Bias Regime Research Articles

Virility does not imply immensity: Testis size, accessory gland size and ejaculate depletion pattern do not evolve in response to experimental manipulation of sex ratio in Drosophila melanogaster

Sperm competition theory predicts that with increase in sperm competition, males either invest more in reproductive organ(s) and/or improve ejaculate investment. We test this idea using experimental evolution in Drosophila melanogaster. We maintained replicate populations of Drosophila melanogaster under male (M) and female (F) biased sex ratio regimes for more than a hundred generations with the result that males from the M regime evolved higher sperm competitive abilities relative to males from the F regime. In the present study, we measured the testes and the accessory gland size of virgin and singly mated males from the M and F regimes. The M and F males do not differ in either testis or accessory gland size. Additionally, ejaculate investment is not different in the M and F males, as measured by reduction in testis and accessory gland sizes. Thus, contrary to theoretical prediction and evidence from other species, we found that evolved differences in sperm competitive ability are not necessarily due to evolution of testis/accessory gland size or strategic ejaculate investment in these populations.

Low-bias negative differential conductance controlled by electrode separation**Project supported by the National Natural Science Foundation of China (Grant Nos. 11374195 and 11405098) and the Natural Science Foundation of Shandong Province, China (Grant No. ZR2013FM006).

The electronic transport properties of a single thiolated arylethynylene molecule with 9,10-dihydroanthracene core, denoted as TADHA, is studied by using non-equilibrium Green’s function formalism combined with ab initio calculations. The numerical results show that the TADHA molecule exhibits excellent negative differential conductance (NDC) behavior at lower bias regime as probed experimentally. The NDC behavior of TADHA molecule originates from the Stark effect of the applied bias voltage, by which the highest occupied molecular orbital (HOMO) and the HOMO-1 are pulled apart and become localized. The NDC behavior of TADHA molecular system is tunable by changing the electrode distance. Shortening the electrode separation can enhance the NDC effect which is attributed to the possible increase of coupling between the two branches of TADHA molecule.

Photosensitivity of InZnO thin-film transistors using a solution process

Oxide semiconductor devices play a role in both switches and photo-sensors in interactive displays. During the fabrication of oxide semiconductor devices, the sol-gel solution process that is used to form an oxide semiconductor has various merits, including its simplicity and low cost as well as its good composition controllability. Here, we present the photosensitivity characteristics of an oxide photo thin-film transistor (TFT) created using the InZnO (IZO) sol-gel process. Upon exposure to light, photocurrent (Iphoto) in the negative gate bias regime is significantly increased with a negligible threshold voltage shift. The photosensitivity is modulated by geometrical factors and by the IZO material composition. We observed a significant effect of the channel thickness and IZO composition on the photosensitivity, which was attributed to the screening effect of optically ionized oxygen vacancies (Vo++). In particular, the optimized bi-layered oxide photo-TFT presents a good Iphoto/Idark photosensitivity value of 3 × 104 and a subthreshold slope of 0.96 V/decade. In addition, the persistent photoconductivity of the oxide photo-TFT was removed by applying positive gate voltage, resulting in good high-speed operation. These results taken together demonstrate that the IZO photo-TFT produced by the sol-gel process can be workable when applied to interactive displays.

Microsecond Response in Organic Electrochemical Transistors: Exceeding the Ionic Speed Limit.

Organic electrochemical transistors (OECTs) are transistors that can have extrinsic transconductances as high as 400 S m-1 , but they typically have response times on the order of 1 ms or longer. These response speeds are limited by ion transport. It is shown that OECTs can exceed the ionic response speed by a factor of 30 when operated in a high-speed bias regime.

