Barrier Thickness Research Articles

20(R)-ginsenoside Rg3 Alleviates Diabetic Retinal Injury in T2DM Mice by Attenuating ROS-mediated ER Stress Through the Activation of the Nrf2/HO-1 Axis

BackgroundAlthough our previous work confirmed 20(R)-ginsenoside Rg3 (R-Rg3), which is an active ingredient in the Panax Ginseng C.A. Meyer, to have good anti-diabetic activity, its beneficial effect on diabetic retinal injury was found to be limited. PurposeThis study aims to investigate the protective effects of R-Rg3 on diabetes-induced retinal injury and the associated molecular mechanisms of action. MethodsDiabetic retinal injury was induced in mice using a combination of a high-fat diet (HFD) and intraperitoneal injection of streptozotocin (STZ). R-Rg3 (10 and 20 mg/kg) was subsequently administered for 6 weeks. The human retinal endothelial cells (HRECs) were subjected to high glucose (HG)-induced injury for the in vitro analysis and treated with R-Rg3 (4, 8, 16 μM), antioxidant N-Acetylcysteine (NAC, 1 mM) and Nrf2 inhibitor ML385 (5 μM). The mice retinas then underwent functional and histopathological analysis. Expression levels of proteins related to the Nrf2/HO-1 axis, tight junction proteins, endoplasmic reticulum (ER) stress and the apoptosis in retinal tissue and HRECs were determined by western blot. Expressions of ZO-1 and Nrf2 in the retina and HRECs were assessed by immunofluorescence. Additional evaluations included measuring body weights, fasting blood glucose (FBG), lipid levels and oxidative markers. ResultsThe results showed 6 weeks of R-Rg3 treatment significantly restored the functional changes and redox system imbalance that was induced by HFD/STZ in mice. R-Rg3 was also found to significantly reduce retinal barrier damage and thickness changes resulting from hyperglycaemia exposure. At the same time, R-Rg3 also protected HRECs from HG-induced damage. R-Rg3 could also activate Nrf2/HO-1 axis and inhibit endoplasmic reticulum stress as a means of alleviating retinal endothelial cells apoptosis. The molecular docking results also demonstrated that R-Rg3 had a good binding ability with Nrf2. ConclusionOur study suggested Nrf2/HO-1 axis might be crucial for the ability of R-Rg3 to prevent diabetic retinal injury.

Hypertension is associated with the reduction in epidermal small fibres independently of sural nerve inflammation in type 2 diabetic subjects.

Diabetic polyneuropathy (DPN) is a multifactorial disease associated not only with hyperglycaemia but also with circulatory disturbances such as hypertension. A close interaction between the immune system and hypertension is known. It remains unclear whether the inflammatory response is associated with hypertension in the pathology of human DPN. Autopsied patients were evaluated: 7 non-diabetic patients (nDM), 11 non-diabetic patients with hypertension (nDMHT), 6 patients with diabetes (DM) and 9 patients with hypertension and diabetes (DMHT). Intraepidermal nerve fibre density (IENFD) was examined by immunofluorescent staining. Dissected sural nerve (SNs) were morphometrically quantified. Dermal and endoneurial macrophage infiltration was evaluated by double immunostaining using anti-CD68 and anti-CD206 antibodies. IENFD was significantly decreased in DM compared to nDM (p < 0.05) and was further decreased in DMHT (p < 0.05). Myelinated nerve fibre density (MNFD) in the SN was significantly decreased in DM compared with nDM (p < 0.05) and further decreased in DMHT (p < 0.01 vs. DM). The infiltration of CD206-/CD68+ proinflammatory macrophages in the SN was significantly increased in DM compared to nDM (p < 0.05), whilst the number of CD206+/CD68+ anti-inflammatory macrophages was decreased in DM (p < 0.05). Hypertension had no impact on macrophage infiltration. The ratio of CD206- and CD206+ macrophage was negatively correlated with MNFD (r = 0.42, p < 0.05) but not IENFD (r = 0.30, p = 0.09). Dermal CD206+ macrophage infiltration was similar amongst all groups. Diabetes complicated by hypertension significantly increased the total diffusion barrier thickness (p < 0.01 vs. DM). Total diffusion barrier thickness was inversely correlated with both IENFD (r = -0.59, p < 0.01) and MNFD (r =-0.62, p < 0.01). Our results suggest that vascular factors and inflammation might be synergistically involved in pathological changes in human diabetic patients through different mechanisms.

