Bernal Bilayer Graphene Research Articles

Giant high-order nonlinear and nonreciprocal electrical transports induced by valley flipping in Bernal bilayer graphene

We investigate the electrical transport properties of the minivalley polarized state proposed recently in slightly doped Bernal bilayer graphene (BLG) in large electric displacement fields. By minimizing the Hartree-Fock (HF) energy functional, we first confirm the appearance of minivalley polarized phase. At the low carrier doping regime, the one-pocket state will be stabilized where only one of the trigonal-wrapping-induced Fermi pockets near the atomic-valley center is filled. Then we study the electrical transport of the one-pocket state by solving the Boltzmann equation. We find that the valley polarization could be easily flopped by an in-plane electrical field, which will lead to hysteresis loop in the direct current (DC) I−V curves. Such irreversible current responses in the DC limit will directly induce strong nonlinear and nonreciprocal alternating current (AC) responses, which has been already observed in the recent experiments on BLG. Published by the American Physical Society 2025

Inelastic resonant tunnelling through adjacent localised electronic states in van der Waals heterostructures

Van der Waals heterostructures offer unprecedented opportunities to design next stage functional electronic 2D devices. Most architectures of those devices incorporate large bandgap insulator – hBN as an encapsulating or tunnel barrier layers. Here, we use an architecture of gated vertical tunnelling transistors to study a generic phenomenon of electron resonant tunnelling through adjacent localised electronic states in hBN barriers. We demonstrate that in the case of two localised electronic states, the tunnelling can be of inelastic nature giving rise to explicitly strong resonant features. It allows accurate tunnelling spectroscopy of delicate features of emitting and collecting layer electronic density of states, such as second neutrality point bandgap of moiré monolayer and electric field induced bandgap of Bernal bilayer graphene. Our findings enrich the perception of interaction mechanisms among the localised electronic states in hBN barriers paving the way for future explorations into their applications.

Linear and non-linear response of quadratic Lindbladians

Quadratic Lindbladians encompass a rich class of dissipative electronic and bosonic quantum systems, which have been predicted to host new and exotic physics. In this study, we develop a Lindblad-Keldysh spectroscopic response formalism for open quantum systems that elucidates their steady-state response properties and dissipative phase transitions via finite-frequency linear and non-linear probes. As illustrative examples, we utilize this formalism to calculate the (1) density and dynamic spin susceptibilities of a boundary driven XY model at and near criticality, (2) linear and non-linear optical responses in Bernal bilayer graphene coupled to dissipative leads, and (3) steady state susceptibilities in a bosonic optical lattice. We find that the XY model spin density wavelength diverges with critical exponent 1/2, and there are gapless dispersive modes in the dynamic spin response that originate from the underlying spin density wave order; additionally the dispersing modes of the weak and ultra-strong dissipation limits exhibit a striking correspondence since the boundary dissipators couple only weakly to the bulk in both cases. In the optical response of the Bernal bilayer, we find that the diamagnetic response can decrease with increasing occupation, as opposed to in closed systems where the response increases monotonically with occupation; we study the effect of second harmonic generation and shift current and find that these responses, forbidden in centrosymmetric closed systems, can manifest in these open systems as a result of dissipation. We compare this formalism to its equilibrium counterpart and draw analogies between these non-interacting open systems and strongly interacting closed systems.

Symmetry-broken metallic orders in spin-orbit-coupled Bernal bilayer graphene

Symmetry-broken metallic orders in spin-orbit-coupled Bernal bilayer graphene

Criterion for vanishing valley asymmetric transmission in dual-gated bilayer graphene

Abstract Realizing valley asymmetric transmission(VAT) for incoming valley unpolarized Dirac carriers across an electrostatically modulated confinement potential(ECP) step, which is located at the interface of the unipolar ( n − n ′ ) junction in dual-gated Bernal-bilayer graphene(BBG), has caught growing attention because it provides a platform to study the valley polarizer. Such a junction, however, seems to preclude from supporting vanishing VAT. Based on the effective two-band Hamiltonian of BBG with wave matching approach, we demonstrate theoretically that VAT through the n/n′ interface vanishes in the following conditions: (i) the disappearing electrostatically modulated interlayer potential difference(EPD), or (ii) the invariance condition of the sum or difference of ECPs and EPDs, which physically corresponds to the zero band offset of the conduction or valence band in the band alignment of n − n ′ junction. Guided by this, it is worth mentioning that the we can derive simple, analytical valley-independent expressions for the reflection and transmission probabilities. When the same invariant conditions occur, our calculations further show the appearance of the nearly vanishing VAT for the four-band model in bilayer graphene with ‘Mexican hat’-like band. As a byproduct, we apply these findings to suggest the best design for the valley-dependent selection of momenta based on dual-gated BBG connected to two pristine BBG electrodes in which ECPs of the two outer regions are distinguishable and show that the sign of valley polarization can be switched via varying EPD. We expect our results can provide guidance for future device applications relying on ballistic and valley-selective transport.

