The enhancement of power conversion efficiency (PCE) of perovskite solar cells (PSCs) is critically affected by charge recombination induced by buried interface defects. In light of this, a simple and effective target therapy strategy has been developed by doping 4-(diphenylphosphino)benzoic acid (4DBA) molecules at the tin oxide (SnO2)/perovskite interface. The effects of 4DBA on carrier transport, perovskite growth, defect passivation, and PSCs properties were systematically investigated. It is illustrated that 4DBA molecules not only passivate oxygen vacancy (OV) defects on the SnO2 surface, enhancing the conductivity of the SnO2 film and accelerating electron transfer, but also passivate perovskite interface defects, thereby improving the quality of the perovskite film. Ultimately, the efficiency of CsPbBr3 device with 4DBA-modified buried interface increased from 8.87% to 10.78%, an improvement of 21.53%. Furthermore, the efficiency of CsPbI2Br increased from 12.83% to 14.44%, an improvement of 12.55%, further demonstrating the effectiveness and universality of this strategy. Excitingly, the unencapsulated PSCs exhibit excellent long-term stability under high relative humidity and high temperatures.