Single-flux-quantum circuits utilizing self-shunted NbN/TaN/NbN Josephson junctions grown on silicon substrates

Abstract We report on the electrical properties of NbN/TaN/NbN Josephson junctions grown on thermally oxidized silicon substrates, along with the design and fabrication of superconducting single-flux-quantum (SFQ) circuits based on these NbN superconductor/normal metal/superconductor (SNS) junctions. The critical current density (J c) of the junctions was found to be relatively sensitive to the barrier thickness, decreasing from 108.0 ± 8.1 kA cm−2 for a 15 nm barrier to 12.8 ± 1.9 kA cm−2 for a 30 nm barrier. For a J c of approximately 24.5 ± 2.1 kA cm−2 and a barrier thickness of 25 nm, the NbN SNS junctions are self-shunted and exhibit nonhysteretic current–voltage (I–V) characteristics. Especially for junctions with diameter (φ) ranging from 0.8 to 1.6 μm, their critical current (I c) falls within the range of 110–450 μA, making them suitable for SFQ circuits. By considering the impact of excess current and incorporating it as an additional term in the conventional resistively and capacitively shunted junction model, the I–V curves of NbN SNS junctions can be precisely described, successfully minimizing the deviation between simulations and test results. The DC-SFQ and SFQ-DC interface circuits can both operate normally, and the bias margins of cell circuits such as Josephson transmission line, confluence buffer, D flip-flop, and splitter are greater than 40%. Compared to Nb superconductor/insulator/superconductor junctions, their self-shunting characteristics and relatively thick 25 nm barriers can also enhance the integration of circuits and increase the yield to complex circuits.

LG = 50 nm T-gated and Fe-doped double quantum well GaN‒HEMT on SiC wafer with graded AlGaN barrier for future power electronics applications

High-performance LG = 50 nm graded double-channel (GDC)-HEMT featuring AlN top barrier, recessed T-gate and graded-AlGaN bottom barrier is designed and investigated. Two quantum wells are formed in the AlN-GaN-graded AlGaN-GaN multilayer structure developed on a SiC substrate and the clear double hump feature of the transconductance (GM), cut-off frequency (fT), and capacitance plots clearly illustrates the double-channel (DC) behavior. The investigations carried out to explore the impact of barrier thickness (both AlN & graded-AlGaN) revealed superior performance with the GM showing two peaks at 181.5 & 488.1 mS/mm, the peak-drive-current (ID_peak) with VGS biased at 3 V is 1.81 A/mm, maximum saturation drain current of 3.08 A/mm (VGS = 3V), and the fT derived from the left- and right-hump are 263.7 GHz & 354.2 GHz, respectively, when both barriers are 6 nm thin, attributable to enhanced 2DEG density due to the coordination of channels because of proximity and lower leakage. It has been noticed that when the bottom barrier is thick, the DC behaviour is less obvious due to insufficient gate access to the lower channel. We investigated the impact of varying the Al % in AlGaN top barrier on the DC/RF performance of GDC-HEMTs, demonstrating enhanced performance with increased Al content, particularly for Al0.35Ga0.65N. By using various metals, this study also investigates how gate engineering affects the electrical characteristics of the GDC-HEMT. The lower ϕm (work function) of the Al-gate led to better DC/RF performance. When the Schottky barrier rises as a result of the conduction band edge being elevated, the performance reduces, and the threshold voltage (Vth) increases. Since it is essential to comprehend the role that source resistance (Rs) & drain resistance (Rd) play in RF design, we have also conducted simulations by varying the source-gate gap (LGS) & drain-gate gap (LGD). Due to low Rs & Rd, it was determined that the GDC-HEMT performed better at the smallest LGS & LGD. The extraordinary performance strongly highlights the immense potential and applicability of the GDC-HEMTs for future broadband power amplifiers.

