Abstract
This paper presents a detailed study of the deflection phenomena of a $400\text{ }\text{ }\mathrm{GeV}/c$ proton beam impinging on a new generation of bent silicon crystals; the tests have been performed at the CERN Super Proton Synchrotron H8 beam line. Channeling and volume reflection angles are measured with an extremely precise goniometer and with high resolution silicon microstrip detectors. Volume reflection has been observed and measured for the first time at this energy, with a single-pass efficiency as large as 98%, in good agreement with the simulation results. This efficiency makes volume reflection a possible candidate for collimation with bent crystals at the CERN Large Hadron Collider.
Highlights
Channeling [1] is the confinement between crystalline planes occurring when particles hit a crystal with a momentum nearly parallel to the atomic planes and a transverse kinetic energy not exceeding the well depth U0 of the crystal potential U x averaged over the crystallographic planes [Figs. 1(a) and 1(c)].When a particle enters a stable channeling condition, the critical angle1098-4402= 08=11(6)=063501(10)Phys
This paper presents a detailed study of the deflection phenomena of a 400 GeV=c proton beam impinging on a new generation of bent silicon crystals; the tests have been performed at the CERN Super Proton Synchrotron H8 beam line
This paper describes the analysis of the data collected by the H8-RD22 collaboration at the H8 external line of the CERN Super Proton Synchrotron (SPS) with 400 GeV=c protons interacting with different types of bent silicon crystals
Summary
Channeling [1] is the confinement between crystalline planes occurring when particles hit a crystal with a momentum nearly parallel to the atomic planes and a transverse kinetic energy not exceeding the well depth U0 of the crystal potential U x averaged over the crystallographic planes [Figs. 1(a) and 1(c)]. When a particle enters a stable channeling condition (i.e. it has a negligible probability of dechanneling as in the short crystals used in this data taking), the critical angle. The interplanar potential wells are preserved and the channeling remains effective [see Fig. 1(b)]; a channeled particle oscillates following the curvature, reaching a final deflection angle of l=R, where l is the crystal length and R the curvature radius. Em 6 GV=cm for (110) silicon gives RC 68 cm for 400 GeV=c protons. C is about 10 rad for 400 GeV=c protons on silicon. The deflection of channeled particles in bent crystals was intensively studied at circular accelerators. The record extraction efficiency of 85% has been obtained with a
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