Low temperature STM techniques are applied to study statistical properties of the BiO plane in 2212 high- T c single crystals. The correlation functions of height deviations in x and k spaces have been numerically obtained. Long range power law correlations have been found and attributed to half lattice cell jumps of known height in the c direction. Theoretical analysis of the correlation function resulting, from the assumption that the jumps on the surface are formed by two oppositely charged partial screw dislocations, gives very good agreement with the experimentally found behavior.
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