Ferroelectric thin film devices have been demonstrated using BaxSr1-xTiO3 (BST) as a light intensity detector. Various compositions of BST (x=0.7, 0.8 and 0.9) were prepared using Chemical Solution Deposition method. Solution of barium acetate, strontium acetate, titanium (IV) iso-propoxide in a mixture of acetic acid and ethylene glycol was spin-coated onto a silicon substrate. The BST film was annealed at 800°C. The microstructure and the crystalline characterization of BST were studied using X-Ray Diffraction (XRD) pattern with General Structure Analysis System (GSAS) refinement. The film thickness was measured using Scanning Electron Microscopy (SEM). The response of BST film to source of light intensity was investigated with IRC meter and resonator coupling. The results show that the resistance of a thin BST film decrease as the intensity of light increase. On resonator coupling, VOUT shows a slight increases as the intensity of light increases.