A vibroacoustic model for low-frequency sound transmission loss in circular membranes with added strip mass

Noise control strategies involve physical barriers in the transmission path. Conventional barriers conform to the mass law which states an inverse relation between sound transmission, barrier mass, and incident frequency. Practical scenarios for low-frequency noise attenuation require prohibitively thick barriers making them infeasible. Mass-loaded membranes exhibit marked differences in their dynamic nature from that of bare membranes as they do not necessarily conform to the mass law. Being thin, compact, and lightweight makes them geometrically ideal for most applications. The paper presents an analytical model based on the Newtonian approach for the vibroacoustic behavior of a pre-stretched elastic circular membrane with rigidly attached strip mass under normal incidence. The point collocation approach distributes the effect of the strip mass on the membrane as a collection of discretized concentrated loads along the interfacial boundary resulting in a summation that is easier to solve. The peak and dip frequencies of sound transmission are determined for circular membranes with eccentric and central strip mass. The present study evaluates strip mass-loaded membranes' capability to attenuate noise at low frequencies as an unconventional physical barrier.

Effects of probiotics and fibers on markers of nephropathy, inflammation, intestinal barrier dysfunction and endothelial dysfunction in individuals with type 1 diabetes and albuminuria. The ProFOS Study

AimsTo estimate whether a mix of pre- and probiotics would strengthen the gut barrier and protect the kidneys in individuals with type 1 diabetes and albuminuria. MethodsRandomized, placebo-controlled, crossover study. Forty-one participants received synbiotic (pre- and probiotics) mix or placebo for 12 weeks with 6 weeks washout. Primary endpoint was change from baseline to end-of-period in UACR. Secondary endpoints were changes in endothelial glycocalyx thickness, inflammatory and intestinal barrier dysfunction markers, glomerular filtration rate (GFR) and ambulatory systolic blood pressure. ResultsThirty-five participants completed the study. Mean age was 58 (SD 10) years, 73 % (n = 30) were male, median UACR was 134 (IQR 63–293) mg/g, estimated GFR was 75 (30) ml/min/1.73m2. There was no significant difference in UACR with a mean relative change (CI 95 %) from baseline to end-of-treatment of −3.0 (−18.4; 15.5) % in the synbiotic group and −12.0 (−29.6; 9.6) % in the placebo group with no significant difference between treatment periods (9.37 (−25.2; 44.0) percentage points; p = 0.60). No significant beneficial difference in the secondary end points was demonstrated. ConclusionTwelve weeks treatment with synbiotic mix had no effect on UACR or on any of the secondary endpoints in subjects with type 1 diabetes and albuminuria.

Single-molecule Magnets (SMM) spin channels connecting FeMn antiferromagnet and NiFe ferromagnetic electrodes of a tunnel junction

