Barrier Layer Research Articles

Effect of copper in the stabilization of Al/CuO energetic semiconductor bridge

The long-term storage performance of energetic multilayer nanofilms is of great significance for their applications. In this paper, it is proposed to add a 10 nm Cu barrier layer between Al/CuO composite films to increase their storage stability. The Al/CuO composite film and Al/Cu/CuO composite film were aged for 14 days in an environment with a relative humidity of 40% and a temperature of 71 °C. Scanning electron microscopy and differential scanning calorimetry were used to analyze the microstructure and thermodynamic properties of the energetic films before and after aging, and the electrical detonation performance and ignition ability of energy-containing semiconductor bridges were studied. The results indicate that after aging for 14 days in an environment with a relative humidity of 40% and a temperature of 71 °C, the Al layer of the Al/CuO composite film becomes thinner, the Al2O3 interface layer increases, and the heat release decreases. The interlayer microstructure of the Al/Cu/CuO energetic multilayer nanofilms did not change significantly, and the addition of a 10 nm Cu layer formed a low-temperature Al–Cu alloy, reducing the reaction initiation temperature from 626 to 570 °C. The critical ignition time and critical ignition energy of the Al/CuO-energetic semiconductor bridge (ESCB) increased, the flame duration shortened from 440 to 300 μs, the flame size decreased by 50%, the plasma temperature decreased, and aging had no significant effect on the electrical explosion performance of Al/Cu/CuO-ESCB. After aging for 14 days in an environment with a relative humidity of 40% and a temperature of 71 °C, the maximum ignition gap of B/KNO3 for Al/CuO-ESCB decreased from 1.4 to 1.2 mm, while the maximum ignition gap for Al/Cu/CuO-ESCB remained at 1.6 mm, which significantly improved the ignition performance and long storage performance of the energetic semiconductor bridge.

Self‐Healing Magnetic Field‐Assisted Threshold Switching Device Utilizing Dual Field‐Driven Filamentary Physics

AbstractAdvanced filamentary devices are crucial for developing low‐power devices to implement high‐speed logic and neuromorphic devices. Among these, HfO2‐based filamentary devices have attracted attention as viable options due to their threshold‐switching characteristics and compatibility with complementary metal‐oxide‐semiconductor (CMOS) technology. However, the unpredictability of conventional filament formation/rupture driven by an electric field challenges consistency and reliability. A paradigm shift from conventional stochastic electric field‐driven ion migration to controllable ion‐based transportation is essential to devise functional low‐power devices capable of controlling the filament process. This work introduces a magnetic field‐assisted threshold switching (MA‐TS) device, which integrates a neodymium magnet and a nickel (Ni) barrier layer to enable controlled dual field‐driven ion transportation. The dual field‐driven process combining the conventional vertical electric field‐driven ion migration with lateral magnetic field‐driven ion transportation, reveals a distinctive aspect of ion movement. The MA‐TS device achieves superior performances characterized by an ultra‐low threshold voltage (≈0 V), minimized leakage current in the off‐state, a variation‐immune hysteresis‐free characteristic, enhanced yield, and revival‐ability (i.e., self‐healing) after a failed TS operation. By overcoming the limitations of conventional filamentary devices, the MA‐TS device opens up a promising avenue for efficient and stable low‐power applications.

Impact of B4C buffer layer on interface diffusion in Cr/Sc multilayers: combined study by x-ray reflectivity, scattering and fluorescence

