Bipolar Resistive Switching Research Articles

Artificial synapse using flexible and air-stable Cs3Bi2I9 perovskite memristors

Abstract Von Neumann bottleneck necessitates the creation of dedicated processors for artificial intelligence tasks, such as in-memory computing, where memristors are formulated as synapses. Perovskites are great candidates for memristors owing to their mixed ionic and electronic conduction as well as cost-effective processing techniques. In this work, we have developed a highly stable, lead-free perovskite memristors fabricated using thermally evaporating hot-pressed 0D Cesium Bismuth Iodide (Cs3Bi2I9) pellets on flexible PET substrates. The fabricated memristors exhibit repeatable bipolar resistive switching with operating voltages of -0.32 V and 0.26 V, an excellent ON/OFF ratio > 105, and an endurance > 104 cycles. The memristors were air-stable for more than 30 days and were repeatedly tested under high humidity (> 80%) atmospheric conditions without encapsulation. The resistive switching in these flexible devices persists even under applied mechanical stress up to a bending radius of 0.5 cm. Furthermore, the potential of these memristors for use as artificial synapse has been demonstrated by obtaining critical neuromorphic characteristics such as spike duration dependent plasticity, paired pulse facilitation, and long-term plasticity. This work indicates that 0D Cs3Bi2I9 memristors have the potential to mimic biological synaptic functions of learning and forgetting which may be useful to realize flexible and low power neuromorphic circuits in the near future.

TiOx-Based Implantable Memristor for Biomedical Engineering.

Implantable memristors are considered an emerging electronic technology that can simulate brain memory function and demonstrate some promising applications in the biomedical field. However, it remains a critical challenge to enhance their long-term stability and biocompatibility in implantation environments. In this work, an implantable memristor has been successfully fabricated based on TiOx using magnetron sputtering. The device demonstrated excellent thermal stability and recoverability at elevated temperatures, providing important experimental evidence for its applications under high-temperature environments. More importantly, after long-term testing under biological mimicking environments, such as fresh pork and bullfrog tissues, the memristor maintained excellent bipolar resistive switching (RS) characteristics and stable memory performance, indicating its potential for use in medical fields. Further analysis revealed that the RS behaviors of the device are mainly controlled by space charge limited currents (SCLC), Ohmic conduction, and Schottky emission conduction mechanisms. Therefore, the long-term stability of the implantable memristor is validated under real biological environments, promoting the transition of implantable memristor from theory to practical applications and laying the foundation for further biomedical applications.

Enhancing the Resistive Switching Properties of Nd2Ti2O7 Thin Films through Ca-Doping and Thermal Treatments

This study successfully synthesized Nd2(1-x)Ca2xTi2O7 (x = 0、0.05、0.09、0.13、0.17) thin films via sol-gel method, and systematically investigated the effects of different film thickness, thermal treatment, and doping concentration on the resistive switching characteristics. The results demonstrate that all devices exhibit bipolar resistive switching (BRS) behavior. Compared to undoped NTO thin film devices, doped devices exhibit significant improvements, particularly at a doping concentration of 13%, where the switching cycles increase from 524 to 1022, and the Ron/Roff ratio increases to approximately 102. Furthermore, after post-metal annealing (PMA) treatment, the switching cycles further increase to 1839, with Vset/VReset of −1.48V/0.66V, Ron/Roff >102, and data retention capability reaching 104seconds at both 25°C and 85°C. These improvements in electrical properties are attributed to the effective enhancement of oxygen vacancy concentration within the thin film due to Ca2+ doping, as well as the diffusion effects of Al and In ions after PMA treatment. In summary, this study demonstrates the potential application of Al/Nd2(1-x)Ca2xTi2O7/ITO devices in low-power non-volatile memory applications.

Oxygen vacancy-controlled forming-free bipolar resistive switching in Er-doped ZnO memristor

Oxygen vacancy-controlled forming-free bipolar resistive switching in Er-doped ZnO memristor

Facile Hydrothermal Synthesis and Resistive Switching Mechanism of the α-Fe2O3 Memristor.

