Bi Films Research Articles

Preferential Stripping Analysis of Post-Transition Metals (In and Ga) at Bi/Hg Films Electroplated on Graphene-Functionalized Graphite Rods

In this study, we introduce a novel electrochemical sensor combining reduced graphene oxide (rGO) sheets with a bismuth–mercury (Bi/Hg) film, electroplated onto pencil graphite electrodes (PGEs) for the high-sensitivity detection of trace amounts of gallium (Ga3+) and indium (In3+) in water samples using square wave anodic stripping voltammetry (SWASV). The electrochemical modification of PGEs with rGO and bimetallic Bi/Hg films (ERGO-Bi/HgF-PGE) exhibited synergistic effects, enhancing the oxidation signals of Ga and In. Graphene oxide (GO) was accumulated onto PGEs and reduced through cyclic reduction. Key parameters influencing the electroanalytical performance, such as deposition potential, deposition time, and pH, were systematically optimized. The improved adsorption of Ga3+ and In3+ ions at the Bi/Hg films on the graphene-functionalized electrodes during the preconcentration step significantly enhanced sensitivity, achieving detection limits of 2.53 nmol L−1 for Ga3+ and 7.27 nmol L−1 for In3+. The preferential accumulation of each post-transition metal, used in transparent displays, to form fused alloys at Bi and Hg films, respectively, is highlighted. The sensor demonstrated effective quantification of Ga3+ and In3+ in tap water, with detection capabilities well below the USEPA guidelines. This study pioneers the use of bimetallic films to selectively and simultaneously detect the post-transition metals In3+ and Ga3+, highlighting the role of graphene functionalization in augmenting metal film accumulation on cost-effective graphite rods. Additionally, the combined synergistic effects of Bi/Hg and graphene functionalization have been explored for the first time, offering promising implications for environmental analysis and water quality monitoring.

Optimizing thermoelectric transport through composite deposition of C-axis oriented interpolated multilayer bismuth films

Electron transport of low-dimensional materials is significantly influenced by both their orientation and grain size. Deposition energy can be used to tune grain size and orientation. Since the deposition energies of magnetron sputtering and thermal evaporation are different, multi-layer Bi films were prepared with different thicknesses of sputtering layer and evaporating layer. The c-axis oriented layer within a certain thickness can prevent the grain overgrowth along to the direction of film growth. This layer grown by thermal evaporation leads to the low-angle grain boundaries between grains. Carrier transport layer was introduced in this layer with low-angle grain boundaries. Importantly, it improves output power through increasing of ∆T.

Transformation Dynamics of Nanosized Bi Films into Semiconductor Films of Bismuth Oxide in the Cold Plasma Device

This work proposes an original method that reveals the transformation dynamics of nanosized Bi films into semiconductor films of bismuth oxide (Bi2O3) and the factors affecting the low‐energy cold plasma on the electro‐optical properties of Bi2O3. In the plasma microreactor with a photosensitive GaAs:Cr electrode, the transformed Bi films 400–1100 nm thick are analyzed by X‐ray diffraction to determine the crystal structure of Bi2O3 and by an electron probe microanalyzer to explore the evolution of the composition. The morphological properties of the Bi films exposed to electron–ion flow are examined by processing the scanning electron microscope images. It is found that as a result of the combined effect of photoactive illumination, charged particles, and active plasma components: 1) an absorption spectrum of a new substance is formed in the range λ = 330–1100 nm; 2) the optical width of the bandgap of the resulting substance is Eg ≈ 3 eV, which satisfactorily coincides with the width of the bandgap of Bi2O3; and 3) to overcome the potential barrier and formation of semiconducting Bi2O3 film energy is required, which is provided by the combined kinetic energy of electrons and negatively charged oxygen ions bombarding on the Bi film.

