Berry Curvature Dipole Research Articles

Gate Modulation of Dissipationless Nonlinear Quantum Geometric Current in 2D Te.

Two-dimensional trigonal tellurium (2D Te), a narrow-bandgap semiconductor with a bandgap of approximately 0.3 eV, hosts Weyl points near the band edge and exhibits a narrow, strong Berry curvature dipole (BCD). By applying a back-gate bias to align the Fermi level with the BCD, a sharp increase in the dissipationless transverse nonlinear Hall response is observed in 2D Te. Gate modulation of the BCD demonstrates an on/off ratio of 104 and a responsivity of nearly 106 V/W, while the longitudinal current induced by band modulation reaches an on/off ratio of about 10. This current is sustained up to 200 K, exhibiting a change of 3 orders of magnitude. The inclusion of both transistor action and rectification enhances the temperature sensitivity of the dissipationless Hall current, offering potential applications in electrothermal detectors and sensors and highlighting the significance of topological properties in advancing electronic applications.

Nonlinear Electrical Transport Unveils Fermi Surface Malleability in a Moiré Heterostructure.

Van Hove singularities enhance many-body interactions and induce collective states of matter ranging from superconductivity to magnetism. In magic-angle twisted bilayer graphene, van Hove singularities appear at low energies and are malleable with density, leading to a sequence of Lifshitz transitions and resets observable in Hall measurements. However, without a magnetic field, linear transport measurements have limited sensitivity to the band's topology. Here, we utilize nonlinear longitudinal and transverse transport measurements to probe these unique features in twisted bilayer graphene at zero magnetic field. We demonstrate that the nonlinear responses, induced by the Berry curvature dipole and extrinsic scattering processes, intricately map the Fermi surface reconstructions at various fillings. Importantly, our experiments highlight the intrinsic connection of these features with the moiré bands. Beyond corroborating the insights from linear Hall measurements, our findings establish nonlinear transport as a pivotal tool for probing band topology and correlated phenomena.

Nonlinear Hall effect in isotropic k‐cubed Rashba model: Berry‐curvature‐dipole engineering by in‐plane magnetic field

The linear and nonlinear Hall effects in 2D electron gas are considered theoretically within the isotropic k‐cubed Rashba model. We show that the presence of an out‐of‐plane external magnetic field or net magnetization is a necessary condition to induce a nonzero Berry curvature in the system, whereas an in‐plane magnetic field tunes the Berry curvature leading to the Berry curvature dipole. Interestingly, in the linear response regime, the conductivity is dominated by the intrinsic component (Berry curvature component), whereas the second‐order correction to the Hall current (i.e., the conductivity proportional to the external electric field) is dominated by the component independent of the Berry curvature dipole.This article is protected by copyright. All rights reserved.

Experimental Evidence for a Berry Curvature Quadrupole in an Antiferromagnet

Berry curvature multipoles appearing in topological quantum materials have recently attracted much attention. Their presence can manifest in novel phenomena, such as nonlinear anomalous Hall effects (NLAHE). The notion of Berry curvature multipoles extends our understanding of Berry curvature effects on the material properties. Hence, research on this subject is of fundamental importance and may also enable future applications in energy harvesting and high-frequency technology. It was shown that a Berry curvature dipole can give rise to a second-order NLAHE in materials of low crystalline symmetry. Here, we demonstrate a fundamentally new mechanism for Berry curvature multipoles in antiferromagnets that are supported by the underlying magnetic symmetries. Carrying out electric transport measurements on the kagome antiferromagnet FeSn, we observe a third-order NLAHE, which appears as a transverse voltage response at the third harmonic frequency when a longitudinal ac drive is applied. Interestingly, this NLAHE is strongest at and above room temperature. We combine these measurements with a scaling law analysis, a symmetry analysis, model calculations, first-principle calculations, and magnetic Monte Carlo simulations to show that the observed NLAHE is induced by a Berry curvature quadrupole appearing in the spin-canted state of FeSn. At a practical level, our study establishes NLAHE as a sensitive probe of antiferromagnetic phase transitions in other materials—such as moiré superlattices, two-dimensional van der Waal magnets, and quantum spin liquid candidates, which remain poorly understood to date. More broadly, Berry curvature multipole effects are predicted to exist for 90 magnetic point groups. Hence, our work opens a new research area to study a variety of topological magnetic materials through nonlinear measurement protocols. Published by the American Physical Society 2024