Among the transition metal oxides, hematite (α-Fe2O3) has been widely used in the preparation of memristors because of its excellent physical and chemical properties. In this paper, α-Fe2O3 nanowire arrays with a preferred orientation along the [110] direction were prepared by a facile hydrothermal method and annealing treatment on the FTO substrate, and then α-Fe2O3 nanowire array-based Au/α-Fe2O3/FTO memristors were obtained by plating the Au electrodes on the as-prepared α-Fe2O3 nanowire arrays. The as-prepared α-Fe2O3 nanowire array-based Au/α-Fe2O3/FTO memristors have demonstrated stable nonvolatile bipolar resistive switching behaviors with a high resistive switching ratio of about two orders of magnitude, good resistance retention (up to 103 s), and ultralow set voltage (Vset = +2.63 V) and reset voltage (Vreset = -2 V). In addition, the space charge-limited conduction (SCLC) mechanism has been proposed to be in the high resistance state, and the formation and destruction of the conductive channels modulated by oxygen vacancies have been suggested to be responsible for the nonvolatile resistive switching behaviors of the Au/α-Fe2O3/FTO memristors. Our results show the potential of the Au/α-Fe2O3/FTO memristors in nonvolatile memory applications.

(Invited) Integration and Optimization of 2D Transition Metal Dichalcogenides as Switching Layers in Memristors

Memristive devices possess the ability to dynamically adjust resistance based on previous voltage and current inputs. They represent a frontier in next-generation computational hardware, offering unparalleled potential for brain-inspired computing and neuromorphic engineering. Among the various configurations, electrochemical metallization (ECM) memristors feature a solid electrolyte layer sandwiched between two electrodes and perform resistive switching via filament formation (SET) and dissolution (RESET) [1]. Recent studies have focused on the integration of two-dimensional (2D) materials into the design of ECM memristors, aiming at improving performance and unlocking new functionalities [2-4]. 2D transition metal dichalcogenides and hexagonal boron nitride, in particular, are promising candidates for realizing memristors with ultra-low switching voltages, suitable for neuromorphic computing and artificial synapses [5, 6].In this talk, I will focus on vertical ECM memristor in crossbar configuration using chemical vapor deposited (CVD), atomic-thick MoSe2 as switching material, and Au/Cu as bottom/top electrodes. The devices exhibit nonvolatility and bipolar resistive switching behavior, with well-defined SET/RESET voltages (below 1V in absolute value) [7]. We performed atomic-scale investigations by transmission electron microscopy to unveil the filament formation mechanism within the MoSe2 layer. Our results shed light on the Cu/MoSe2 interface, particularly critical for memristor performance, providing key information on the intermixing and diffusion mechanisms of Cu atoms within the device structure.Furthermore, we studied the effect of XeF2 fluorination of the MoSe2 films to tune their surface properties and improve the ion transport kinetics across the interface with Cu. By carefully controlling the XeF2 process, we were able to induce structural and chemical modifications in the MoSe2, such as layer thinning and doping/implantation. This could provide a way of controlling the interface morphology and ultimately the performance and reliability of the memristive devices. Transport properties and X-ray photoelectron spectroscopy analyses provided insights into the fluorination-induced modifications on the MoSe2 surface, offering a framework for performance optimization. Overall, these findings rationalize the 2D materials-based ECM memristor operation and highlight the potential for advanced applications.

Analysis of Oxide Capacitance Changes Based on the Formation–Annihilation of Conductive Filaments in a SiO2/Si-NCs/SiO2 Stack Layer-Based MIS-like Capacitor

This work reports on the correlation between resistive switching (RS) with capacitance switching (CS) states observed in SiO2/Si-nanocrystals (Si-NCs)/SiO2 stack layers using a metal-insulating semiconductor (MIS)-like device. The formation of Si-NCs, which act as conductive nodes, of about 6.7 nm in size was confirmed using a transmission electron microscope. These devices exhibit bipolar RS properties with an intermediate resistive state (IRS), which is a self-compliance behavior related to the presence of the Si-NCs layer. The current value changes from 40 nA to 550 µA, indicating RS from a high resistance state (HRS) to a low resistance state (LRS) with the IRS at 100 µA. The accumulation (CA) and inversion capacitance (CI) also change when these RS events occur. The CA switches from 2.52 nF to 3 nF with an intermediate CS of 2.7 nF for the HRS, LRS, and IRS, respectively. The CI also switches from 0.23 nF to 0.6 nF for the HRS and LRS, respectively. These devices show an ON/OFF current ratio of 104 with retention times of 104 s. Furthermore, both CA and CI states remained stable for more than 103 s. These findings highlight the potential of these devices for applications in information storage through memristor and memcapacitor technologies.

