Abstract
The crystal growth and transport properties of the polycrystalline Bi(0001) films grown on MgO(001) and glass substrates were compared. The morphology and electron transport properties with different thickness have been analyzed. The stress-induced bandgap leads to the shift of transition temperature from semimetal to semiconductor transition. Compared with MgO(001) substrates, Bi(0001) thin films on glass substrates have the higher semimetal-semiconductor transition temperature. Furthermore, the electron transport performance is improved, which is attributed to the strain-free van-der-Waals epitaxial preferred orientation grown on the glass substrate. The strain effect on the transport performance is greater than that on in-plane grain boundaries.
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