Growth Characteristics and Orientation Tuning of Superconducting Thin Films of Bi2212 Based on Substrate Orientation

Growth Characteristics and Orientation Tuning of Superconducting Thin Films of Bi2212 Based on Substrate Orientation

Enhanced transport anisotropy of Bi film through carrier mobility modulation controlled by calcium metal

Ca-doped Bi films were fabricated on the glass substrate using the molecular beam epitaxy (MBE). The systematic evolution for the preferred orientation, transport properties and surface morphology of Bi films were observed in the change of doping content. The measurement results show the adjustability of the preferred orientated surface morphology and Bi film carrier mobility. As the doping content increases, the mobility ratio four-fold and increases the anisotropy. Transport measurement simplifies the characteristic analysis of topological quantum materials. This work controls the material quantum property by doping Ca using MBE, which extends the potential application of quantum anomalous Hall effect-based devices.

Hot probe technique for thin films Seebeck coefficient measurement

A new experimental method using a 50 μm diameter hand fabricated hot probe of Pt90/10Rh alloy is proposed as a tool to measure the Seebeck coefficient of thin films deposited onto electrically insulated substrates. A thermal model for heat transfer inside the probe and to the sample was developed to simulate the corresponding temperature distributions. Simulations showed that the ratio of the temperature rise in the contact point to the average temperature of the probe evolves basically independent on electrical current and film-substrate properties. Moreover, the values of contact radius and thermal contact resistance should not be necessary known, but only the pairs which are best fitting the probe thermal resistance in contact with the film-substrate. This brings a great simplification in respect with certain AFM based hot probe methods for which is necessary to determine these two parameters by calibration of the two substrates with known thermal conductivity. The values can be further used to evaluate the Seebeck coefficient of the sample with a macroscopic probe, within 1 % precision. By variance to the classical measuring methods, which resort to a heater-heat sink ensemble instrumented with thermocouples, heated metallic rods with built-in thermocouples or microfabricated structures, the proposed method is fast, reliable and of higher spatial resolution. The method was validated by measuring the Seebeck coefficient on CdS, Bi and Cr thin films reference samples, respectively.

‘I bet you like looking at that asshole, dontcha?’: Jeff Stryker’s enigmatic sexuality

ABSTRACT Jeff Stryker, impossibly endowed, bulging with muscles, foul-mouthed, and unquestionably masculine, remains an enigmatic porn icon whose legend persists some 35 years after he first growled his way on screen. Stryker appeared primarily in gay male porn, where his level of stardom has never been surpassed. Yet, for all this, he is rarely discussed in connection with non-binary and bisexuality, his bi films are dismissed as gay or part of a failed fad, and he is typically regarded as the epitome of the ‘gay for pay’, non-reciprocal, emotionless porn star so ubiquitous in a post-HIV era infused with fear, shame, and self-loathing. This article aims to resituate Stryker as a trailblazer in the harnessing and subversion of porn categorization at a critical moment in US history, an important lens through which we might better understand porn stardom and the performance of masculinity and desire.

Synthesis of α-Bi/SrTiO3 heterostructure through the Eu-induced reduction of Bi2O2Se/SrTiO3

Thin Bi films, especially noncentrosymmetric α-phase Bi films (α-Bi), have attracted considerable attention in recent years due to their intriguing physical properties such as ferroelectricity, nonlinear optical response, and coherent spin transport. However, the current experimental preparation of α-Bi films still presents substantial challenges, resulting in only isolated α-Bi islands being achieved. In this study, α-Bi/SrTiO3 (α-Bi/STO) was synthesized from a Bi2O2Se/STO (BOS/STO) heterostructure by depositing a Eu layer and reducing a BOS film. The so-formed α-Bi/STO interface features metallic conductivity with electron mobility of 7.7 × 104 cm2/V s and ultralow resistivity of 1 nΩ cm at 2 K, as well as high residual resistance ratios R300 K/R2 K up to 2353. Furthermore, we observed a complex weak antilocalization–weak localization–weak antilocalization crossover with increasing magnetic field at temperatures below 10 K. Our work presents the synthesis of α-Bi films, which could potentially serve as a valuable platform for experimental validation of diverse theoretical predictions associated with α-Bi heterostructures. Furthermore, this special synthesis method provides valuable insights into the preparation of other metastable films.

