Band Gap Research Articles

Decorating carbon nanotubes with different ratios of graphene quantum dots via ultrasonication as a potential material for CO2 capture

ABSTRACT The harmful impacts of carbon dioxide (CO2) emissions are represented mainly in global warming as a major greenhouse gas, health problem issues, and pollution. As a result, there is currently worldwide interest in developing efficient adsorbents with high adsorption capacity for CO2 gas. In this work, the adsorbent nanocomposites were synthesized from different loadings of graphene quantum dots (10, 20, and 30%) with carbon nanotubes (CNTs) using the ultrasonication method. The prepared nanocomposites were characterized by XRD, HR-TEM UV-Vis, Raman, and BET, techniques to investigate their chemical and physical characteristics. The samples reveal a high surface area and porosity. The optical band gap was calculated for the nanocomposites; it decreased upon increasing the ratio of the GQDs, since the 30% GQDs/CNT show an Eg of about 1.93 eV compared to 2.1 eV for the 10% and 20% GQDs/CNTs. The samples of 20% and 30% GQDs/CNTs revealed the highest active site density; furthermore, they showed the best performance for CO2 gas capture of about 24.6 mmol. g−1 and 25 mmol. g−1, which makes these nanocomposites efficient adsorbents for CO2 emissions.

Exciton-Exciton Interaction in Monolayer MoSe2 from Mutual Screening of Coulomb Binding.

Excitons in two-dimensional (2D) semiconductors are particularly exciting, as reduced screening and dimensional confinement foster their pronounced many-body interactions. Optical pumping is typically used to create excitons so as to study their properties, but at the same time such pumping can also create unbound charge carriers. This makes experimental determination of the exciton-exciton interactions difficult. Most importantly, the two effects of band gap renormalization and Coulomb screening on the individual exciton resonance energy counteract each other. Here by comparing the influences of exciton and electron density on the exciton ground and excited states energies of monolayer MoSe2 using photoluminescence spectroscopy, we are able to distinctly identify the screening of Coulomb binding by the neutral excitons and by charge carriers. The energy difference between exciton ground state (A-1s) and excited state (A-2s) red-shifts by 5.5 meV when the neutral exciton density increases from 0 to 4 × 1011 cm-2, in contrast to the blue shifts with the increase of either electron or hole density. This energy difference change is attributed to the mutual screening of Coulomb binding of neutral excitons, a many-body effect that is over 5 times magnitude stronger than the conventional estimate of exciton-exciton interactions. From this mutual Coulomb screening we extract an exciton polarizability of α2Dexciton = 2.5 × 10-17 eV(m/V)2. Our finding uncovers a mechanism that dominates the repulsive part of many-body interaction between neutral excitons.

Design and Performance of an InAs Quantum Dot Scintillator with Integrated Photodetector

A new scintillation material composed of InAs quantum dots (QDs) hosted within a GaAs matrix was developed, and its performance with different types of radiation is evaluated. A methodology for designing an integrated photodetector (PD) with a low defect density and that is optically matched to the QD’s emission spectrum is introduced, utilizing an engineered epitaxial InAlGaAs metamorphic buffer layer. The photoluminescence (PL) collection efficiency of the integrated PD is examined using two-dimensional scanning laser excitation. The detector response to 5.5 MeV α-particles and 122 keV photons is presented. Yields of 13 electrons/keV for α-particles and 30–60 electrons/keV for photons were observed. The energy resolution of 12% observed with α-particles was mainly limited by noise- and geometry-related optical losses. The radiation hardness of an InAs QDs hosted within GaAs and a wider band gap AlGaAs ternary alloy was studied under a 1 MeV proton implantation up to a 1014 cm−2 dose. The integrated PL responses were compared to evaluate PL quenching due to non-radiative defects. The QDs embedded in the AlGaAs demonstrated improved radiation hardness compared to QDs in the GaAs matrix and in the InGaAs quantum wells.

Electromagnetically tunable spin-valley-polarized current via anomalous Nernst effect in monolayer of jacutingaite.

Monolayer jacutingaite (Pt2HgSe3) exhibits remarkable properties, including significant spin-orbit coupling and a tunable band gap, attributed to its buckled honeycomb geometry and the presence of heavy atoms. In this study, we explore the spin- and valley-dependent anomalous Nernst effect (ANE) in jacutingaite under the influence of a vertical electric field, off-resonance circularly polarized light (OCPL), and an antiferromagnetic exchange field. Our findings, within the low-energy approximation, reveal the emergence of a perfectly spin-polarized ANE with the application of appropriate OCPL and a perfectly valley-polarized ANE under an antiferromagnetic exchange field. Leveraging the robust spin-orbit coupling inherent in monolayer jacutingaite, our study highlights the potential to attain perfectly spin-valley-polarized Nernst currents across a wide range of Fermi energy levels by combining these fields in pairs with a suitable strength. The findings can be used for the development of spin-valley-based optoelectronic devices.&#xD.

Efficient UV-Vis-NIR Responsive CO2 Reduction Photocatalyst with Black Pinecone-Shaped Carbon Nitride Loaded with Lanthanum Oxide.