The integration of single-molecule magnets (SMMs) into magnetic tunnel junctions (MTJs) offers significant potential for advancing molecular spintronics, particularly for next-generation memory devices, quantum computing, and energy storage technologies such as solar cells. In this study, we present the first demonstration of SMM-induced spin-dependent properties in an antiferromagnet-based MTJ molecular spintronic device (MTJMSD). We engineered cross-junction-shaped devices comprising FeMn/AlOx/NiFe MTJs. The AlOx barrier thickness where the exposed junction edges meet was comparable to the SMM length, facilitating the incorporation of SMM molecules as spin channels for spin-dependent transport. The SMM channels enabled long-range magnetic moment ordering around molecular junctions, which were precisely engineered via fabrication processes. The SMM, composed of a [Mn6(μ3-O)2(H2N-sao)6(6-atha)2(EtOH)6] (H2N-saoH = salicylamidoxime, 6-atha = 6-acetylthiohexanoate) complex, featured thioester groups at the ends that upon hydrolysis they form bonds with the magnetic electrodes. SMM-treated junctions demonstrated a significant current enhancement, reaching up to 7 μA at an input voltage of 60 mV. Furthermore, SMM-doped junctions exhibited current stabilization in the μA range at lower temperatures, whereas the bare electrodes showed current suppression to the picoampere range. Magnetization measurements conducted at 55 K and 300 K on pillar-shaped devices revealed a reduction in magnetic moment at low temperatures. Additionally, Kelvin probe atomic force microscopy (KPAFM) measurements confirmed that SMM integration transformed the electronic properties over long ranges.These findings are attributed to the spin channels formed between magnetic metal electrodes, which enhance spin polarization at each magnetic electrode. Our research highlights the potential of using antiferromagnetic materials, characterized by minimal stray fields and zero net magnetization, to transform MTJMSD devices.

Tunneling Barrier Thickness Dependence of Spin Polarization of Ferromagnet in Magnetic Tunnel Junctions

Abstract For designing low-impedance magnetic tunnel junctions (MTJs), it has been found that tunneling magnetoresistance strongly correlates with the insulating barrier thickness, imposing a fundamental problem about the relationship between spin polarization of ferromagnet and the insulating barrier thickness in MTJs. Here, we investigate the influence of alumina barrier thickness on tunneling spin polarization (TSP) through a combination of theoretical calculations and experimental verification. Our simulating results reveal a significant impact of barrier thickness on TSP, exhibiting an oscillating decay of TSP with the barrier layer thinning. Experimental verification is realized on FeNi/AlO x /Al superconducting tunnel junctions to directly probe the spin polarization of FeNi ferromagnet using Zeeman-split tunneling spectroscopy technique. These findings provide valuable insights for designs of high-performance spintronic devices, particularly in applications such as magnetic random access memories, where precise control over the insulating barrier layer is crucial.

Breaking Down the Bottlebrush: Atomically Detailed Structural Dynamics of Mucins.

Mucins, the biomolecular components of mucus, are glycoproteins that form a thick physical barrier at all tissue-air interfaces, forming a first line of defense against pathogens. Structural features of mucins and their interactions with other biomolecules remain largely unexplored due to the challenges associated with their high-resolution characterization. Combining limited mass spectrometry glycomics and protein sequencing data, we present all-atom, explicitly solvated molecular dynamics simulations of a major respiratory mucin, MUC5B. We detail key forces and degrees of freedom imposed by the extensive O-glycosylation, which imbue the canonically observed bottlebrush-like structures to these otherwise intrinsically disordered protein backbones. We compare our simulation results to static structures observed in recent scanning tunneling microscopy experiments as well as other published experimental efforts. Our work represents the demonstration of a workflow applied to a mucin example, which we hope will be employed by other groups to investigate the dynamics and interactions of other mucins, which can inform on structural details currently inaccessible to experimental techniques.

Improving photoelectrochemical performance of transferred TiO2 nanotubes onto FTO substrate with Mo2C and NiS as Co-catalyst