In thin film multilayer based optical componentsof x-ray imaging system, diffusion of one material into the other degrades the reflectivity of the mirrors severely. Along with this thermodynamically driven diffusion, there are also growth generated interface roughness of different special frequencies and microstructures which can increase the diffused scattering from the multilayer and reduce the resolution of an image. Generally grazing incidence x-ray reflectivity in specular geometry (specular GIXR) and diffused x-ray scattering measurement in rocking scan geometry yield information regarding microstructure and overall diffusion at the interfaces of a multilayer. In this paper it is shown that grazing incidence x-ray fluorescence (GIXRF) measurement in standing wave condition alongwith the above measurements can give precise information regarding element-specific diffusion at the interfaces of a multilayer structure. Periodic multilayers made of 75 Cr/Sc bilayers with bilayer thickness ∼4 nm with and without B4C barrier layer of 0.2 nm thickness at the interfaces have been prepared using ion beam sputtering system and characterized by GIXR, diffused x-ray scattering and GIXRF measurements using synchrotron x-ray radiation just above the Cr K-edge. From the above measurements, drastic reduction in interface diffusion of Cr and improvement of interface morphology after addition of B4C barrier layer at the interfaces of Cr/Sc multilayers have been observed which is also corroborated by cross-sectional transmission electron microscopy of the multilayers. Finally, in the water window soft x-ray region of 2.3–4.4 nm performance of these multilayers have been tested and the Cr/B4C/Sc multilayer with improved interface quality has been found to yield ∼30.8% reflectivity at 3.11 nm wavelength which is comparable with the best reported reflectivities in the literature at this wavelength.

Effects of spacer layer thickness in InAlN/GaN double-channel HEMTs

Abstract In this paper, the impact of upper channel layer thickness on the electrical characteristics and hysteresis behavior of double-channel InAlN/GaN HEMTs were investigated. The devices with an upper channel layer thickness of 20 nm exhibit higher output current and lower Ron compared to devices with a thickness of 10/6 nm. This is attributed to the higher sheet carrier density and the reduced scattering. However, a 20 nm thickness of the upper channel layer in HEMT exhibits hysteresis phenomena in its electrical characteristics. For this hysteresis phenomenon, capacitance measurements and TEM characterization indicate that it is caused by dislocations in the lower barrier layer under the gate. A thicker upper channel layer is beneficial to increasing the output current of the device but leads to degradation of the lower InAlN barrier layer, resulting in hysteresis. This study provides an optimized solution for the growth and device fabrication of double-channel InAlN materials.

Overshoot‐Suppressed Memristor Array with AlN Oxygen Barrier for Low‐Power Operation in the Intelligent Neuromorphic Systems

As the demand for bio‐inspired neuromorphic systems grows, memristor has emerged as a pivotal component in artificial synaptic devices. This study delves into the advantages and limitations of the one‐transistor‐one‐resistor (1T‐1R) and 0T‐1R architectures for memory array configurations. A significant enhancement in the memristor's on/off ratio, surpassing 103, achieved by integrating both an overshoot suppression layer (OSL) and an ultra‐thin AlN oxygen barrier layer (OBL) is also reported. The concurrent insertion of an AlOx OSL is essential for manifesting the self‐compliance attribute in 4F2 memristor arrays. Evaluations of a 24 × 24 array embedded with OSL and OBL reveal a substantial reduction in retention variation. In terms of functionality, a 7.13‐fold decline in vector‐matrix multiplication error is observed, accentuating the potential of this approach for neural network synapse applications. The analog reset characteristics of the OBL memristor facilitate over 25 multilevel states. Furthermore, the adoption of nonnegative weights presents an avenue to potentially double synaptic integration density. Through simulation program with integrated circuit emphasis simulations, the necessity of nonnegative and 16‐level quantized conductance in balancing power consumption without accuracy loss at the image classification is validated.

