Bipolar Transistor Oscillator Research Articles

A direct optically injection‐locked 2.6‐GHz HBT oscillator

AbstractMeasurements on direct optical injection locking of GaAs/Al0.2Ga0.8As heterojunction bipolar transistor oscillators at 2.65 GHz are reported. An oscillator locking range of nearly 6 MHz has been achieved. Optical tuning by dc light is also observed with a tuning range up to 5 MHz. © 1993 John Wiley & Sons, Inc.

An Empirical Design Technique for Microwave Oscillators (Short Papers)

A large-signal design technique for series-type microwave oscillators using three-terminal active devices is described. Using this technique, the characteristics of the embedding circuits required for maximum output power are measured directly under actual oscillation conditions. A two-signal technique is used in the measurement to establish the required oscillation conditions and to prevent oscillation at unwanted frequencies. The design technique has been verified by the construction of a 2.7-GHz bipolar transistor oscillator.

A Unified Approach to the Design of Wide-Band Microwave Solid-State Oscillators

Present design techniques for broad-band tunable MESFET and bipolar transistor oscillators are indirect and tedious. We present new technique based on negative resistance concepts and a new theorem herein stated and proven. This technique is developed through two design examples a 5.9-12.4-GHz MESFET oscillator and a 2-8.4-GHz bipolar transistor oscillator.

Equivalent feedback representations of twin-T oscillators

The conventional twin-T oscillator using a high-gain feedback amplifier configuration is equivalent to an oscillator using a unity-gain configuration. The apparent differences are caused by the choice of the reference node and the feedback analysis method. A bipolar transistor oscillator is used to illustrate first-order and second-order effects of the (approximate) feedback analysis.