Nonlinear and linear conductance modulation and synaptic plasticity in stable tin-zinc oxide based-memristor for neuro-inspired computing

Inducing post-transition metals in an oxide semiconductor system has a high potential for use in storage for neuromorphic computing. It is challenging to find a material that can be switched stably between multiple resistance states. This research explores the memristive properties of Sn (post-transition metal)-doped ZnO (SZO) thin films, emphasizing their application in memristor devices. The (magnetron sputtered) synthesized SZO thin films in the form of Ag/SZO/Au/Ti/SiO₂ device demonstrated a clear bipolar resistive switching (BRS) behavior with VSET and VRESET of 1.0 V and −0.75 V, respectively. The memristor could change between a high resistance state and a low resistance state with a high RON/OFF rate of 104, mimicking synaptic behaviors such as potentiation and depression. This switching is attributed to the formation and dissolution of Ag filaments within the SZO layer, influenced by the migration of Ag⁺ ions and the presence of oxygen vacancies. These vacancies facilitate the formation of conductive filaments under positive bias and their dissolution under negative bias. The endurance and retention tests showed stable switching characteristics, with the memristor maintaining distinct HRS and LRS over 100 cycles and retaining these states for over 5K seconds without significant degradation. Finally, the nonlinearity values for potentiation and depression were αp∼1.6 and αd ∼ -0.14, suggesting that the memristor may be more responsive to increasing synaptic weights in biological systems. The linearity response at a very small pulse width showed the device is more applicable for neuromorphic applications. The observed memristor combined with stable endurance and retention performance, suggests that this memristor structure could play a crucial role in the development of artificial synapses and memory technologies.

Effect of annealing conditions on resistive switching in hafnium oxide-based MIM devices for low-power RRAM

Abstract This work presents resistive switching (RS) behaviour in HfO2-based low-power resistive random-access memory (RRAM) devices. A metal-insulator-metal (MIM) structure (Au/HfO2/Pt) was fabricated by sandwiching a thin insulating layer of HfO2 between Pt and Au electrodes. HfO2 films deposited by RF sputtering at room temperature were rapid thermally annealed in N2 ambient at 400 °C and 500 °C. Grazing angle x-ray diffraction (GIXRD), Field emission gun-scanning electron microscopy (FEG-SEM), atomic force microscopy (AFM), and x-ray photoelectron spectroscopy (XPS) were employed to analyse the phase, crystal structure, morphology, surface roughness and chemical composition of the HfO2 films. The bipolar RS could be observed in both as-deposited and annealed HfO2 film-based devices from I–V characteristics measured using a source meter. We have investigated the effect of annealing temperature and annealing ambient on the phase formation of HfO2 as well as the RS characteristics and compared with as-deposited film-based device. Annealed HfO2 film-based devices exhibited improved electrical characteristics, including stable and repeatable RS at significantly lower switching voltages (<1 V) which indicates low power consumption in these devices. The relatively lower processing temperature of the HfO2 films and that too in the films deposited by physical vapor deposition (PVD) technique-RF magnetron sputtering makes this study significantly useful for resistive switching based non-volatile memories.

Impact of Light on Coexistence of Memresistance, Meminductance, and Memcapacitance (MEMRIC) in Nanostructured Copper Oxide (CuO) Based Random Access Memory Devices.

We demonstrated the coexistence of memresistance, memcapacitance, and meminductance non-volatile bipolar analog resistive switching in Cu (top electrode)/CuO (active layer)/SS (bottom electrode) memory devices with and without presence of the light. The onset of memcapacitance and meminductance is noticed from the pinched-shaped characteristics in the first and third quadrants. The variation in the scan rate also impacts the coexistence characteristics by shifting the intercept point for low resistance (LRS) and high resistance (HRS) states in positive and negative biasing voltages. The durability and retention are measured over a period of 150 cycles and 1500 s with and without light illumination. The slopes for the Weibull cumulative distribution plot for set/reset state with and without light are 106.80/114.23 and 70.21/102.25, respectively, suggesting that the stability of the device increases with light illumination. Interestingly, the memcapacitance disappears after 600 cycles and after 60 . The double logarithmic I-V characteristics suggest the trap-assisted conduction (higher slope >2) in the higher external electric field, and Ohmic behavior in the lower applied field region. Thus, the present study provides a way for low-power electronics and photoresistors together with memresistance, memcapacitance, and meminductance, simultaneously, i. e., MEMRIC in a single device.