Photothermal catalysis combines the advantages of photocatalysis and thermal activation, which provides a new research angle for CO2 catalytic reduction. In this study, Black carbon nitride with a three-dimensional (3D) pinecone-shaped structure (BPCN) was prepared by a simple solvothermal method using melamine as a precursor without the aid of a template. Lanthanum oxide doping on the BPCN catalysts (BPCN-La) was achieved by ultrasonic impregnation. This unique pinecone-shaped structure consists of self-assembled and interlaced carbon nitride rods (by SEM). The lanthanum element was distributed on the surface of the CN framework in the form of La2O3 (by XPS). The chemical structures of the samples were characterized by solid-state 13C nuclear magnetic resonance (13C NMR) and elaborated by density functional theory (DFT) analysis. This black carbon nitride expanded the light absorption band edge into the near-infrared (NIR) (300-1400 nm, by UV-vis absorption spectra) and had excellent photothermal conversion activity. La atom doping can significantly boost photogenerated electron excitation (by photocurrent test) and promote carrier separation and transfer (by PL). Upon incorporation of La atoms into BPCN, the highest occupied molecular orbital (HOMO) orbital is more concentrated on the oxygen atoms of La2O3. BPCN-La considerably narrowed the band gap width, exhibited an exceptional photothermal effect, and provided a large surface area, which significantly enhanced the photocatalytic reduction of CO2 reactions. The yields of CO reached 58.2 and 104.9 μmol·h-1·g-1 for BPCN and BPCN-La, respectively, with GCN as the control (6.3 μmol·h-1·g-1). Theoretical reaction pathways and selectivity for the photoreduction of CO2 on BPCN and BPCN-La were studied by DFT simulation. This work provides a new vision for the design of photothermal synergistic without extra-thermal input and full spectral response photocatalysts with high efficiency.

Indium-Iron Oxide Nanosized Solid Solutions as Photocatalysts for the Degradation of Pollutants under Visible Radiation.

A series of solid solutions of indium and iron oxides with different In/Fe ratios (InxFeyO3, with x + y = 2) were synthesized in the form of nanoparticles (diameter of ca. 30-40 nm) with the purpose of generating enhanced photocatalysts with an intermediate band gap compared to those of the monometallic oxides, In2O3 and Fe2O3. The materials were prepared by co-precipitation from an aqueous solution of iron and indium nitrates and extensively characterized with a combination of techniques. XRD analysis proved the formation of the desired InxFeyO3 solid solutions for Fe content in the range 5-25 mol%. UV-Vis absorption analysis showed that the substitution of In with Fe in the crystalline structure led to the anticipated gradual decrease of the band gap values compared to In2O3. The obtained semiconductors were tested as photocatalysts for the degradation of model organic pollutants (phenol and methylene blue) in water. Among the InxFeyO3 solid solutions, In1.7Fe0.3O3 displayed the highest photocatalytic activity in the degradation of the selected probe molecules under UV and visible radiation. Remarkably, In1.7Fe0.3O3 showed a significantly enhanced activity under visible light compared to monometallic indium oxide and iron oxide, and to the benchmark TiO2 P25. This demonstrates that our strategy consisting in engineering the band gap by tuning the composition of InxFeyO3 solid solutions was successful in improving the photocatalytic performance under visible light. Additionally, In1.7Fe0.3O3 fully retained its photocatalytic activity upon reuse in four consecutive cycles.

Mitigating Band Tailing in Kesterite Solar Absorbers: Ab Initio Quantum Dynamics.

Open-circuit voltage deficits are limiting factors in kesterite solar cells. Addressing this issue by suppressing band tailing and nonradiative charge recombination is essential for enhancing the performance. We employ ab initio nonadiabatic molecular dynamics to elucidate the origin of band tailing and charge losses and propose a mitigation strategy. The simulations show that Cu-Zn disorder, associated with antisite defect clusters [CuZn+ZnCu], is a significant source of band tailing in kesterites, as evidenced by the much larger Urbach energy in disordered than ordered kesterites. Cu-Zn disorder gives rise to new sulfur-centered coordination polyhedra, increases structural inhomogeneity, changes electrostatic potential at sulfur centers, and shifts the S(3p) orbital energy. Differences in the S(3p)/Cu(3d) and S(3p)/Sn(5s) hybridization strengths and the S(3p) orbital energy shift reduce the band gap by 0.37 eV. Furthermore, Cu-Zn disorder enhances vibrational motion of sulfur anions and surrounding cations, increasing band gap fluctuations by 15 meV. The stronger electron-phonon interactions reduce charge carrier lifetimes and limit the kesterite solar cell efficiency. Partial substitution of Zn with Cd facilitates structural ordering and significantly suppresses band tailing, particularly in disordered systems. The improvement can be attributed to the larger atomic radius and mass of Cd, which weakens bonding around the anion, suppresses S-related vibrations within the covalent tetrahedra, and reduces nonadiabatic coupling, thereby increasing charge carrier lifetimes. The reported results establish the key influence of cation disorder on band tailing and reduced charge carrier lifetimes in kesterites and highlight cation disorder engineering as a strategy to achieve high-efficiency kesterite solar cells.