The photoelectrochemical (PEC) performance of titanium dioxide nanotube (TiO2 NT) photoelectrodes for sustainable hydrogen production has garnered significant research interest. Despite the advantages of TiO2 NT fabricated via anodization of titanium metal, such as their well-ordered vertical structure, challenges persist including the thick oxide barrier layer, limited optical transparancy, and the wide energy band gap (∼3.0 eV), which constrain their practical efficiency in PEC applications. This study addresses these limitations by introducing a novel approch to transfer TiO2 NT onto a fluorine-doped tin oxide (FTO) substrate. TiO2 NTs were synthesized with varying anodization times and steps to achieve optimal free-standing structures. To further enhance PEC performance, co-catalyst including molybdenum carbide (Mo2C) and nickel sulfide (NiS) were incorporated using immersion and successive ionic layer adsorption reaction (SILAR) methods, respectively. Comprehensive characterization using X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), ultraviolet–visible–near infrared (UV–Vis–NIR) spectroscopy, and X-ray photoelectron spectroscopy (XPS) provided insights into the crystal phase, morphological structure, band gap, and elemental composition of the photoelectrodes. Photoelectrochemical and photostability evaluations were conducted through linear scan voltammetry (LSV) and chronoamperometry under dark and light conditions. Results indicate that transferring TiO2 NTs onto FTO significantly enhanced photocurrent density, achieving a 2.5-fold increase at 0.7 V versus a TiO2 NT/Ti substrate. The incorporating of co-catalysts Mo2C, NiS and the combined NiS/Mo2C further enhanced the photocurrent density to 2.20, 3.00 and 8.00 mA cm−2 respectively, with a remarkable 31-fold enhancement compared to the TiO2 NT/Ti substrate. This findings underscore the potential of the TiO₂ NT/FTO photoelectrode with optimized co-catalyst integration for advanced photoelectrochemical applications.

Evaluating lead-free alternatives for radiation shielding in diagnostic radiology: a case study from a tertiary general hospital in Korea.

With the continued increase in the number of pieces of diagnostic medical radiography equipment being used, radiation shielding in radiology departments is becoming increasingly important. Lead is the most commonly used material for radiation protection; however, there are numerous disadvantages associated with the use of lead, including environmental hazards and harm to the human body. Alternative shielding materials that can be used as replacements include barium sulfate, tungsten, or bismuth. Among alternative materials, barium sulfate appears to be the most cost-effective and easiest to process. In the present study, before constructing shielding barriers, a barrier thickness program for lead-free barrier materials based on National Council on Radiation Protection and Measurements (NCRP) Report No. 147 was used to determine the appropriate barrier thickness. The required thickness for lead-free boards for each type of diagnostic radiography room was calculated based on a tertiary general hospital in the Republic of Korea.

Mechanical properties, thermal shock resistance and stress evolution of plasma-sprayed 56 wt% Y2O3-stabilized ZrO2 thick thermal barrier coatings

The mechanical properties and thermal shock resistance of plasma-sprayed 56 wt% Y2O3-stabilized ZrO2 thick thermal barrier coatings (TTBCs) deposited with different critical plasma spraying parameter (CPSP) values and its stress evolution were investigated. With the CPSP value increased from 0.83 kW·SLPM−1 to 1.17 kW·SLPM−1, the porosity was decreased from 14.62 ± 0.84 % to 7.00 ± 0.38 % while the bonding strength was increased from 7.82 ± 0.64 MPa to 9.95 ± 0.30 MPa. As a result, the hardness of the coating obtained from the cross-section was increased from 2.16 ± 0.61 GPa to 2.67 ± 0.82 GPa, and the elastic modulus was also increased from 60.47 ± 5.22 GPa to 71.93 ± 6.91 GPa. During thermal cycling test at 1000 °C, thermal cycling lifespan presented a decrease from (83 ± 3) cycles to (44 ± 3) cycles, and coating failure was mainly attributed to the occurrence of partial or whole spallation of the top coat. According to the stress simulation result, residual stress in the coating was accumulated while thermal stress was released with the increase of thermal cycles, and the increasing residual stress was the main failure driver for the coating.

Improvement of DC Performance and RF Characteristics in GaN-Based HEMTs Using SiNx Stress-Engineering Technique.

