Growth behavior and microstructure of oxide scales formed on WSi 2 coating by isothermal oxidation between 800 and 1300 °C were investigated. At and below 1000 °C, lamellar WO 3 embedded in the amorphous SiO 2 matrix was formed from the direct oxidation of WSi 2 by inward diffusion of oxygen through short-circuit paths. At the intermediate temperatures between 1100 and 1200 °C, fastest oxidation rate was observed. The oxide scale consisted of the spheroidal WO 3 particles embedded in the amorphous SiO 2 matrix. WSi 2 was initially oxidized to form W 5Si 3 and SiO 2 followed by the oxidation of W 5Si 3 to form WO 3 and SiO 2 phases. At 1300 °C, oxide scale consisted of continuous cristobalite SiO 2 and W 5Si 3 layer underneath, leading to the slowest isothermal oxidation behavior. It is concluded that the interplay of phase stability of WSi 2, defect formation process, and viscosity of SiO 2 gives rise to unique and complex oxidation behavior especially at intermediate temperatures.
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