Escalation of tropical cyclone impacts on the northwestern Bay of Bengal over the past decade

AbstractTropical cyclones have resulted in casualties and economic losses in the areas surrounding the Bay of Bengal (BoB). Thus, a comprehensive investigation of these tropical cyclones holds vital implications for disaster preparedness and mitigation. This paper compares the occurrence of storms in the last two decades, i.e., 2002–2011 and 2012–2021, and results reveal that such storms exhibited predominantly a northwesterly track towards the northwestern BoB, with a severer intensity but equal total storm frequencies. Over the past decade, a southeast-northwest pathway (SNP) was identified, demonstrating a higher incidence of severe tropical cyclones (STC, with lifetime maximum intensity ≥ 64 knots) over the BoB. Further analysis of the changes in the environmental conditions between these two decades indicates that a southeasterly anomaly in the steering flow contributed to the formation of the SNP. During the same period, the more favorable oceanic conditions during the last decade, including higher sea surface temperatures, a greater upper ocean heat content, a thicker warm water layer, and a thicker barrier layer beneath the SNP, favored the development of these storms by providing more heat energy to the storms. The atmospheric conditions, including increased air-sea heat fluxes, moisture, and instability within the lower troposphere, as well as reduced vertical wind shear, facilitated the development of convection within these storm systems. These favorable conditions improved the potential for storm development into STCs and elevated the risk of the northwestern BoB being impacted by more destructive storms.

Nanostructured S@VACNTs Cathode with Lithium Sulfate Barrier Layer for Exceptionally Stable Cycling in Lithium-Sulfur Batteries

Abstract Lithium-sulfur technology garners significant interest due to sulfur’s higher specific capacity, cost-effectiveness, and environmentally-friendly aspects. However, sulfur’s insulating nature and poor cycle life hinder practical application. To address this, a simple modification to the traditional sulfur electrode configuration is implemented, aiming to achieve high capacity, long cycle life, and rapid charge rates. Binder-free sulfur cathode materials are developed using vertically-aligned carbon nanotubes (CNTs) decorated with sulfur and a lithium sulfate barrier layer. The aligned CNT framework provides high conductivity for electron transportation and short lithium-ion pathways. Simultaneously, the sulfate barrier layer significantly suppresses the shuttle of polysulfides. The S@VACNTs with Li2SO4 coating exhibit an extremely stable reversible areal capacity of 0.9 mAh cm-2 after 1600 cycles at 1C with a capacity retention of 80% after 1200 cycles, over three times higher than lithium iron phosphate cathodes cycled at the same rate. Considering safety concerns related to the formation of lithium dendrite, a full cell Si-Li-S is assembled, displaying good electrochemical performances for up to 100 cycles. The combination of advanced electrode architecture using 1D conductive scaffold with high-specific-capacity active material and the implementation of a novel strategy to suppress polysulfides drastically improves the stability and the performance of Li-S batteries.

Performance and Degradation of Electrolyte Supported SOECs with Advanced Thin-Flm Gadolinium Doped Ceria Barrier Layers in Long-Term Stack Test

Abstract Electrolyte supported Solid Oxide Cells (ESCs) with advanced thin-film Gd-doped ceria diffusion barrier layers between electrolyte and electrodes were assembled and electrochemically investigated in a so-called “rainbow” stack with 30 repeat units (RUs). The barrier layers were deposited onto the electrolyte supports via electron-beam physical evaporation deposition (EB-PVD) method at 600 oC. At the initial stage of the SOEC operation, the stack reached a high performance with an electrical efficiency of 99.65% at 75% steam conversion and a total power input of 1.98 kW. A long-term stack test was performed in SOEC mode for over 5000 h and demonstrated a low voltage degradation of approx. +11.3 mV·kh–1 per RU (+0.9% kh–1). The RUs with EB-PVD GDC thin-films revealed similar initial performance and degradation rate to the state-of-the-art cells with screen printed GDC layers. In this paper, the investigation mainly focuses on the electrochemical characteristics of RUs containing the EB-PVD thin-film GDC layers.