In this work, the DC performance and RF characteristics of GaN-based high-electron-mobility transistors (HEMTs) using the SiNx stress-engineered technique were systematically investigated. It was observed that a significant reduction in the peak electric field and an increase in the effective barrier thickness in the devices with compressive SiNx passivation contributed to the suppression of Fowler-Nordheim (FN) tunneling. As a result, the gate leakage decreased by more than an order of magnitude, and the breakdown voltage (BV) increased from 44 V to 84 V. Moreover, benefiting from enhanced gate control capability, the devices with compressive stress SiNx passivation showed improved peak transconductance from 315 mS/mm to 366 mS/mm, along with a higher cutoff frequency (ft) and maximum oscillation frequency (fmax) of 21.15 GHz and 35.66 GHz, respectively. Due to its enhanced frequency performance and improved pinch-off characteristics, the power performance of the devices with compressive stress SiNx passivation was markedly superior to that of the devices with stress-free SiNx passivation. These results confirm the substantial potential of the SiNx stress-engineered technique for high-frequency and high-output power applications, which are crucial for future communication systems.

Ferroelectric tunnel junctions based on a HfO2/dielectric composite barrier

The ferroelectric tunnel junction (FTJ), which possesses a simple structure, low power consumption, high operation speed, and nondestructive reading, has attracted great attention for the application of next-generation nonvolatile memory. The complementary metal–oxide–semiconductor-compatible hafnium oxide (HfO2) ferroelectric thin film found in the recent decade is promising for the scalability and industrialization of FTJs. However, the electric performance, such as the tunneling electroresistance (TER) effect, of the current HfO2-based FTJs is not very satisfactory. In this work, we propose a type of high-performance HfO2-based FTJ by utilizing a ferroelectric/dielectric composite barrier strategy. Using density functional theory calculations, we study the electronic and transport properties of the designed Ni/HfO2/MgS/Ni (001) FTJ and demonstrate that the introduction of an ultra-thin non-polar MgS layer facilitates the ferroelectric control of effective potential barrier thickness and leads to a significant TER effect. The OFF/ON resistance ratio of the designed FTJ is found to exceed 4 × 103 based on the transmission calculation. Such an enhanced performance is driven by the resonant tunneling effect of the ON state, which significantly increases transmission across the FTJ when the ferroelectric polarization of HfO2 is pointing to the non-polar layer due to the aroused electron accumulation at the HfO2/MgS interface. Our results provide significant insight for the understanding and development of the FTJs based on the HfO2 ferroelectric/non-polar composite barrier.

Simulation Analysis of Influence Laws of Sound Barrier Acoustic Performance When Using Ceramic as Sound-absorbing Materials

Abstract The excellent sound absorption performance of Sound Barrier which using Ceramic as Sound-absorbing Materials can be attributed to their corrosion resistance, lightweight nature, small particle size, and internal microporous structure. As a result, the application of new ceramic-based sound absorption materials in sound barriers is becoming increasingly widespread. To address the challenging issue of predicting the sound absorption and isolation performance of ceramic sound barriers and understanding the influencing factors on acoustic parameters, a simulation analysis method was employed for analyzing and studying various factors affecting the acoustic performance of these barriers. The calculation results demonstrate that increasing the thickness of both the sound absorption material and air layer behind exhibits similar effects on enhancing the sound absorption and isolation performance of ceramic acoustic barriers. Specifically, increasing either parameter leads to improved sound absorption performance by significantly increasing the sound absorption coefficient at 125Hz and 250Hz while decreasing it at 500Hz. However, in high-frequency bands above 1000Hz, structural parameters have minimal overall influence. Moreover, when keeping the thickness of ceramic sound absorption plates constant, every additional 20mm increase in air layer thickness behind results in a weighted increase in sound isolation by approximately 1dB; notable improvements are observed when this air layer thickness is below 1600Hz. When the thickness of the air layer behind is kept constant, an increase in the thickness of the sound absorption material by 10mm results in a 1dB increment in weighted sound isolation. However, when maintaining a total thickness of the sound barrier at 140mm, increasing the material’s thickness leads to a reduction in air layer thickness. Consequently, there is a slight enhancement in the sound absorption coefficient at frequencies of 125Hz and 250Hz while a minor decrease occurs at frequencies of 500Hz and 1000Hz. The impact on other frequency bands and overall sound absorption performance remains inconspicuous. Moreover, variations in weighted sound insulation quantity have minimal influence on sound insulation characteristics.

