utilization of QDs-WLEDs. To relieve this, here we proposed a separated QDs@silica nanoparticles (QSNs)/phosphor structure, which composed of a QSNs-on-chip layer with a yellow phosphor layer above. A silica shell was coated onto the QDs surface to solve the compatibility problem between QDs and silicone. With CRI > 92 and R9 > 90, the newly proposed QSNs-based WLEDs present 16.7% higher LE and lower QDs working temperature over conventional mixed type WLEDs. The reduction of QDs' temperature can reach 11.5 °C, 21.3 °C, and 30.3 °C at driving current of 80 mA, 200 mA, and 300 mA, respectively.

Structure and Luminescence Properties of Mn4+-Activated K3TaO2F4 Red Phosphor for White LEDs.

A novel red oxyfluoride phosphor K3TaO2F4:Mn4+ has been prepared by a simple two-step synthesis method. The structure, composition, and luminescence properties of K3TaO2F4:Mn4+ phosphors were investigated and discussed in detail. The real structure of K3TaO2F4 was carefully studied through X-ray powder diffraction data Rietveld refinement. K3TaO2F4 holds a D4 h group symmetry [TaO2F4]3- octahedron with the oxygen occupying the para-position. Under ultraviolet (UV) and blue light excitation, K3TaO2F4:Mn4+ phosphor emits a narrow band red emission peaking at 630 nm. High-performance warm white-light-emitting diodes (WLEDs) were fabricated using a blue LED chip, YAG:Ce3+ yellow phosphor, and K3TaO2F4:Mn4+ red phosphor. This device exhibits high color quality (CCT = 3488 K, Ra = 93.0, R9 = 90.0), which indicates that Mn4+-doped K3TaO2F4 would be a promising red phosphor for WLED applications.

Epitaxial Growth of CsPbX3 (X = Cl, Br, I) Perovskite Quantum Dots via Surface Chemical Conversion of Cs2 GeF6 Double Perovskites: A Novel Strategy for the Formation of Leadless Hybrid Perovskite Phosphors with Enhanced Stability.

Lead halide perovskites (LHPs) have received increased attention owing to their intriguing optoelectronic and photonic properties. However, the toxicity of lead and the lack of long-term stability are potential obstacles for the application of LHPs. Herein, the epitaxial synthesis of CsPbX3 (X = Cl, Br, I) perovskite quantum dots (QDs) by surface chemical conversion of Cs2 GeF6 double perovskites with PbX2 (X = Cl, Br, I) is reported. The experimental results show that the surface of the Cs2 GeF6 double perovskites is partially converted into CsPbX3 perovskite QDs and forms a CsPbX3 /Cs2 GeF6 hybrid structure. The theoretical calculations reveal that the CsPbBr3 conversion proceeds at the Cs2 GeF6 edge through sequential growth of multiple PbBr6 4- layers. Through the conversion strategy, luminescent and color-tunable CsPbX3 QDs can be obtained, and these products present high stability against decomposition due to anchoring effects. Moreover, by partially converting red emissive Cs2 GeF6 :Mn4+ to green emissive CsPbBr3 , the CsPbBr3 /Cs2 GeF6 :Mn4+ hybrid can be employed as a low-lead hybrid perovskite phosphor on blue LED chips to produce white light. The leadless CsPbX3 /Cs2 GeF6 hybrid structure with stable photoluminescence opens new paths for the rational design of efficient emission phosphors and may stimulate the design of other functional CsPbX3 /Cs-containing hybrid structures.

Convenient and large-scale synthesis of high-quality, all-inorganic lead halide perovskite nanocrystals for white light-emitting diodes

We report a convenient and large-scale process for the preparation of CsPbX3 (X = Cl, Br, I) nanocrystals (NCs) using stable and inexpensive olive oil to replace oleic acid as a surface treatment reagent. The obtained NCs show bright photoluminescence with absolute photoluminescent quantum yields of up to 93% and a tunable emission wavelength ranging from 409 to 689 nm. More importantly, the controllable morphology (nanocubes, nanorods, and nanospheres) of CsPbI3 NCs can be tuned by varying the reaction temperature, which may be ascribed to multiple organic ligands in olive oil that influence the growth/nucleation of the NCs. A white light-emitting diode (WLED) device was demonstrated by combining the green-emitting CsPbBr3 NCs and red-emitting K2SiF6:Mn4+ phosphors with a blue LED chip. Under operation with a 3 V forward bias voltage, the optimized WLED exhibits a high color rendering index of 85, a luminous efficiency of 46 lm/W, and a color gamut of 118% NTSC through a color filter.