Microcalorimeter Absorber Optimization for ATHENA and LEM

High quantum efficiency (QE) X-ray absorbers are needed for future X-ray astrophysics telescopes. The Advanced Telescope for High ENergy Astrophysics (ATHENA) mission requirements for the X-ray Integral Field Unit (X-IFU) instrument dictate, at their most stringent, that the absorber achieve vertical QE > 90.6% at 7 keV and low total heat capacity, 0.731 pJ/K. The absorber we have designed is 313 µm square composed of 1.05 μm Au and 5.51 μm electroplated Bi films (Barret et al. in Exp Astron 55:373–426, 2023). Overhanging the TES, the absorber is mechanically supported by 6 small legs whose 5 μm diameter is tuned to the target thermal conductance for the device. Further requirements for the absorber for X-IFU include a > 40% reflectance at wavelengths from 1 to 20 μm to reduce shot noise from infrared radiation from higher temperature stages in the cryostat. We meet this requirement by capping our absorbers with an evaporated Ti/Au thin film. Additionally, narrow gaps between absorbers are required for high fill fraction, as well as low levels of fine particulate remaining on the substrate and zero shorts between absorbers that may cause thermal crosstalk. The Light Element Mapper (LEM) is an X-ray probe concept optimized to explore the soft X-ray emission from 0.2 to 2.0 keV. These pixels for LEM require high residual resistance ratio (RRR) thin 0.5 µm Au absorbers to thermalize uniformly and narrow < 2 μm gaps between pixels for high areal fill fraction. This paper reports upon technology developments required to successfully yield arrays of pixels for both mission concepts and presents first testing results of devices with these new absorber recipes.

New perspective on the electrodeposition of Pb, Cd and Zn in electrode modified with bismuth film: A theoretical–experimental approach

Understanding electrode-analyte interactions at the atomic level is vital for improving analytical techniques, yet the complexity of these interactions poses a significant challenge for refinement.In this study, we investigate the detection of transition metals using Bi film electrodes, combining Density Functional Theory (DFT) simulations with experimental Anodic Stripping Voltammetry (ASV). Our experiments focus on the electrodeposition and detection of Zn2+, Cd2+, and Pb2+using Bi-modified carbon electrodes. The ASV experiments reveal a notably higher sensitivity for Pb2+detection compared to Zn2+and Cd2+, whether evaluated individually or simultaneously. DFT calculations demonstrate that the higher adsorption energy of Pb on the Bi surface promotes a uniform distribution of Pb atoms, resulting in a homogeneous phase. Conversely, Cd and Zn tend to present lower adsorption energies and form metallic clusters, leading to phase segregation. The correlation between theoretical and experimental data suggests that a more uniform deposition of Pb on the electrode surface facilitates a regular sweep in the redissolution step, achieving a detection limit as low as 0.062 nM for Pb. This synergistic approach not only enhances our understanding of electrode-analyte interactions but also provides valuable insights for optimizing electrode materials and detection methodologies in analytical chemistry.

Effect of electrophoretic deposition for selective detection of Pb2+ ions using nitrogen and sulphur-doped reduced graphene oxide