First integration of Ni barrier layer for enhanced threshold switching characteristics in Ag/HfO2-based TS device

Utilizing Ag/HfO2 with nickel (Ni) as a barrier layer, a novel threshold switching (TS) device is devised to overcome challenges such as low reliability, high threshold voltage, and high leakage current. Compared against an Ag/Ti/HfO2-based TS device, the Ag/Ni/HfO2-based TS device exhibits improved electrical characteristics: yield enhancement from 31.7 % to 40.0 %, enhanced endurance from ∼10 cycles to ∼300 cycles, and suppression in off-state current (IOFF) from 1.2 × 10−7 A to 5.2 × 10−10 A under a high compliance current (e.g., 10−4 A). The results obtained through transmission electron microscopy (TEM), energy-dispersive X-ray spectroscopy (EDS), and atomic force microscopy (AFM) support the evidence of those accomplishments. Reducing the effective area of the TS device improves control over erratically generated filaments and the electric field within the switching layer, resulting in enhanced performance such as a reduced threshold voltage (VTH ∼0.35 V), minimized VTH variability (∼0.01 V), decreased a threshold current (ITH, i.e., the leakage current in the off-state before activation, ∼5.2 × 10−10 A), and maximum conductance (∼5.0 × 10−5 S) of low-resistance state. These findings suggest that the optimized Ag/Ni/HfO2-based TS device can serve as a practical solution for low-power applications.

Stable and repeatable ZrO2 RRAM achieved by NiO barrier layer for negative set phenomenon elimination

Resistive random-access memory (RRAM) is a promising non-volatile memory technology due to its fast operation, low power consumption, and high reliability. However, the negative set phenomenon remains a challenge for RRAM, which can lead to the deterioration of device switching parameters. In this study, we successfully addressed this issue by inserting a NiO blocking layer between the ZrO2 and Ag top electrodes in ZrO2-based RRAM. In addition, the resistive switching characteristics of the device are significantly enhanced by the incorporation of a p-type oxide NiO layer. Compared to single-layer ZrO2 devices, the double-layer Ag/NiO/ZrO2/ITO RRAM exhibits improved cycling durability (>500 cycles) and good retention time (3 × 104s). Our analysis of the device conduction mechanism and proposed resistive switching model suggest that oxygen vacancies play a connecting role in the reset process, leading to failed reset behavior. Through the incorporation of a p-type semiconductor NiO layer into ZrO2-based RRAMs, the interference of oxygen vacancies on the reset process can be effectively impeded. This approach not only provides an effective resolution to the unforeseen negative set phenomenon in RRAM devices, but it also holds paramount significance for the advancement of high-performance RRAMs.

Interaction of Neisseria meningitidis carrier and disease isolates of MenB cc32 and MenW cc22 with epithelial cells of the nasopharyngeal barrier

Neisseria meningitidis (Nm, the meningococcus) is considered an asymptomatic colonizer of the upper respiratory tract and a transient member of its microbiome. It is assumed that the spread of N. meningitidis into the bloodstream occurs via transcytosis of the nasopharyngeal epithelial barrier without destroying the barrier layer. Here, we used Calu-3 respiratory epithelial cells that were grown under air-liquid-interface conditions to induce formation of pseudostratified layers and mucus production. The number of bacterial localizations in the outer mucus, as well as cellular adhesion, invasion and transmigration of different carrier and disease N. meningitidis isolates belonging to MenB:cc32 and MenW:cc22 lineages was assessed. In addition, the effect on barrier integrity and cytokine release was determined. Our findings showed that all strains tested resided primarily in the outer mucus layer after 24 h of infection (>80%). Nonetheless, both MenB:cc32 and MenW:cc22 carrier and disease isolates reached the surface of the epithelial cells and overcame the barrier. Interestingly, we observed a significant difference in the number of bacteria transmigrating the epithelial cell barrier, with the representative disease isolates being more efficient to transmigrate compared to carrier isolates. This could be attributed to the capacity of the disease isolates to invade, however could not be assigned to expression of the outer membrane protein Opc. Moreover, we found that the representative meningococcal isolates tested in this study did not damage the epithelial barrier, as shown by TEER measurement, FITC-dextran permeability assays, and expression of cell-junction components.