Anomalous resistive switching effect in La0.8Ca0.2MnO3/Nb:SrTiO3 structure

A barrier-type resistive switching (RS) unit, composed of a metal and Nb:SrTiO3 (NSTO), holds significant potential for data storage applications due to its high storage density, low operating voltage, and excellent stability. While extensive research has been conducted on conductive oxides (COs), there has been relatively less focus on the RS properties of heterogeneous structures combing CO electrodes and NSTO. Epitaxial growth of CO on NSTO is expected to yield devices with enhanced stability and repeatability. This study explores the RS characteristics of La0.8Ca0.2MnO3 (LCMO)/NSTO heterostructures through epitaxy of both conventional and anoxic LCMO films on (00 l)-oriented NSTO single crystal substrates. The results reveal that the conventional LCMO/NSTO structure exhibits a conventional counterclockwise bipolar RS (BRS) effect, while the anoxic LCMO/NSTO heterostructure demonstrates a unique clockwise (CW) BRS effect (exhibiting different RS characteristics under different applied voltages). The study concludes that the CW-BRS effect mechanism is attributed to a high concentration of oxygen vacancies (Vo) in LCMO. Under different external electric fields, Vo in LCMO and NSTO migrate to the LCMO/NSTO interface, respectively, leading to multiple changes in the interface barrier. These findings offer valuable experimental insights for utilizing CO in the field of RS applications.

A semiconducting supramolecular Co(II)-metallogel based resistive random access memory (RRAM) design with good endurance capabilities.

A highly efficient approach for synthesizing a supramolecular metallogel of Co(II) ions, denoted as CoA-TA, has been established under room temperature and atmospheric pressure conditions. This method employs the metal-coordinating organic ligand benzene-1,3,5-tricarboxylic acid as a low molecular weight gelator (LMWG) in DMF solvent. A comprehensive analysis of the mechanical properties of the resulting supramolecular Co(II)-metallogel was conducted through rheological investigation, considering angular frequency and thixotropic study. The hierarchical rocky network structure of the supramolecular Co(II)-metallogel was unveiled using field emission scanning electron microscopy (FESEM). Transmission electron microscopic (TEM) analysis showed rod-shaped structures via low-magnification high angle annular dark field (HAADF) bright field scanning transmission electron microscopic (STEM) imaging, while energy dispersive X-ray (EDX) elemental mapping confirmed its primary chemical constituents. The formation mechanism of the metallogel was examined via fourier transform infrared spectroscopy (FTIR) spectroscopy. The nature of the synthesized CoA-TA metallogel was affirmed through powder X-ray diffraction (PXRD) analysis. Furthermore, this study involved fabrication of Schottky diode structures in a metal-semiconductor-metal geometry based on cobalt(II) metallogel (CoA-TA), enabling observation of charge transport behavior. Remarkably, a resistive random access memory (RRAM) device utilizing cobalt(II) metallohydrogel (CoA-TA) demonstrated bipolar resistive switching at room temperature and under ambient conditions. The switching mechanism was investigated, revealing the formation and rupture of conductive filaments between metal electrodes that govern the resistive switching behavior. This RRAM device exhibited an impressive ON/OFF ratio (~ 414) and exceptional endurance over 5000 switching cycles. These structures offer great potential for diverse applications such as non-volatile memory design, neuromorphic computing, flexible electronics and optoelectronics. Their advantages lie in their fabrication process, reliable resistive switching behavior and overall performance stability.

Influence of rapid thermal annealing in vacuum on the resistive switching of Cu/ZnO/ITO devices

In this paper, we investigate the resistive switching (RS) behavior of Cu/ZnO/ITO devices subjected to various rapid thermal annealing (RTA) temperatures under vacuum. Current–voltage characteristics reveal that following the application of a positive electroforming voltage, both unannealed ZnO films and those annealed at 200 °C exhibit bipolar RS, consistent with the electrochemical metallization mechanism (ECM). However, films annealed at higher temperatures exhibit RS with both positive and negative electroforming threshold voltages and coexistence of switching in both polarities. Ultimately, these films display RS behavior aligned with the valence change mechanism (VCM), dominated by a negative electroforming voltage and RS on the negative bias side, while positive electroforming voltage and RS vanish for films annealed at 600 °C. Curve fitting analysis was conducted for Schottky emission (SE), space-charge limited current, and Poole–Frenkel (PF) emission mechanisms, with SE and PF emission providing better fits. These results demonstrate the tunability of ECM and VCM RS modes and the polarity of the forming bias, underscoring the potential of vacuum RTA in advancing ZnO-based memory device development.