Lead is very hazardous, as it is present in environmental samples, and it causes severe health problems affecting neurological, cardiac, genital, and mental illnesses owing to exposure to even a trace amount. The achievement of selective detection of Pb2+ ions is challenging due to interfering relevant metal ions. Hence, in this work, we have synthesized the Nitrogen and Sulphur N and S-doped reduced graphene oxide (NS-rGO) and fabricated it using electrophoretic deposition (EPD) in glassy carbon electrode (GCE) and Bi film deposition (Bi/EPD-NS-rGO/GCE) for selective detection of Pb2+ ions. The synthesized materials were characterized to confirm their functionalities, elemental analysis, and morphology. Further, the electrochemical behaviours were also carried out through Cyclic Voltammetry (CV) and Electrochemical Impedimetric spectroscopy (EIS) studies. The above-modified electrodes were utilized for selective detection of Pb2+ in the presence of Cd2+ ionsusing the differential pulse anodic stripping voltammetry (DPASV) method. The electrode modified with NS-rGO using the EPD method, along with a thin film of Bi that was electrodeposited, has better and more selective catalytic activity for sensing Pb2+ ions. The linear working response was found to be in the range of 100–2200 nM with a limit of detection (LOD) of 0.180 nM and verified as 144 times lower than the recommended level (26 nM) by World Health Organization (WHO) and United States Environmental Protection Agency (USEPA). The developed sensor was further applied to the selective detection of Pb2+ ions in tap water and river water, and it shows good recovery. The Bi/EPD-NS-rGO/GCE will explore a new pathway for the simple and selective detection of Pb2+ ions.

Elemental topological ferroelectrics and polar metals of few-layer materials

Ferroelectricity can exist in elemental phases as a result of charge transfers between atoms occupying inequivalent Wyckoff positions. We investigate the emergence of ferroelectricity in two-dimensional elemental materials with buckled honeycomb lattices. Various multibilayer structures hosting ferroelectricity are designed by stacking engineering. Ferroelectric materials candidates formed by group IV and V elements are predicted theoretically. Ultrathin Bi films show layer-stacking-dependent physical properties of ferroelectricity, topology, and metallicity. The two-bilayer Bi film with a polar stacking sequence is found to be an elemental topological ferroelectric material. Three and four bilayers Bi films with polar structures are ferroelectriclike elemental polar metals with topological nontrivial edge states. For Ge and Sn, trivial elemental polar metals are predicted. Our work reveals the possibility of designing two-dimensional elemental topological ferroelectrics and polar metals by stacking engineering. Published by the American Physical Society 2024

Signal oscillations in helium scattering by bismuth atoms in the low energy range

Low Energy Ion Scattering (LEIS) analysis of bismuth selenide (Bi2Se3), a strong 3D topological insulator, revealed oscillations of the detected signal in dependence on primary ion beam energy. Bismuth is a part of the group of elements where oscillatory behaviour was already noticed, such as gallium, indium, or lead. Generally, it is ascribed to quasi-resonant charge exchange processes between primary ion and target atom. Moreover, clear differences exist between data for target atoms in elemental form and for atoms in compound form. A study of Bi signal yields in different material forms was performed for primary He+ projectiles within the energy range from 0.50 to 6.00 keV. A foil of pure Bi, Bi2Se3, Bi2O3 and thin Bi films deposited on several substrates (SiO2, CuOx) by Molecular Beam Epitaxy were analysed. The energy shift in the position of oscillations was observed when the oxygen atoms were present at the surface and bonded to Bi atoms. A description of the Bi ion yield variation is provided to facilitate the quantification process in LEIS.

Floquet engineering of axion and high-Chern number phases in a topological insulator under illumination

Quantum anomalous Hall, high-Chern number, and axion phases in topological insulators are characterized by its Chern invariant C (respectively, C=1, integer C&gt;1, and C=0 with half-quantized Hall conductance of opposite signs on top and bottom surfaces). They are of recent interest because of novel fundamental physics and prospective applications, but identifying and controlling these phases has been challenging in practice. Here we show that these states can be created and switched between in thin films of Bi_22Se_33 by Floquet engineering, using irradiation by circularly polarized light. We present the calculated phase diagrams of encountered topological phases in Bi_22Se_33, as a function of wavelength and amplitude of light, as well as sample thickness, after properly taking into account the penetration depth of light and the variation of the gap in the surface states. These findings open pathways towards energy-efficient optoelectronics, advanced sensing, quantum information processing and metrology.