Effect of Asymmetric InAlGaN/GaN Superlattice Barrier Structure on the Optoelectronic Performance of GaN-Based Green Laser Diode

An asymmetric InAlGaN/GaN superlattice barrier structure without the first quantum barrier layer (FQB) is designed, and its effect on the optoelectronic performance of GaN-based green laser diode (LD) has been investigated based on simulation experiment and analytical results. It is found that, compared with conventional GaN barrier LD, device performance is significantly improved by using FQB-free asymmetric InAlGaN/GaN superlattice barrier structure, including low threshold current, high output power, and high photoelectric conversion efficiency. The threshold current of LD with novel structure is 16.19 mA, which is 22.46% less than GaN barrier LD. Meanwhile, the output power is 110.69 mW at an injection current of 120 mA, which is 16.20% higher compared to conventional LD, and the wall-plug efficiency has an enhancement of 9.5%, reaching 20.27%. FQB-free asymmetric InAlGaN/GaN superlattice barrier layer can reduce optical loss, suppress the polarization effect, and improve the carrier injection efficiency, which is beneficial to improve output power and photoelectric conversion efficiency. The novel epitaxial structure provides theoretical guidance and data support for improving the optoelectronic performance of GaN-based green LD.

Theoretical study of electron mobility in AlGaN back-barrier Al2O3/InAlN/GaN heterostructures under optical phonon scattering

Considering the strong built-in electric field caused by polarization in wurtzite nitride heterostructures, the energy levels and wave functions of the two-dimensional electrons in AlyGa1−yN back-barrier Al2O3/InxAl1−xN/GaN heterostructures are calculated using the finite element difference method. The dispersion relations and electrostatic potentials of optical phonons are obtained by the transfer matrix method. The electron mobility under optical phonon scattering is studied based on the theory of Lei–Ting force balance equation. The influences of AlyGa1−yN back barrier, ternary mixed crystal effect, and size effect are also analyzed by comparing with the Al2O3/InxAl1−xN/GaN heterostructure without back barrier. It is found that the introduction of a back barrier can attenuate the effect of gate-insulating layer, but enhance the effect of barrier and channel layers on electronic states. Then, the interaction between electrons and optical phonons is weakened, so the electron mobility in AlyGa1−yN back-barrier Al2O3/InxAl1−xN/GaN heterostructure is higher than that in Al2O3/InxAl1−xN/GaN structure under the same conditions. It is also found that using a thinner AlyGa1−yN film with y = 0.25 as the back-barrier layer of Al2O3/InxAl1−xN/GaN heterostructure is more conducive to improving 2DEG mobility. These conclusions can provide references for the preparation of InxAl1−xN/GaN heterojunction devices.

Two-dimensional electron gases in AlYN/GaN heterostructures grown by metal–organic chemical vapor deposition

Wurtzite AlN alloyed with group 3 elements Sc and Y boosts the performance of GaN-based high-electron-mobility transistors (HEMTs) significantly as they increase the spontaneous polarization of the barrier layer and, thus, enhance the charge carrier density ns in the two-dimensional electron gas (2DEG) formed at the interface with the GaN channel. The emerging nitride Al1−xYxN additionally features an a lattice parameter matching to that of GaN at x = 0.07–0.11, allowing for the growth of strain-free barriers. Here, we demonstrate the growth of Al1−xYxN/GaN heterostructures for HEMTs by metal–organic chemical vapor deposition for the first time. The effect of the Y concentrations on the 2DEG is investigated in a Y concentration range from 3% to 15%. At 8% Y, a record mobility of 3200 cm2/(Vs) was measured at a low temperature (7 K). Room and low-temperature ns was at 1–2 × 1013 cm−2. Al0.92Y0.08N barriers were coherently strained to the GaN channel for barrier thicknesses from 5 to 15 nm. Finally, the deposition of Al1−xYxN/GaN heterostructures deposited on 4″ 4H–SiC wafers had a room-temperature mobility close to 1400 cm2/(Vs). AlYN/GaN heterostructures may offer advantages over AlScN/GaN heterostructures not only for the lower price and higher abundance of the raw material but also in terms of electrical characteristics and may be more suitable for power amplifying applications due to increased electron mobility.