Development of Geotechnical Seismic Isolation System in the Form of Vertical Barriers: Effectiveness and Perspective

This paper discusses the concept of geotechnical seismic isolation (GSI) systems, characterized by new principles of action, to reduce seismic loads on buildings. The advantages and disadvantages of GSIs and their environmental and economic reliability are analyzed. The aim of the study is to develop a geotechnical seismic isolation system in the form of vertical barriers, using a rubber–soil mixture (RSM). The novelty of the work lies in the definition of effective structural and technical solutions of vertical seismic barriers made of RSM, characterized by reliability in providing seismic isolation. The ground and superstructure interactions are modeled in PLAXIS 2D software from 2021, using the finite element method, using the accelerogram of the Kobe and Northridge earthquakes. The results confirm the positive impact of using an RSM as an effective GSI geometrical. The results show that the GSI system using an RSM reduces horizontal accelerations by 60%. Significant acceleration reductions of 40–60% are also observed when the thickness and depth of GSI seismic barriers are increased. The results of the study contribute to the substantiation of methodology and scientific and technical efficiency of geotechnical seismic isolation as an economically favorable design alternative to the traditional seismic isolation system.

Mechanical Strain, Temperature, and Misalignment Effects on Data Communication between Piezoceramic Ultrasonic Transducers.

Acoustic waves can be used for wireless telemetry as an alternative to situations where electrical or optical penetrators are unsuitable. However, the response of the ultrasonic transducer can be greatly affected by temperature variations, mechanical deformations, misalignment between transducers, and multiple layers in the propagation zone. Therefore, this work sought to quantify such influences on communication between ultrasonic transducers. The experimental measurements were performed at the frequency where power transfer is maximized. Moreover, there were four experimental models, each with its own performed setup. The ultrasonic transducers are attached to both sides of a 6 mm thick stainless-steel plate for configuring just one barrier. Multiple layers of transducers are attached to the outer side of two plates immersed in an acoustic fluid with a 100 mm thick barrier. In both cases, the S21 parameter was used to quantify the influence of the physical barrier because it correlates with the power flow between ports that return after a given excitation. The results showed that when a maximum deformation of 1250 μm/m was applied, the amplitude of the S21 parameter varied around +0.7 dB. Furthermore, increasing the temperature from 30 to 100 °C slightly affected the S21 (+0.8 dB), but the signal decayed quickly for temperatures beyond 100 °C. Additionally, the ultrasonic communication with a multiple layer was found to occur under misalignment with an intersection area of up to 40%. None of the factors evaluated resulted in insufficient power transfer, except for a large misalignment between the transducers. Such results indicate that this type of communication can be a robust alternative, with a minimum alignment of 40% between transducers and electrical penetrators.

Sensitivity analysis of models of gas exchange for lung hyperpolarised 129Xe MR.