2D perovskite Ca2Nb3O10 nanosheet featuring Berry curvature dipole and canted persistent spin texture reversible with in-plane ferroelectricity

Two-dimensional materials can result in rich and unique electronic features through symmetry breaking. A wide band gap 2D perovskite Ca2Nb3O10 (CNO) nanosheet is investigated for exotic electronic or spin-related properties using state-of-the-art first-principles calculations. The CNO nanosheet exhibits spontaneous in-plane ferroelectric polarization confined in the y direction owing to the low symmetry of the crystal structure. A canted persistent spin texture (PST) can be observed in spin-split bands, which depict a unidirectional spin configuration tilted along the yz-plane. A correlation between the canted PST and ferroelectricity has been found, as in-plane ferroelectric switching can successfully reverse the typical PST. The nonvanishing Berry curvature dipole (BCD) resulting from the interplay of spin–orbit coupling (SOC) and inversion symmetry breaking is also reversible with in-plane ferroelectric polarization. Therefore, the possibility of fully electrically adjustable canted PST and BCD in a 2D perovskite CNO nanosheet provides a pathway toward creating affordable, non-volatile spintronic devices.

Spin-orbit-splitting-driven nonlinear Hall effect in NbIrTe4

The Berry curvature dipole (BCD) serves as a one of the fundamental contributors to emergence of the nonlinear Hall effect (NLHE). Despite intense interest due to its potential for new technologies reaching beyond the quantum efficiency limit, the interplay between BCD and NLHE has been barely understood yet in the absence of a systematic study on the electronic band structure. Here, we report NLHE realized in NbIrTe4 that persists above room temperature coupled with a sign change in the Hall conductivity at 150 K. First-principles calculations combined with angle-resolved photoemission spectroscopy (ARPES) measurements show that BCD tuned by the partial occupancy of spin-orbit split bands via temperature is responsible for the temperature-dependent NLHE. Our findings highlight the correlation between BCD and the electronic band structure, providing a viable route to create and engineer the non-trivial Hall effect by tuning the geometric properties of quasiparticles in transition-metal chalcogen compounds.

Effective Manipulation of a Colossal Second-Order Transverse Response in an Electric-Field-Tunable Graphene Moiré System.

The second-order nonlinear transport illuminates a frequency-doubling response emerging in quantum materials with a broken inversion symmetry. The two principal driving mechanisms, the Berry curvature dipole and the skew scattering, reflect various information including ground-state symmetries, band dispersions, and topology of electronic wave functions. However, effective manipulation of them in a single system has been lacking, hindering the pursuit of strong responses. Here, we report on the effective manipulation of the two mechanisms in a single graphene moiré superlattice, AB-BA stacked twisted double bilayer graphene. Most saliently, by virtue of the high tunability of moiré band structures and scattering rates, a record-high second-order transverse conductivity ∼ 510 μm S V-1 is observed, which is orders of magnitude higher than any reported values in the literature. Our findings establish the potential of electrically tunable graphene moiré systems for nonlinear transport manipulations and applications.

Tuning of Berry-curvature dipole in TaAs slabs: An effective route to enhance the nonlinear Hall response

Tuning of Berry-curvature dipole in TaAs slabs: An effective route to enhance the nonlinear Hall response

Helicity-Sensitive Terahertz Detection in Monolayer 1T'-WTe2.