Band gap opening in Bernal bilayer graphene under applied electric field calculated by DFT

This paper proposes the induction and further analysis of band gap opening in Bernal bilayer graphene based on Density Functional Theory (DFT). By simulating a sawtooth-like potential configured so that the electric field (the slope) ranges from 1 V/nm to 10 V/nm, it was found that the band gap reached approximately 325 meV, where it saturated. Although the band gap was consistently direct, it was observed that as the applied electric field increased, the band gap shifted from the high-symmetry K point to other points.

Interaction-Driven Quasi-Insulating Ground States of Gapped Electron-Doped Bilayer Graphene.

Bernal bilayer graphene has recently been discovered to exhibit a wide range of unique ordered phases resulting from interaction-driven effects and encompassing spin and valley magnetism, correlated insulators, correlated metals, and superconductivity. This Letter reports on a novel family of correlated phases characterized by spin and valley ordering, distinct from those reported previously. These phases emerge in electron-doped bilayer graphene where the energy bands are exceptionally flat, manifested through an intriguing nonlinear current-bias behavior that occurs at the onset of the phases and is accompanied by an insulating temperature dependence. These characteristics align with the presence of charge- or spin-density-wave states that open a gap on a portion of the Fermi surface or fully gapped Wigner crystals, resulting in an exceptionally intricate phase diagram.

Phonon-mediated unconventional superconductivity in rhombohedral stacked multilayer graphene

Understanding the origin of superconductivity in correlated two-dimensional materials is a key step in leveraging material engineering techniques for next-generation nanoscale devices. While it is widely accepted that phonons fluctuations only mediate conventional (s-wave) superconductivity, the common phenomenology of superconductivity in Bernal bilayer and rhombohedral trilayer graphene, as well as in a large family of graphene-based moiré systems, suggests a common superconducting mechanism across these platforms. In particular, in all these platforms some superconducting regions violate the Pauli limit, indicating unconventional superconductivity, naively ruling out conventional phonon-mediated pairing as the underlying mechanism. Here we combine first principles simulations with effective low-energy theories to investigate the superconducting mechanism and pairing symmetry in rhombohedral stacked graphene multilayers. We find that phonon-mediated superconductivity explains the main experimental findings, namely the displacement field and doping level dependence of the critical temperature, and the presence of two superconducting regions with different pairing symmetries that depend on the parent normal state. In particular, we find that intra-valley phonon scattering favors a triplet f-wave pairing when combined with electronic correlations stabilizing a spin- and valley-polarized normal state. We also propose a so far unexplored superconducting region at higher hole doping densities nh ≈ 4 × 1012 cm−2, and demonstrate how this highly hole-doped regime can be reached in heterostructures consisting of monolayer α-RuCl3 and rhombohedral trilayer graphene. Our findings promote phonon-mediated pairing as a strong contender to explain superconductivity across a wide range of graphene platforms, and demonstrate that phonons can, in fact, stabilize unconventional superconducting orders.

High-temperature quantum valley Hall effect with quantized resistance and a topological switch.

Edge states of a topological insulator can be used to explore fundamental science emerging at the interface of low dimensionality and topology. Achieving a robust conductance quantization, however, has proven challenging for helical edge states. In this work, we show wide resistance plateaus in kink states-a manifestation of the quantum valley Hall effect in Bernal bilayer graphene-quantized to the predicted value at zero magnetic field. The plateau resistance has a very weak temperature dependence up to 50 kelvin and is flat within a dc bias window of tens of millivolts. We demonstrate the electrical operation of a topology-controlled switch with an on/off ratio of 200. These results demonstrate the robustness and tunability of the kink states and its promise in constructing electron quantum optics devices.

Swapping exchange and spin-orbit induced correlated phases in proximitized Bernal bilayer graphene

Swapping exchange and spin-orbit induced correlated phases in proximitized Bernal bilayer graphene

Tunable superconductivity in electron- and hole-doped Bernal bilayer graphene.