Ultrasensitive detection of L-phenylalanine on DC magnetron sputtered bismuth thin films using label-free SERS method

Quantitative imbalances in monomers such as amino acids, nucleotides etc. act as biomarkers for various health conditions like cancer, Alzheimer’s, genetic disorders etc. Different atmospheric annealed bismuth (Bi) thin films deposited by DC magnetron sputtering were compared to select a better Surface Enhanced Raman Spectroscopy (SERS) platform. The tailored morphology favoured confining of localized surface plasmon resonance (LSPR) between close-packed Bi nanoparticles. The Multiple SPRs (Mult. SPRs) from interband plasmonic transitions are majorly present in the ultraviolet (UV)-near-visible region making the film a promising UV- SERS platform. The varied annealing’s have tuned the SPR and are supported by the colour changes of Bi films. The Raman modes confirmed the chemical stability the films. XPS etching revealed the metallic state of the optimized Bi-D-PDV2 film. The preliminary SERS applications on Rhodamine 6 G (RH6G) selected a Bi-D-PDV2 film with an enhancement factor (EF) of ∼4 ×105. This optimized film used for L-phenylalanine (Phe) detection, resulted in enhanced sensitivity of ∼2 ×106 EF with a sub-micromolar (0.1 μM) limit of detection (LOD). The ultra-sensitive responses in the sub-μM level from the optimized Bi thin film for standard as well as biomolecule is reported for the first time to the best extent of knowledge. The potential responses from the optimized film gives promising response for its use in ultra-sensitive bio detections even down to single molecular level in future.

Structure, ferroelectric, and enhanced fatigue properties of sol–gel-processed new Bi-based perovskite thin films of Bi(Cu1/2Ti1/2)O3–PbTiO3

Bi-based perovskite ferroelectric thin films have wide applications in electronic devices due to their excellent ferroelectric properties. New Bi-based perovskite thin films Bi(Cu1/2Ti1/2)O3–PbTiO3 (BCT–PT) are deposited on Pt(111)/Ti/SiO2/Si substrates in the present study by the traditional sol–gel method. Their structures and related ferroelectric and fatigue characteristics are studied in-depth. The BCT–PT thin films exhibit good crystallization within the phase-pure perovskite structure, besides, they have a predominant (100) orientation together with a dense and homogeneous microstructure. The remnant polarization (2P r) values at 30 μC/cm2 and 16 μC/cm2 are observed in 0.1BCT–0.9PT and 0.2BCT–0.8PT thin films, respectively. More intriguingly, although the polarization values are not so high, 0.2BCT–0.8PT thin films show outstanding polarization fatigue properties, with a high switchable polarization of 93.6% of the starting values after 108 cycles, indicating promising applications in ferroelectric memories.

Fabrication and characterization of Sn-57 wt% Bi film by pulse DC current co-electrodeposition and reflow

The electrodeposited Sn-Bi eutectic alloys can satisfy the need for micro-bumps with low melting point in 3D packaging. We deposited Sn-Bi film by pulse DC current in electroplating solutions based on methane sulfonic acid (MSA). The effects of MSA concentrations and pulse frequencies on morphology and composition of deposits were investigated. As the MSA concentration increased from 120 ml/L to 160 ml/L, the hydrogen evolution reaction weakened resulting in smoother deposited surfaces, and the Bi content decreased. In the use of pulses allowing deposits to become more uniform and denser, the Sn-56.73 wt% Bi film with smooth surfaces were fabricated at a pulse frequency of 4 Hz and an MSA concentration of 120 ml/L, of which melting point was 134.35 °C. By using transmission electron microscopy (TEM) and electron backscattered diffraction (EBSD), the structures were characterized more microscopically, which are essential for diffusion and electromigration of micro-bumps. The near-eutectic deposits, both before and after reflowing, consisted of uniformly distributed tetragonal β-Sn phases and hexagonal Bi phases, and the most preferred orientations after reflowing were the same as before reflowing, that were (220)//ND for β-Sn and (1̅012)//ND for Bi. The average grain sizes of Sn and Bi in the deposits after reflowing were 1.44 µm and 0.64 µm, respectively, which were much smaller than those of Sn58Bi alloy obtained by rapid solidification. Dislocations were observed in Sn grains and misorientation values in β-Sn phases were larger, which illustrated that the β-Sn phase carried larger strains. As evaluated by constant loading rate (CLR) nanoindentation tests, the hardness and modulus were significantly improved after reflowing, and creep stress indices of the deposits before and after reflowing were 51.74 and 7.07, respectively.