Poiseuille flow-induced vibrations of two tandem circular cylinders with different mass ratios

Flow-induced vibrations of two tandem circular cylinders with different mass ratios confined between two parallel walls are numerically studied via a lattice Boltzmann method. With fixed Reynolds number Re = 100 and blockage ratio β = 1/4, the effects of mass ratio m* = [0.0625, 16] and streamwise separation between two cylinders S/D = [1.125, 10] on the cylinder motions and vortex wake modes are investigated. A variety of distinct cylinder motion regimes involving the symmetric periodic vibration, biased quasi-periodic vibration, beating vibration, and steady regimes, with the corresponding wake structures, e.g., two rows of alternately rotating vortices, a single row of same-sign vortices, and steady wake, are observed. For each current case, the cylinder motion type is exclusive and in the binary oscillation regime, both cylinders always vibrate at a common primary frequency. The lighter cylinder usually oscillates at a larger amplitude than the heavier one, while the heavier cylinder undergoes larger lift force than the lighter one. The lift force and cylinder displacement always behave as an out-of-phase state. In the gap-interference region, large-amplitude oscillations could be produced extensively and in the wake-interference region, the cylinder motions and fluid flows are mainly dependent on the upstream cylinder. When the separation is large enough, both cylinders behave as two isolated ones. The mechanisms for the excitations of cylinder vibrations have also been analysed.

A modified Shockley equation taking into account the multi-element nature of light emitting diodes based on nanowire ensembles

In this work we study how the multi-element nature of light emitting diodes (LEDs) based on nanowire (NW) ensembles influences their current voltage (I–V) characteristics. We systematically address critical issues of the fabrication process that can result in significant fluctuations of the electrical properties among the individual NWs in such LEDs, paying particular attention to the planarization step. Electroluminescence (EL) maps acquired for two nominally identical NW-LEDs reveal that small processing variations can result in a large difference in the number of individual nano-devices emitting EL. The lower number of EL spots in one of the LEDs is caused by its inhomogeneous electrical properties. The I–V characteristics of this LED cannot be described well by the classical Shockley model. We are able to take into account the multi-element nature of such LEDs and fit the I–V characteristics in the forward bias regime by employing an ad hoc adjusted version of the Shockley equation. More specifically, we introduce a bias dependence of the ideality factor. The basic considerations of our model should remain valid also for other types of devices based on ensembles of interconnected p–n junctions with inhomogeneous electrical properties, regardless of the employed material system.

Charge and spin current oscillations in a tunnel junction induced by magnetic field pulses

Usually, charge and spin transport properties in tunnel junctions are studied in the DC bias regime and/or in the adiabatic regime of time-varying magnetic fields. In this letter, the temporal dynamics of charge and spin currents in a tunnel junction induced by pulsed magnetic fields is considered. At low bias voltages, energy and momentum of the conduction electrons are nearly conserved in the tunneling process, leading to the description of the junction as a spin-1/2 fermionic system coupled to time-varying magnetic fields. Under the influence of pulsed magnetic fields, charge and spin current can flow across the tunnel junction, displaying oscillatory behavior, even in the absence of DC bias voltage. A type of spin capacitance function, in close analogy to electric capacitance, is predicted.

Tuning the conductance of benzene-based single-molecule junctions

Single-molecule junctions are elementary building blocks in novel electronics devices, and therefore, it is essential to understand the charge transport mechanisms at the single-molecular level. According to recent studies, the linker atoms connecting the organic molecule with the electrodes play a crucial role in optimizing the transport properties as well as thermodynamical stability of a molecular junction. We address this issue by considering N, O, S, and Se atoms as prospective linkers anchoring the benzene molecule to the Au(1 0 0) electrodes. Calculations based on non-equilibrium Green's function approach are performed within the framework of the density functional theory. Electron transport is studied in detail by analyzing the transmission spectra, density-of-states distributions, and current–voltage characteristics. Results show that the choice of linkers strongly affects the conductance of the junctions under study: at low bias regime, the current through N-linked molecules is remarkably higher as compared to the case of S and Se linkers, whereas the thermodynamical stability is similar. This offers an additional means of modifying the current–voltage characteristics of benzene-based molecular junctions by an appropriate selection of linkers.

Inelastic effects in molecular transport junctions: The probe technique at high bias.