Landfill cap models under simulated climate change precipitation: assessing long-term infiltration using the HELP model

The Hydrologic Evaluation of Landfill Performance (HELP) model (v 3.04) was used to assess the hydrological performance of two large-scale (~ 80 × 80 × 90 cm) laboratory-based landfill cap models. Desiccation cracking under simulated climate change precipitation (CCP) events was modelled to predict the performance of landfill caps over a 50-year period in Cumbria England, UK. Cumulative infiltration values under different climate conditions were highly sensitive to macro-pore development in the clay liner which is represented by the changing hydraulic conductivity in HELP simulations. Simulation results of cap design 1 (a clay barrier layer only) show that cumulative annual infiltration under normal precipitation (NP) and CCP events, with the initial hydraulic conductivity, ranged between 1 and 2% of the annual precipitation; however, cumulative annual infiltration was 10 to 68% when maximum (degraded) hydraulic conductivity values were used in simulations. A geosynthetic clay liner (GCL) included in cap design 2 significantly reduce cumulative infiltration.

Effect of Lateral Inhomogeneous AlGaN Barrier Layer on Electronic Properties of GaN HEMTs

In this study, an AlGaN/GaN high electron mobility transistor with lateral inhomogeneous AlGaN barrier layer (LI-AlGaN HEMT) is proposed and studied systematically. The LI-AlGaN HEMT comprises three AlGaN regions with varying Al content, connected to the source, gate, and drain, respectively. With the increase of Al content in each region, the saturation current of the LI-AlGaN HEMT increases gradually, while the on-resistance (Ron) and breakdown voltage (BV) decrease. The threshold voltage (Vth) of the LI-AlGaN HEMT depends only on the Al content of AlGaN beneath the gate. By introducing the source field plate (FP), the calculated output current of the conventional FP-HEMT is consistent with the experimental data. After optimizing Al content, the LI-AlGaN FP-HEMT has the same Vth compared with conventional FP-HEMT. However, the saturation current is increased by approximately 20% and the Ron is decreased by approximately 30%. Additionally, the BV is increased to 1008 V. So the optimized laterally inhomogeneous AlGaN HEMT has better DC characteristics and is suitable for high-power GaN device applications.

Research on the novel spinel structure of Cu0.5Ni0.5MnCoO4 and its application in solid oxide fuel cells

In this study, the Cu0.5Ni0.5MnCoO4 (CNMC) material was developed for use in the cathode of solid oxide fuel cells (SOFC). X-ray diffraction (XRD) confirmed the spinel structure and demonstrated compatibility with Yttria-stabilized zirconia (YSZ) electrolyte at elevated temperatures. The conductivity of CNMC was found to be between 28 and 55 S cm–1 at temperatures ranging from 700 to 900 °C. Oxygen-temperature programmed desorption (O2-TPD) revealed that CNMC powder possesses effective oxygen catalytic characteristics. To enhance performance, CNMC was combined with Gd0.1Ce0.9O2-δ (GDC, H2-bank Co. Ltd.) in a mass ratio of 3:7 (CG37). The thermal expansion coefficient (TEC) of this composite was measured at 12.8 × 10–6 K–1, closely matching that of YSZ and avoiding the issue of strontium segregation, eliminating the need for a barrier layer between the electrolyte and the cathode. The peak power densities of CG37 reached 1175 mW cm–2 and 905 mW cm–2 at 800 °C and 750 °C, respectively. CG37 underwent testing for 1000 h under constant-current discharge at 600 mA cm–2 and 750 °C, showing a voltage degradation rate of 2.5%/kh. The cell’s microstructure remained intact without any signs of elemental diffusion or segregation, indicating excellent chemical compatibility and stable structural integrity. This research is expected to further advance the study and utilization of novel solid oxide fuel cells.