The mechanism of N-vacancy defects self-activated light emitting based on CaMg2N2

For resolving the problems existing in the self-activated nitride based phosphors, a self-activated orange light emitting semiconductor of CaMg2N2 has been successfully synthesized and investigated in details. The crystal structure of CaMg2N2 is formed by the face-shared MgN4 tetrahedron and CaN6 octahedron, implying its rigid host lattice. With the doped of R (R= La3+, Sm3+,Pr3+,Ce3+, Eu3+) ions, emission lights and XRD diffraction peaks all show a few shift except the excitation bands. The broad excitation bands all locate at 420 nm, which matches well with blue LED chips. The similar excitation bands have also been found in self-activated light emitting semiconductors of Li3AlN2 and Mg3N2, indicating the same defect (N related defects) existing in three matrixes leads to light emitting. Through investigating the crystal and electronic structures of three matrixes, N3- vacancies that can capture the electrons are deduced to act as luminescent center, which well explains the mechanism of self-activated light emitting nitride based phosphors. This conclusion has a guiding significance for improving the existing materials and researching the new LED materials.

A red-emitting Sr3La(1-x)Eu x (AlO)3(BO3)4 phosphor with high thermal stability and color purity for near-UV-excited wLEDs.

A high efficiency red-emitting Eu3+ doped Sr3La(AlO)3(BO3)4 phosphor has been calcined successfully through a traditional solid-state method, and the photoluminescence and cathode-luminescence properties of samples are investigated in detail. The result of density functional theory (DFT) calculation shows that the Sr3La(AlO)3(BO3)4 host lattice has an indirect band gap. The broad excitation ranges from 200 nm to 500 nm, especially the strongest excitation located in the near ultraviolet (near-UV) region, suggests that the phosphor can match well with not only blue LED chips but also near-UV LED chips. Besides, the phosphor can emit bright red light peaking at 596, 618, 655 and 706 nm under either near-UV or blue light excitation and the internal quantum efficiency can reach 40%. The temperature-dependent PL properties and calculation of color purity show that the phosphor has an excellent thermal stability and outstanding color stability. Ultimately, by employing Sr3La(AlO)3(BO3)4:Eu3+ phosphor as a red light component, a stable warm white light emission is obtained with Ra = 80, CIE = (0.3443, 0.2903) and CCT = 4680 K. These results indicate that red Sr3La(AlO)3(BO3)4:Eu3+ phosphor may have a great potential for wLEDs with fantastic properties.

Photoluminescence and cathodoluminescence properties of novel rare-earth free narrow-band bright green-emitting ZnB2O4:Mn2+ phosphor for LEDs and FEDs

A novel rare-earth free narrow-band green-emitting Mn2+ doped ZnB2O4 phosphor has been synthesized successfully through solid-state method, and the photoluminescence and cathodoluminescence properties of samples were investigated in detail. The phosphor can emit bright green light peaking at 541 nm with FWHM about 41 nm under both UV and blue light excitation. The broad excitation ranges from 235 nm to 535 nm, especially the strongest excitation locates in blue region, which indicates that the phosphor can match well with not only UV LED chips but also blue LED chips. The temperature-dependent PL properties show that the phosphor has good thermal stability and outstanding color stability. From the CL spectra, it is obvious that the phosphor also exhibits intense green emission with high color purity and good color stability under low-voltage excitation, and the results indicate that the phosphor owns high saturation voltage and saturation current. In view of the outstanding performance in the PL and CL, the ZnB2O4:Mn2+ can be considered to apply in both LED and FED devices.