Valleytronics, identified as electronic properties of the energy band extrema in momentum space, has been intensively revived following the emergence of two-dimensional transition metal dichalcogenides (TMDCs) as their valley information can be controlled and probed through the spin angular momentum of light. Previous optical investigations of valleytronics have been limited to the visible/near-infrared spectral regime through which the carriers of most TMDCs can be excited. Monolayer 1T'-WTe2 with broken time-reversal symmetry provides a fertile platform to study the long-wavelength photonic properties in different valleys. Here, we employed a circularly polarized terahertz (THz) laser to selectively excite the valley of monolayer 1T'-WTe2 and demonstrate that the helicity-dependent photoresponse is generated via the photogalvanic effect (PGE). We also observed that the photocurrent is controlled by circular polarization and the external electric field. Because of the tunable Berry curvature dipole derived from the nontrivial wave functions near the inverted gap edge in monolayer WTe2, the bandgap can be tuned efficiently. Our results provide a versatile venue for controlling, detecting, and processing valleytronics and applications in on-chip THz imaging and quantum information processing.

Stabilizing Phosphorene‐Like Group IV–VI Compounds via van der Waals Imprinting for Multistate Ferroelectricity and Tunable Spin Transport

AbstractLayered group IV–VI compounds (i.e., SnSe, SnS, GeSe, and GeS) in the puckered structure resembling black‐phosphorene (BlackP) have attracted increasing interest because of their intriguing ferroic orders and outstanding thermoelectric properties. By invoking the guiding principles of isovalency and isomorphism for promoting van der Waals epitaxy, and based on comprehensive first‐principles calculations, here it is shown that the typically metastable BlackP‐like GeTe can be readily stabilized on the (001) surface of isostructural SnSe. Importantly, the ferroelectricity of such a BlackP‐like GeTe monolayer can be substantially enhanced compared to the freestanding state, due to the substrate enlarged in‐plane polar displacements. The GeTe/SnSe heterobilayer exhibits multiple ferroelectric/ferrielectric polarization states, which can be exploited for high‐density memory devices. These mutually switchable polarization states are also shown to be internally locked with the spin polarization of the valence/conduction bands with pronounced Rashba spin‐orbit splitting and Berry curvature dipole. These findings highlight the intuitive yet enabling power of van der Waals imprinting in growing novel 2D materials for enriched functionalities.

Defect-induced helicity dependent terahertz emission in Dirac semimetal PtTe2 thin films

Nonlinear transport enabled by symmetry breaking in quantum materials has aroused considerable interest in condensed matter physics and interdisciplinary electronics. However, achieving a nonlinear optical response in centrosymmetric Dirac semimetals via defect engineering has remained a challenge. Here, we observe the helicity dependent terahertz emission in Dirac semimetal PtTe2 thin films via the circular photogalvanic effect under normal incidence. This is activated by a controllable out-of-plane Te-vacancy defect gradient, which we unambiguously evidence with electron ptychography. The defect gradient lowers the symmetry, which not only induces the band spin splitting but also generates the giant Berry curvature dipole responsible for the circular photogalvanic effect. We demonstrate that the THz emission can be manipulated by the Te-vacancy defect concentration. Furthermore, the temperature evolution of the THz emission features a minimum in the THz amplitude due to carrier compensation. Our work provides a universal strategy for symmetry breaking in centrosymmetric Dirac materials for efficient nonlinear transport.

Real space characterization of nonlinear hall effect in confined directions

The nonlinear Hall effect (NLHE) is a phenomenon which could produce a transverse Hall voltage in a time-reversal-invariant material. Here, we report the real space characterizations of NLHE evaluated through quantum transport in TaIrTe4 nanoribbon without the explicit Berry curvature dipole (BCD) information. We first characterize the NLHE in both transverse confined directions in global-level measurement. The impact of quantum confinement in NLHE is evaluated by adjusting the width of nanoribbons. Then, the probing area is trimmed to the atomic scale to evaluate the local texture, where we discover its patterns differ among the probed neighboring atomic groups. The analysis of charge distribution reveals the connections between NLHE’s local patterns and its non-centrosymmetric nature, rendering nearly an order of Hall voltage enhancement through probe positioning. Our work paves the way to expand the range of NLHE study and unveil its physics in more versatile material systems.