Sensitivity analysis enables the identification of influential parameters and the optimisation of model composition. Such methods have not previously been applied systematically to models describing hyperpolarised 129Xe gas exchange in the lung. Here, we evaluate the current 129Xe gas exchange models to assess their precision for identifying alterations in pulmonary vascular function and lung microstructure. We assess sensitivity using established univariate methods and scatter plots for parameter interactions. We apply them to the model described by Patz et al and the Model of Xenon Exchange (MOXE), examining their ability to measure: i) importance (rank), ii) temporal dependence and iii) interaction effects of each parameter across healthy and diseased ranges. The univariate methods and scatter plot analyses demonstrate consistently similar results for the importance of parameters common to both models evaluated. Alveolar surface area to volume ratio is identified as the parameter to which model signals are most sensitive. The alveolar-capillary barrier thickness is identified as a low-sensitivity parameter for the MOXE model. An acquisition window of at least 200 ms effectively demonstrates model sensitivity to most parameters. Scatter plots reveal interaction effects in both models, impacting output variability and sensitivity. Our sensitivity analysis ranks the parameters within the model described by Patz et al and within the MOXE model. The MOXE model shows low sensitivity to alveolar-capillary barrier thickness, highlighting the need for designing acquisition protocols optimised for the measurement of this parameter. The presence of parameter interaction effects highlights the requirement for care in interpreting model outputs.

Degradation of LaPO4-8YSZ composite thick thermal barrier coatings by molten calcium-magnesium-aluminosilicate

The effect of LaPO4 content on the calcium-magnesium-aluminosilicates (CMAS) corrosion resistance of the plasma-sprayed LaPO4-8YSZ composite coatings at 1250 °C was investigated. The microstructure and corrosion products of the LaPO4-8YSZ composite coatings after CMAS attack was determined by using SEM/TEM/SAED. The results indicated that LaPO4 was segregated at the grain boundaries of the composite coatings and the addition of LaPO4 into 8YSZ coating increased their CMAS reactivity, which led to the formation of planar reaction zone while the CMAS infiltration depth decreased from ∼658 μm to ∼119 μm. The CMAS infiltration depth of the composite coatings firstly increased with LaPO4 addition, reaching its maximum for the composite coating with 5 wt% LaPO4, and then showed a downtrend. For the composite coating with 20 wt% LaPO4, a dense apatite layer formed in the corrosion front, which inhibited CMAS penetration and resulted in the shallowest CMAS infiltration depth among the test samples.

Characterization and Control of Carbon Nanotube Doping

Carbon nanotube FETs show great promise for beyond-Si and monolithic 3D electronics, however there are still fundamental questions to explore. In particular, controlled N- and P- doping is a fundamental process module which can be used to engineer semiconductor resistance in un-gated regions such as the contact or extension, as well as optimize band-to-band tunneling leakage [1-4]. To-date both N- and P- doping has been demonstrated for CNT, but the optimal strategies for doping control and carrier density quantification have not been determined. In this work, we present a study of N- and P- doping using solid-state dopants and doping control strategy using a dielectric barrier of tunable thickness. A TCAD evaluation reveals the tradeoffs between carrier density and mobility for increasing dielectric barrier thickness, and reveals the critical role of dielectric constant in optimizing performance of spacer doping [5]. Multiple characterization approaches under evaluation help to correlate doping strength to experimentally measurable quantities with insight into the doping mechanisms. Finally, we will summarize potential approaches for improving doping control and quantification, and progress towards integration of the doping in highly-scaled high-performance carbon nanotube FETs [6].[1] Z. Zhang, et al., “Complementary carbon nanotube metal-oxide-semiconductor field-effect transistors with localized solid-state extension doping,” Nature Electronics, 2023.[2] Q. Lin, et al., “Band-to-band Tunneling Leakage Current Characterization and Projection in Carbon Nanotube Transistors,” ACS Nano, 2023.[3] G. Zeevi, et al., “PN Junction and band to band tunneling in carbon nanotube transistors at room temperature,” Nanotechnology, 2021.[4] L. Liyanage, et al., “VLSI-compatible carbon nanotube doping technique with low work-function metal oxides,” Nano Letters, 2014.[5] C. Gilardi et al., “Barrier Booster for Remote Extension Doping and its DTCO for 1D & 2D FETs”, IEDM 2023[6] S.Li, et al., “High-performance and low parasitic capacitance CNT MOSFET: 1.2 mA/μm at VDS of 0.75 V by self-aligned doping in sub-20 nm spacer,” IEDM 2023.