Current collapse suppression in AlGaInN/GaN HEMTs with thin unintentionally doped GaN channel and AlN back barrier grown on single-crystal AlN substrate

A high-electron-mobility transistor (HEMT) structure consisting of a 15-nm-thick quaternary AlGaInN top barrier layer, a thin 200-nm-thick unintentionally doped (UID) GaN channel layer, and an AlN back barrier was grown on a single-crystal AlN substrate by metal–organic chemical vapor deposition. The HEMTs fabricated on the grown heterostructure exhibited DC pinch-off characteristics with no large negative resistance owing to the high thermal conductivity of the AlN substrate. The 2-μm-gate-length devices showed the maximum current density of 500 mA/mm and the peak transconductance of 120 mS/mm with the threshold voltage of approximately −4 V. The off-state leakage was less than 30 μA/mm thanks to the thin UID-GaN channel with good crystal quality. The pulsed I–V characteristics for the fabricated HEMTs showed much smaller drain current decreasing compared to the same structured HEMTs with a C-doped GaN back barrier on a SiC substrate. This indicates that the UID-GaN channel grown on the AlN substrate had no harmful impurity levels that cause the current collapse phenomenon. The above-mentioned results demonstrate that the combination of the thin UID-GaN channel and the AlN back barrier works effectively in GaN HEMTs, and it will contribute to the device design and fabrication for future high-power/high-frequency applications.

Experimental study on the corrosion of AlN refractories used as crucibles for induction melting of TiNi alloys

Vacuum induction melting has proven to be a cost-efficient way to fabricate TiNi alloys with excellent compositional homogeneity and uniformity. However, the high reactivities of TiNi alloys generate aggressive melt attacks with a particular ceramic crucible. Here, the performance of AlN crucible for melting TiNi alloys was investigated, and the underlying mechanisms for the interfacial interactions were revealed. The results demonstrated the feasibility of using AlN crucibles for induction melting of TiNi alloys. Specifically, melt infiltration was suppressed and thus physical erosion was diminished by reducing the apparent porosity of the crucible. Further investigations combined with a theoretical analysis revealed that the TiN barrier layer distributed on the crucible surface was formed in situ due to crucible/melt interactions, which protected the ceramic matrix from further melt attack and limited the contaminant levels. Our work provides a viable pathway for the preparation of high-quality TiNi alloys via induction melting.

Hydrogen permeation resistance of ZrN thin film deposited by ion-plating

Hydrogen absorption of Zircaloy nuclear fuel cladding, used in light water reactor at nuclear power plants, poses an increased risk of delayed hydride cracking during interim dry storage. Consequently, novel surface technologies aimed at reducing hydrogen absorption have become a critical area of research. Zirconium nitride coatings, renowned for their high hardness, corrosion resistance, and wear resistance, have seen widespread application in various industries, including medical devices, cutting tools, and decoration. This study explores the effectiveness of ZrN coating in suppressing hydride formation in Zircaloy-4, a material commonly used for nuclear fuel cladding. In this research, ZrN coatings were deposited onto recrystallized Zircaloy-4 substrates using a hollow cathode discharge ion-plating (HCD-IP) system. The coated and uncoated Zircaloy-4 samples were then subjected to electrochemical and gaseous hydriding processes. The study further investigates the differences in microstructure and hydrogen content of coated and uncoated Zircaloy-4. From these results, it is evident that the ZrN thin film deposited by HCD-IP exhibited great resistance to hydrogen permeation against both hydriding conditions. It is concluded that the ZrN thin films can serve as an excellent hydrogen barrier layer for Zircaloy-4.