Abstract
We present a quantitative experimental analysis of the radiation emission of 12.6 GeV electrons moving along and across the (111) planes of a strongly bent silicon crystal with a bending radius of 0.15 m. We have measured the radiation emitted during volume reflection, which has shown to strongly enhance the emission of low-energy photons, and a convincing agreement between simulations and experimental data is found.
Highlights
Radiation from electrons and positrons channeled in straight oriented single crystals has been studied in great detail over the past decades [1,2]
These studies have shown that radiation emission is enhanced considerably due to the coherent motion and the strong electric fields, which are of the order 1011 − 1013 V=m depending on the crystal material, orientation and lattice type
These studies show that particles undergo several different processes during penetration of a bent crystal: mainly channeling, curvature or multiple scattering dechanneling, volume capture (VC) and volume reflection (VR)
Summary
Radiation from electrons and positrons channeled in straight oriented single crystals has been studied in great detail over the past decades [1,2]. The motion of charged particles penetrating strongly bent crystals has been studied in great detail [3,4,5,6,7], but with little experimental emphasis on their radiation emission. By rotating the crystal we vary the incident angle of the electrons hitting the crystal, which enables a study of the radiation emitted from the different processes during passage through the crystal. This experiment serves as a more detailed study of the nature of VR radiation than previous studies, see: [8,9,10,11], which where all made at significantly higher and lower energies than this experiment
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