Graphene-based, high-quality, two-dimensional electronic systems have emerged as a highly tunable platform for studying superconductivity1-21. Specifically, superconductivity has been observed in both electron- and hole-doped twisted graphene moiré systems1-17, whereas in crystalline graphene systems, superconductivity has so far been observed onlyin hole-doped rhombohedral trilayer graphene(RTG)18 and hole-doped Bernal bilayer graphene (BBG)19-21. Recently, enhanced superconductivity has been demonstrated20,21 in BBG because of the proximity to a monolayer WSe2. Here we report the observation of superconductivity and a series of flavour-symmetry-breaking phases in electron- and hole-doped BBG/WSe2 devices by electrostatic doping. The strength of the observed superconductivity is tunable by applied vertical electric fields. The maximum Berezinskii-Kosterlitz-Thouless transition temperature for the electron- and hole-doped superconductivity is about 210 mK and 400 mK, respectively. Superconductivities emerge only when the applied electric fields drive the BBG electron or hole wavefunctions towards the WSe2 layer, underscoring the importance of the WSe2 layer in the observed superconductivity. The hole-doped superconductivity violates the Pauli paramagnetic limit, consistent with an Ising-like superconductor. By contrast, the electron-doped superconductivity obeys the Pauli limit, although the proximity-induced Ising spin-orbit coupling is also notable in the conduction band. Our findings highlight the rich physics associated with the conduction band in BBG, paving the way for further studies into the superconducting mechanisms of crystalline graphene and the development of superconductor devices based on BBG.

Probing the tunable multi-cone band structure in Bernal bilayer graphene

Bernal bilayer graphene (BLG) offers a highly flexible platform for tuning the band structure, featuring two distinct regimes. One is a tunable band gap induced by large displacement fields. Another is a gapless metallic band occurring at low fields, featuring rich fine structure consisting of four linearly dispersing Dirac cones and van Hove singularities. Even though BLG has been extensively studied experimentally, the evidence of this band structure is still elusive, likely due to insufficient energy resolution. Here, we use Landau levels as markers of the energy dispersion and analyze the Landau level spectrum in a regime where the cyclotron orbits of electrons or holes in momentum space are small enough to resolve the distinct mini Dirac cones. We identify the presence of four Dirac cones and map out topological transitions induced by displacement field. By clarifying the low-energy properties of BLG bands, these findings provide a valuable addition to the toolkit for graphene electronics.

Electrical Control of Spin and Valley in Spin-Orbit Coupled Graphene Multilayers.

Electrical control of magnetism has been a major technological pursuit of the spintronics community, owing to its far-reaching implications for data storage and transmission. Here, we propose and analyze a new mechanism for electrical switching of isospin, using chiral-stacked graphene multilayers, such as Bernal bilayer graphene or rhombohedral trilayer graphene, encapsulated by transition metal dichalcogenide (TMD) substrates. Leveraging the proximity-induced spin-orbit coupling from the TMD, we demonstrate electrical switching of correlation-induced spin and/or valley polarization, by reversing a perpendicular displacement field or the chemical potential. We substantiate our proposal with both analytical arguments and self-consistent Hartree-Fock numerics. Finally, we illustrate how the relative alignment of the TMDs, together with the top and bottom gate voltages, can be used to selectively switch distinct isospin flavors, putting forward correlated Van der Waals heterostructures as a promising platform for spintronics and valleytronics.

De Haas-van Alphen spectroscopy and magnetic breakdown in moiré graphene.

Quantum oscillations originating from the quantization of electron cyclotron orbits provide sensitive diagnostics of electron bands and interactions. We report on nanoscale imaging of the thermodynamic magnetization oscillations caused by the de Haas-van Alphen effect in moiré graphene. Scanning by means of superconducting quantum interference device (SQUID)-on-tip in Bernal bilayer graphene crystal axis-aligned to hexagonal boron nitride reveals large magnetization oscillations with amplitudes reaching 500 Bohr magneton per electron in weak magnetic fields, unexpectedly low frequencies, and high sensitivity to superlattice filling fraction. The oscillations allow us to reconstruct the complex band structure, revealing narrow moiré bands with multiple overlapping Fermi surfaces separated by unusually small momentum gaps. We identified sets of oscillations that violate the textbook Onsager Fermi surface sum rule, signaling formation of broad-band particle-hole superposition states induced by coherent magnetic breakdown.

Spin-polarized pairing induced by the magnetic field in the Bernal bilayer graphene

Recent experimental findings have demonstrated the occurrence of superconductivity in Bernal bilayer graphene when induced by a magnetic field. In this study, we conduct a theoretical investigation of the potential pairing symmetry within this superconducting system. By developing a theoretical model, we primarily calculate the free energy of the system with p + ip-wave parallel spin pairing, p + ip-wave anti-parallel spin pairing and d + id-wave pairing symmetry. Our results confirm that the magnetic field is indeed essential for generating the superconductivity. We discover that the p + ip-wave parallel spin pairing leads to a lower free energy for the system. The numerical calculations of the energy band structure, zero-energy spectral function and density of states for each of the three pairing symmetries under consideration show a strong consistency with the free energy results.