Synaptic Properties of an Interfacial Memristor Based on a Ga2O3/Nb:SrTiO3 Heterojunction.

Memristors have been extensively studied for tremendous potential for future neuromorphic computing hardware applications because of their ability to imitate biological synaptic processes. Herein, we report an interfacial memristor based on a Ga2O3/Nb:SrTiO3 heterojunction that shows stable bipolar resistive switching behavior, long retention time, and high switching ratio. The conductance of the Au/Ga2O3/Nb:SrTiO3/In memristor can be gradually modulated under the voltage sweep mode as well as positive and negative pulse voltage stimulations, respectively, thus realizing the long-term potentiation/depression characteristics of the simulated biological synapse. A neural network based on the prepared memristor was built to recognize the handwritten picture data set with a recognition accuracy of 92.78% by using the NeuroSimV3.0 platform. Our work indicates that the Ga2O3/Nb:SrTiO3 heterojunction memristor has significant potential in a neuromorphic computing system.

Site-Selective Nanowire Synthesis and Fabrication of Printed Memristor Arrays with Ultralow Switching Voltages on Flexible Substrate.

Large area electronics (LAE) with the capability to sense and retain information are crucial for advances in applications such as wearables, digital healthcare, and robotics. The big data generated by these sensor-laden systems need to be scaled down or processed locally. In this regard, brain-inspired computing and in-memory computing have attracted considerable interest. However, suitable architectures have mainly been developed using costly and resource-intensive conventional lithography-based methods. There is a need for the development of innovative, resource-efficient fabrication routes that enable such devices and concepts. Herein, we present ZnO nanowire (NW)-based memristors on a polyimide substrate fabricated by a LAE-compatible and resource-efficient route comprising solution processing and printing technologies. High-resolution "drop-on-demand" and "direct ink write" printers are employed to deposit metallic layers (silver and gold) and a ZnO seed layer, needed for the site-selective growth of ZnO NWs via a low-cost hydrothermal method. The printed memristors show high bipolar resistance switching (ON/OFF ratio >103) between two nonvolatile states and consistent switching at ultralow voltages (all devices showed switching at amplitudes <200 mV), with the best performing device showing consistent cycled resistance switching over 4 orders of magnitude with SET and RESET voltages of about 71 and -57 mV, respectively. Thus, the presented devices offer reliable high resistance switching at the lowest reported voltage for printed memristors and prove to be competitive with many conventional nanofabrication-based devices. The presented results show the potential printed memristors technology holds for large-area, low-voltage sensing applications such as electronic skin.

Photo‐synaptic Memristor Devices from Solution‐processed Ga2O3 Thin Films

AbstractHardware integration with biological synaptic function is the key to realizing brain‐like computing. Resistive Random Access Memory (RRAM), with a similar structure to biological synapses, are important candidate for the simulation of biological synaptic function. In this work, Ga2O3 film as a functional layer of RRAM is prepared by the solution method, and an RRAM‐based photo‐synaptic device with an Ag/Ga2O3/Si structure is constructed subsequently. The device exhibits excellent bipolar resistive switching characteristics, with the merits of a large storage window and long retention time. Furthermore, the devices generated excitatory postsynaptic currents (EPSC) and paired‐pulse facilitation (PPF) behaviors under light pulse stimulation, enabling the simulation of synaptic plasticity. The transformation of synaptic behavior from short‐term memory (STM) to long‐term memory (LTM) is achieved by observing the spike‐duration dependent plasticity (SDDP), spike‐intensity dependent plasticity (SIDP), spike‐number dependent plasticity (SNDP) and spike‐rate dependent plasticity (SRDP) characteristics of photonic synapses under different conditions. The device also simulates the process of successive “learning‐forgotten‐remembering”, revealing that RRAM‐based photonic synapses have great potential in the fields of artificial visual perception and memory storage.