Berry curvature dipole in bilayer graphene with interlayer sliding

Berry curvature dipole in bilayer graphene with interlayer sliding

Room temperature ferroelectricity and an electrically tunable Berry curvature dipole in III-V monolayers.

Two-dimensional ferroelectric monolayers are promising candidates for compact memory devices and flexible electronics. Here, through first-principles calculations, we predict room temperature ferroelectricity in AB-type monolayers comprising group III (A = Al, In, Ga) and group V (B = As, P, Sb) elements. We show that their spontaneous polarization, oriented out-of-plane, ranges from 9.48 to 13.96 pC m-1, outperforming most known 2D ferroelectrics. We demonstrate an electric field tunable Berry curvature dipole and nonlinear Hall current in these monolayers. Additionally, we highlight their applicability in next-generation memory devices by forming efficient ferroelectric tunnel junctions, especially in InP, which supports high tunneling electroresistance. Our findings motivate further exploration of these monolayers for studying the interplay between the Berry curvature and ferroelectricity and for integrating these ferroelectric monolayers in next-generation electronic devices.

Berry curvature dipole and its strain engineering in layered phosphorene

The emergence of the fascinating non-linear Hall effect intrinsically depends on the non-zero value of the Berry curvature dipole. In this work, we predict that suitable strain engineering in layered van der Waals material phosphorene can give rise to a significantly large Berry curvature dipole. Using symmetry design principles, and a combination of feasible strain and staggered on-site potentials, we show how a substantial Berry curvature dipole may be engineered at the Fermi level. We discover that monolayer phosphorene exhibits the most intense Berry curvature dipole peak near 11.8% strain, which is also a critical point for the topological phase transition in pristine phosphorene. Furthermore, we have shown that the necessary strain value to achieve substantial Berry curvature dipole can be reduced by increasing the number of layers. We have revealed that strain in these van der Waals systems not only alters the magnitude of Berry curvature dipole to a significant value but allows control over its sign. We are hopeful that our predictions will pave way to realize the non-linear Hall effect in such elemental van der Waals systems.

Berry Curvature Dipole Induced Giant Mid-Infrared Second-Harmonic Generation in 2D Weyl Semiconductor.

Due to its inversion-broken triple helix structure and the nature of Weyl semiconductor, 2D Tellurene (2D Te) is promising to possess a strong nonlinear optical response in the infrared region, which is rarely reported in 2D materials. Here, a giant nonlinear infrared response induced by large Berry curvature dipole (BCD) is demonstrated in the Weyl semiconductor 2D Te. Ultrahigh second-harmonic generation response is acquired from 2D Te with a large second-order nonlinear optical susceptibility (χ(2) ), which is up to 23.3 times higher than that of monolayer MoS2 in the range of 700-1500nm. Notably, distinct from other 2D nonlinear semiconductors, χ(2) of 2D Te increases extraordinarily with increasing wavelength and reaches up to 5.58nmV-1 at ≈2300nm, which is the best infrared performance among the reported 2D nonlinear materials. Large χ(2) of 2D Te also enables the high-intensity sum-frequency generation with an ultralow continuous-wave (CW) pump power. Theoretical calculations reveal that the exceptional performance is attributed to the presence of large BCD located at the Weyl points of 2D Te. These results unravel a new linkage between Weyl semiconductor and strong optical nonlinear responses, rendering 2D Te a competitive candidate for highly efficient nonlinear 2D semiconductors in the infrared region.

Intrinsic Nonlinear Hall Effect and Gate-Switchable Berry Curvature Sliding in Twisted Bilayer Graphene.