Improving thermoelectric properties of Bernal bilayer graphene by strontium intercalation: A DFT study

To meet the growing energy demand, improving power generation efficiency is required. This study explores the potential of enhancing the thermoelectric properties of Bernal bilayer graphene (BBG) through strontium (Sr) intercalation. Density functional theory and Boltzmann transport equations are employed to conduct ab initio calculations to evaluate its electronic and thermoelectric characteristics. The results reveal that the Sr intercalated AB stacking BG (Sr intercalated in BBG), designated as SrC6, exhibits metallic behavior, resulting in n-type conductivity and a noticeable shift of the Fermi level toward the conduction band. The Seebeck coefficient increases considerably with temperature, shifting from hole carrier to electron carrier. When comparing the intercalated compound with pristine bilayer graphene, a significant improvement in electrical conductivity is observed and remarkable improvement of ZT coefficient at temperature range [300, 1000K]. The alkaline earth metals Sr intercalation in bilayer graphene is therefore a new suitable way to improve the TE properties of bilayer graphene in order to making them a good candidate for TE devices.

Gate-Defined Topological Josephson Junctions in Bernal Bilayer Graphene.

Recent experiments on Bernal bilayer graphene (BLG) deposited on monolayer WSe_{2} revealed robust, ultraclean superconductivity coexisting with sizable induced spin-orbit coupling. Here, we propose BLG/WSe_{2} as a platform to engineer gate-defined planar topological Josephson junctions, where the normal and superconducting regions descend from a common material. More precisely, we show that if superconductivity in BLG/WSe_{2} is gapped and emerges from a parent state with intervalley coherence, then Majorana zero-energy modes can form in the barrier region upon applying weak in-plane magnetic fields. Our results spotlight a potential pathway for "internally engineered" topological superconductivity that minimizes detrimental disorder and orbital-magnetic-field effects.

Orbitally Controlled Quantum Hall States in Decoupled Two-Bilayer Graphene Sheets.

The authors report on integer and fractional quantum Hall states in a stack of two twisted Bernal bilayer graphene sheets. By exploiting the momentum mismatch in reciprocal space, the single-particle tunneling between both bilayers is suppressed. Since the bilayers are spatially separated by only 0.34nm, the stack benefits from strong interlayer Coulombic interactions. These interactions can cause the formation of a Bose-Einstein condensate. Indeed, such a condensate is observed for half-filling in each bilayer sheet. However, only when the partially filled levels have orbital index 1. It is absent for partially filled levels with orbital index 0. This discrepancy is tentatively attributed to the role of skyrmion/anti-skyrmion pair excitations and the dependence of the energy of these excitations on the orbital index. The application of asymmetric top and bottom gate voltages enables to influence the orbital nature of the electronic states of the graphene bilayers at the chemical potential and to navigate in orbital mixed space. The latter hosts an even denominator fractional quantum Hall state at total filling of -3/2. These observations suggest a unique edge reconstruction involving both electrons and chiral p-wave composite fermions.

Stabilizing Fluctuating Spin-Triplet Superconductivity in Graphene via Induced Spin-Orbit Coupling.

A recent experiment showed that a proximity-induced Ising spin-orbit coupling enhances the spin-triplet superconductivity in Bernal bilayer graphene. Here, we show that, due to the nearly perfect spin rotation symmetry of graphene, the fluctuations of the spin orientation of the triplet order parameter suppress the superconducting transition to nearly zero temperature. Our analysis shows that both an Ising spin-orbit coupling and an in-plane magnetic field can eliminate these low-lying fluctuations and can greatly enhance the transition temperature, consistent with the recent experiment. Our model also suggests the possible existence of a phase at small anisotropy and magnetic field which exhibits quasilong-range ordered spin-singlet charge 4e superconductivity, even while the triplet 2e superconducting order only exhibits short-ranged correlations. Finally, we discuss relevant experimental signatures.

Unconventional correlated insulator in CrOCl-interfaced Bernal bilayer graphene

The realization of graphene gapped states with large on/off ratios over wide doping ranges remains challenging. Here, we investigate heterostructures based on Bernal-stacked bilayer graphene (BLG) atop few-layered CrOCl, exhibiting an over-1-GΩ-resistance insulating state in a widely accessible gate voltage range. The insulating state could be switched into a metallic state with an on/off ratio up to 107 by applying an in-plane electric field, heating, or gating. We tentatively associate the observed behavior to the formation of a surface state in CrOCl under vertical electric fields, promoting electron–electron (e–e) interactions in BLG via long-range Coulomb coupling. Consequently, at the charge neutrality point, a crossover from single particle insulating behavior to an unconventional correlated insulator is enabled, below an onset temperature. We demonstrate the application of the insulating state for the realization of a logic inverter operating at low temperatures. Our findings pave the way for future engineering of quantum electronic states based on interfacial charge coupling.