We extend the Landauer-Büttiker probe formalism for conductances to the high bias regime and study the effects of environmentally induced elastic and inelastic scattering on charge current in single molecule junctions, focusing on high-bias effects. The probe technique phenomenologically incorporates incoherent elastic and inelastic effects to the fully coherent case, mimicking a rich physical environment at trivial cost. We further identify environmentally induced mechanisms which generate an asymmetry in the current, manifested as a weak diode behavior. This rectifying behavior, found in two types of molecular junction models, is absent in the coherent-elastic limit and is only active in the case with incoherent-inelastic scattering. Our work illustrates that in the low bias-linear response regime, the commonly used "dephasing probe" (mimicking only elastic decoherence effects) operates nearly indistinguishably from a "voltage probe" (admitting inelastic-dissipative effects). However, these probes realize fundamentally distinct I-V characteristics at high biases, reflecting the central roles of dissipation and inelastic scattering processes on molecular electronic transport far-from-equilibrium.

A physical model for the reverse leakage current in (In,Ga)N/GaN light-emitting diodes based on nanowires

We investigated the origin of the high reverse leakage current in light emitting diodes (LEDs) based on (In,Ga)N/GaN nanowire (NW) ensembles grown by molecular beam epitaxy on Si substrates. To this end, capacitance deep level transient spectroscopy (DLTS) and temperature-dependent current-voltage (I-V) measurements were performed on a fully processed NW-LED. The DLTS measurements reveal the presence of two distinct electron traps with high concentrations in the depletion region of the p-i-n junction. These band gap states are located at energies of 570 ± 20 and 840 ± 30 meV below the conduction band minimum. The physical origin of these deep level states is discussed. The temperature-dependent I-V characteristics, acquired between 83 and 403 K, show that different conduction mechanisms cause the observed leakage current. On the basis of all these results, we developed a quantitative physical model for charge transport in the reverse bias regime. By taking into account the mutual interaction of variable range hopping and electron emission from Coulombic trap states, with the latter being described by phonon-assisted tunnelling and the Poole-Frenkel effect, we can model the experimental I-V curves in the entire range of temperatures with a consistent set of parameters. Our model should be applicable to planar GaN-based LEDs as well. Furthermore, possible approaches to decrease the leakage current in NW-LEDs are proposed.

Type II InAs/GaAsSb quantum dots: Highly tunable exciton geometry and topology

External control over the electron and hole wavefunctions geometry and topology is investigated in a p-i-n diode embedding a dot-in-a-well InAs/GaAsSb quantum structure with type II band alignment. We find highly tunable exciton dipole moments and largely decoupled exciton recombination and ionization dynamics. We also predicted a bias regime where the hole wavefunction topology changes continuously from quantum dot-like to quantum ring-like as a function of the external bias. All these properties have great potential in advanced electro-optical applications and in the investigation of fundamental spin-orbit phenomena.

ONE-DIMENSIONAL STOCHASTIC MODELS WITH OPEN BOUNDARIES: INTEGRABILITY, APPLICATIONS AND -DEFORMED KNIZHNIK–ZAMOLODCHIKOV EQUATIONS

This thesis contains work on three separate topics, but with common themes running throughout. These themes are drawn together in the asymmetric exclusion process (ASEP) – a stochastic process describing particles hopping on a one-dimensional lattice. The open boundary ASEP is set on a finite length lattice, with particles entering and exiting at both boundaries. The transition matrix of the open boundary ASEP provides a representation of the two boundary Temperley–Lieb algebra, and the integrability of the system allows the diagonalisation of the transition matrix through the Bethe ansatz method. We study the ASEP in the reverse bias regime, where the boundary injection and extraction rates oppose the preferred direction of flow in the bulk. We find the exact asymptotic relaxation rate along the coexistence line by analysing solutions of the Bethe equations. The Bethe equations are first solved numerically, then the form of the resulting root distribution is used as the basis for an asymptotic analysis. The reverse bias induces the appearance of isolated roots, which introduces a modified length scale in the system. We describe the careful treatment of the isolated roots that is required in both the numerical procedure, and in the asymptotic analysis. The second topic of this thesis is the study of a priority queueing system, modelled as an exclusion process with moving boundaries. We call this model the prioritising exclusion process (PEP). In the PEP, the hopping of particles corresponds to high priority customers overtaking low priority customers in order to gain service sooner. Although the PEP is not integrable, techniques from the ASEP allow calculation of exact density profiles in certain phases, and the calculation of approximate average waiting times when the expected queue length is finite. The final topic of this thesis is a study of polynomial solutions of a q-deformed Knizhnik–Zamolodchikov (qKZ) equation with mixed boundaries. The qKZ equation studied here is given in terms of the one boundary Temperley–Lieb algebra, and its solutions have a factorised form in terms of Baxterized elements of the type B Hecke algebra. We find an integral form for certain components of the qKZ solution, along with