Though the observation of the quantum anomalous Hall effect and nonlocal transport response reveals nontrivial band topology governed by the Berry curvature in twisted bilayer graphene, some recent works reported nonlinear Hall signals in graphene superlattices that are caused by the extrinsic disorder scattering rather than the intrinsic Berry curvature dipole moment. In this Letter, we report a Berry curvature dipole induced intrinsic nonlinear Hall effect in high-quality twisted bilayer graphene devices. We also find that the application of the displacement field substantially changes the direction and amplitude of the nonlinear Hall voltages, as a result of a field-induced sliding of the Berry curvature hotspots. Our Letter not only proves that the Berry curvature dipole could play a dominant role in generating the intrinsic nonlinear Hall signal in graphene superlattices with low disorder densities, but also demonstrates twisted bilayer graphene to be a sensitive and fine-tunable platform for second harmonic generation and rectification.

Orientation-Dependent High-Order Harmonic Generation from Monolayer ZnO

Solid-state high-order harmonic generation (HHG) now is a strong tool for detecting target properties, like band structure, Berry curvature and transition dipole moments (TDMs). However, the physical mechanism of high-order harmonic generation (HHG) in solids has not been fully elucidated. According to previously published works, in addition to the inter-band polarization, intra-band currents, and anomalous currents due to Berry curvature, there is another term which will be called the mixture term (MT). Taking monolayer ZnO as a sample, it is found that the intensity of the mixture term, which has been ignored for a long time in previous works, actually is comparable with other terms. Additionally, we compare the orientation-dependent HHG spectra that originated from different mechanisms. It is found that the inter-band and mixture HHG show similar orientation features. Meanwhile, Berry curvature only produces perpendicularly polarized even harmonics, and intra-band perpendicularly polarized even harmonics show special orientation features which can be explained by the orientation-dependent group velocity. This work will help people understand the mechanisms of solid-HHG better.

PYATB: An efficient Python package for electronic structure calculations using ab initio tight-binding model

We present PYATB, a Python package designed for computing band structures and related properties of materials using the ab initio tight-binding Hamiltonian. The Hamiltonian is directly obtained after conducting self-consistent calculations with first-principles packages using numerical atomic orbital bases, such as ABACUS. The package comprises three modules: Bands, Geometric, and Optical. In the Bands module, one can calculate essential properties of band structures, including the partial density of states, fat bands, Fermi surfaces, and Weyl/Dirac points. The band unfolding method is utilized to obtain the energy band spectra of a supercell by projecting the electronic structure of the supercell onto the Brillouin zone of the primitive cell. With the Geometric module, one can compute the Berry phase and Berry curvature-related quantities, such as electric polarization, Wilson loops, Chern numbers, and anomalous Hall conductivities. The Optical module offers a range of optical property calculations, including optical conductivity and nonlinear optical responses, such as shift current and Berry curvature dipole. Program summaryProgram title: PYATBCPC Library link to program files:https://doi.org/10.17632/fsfpdy9t5r.1Developer's repository link:https://github.com/pyatb/pyatbCode Ocean capsule:https://codeocean.com/capsule/9408682Licensing provisions: GPLv3Programming language: C++, PythonNature of problem: This program is to study the electronic structure, electronic polarization, band topological properties, topological classification, linear and nonlinear optical response of solid crystal systems.Solution method: Based on the tight binding method to solve the band structure, the Wilson loop is used to classify the topological phases, and the optical response is calculated by Berry curvature and Berry connection.

Quantum kinetic theory of nonlinear thermal current

We investigate the second-order nonlinear electronic thermal transport induced by the temperature gradient. We develop the quantum kinetic theory framework to describe thermal transport in the presence of a temperature gradient. Using this, we predict an intrinsic scattering time-independent nonlinear thermal current in addition to the known extrinsic nonlinear Drude and Berry curvature dipole contributions. We show that the intrinsic thermal current is determined by the band geometric quantities and is nonzero only in systems in which both the space inversion and time-reversal symmetries are broken. We employ the developed theory to study the thermal response in tilted massive Dirac systems. We show that besides the different scattering time dependencies, the various current contributions have distinct temperature dependencies in the low-temperature limit. Our systematic and comprehensive theory for nonlinear thermal transport paves the way for future theoretical and experimental studies on intrinsic thermal responses.