A modular table-top setup for ultrafast x-ray diffraction.

We present a table-top setup for femtosecond time-resolved x-ray diffraction based on a Cu Kα (8.05keV) laser driven plasma x-ray source. Due to its modular design, it provides high accessibility to its individual components (e.g., x-ray optics and sample environment). The Kα-yield of the source is optimized using a pre-pulse scheme. A magnifying multilayer x-ray mirror with Montel-Helios geometry is used to collect the emitted radiation, resulting in a quasi-collimated flux of more than 105 Cu Kα photons/pulse impinging on the sample under investigation at a repetition rate of 10Hz. A gas ionization chamber detector is placed right after the x-ray mirror and used for the normalization of the diffraction signals, enabling the measurement of relative signal changes of less than 1% even at the given low repetition rate. Time-resolved diffraction experiments on laser-excited epitaxial Bi films serve as an example to demonstrate the capabilities of the setup. The setup can also be used for Debye-Scherrer type measurements on poly-crystalline samples.

Emergence of quasi-1D spin-polarized states in ultrathin Bi films on InAs(111)A for spintronics applications.

The discovery, characterization, and control of heavy-fermion low-dimensional materials are central to nanoscience since quantum phenomena acquire an exotic and highly tunable character. In this work, through a variety of comprehensive experimental and theoretical techniques, it was observed and predicted that the synthesis of ultrathin Bi films on the InAs(111)A surface produces quasi-one-dimensional spin-polarized states, providing a platform for the realization of a unique spin-transport regime in the system. Scanning tunneling microscopy and low-energy electron diffraction measurements revealed that the InAs(111)A substrate facilitates the formation of the Bi-dimer phase of 2√3 × 3 periodicity with an admixture of the Bi-bilayer phase under submonolayer Bi deposition. X-ray photoelectron spectroscopy (XPS) measurements have shown the chemical stability of the Bi-induced phases, while spin and angle resolved photoemission spectroscopy (SARPES) observations combined with state-of-the-art DFT calculations have revealed that the electronic spectrum of the Bi-dimer phase holds a quasi-1D hole-like spin-split state at the Fermi level with advanced spin texture, whereas the Bi-bilayer phase demonstrates metallic states with large Rashba spin-splitting. The band structure of the Bi/InAs(111)A interface is discovered to hold great potential as a high-performance spintronics material fabricated in the ultimate two-dimensional limit.

Grain size effect on the transport properties of polycrystalline Bi(000l) films grown in MgO(001) and glass

The crystal growth and transport properties of the polycrystalline Bi(0001) films grown on MgO(001) and glass substrates were compared. The morphology and electron transport properties with different thickness have been analyzed. The stress-induced bandgap leads to the shift of transition temperature from semimetal to semiconductor transition. Compared with MgO(001) substrates, Bi(0001) thin films on glass substrates have the higher semimetal-semiconductor transition temperature. Furthermore, the electron transport performance is improved, which is attributed to the strain-free van-der-Waals epitaxial preferred orientation grown on the glass substrate. The strain effect on the transport performance is greater than that on in-plane grain boundaries.