Comparison of the magneto-Peltier and magneto-Seebeck effects in magnetic tunnel junctions

Understanding heat generation and transport processes in a magnetic tunnel junction (MTJ) is a significant step towards improving its application in current memory devices. Recent work has experimentally demonstrated the magneto-Seebeck effect in MTJs, where the Seebeck coefficient of the junction varies as the magnetic configuration changes from a parallel (P) to an anti-parallel (AP) configuration. Here we report the study on its as-yet-unexplored reciprocal effect, the magneto-Peltier effect, where the heat flow carried by the tunneling electrons is altered by changing the magnetic configuration of the MTJ. The magneto-Peltier signal that reflects the change in the temperature difference across the junction between the P and AP configurations scales linearly with the applied current in the small bias but is greatly enhanced in the large bias regime, due to higher-order Joule heating mechanisms. By carefully extracting the linear response which reflects the magneto-Peltier effect, and comparing it with the magneto-Seebeck measurements performed on the same device, we observe results consistent with Onsager reciprocity. We estimate a magneto-Peltier coefficient of 13.4 mV in the linear regime using a three-dimensional thermoelectric model. Our result opens up the possibility of programmable thermoelectric devices based on the Peltier effect in MTJs.

Visible electroluminescence from a ZnO nanowires/p-GaN heterojunction light emitting diode.

In the current paper we apply catalyst assisted vapour phase growth technique to grow ZnO nanowires (ZnO nws) on p-GaN thin film obtaining EL emission in reverse bias regime. ZnO based LED represents a promising alternative to III-nitride LEDs, as in free devices: the potential is in near-UV emission and visible emission. For ZnO, the use of nanowires ensures good crystallinity of the ZnO, and improved light extraction from the interface when the nanowires are vertically aligned. We prepared ZnO nanowires in a tubular furnace on GaN templates and characterized the p-n ZnO nws/GaN heterojunction for LED applications. SEM microscopy was used to study the growth of nanowires and device preparation. Photoluminescence (PL) and Electroluminescence (EL) spectroscopies were used to characterize the heterojunction, showing that good quality of PL emission is observed from nanowires and visible emission from the junction can be obtained from the region near ZnO contact, starting from onset bias of 6V.

Superconducting Integrated Terahertz Spectrometers

A superconducting integrated receiver (SIR) comprises all of the elements needed for heterodyne detection on a single chip. Light weight and low power consumption combined with nearly quantum-limited sensitivity and a wide tuning range of the superconducting local oscillator make the SIR a perfect candidate for many practical applications. For the first time, we demonstrated the capabilities of the SIR technology for remote operation under harsh environmental conditions and for heterodyne spectroscopy at atmospheric limb sounding on board a high-altitude balloon. Recently, the SIR was successfully implemented for the first spectral measurements of THz radiation emitted from intrinsic Josephson junction stacks (BSCCO mesa) at frequencies up to 750 GHz; linewidth below 10 MHz has been recorded in the high bias regime. The phase-locked SIR has been used for the locking of the BSCCO oscillator under the test. To extend the operation range of the SIR well above 1 THz, a new technique for fabrication of high-quality SIS tunnel junctions with gap voltage Vg up to 5.3 mV has been developed. Integration of a superconducting high-harmonic phase detector with a cryogenic oscillator opens a possibility for efficient phase locking of the sources with free-running linewidth up to 30 MHz that is important both for BSCCO mesa and NbN/MgO/NbN oscillators.