Threshold Switching and Resistive Switching in SnO2-HfO2 Laminated Ultrathin Films

Polycrystalline SnO2-HfO2 nanolaminated thin films were grown by atomic layer deposition (ALD) on SiO2/Si(100) and TiN substrates at 300 °C. The samples, when evaluated electrically, exhibited bipolar resistive switching. The sample object with a stacked oxide layer structure of SnO2 | HfO2 | SnO2 | HfO2 additionally exhibited bidirectional threshold resistive switching properties. The sample with an oxide layer structure of HfO2 | SnO2 | HfO2 displayed bipolar resistive switching with a ratio of high and low resistance states of three orders of magnitude. Endurance tests revealed distinguishable differences between low and high resistance states after 2500 switching cycles.

Bipolar resistive switching behavior of bilayer β-Ga2O3/WO3 thin film memristor device

This article investigates the bipolar resistive switching behavior of bilayer Au/β-Ga2O3/WO3 thin film (TF)/Ag heterostructure memristor device deposited using an electron beam evaporation technique. The purity of the deposited sample was confirmed by the XRD and FESEM with EDS characterizations. The root mean square roughness(RRMS) of single layer WO3 TF and heterolayer of Ga2O3/WO3 TF were obtained from the AFM analysis as 4.56 nm and 2.20 nm, respectively. The presence of more oxygen vacancies in WO3 sample was also confirmed by the XPS analysis. The optical measurement of the sample also revealed a bandgap of ∼ 4.35 eV for β-Ga2O3 TF and ∼ 3.66 eV for WO3 TF. Moreover, the bilayer Au/β-Ga2O3/WO3 TF/Ag heterostructure memristor device demonstrated bipolar resistive switching behavior with a good resistance ratio of ∼ 182, an endurance of 300 cycles, and a data retention of 103 s at room temperature. The device also yielded a low SET power of 1.17 mW (at 1.74 mA, +0.67 V) and a low RESET power of 2.50 mW (at 7.16 mA, – 0.35 V). The logarithmic current-voltage (I-V) relationship revealed that the switching behavior of the memristor device is mainly dominated by Ohmic conduction in LRS as well as Child’s square law, TCLC and Ohmic conductions in HRS. With the above parameters, the Au/β-Ga2O3/WO3 TF/Ag memristor device has the potential for future RRAM applications.

Reset-Voltage Controlled Resistance-State and Applications of Forming-Free Fe-Doped SrTiO3 Thin-Film Memristor.

In this study, we prepared a strontium ferrite titanate (STF) thin film using a sol-gel process to insulate resistive random-access memory (RRAM) applications. Compared to the typical strontium titanate (STO) RRAM, the improvement in the resistive switching characteristics in STF RRAM is obvious. The Al/STO/ITO/Glass RRAM set/reset voltages of -1.4 V/+3.3 V and the Al/STF/ITO/Glass RRAM set/reset voltages of -0.45 V/+1.55 V presented a memory window larger than 103, a low operating voltage and device stability of more than 104 s. In this study, the influence of Fe on the conducting paths and the bipolar resistive switching properties of Al/STF/ITO/Glass RRAM devices is investigated.

Reliable resistive switching and synaptic simulation behaviors in ammonium polyphosphate-based memristor with non-inert Al electrode

Abstract Memristive devices that integrate storage and computing capabilities are highly promising candidates for artificial synapses in neuromorphic systems. However, achieving both cost-effectiveness and high-performance in memristors remains a substantial challenge. Ammonium polyphosphate (APP), an all-inorganic ionic polymer, has been utilized in the fabrication of memristive devices due to its distinctive poly-ionic properties and exceptional ion mobility. In this study, a two-terminal APP-based memristor with an Al/APP/ITO structure was fabricated. The experimental results revealed improved bipolar resistive switching behavior, characterized by lower operating voltages, enhanced endurance performance, and extended retention time. Detailed data fitting and chemical bonding analysis suggest that the physical mechanism underlying resistive switching involves a combination of interfacial Schottky barrier and conductive filaments. Furthermore, adjustable device conductance is achieved by applying consecutive positive and negative voltage sweeps. Various synaptic functions, including excitatory postsynaptic current, short-term paired-pulse facilitation, long-term potentiation /depression, and spike-timing-dependent plasticity, are effectively emulated. This study presents an effective approach to enhancing the memristive characteristics of APP-based devices and positions APP as a viable candidate for innovative neuromorphic architectures.