The scattering of electrons and positrons with energy of 500 MeV on straight and bent silicon crystals has been considered using numerical simulations. The selected particle energy corresponds to parameters that can be achieved at the future multifunctional accelerator complex of the NSC “Kharkiv Institute of Physics and Technology”. It is shown that bent crystals, at certain orientations, allow deflecting charged particles at angles significantly exceeding the critical angle of axial channeling. It is also shown that experimental investigation of the effect of reducing inco- herent scattering of high-energy positrons when orienting the crystal relative to the direction of particle incidence near one of the main crystal axes is of interest.