Asymmetric resonant exchange qubit under the influence of electrical noise

We investigate the influence of electrical charge noise on a resonant exchange (RX) qubit in a triple quantum dot. This RX qubit is a variation of the exchange-only spin qubit which responds to a narrow-band resonant frequency. Our noise model includes uncorrelated charge noise in each quantum dot giving rise to two independent (noisy) bias parameters $\varepsilon$ and $\Delta$. We calculate the energy splitting of the two qubit states as a function of these two bias detuning parameters to find "sweet spots", where the qubit is least susceptible to noise. Our investigation shows that such sweet spots exist within the low bias regime, in which the bias detuning parameters have the same magnitude as the hopping parameters. The location of the sweet spots in the $(\varepsilon,\Delta)$ plane depends on the hopping strength and asymmetry between the quantum dots. In the regime of weak charge noise, we identify a new favorable operating regime for the RX qubit based on these sweet spots.

Charge transport through a semiconductor quantum dot-ring nanostructure

Transport properties of a gated nanostructure depend crucially on the coupling of its states to the states of electrodes. In the case of a single quantum dot the coupling, for a given quantum state, is constant or can be slightly modified by additional gating. In this paper we consider a concentric dot–ring nanostructure (DRN) and show that its transport properties can be drastically modified due to the unique geometry. We calculate the dc current through a DRN in the Coulomb blockade regime and show that it can efficiently work as a single-electron transistor (SET) or a current rectifier. In both cases the transport characteristics strongly depend on the details of the confinement potential. The calculations are carried out for low and high bias regime, the latter being especially interesting in the context of current rectification due to fast relaxation processes.

All-Graphene Three-Terminal-Junction Field-Effect Devices as Rectifiers and Inverters.

We present prominent tunable and switchable room-temperature rectification performed at 100 kHz ac input utilizing micrometer-scale three-terminal junction field-effect devices. Monolayer CVD graphene is used as both a channel and a gate electrode to achieve all-graphene thin-film structure. Instead of ballistic theory, we explain the rectification characteristics through an electric-field capacitive model based on self-gating in the high source-drain bias regime. Previously, nanoscale graphene three-terminal junctions with the ballistic (or quasi-ballistic) operation have shown rectifications with relatively low efficiency. Compared to strict nanoscale requirements of ballistic devices, diffusive operation gives more freedom in design and fabrication, which we have exploited in the cascading device architecture. This is a significant step for all-graphene thin-film devices for integrated monolithic graphene circuits.

Enhanced heat rectification effect in a quantum dot connected to ferromagnetic leads

We study theoretically the heat generation by electric current in an interacting single level quantum-dot connected to ferromagnetic leads. The heat is transferred between the dot and the lattice vibration of its host material (phonon reservoir). Particular attention is paid on the heat's rectification effect achieved by properly arranging the dot level and the bias voltage. We find that this effect is remarkably enhanced when the two leads' magnetic moments are in antiparallel configuration, i.e., the magnitude of the heat generation is reduced (amplified) in the negative (positive) bias regime as compared to the cases of parallel configuration and nonmagnetic leads. The rectification effect is even enhanced when one of the lead's spin polarization approaches to unit, during which the negative differential of the heat generation is weakened due to the change of the spin-dependent electron occupation numbers on the dot. The found results may be used for thermal transistor in the newly emerged research subject of phononics.

Temperature dependence of terahertz emission by an asymmetric intrinsic Josephson junction device

This study investigates the effect of temperature on the emission frequency of an intrinsic Josephson junction terahertz (THz) electromagnetic wave source, which can be used for high-speed communications by THz carrier wave. The characteristic emission features of two device types (asymmetric and symmetric) and two bias regimes (low and high) were determined. The bias-dependent emission frequency was temperature dependent in the asymmetric device, most likely reflecting the temperature-dependent London penetration depth. The bias tunability of the emission frequency can be explained by device self-heating, which significantly and inhomogeneously raises the temperatures of the device from its bath temperature. These findings are consistent with previous studies of temperature distribution in these devices.