Abstract
Present design techniques for broad-band tunable MESFET and bipolar transistor oscillators are indirect and tedious. We present new technique based on negative resistance concepts and a new theorem herein stated and proven. This technique is developed through two design examples a 5.9-12.4-GHz MESFET oscillator and a 2-8.4-GHz bipolar transistor oscillator.
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Schedule a callMore From: IEEE transactions on microwave theory and techniques
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