Open Sn Framework Structure Hosting Bi Guest atoms - Synthesis, Crystal and Electronic Structure of Na13Sn26Bi.

Although several Na-Sn-Pnictides with a variety of structural motives are known, no ternary compound in the Na-Sn-Bi system has been described yet. In this paper we present the Zintl-phase Na13Sn25.73Bi1.27 comprising a complex, open-framework structure of Sn atoms, with one mixed Sn/Bi site, hosting Na atoms. An additional Bi atom is loosely connected with only weak contacts to the framework filling a larger cavity within the network. According to band structure calculations of the two ordered variants with either full occupation of the mixed site with Sn or Bi, resulting in Na13Sn26Bi and Na13Sn24Bi3, respectively, both compounds are semiconductors with band gaps of 0.5 eV. A comparison of the band structures with the related binary compounds Na5Sn13 and Na7Sn12 shows that only the perfectly charge balanced Na7Sn12 is a semiconductor whereas Na5Sn13 is metallic. The rather specific electronic situation in the ternary compound is traced back to the loosely bound Bi atom, which acts as a guest atom according to Bix@Na13Sn27-x-yBiy, with x=1 and y=0.27, capable to change its oxidation state and thus to uptake additional electrons to form a semiconductor.Na13Sn25.73Bi1.27 is a rare example of an open framework structure of Sn atoms comprising Bi atoms in the cavities.

Analysis on future development of solar cells focusing on materials and devices

In recent times, solar cells have garnered significant attention due to their numerous advantages. These include continuously improving energy conversion efficiency, a simple solution preparation method, flexibility, lightweight design, wearability, suitability for ultra-lightweight space applications, and low-cost material components. Perovskite solar cells have achieved impressive efficiencies of over 25% by using high-quality perovskite films synthesized at low temperatures and by making advancements in compatible interface and electrode materials. Moreover, the stability of cells has become a major focus of research. This paper analyzes the development history, material system, device structure, challenges, and future development direction of perovskite solar cells. The unique photoelectric properties and tunable band gap of materials have made them a hot topic in the field of solar cells. In this paper, the basic characteristics and synthesis methods of perovskite materials are introduced before discussing the device structure, interface engineering, and stability of perovskite solar cells in detail. Finally, it prospects on the future development trend of perovskite solar cells.

Hybrid III-V/Silicon Quantum Photonic Device Generating Broadband Entangled Photon Pairs

The demand for integrated photonic chips combining the generation and manipulation of quantum states of light is steadily increasing, driven by the need for compact and scalable platforms for quantum information technologies. While photonic circuits with diverse functionalities are being developed in different single material platforms, it has become crucial to realize hybrid photonic circuits that harness the advantages of multiple materials while mitigating their respective weaknesses, resulting in enhanced capabilities. Here, we demonstrate a hybrid III-V/silicon quantum photonic device combining the strong second-order nonlinearity and direct band gap of the III-V semiconductor platform with the high maturity and CMOS compatibility of the silicon photonic platform. Our device embeds the spontaneous parametric down-conversion (SPDC) of photon pairs into an AlGaAs source and their vertical routing to an adhesively bonded silicon-on-insulator circuitry, within an evanescent coupling scheme managing both polarization states. This enables the on-chip generation of broadband (>40 nm) telecom photons by type-0 and type-2 SPDC from the hybrid device, at room temperature and with internal pair generation rates exceeding 105s−1 for both types, while the pump beam is strongly rejected. Two-photon interference with 92% visibility (and up to 99% upon 5-nm spectral filtering) proves the high energy-time entanglement quality of the produced quantum state, thereby enabling a wide range of quantum information applications on chip, within a hybrid architecture compliant with electrical pumping and merging the assets of two mature and highly complementary platforms in view of out-of-the-lab deployment of quantum technologies. Published by the American Physical Society 2024

Synergistic effect of FeOOH cocatalyst and Al2O3 passivation layer on BiVO4 photoanode for enhanced photoelectrochemical water oxidation

BiVO4 is one of the most attractive photoanodes for water oxidation due to its 2.4 eV narrow band gap, suitable band edge position, good stability in aqueous solution, low cost and non-toxicity. However, due to some inherent disadvantages such as low carrier mobility, severe charge recombination and slow water oxidation kinetics, the actual BiVO4 photocurrent density is often lower than the theoretical value of 7.5 mA cm−2. In this paper, BiVO4 was modified by alkali-treated Al2O3 passivation layer and FeOOH, and the photocurrent density of BiVO4 reached an astonishing 3.8 mA cm−2 at 1.23 VRHE, and the ABPE (applied bias photon-to-current efficiency) was close to 1 %. The detailed structural characterization and electrochemical test show that Al2O3 prepared by ALD (atomic layer deposition) can play a role in passivation of BiVO4 surface state after alkali treatment, inhibit electron hole recombination on BiVO4 surface, and accelerate hole transfer. As a hole storage layer and catalyst layer, FeOOH promoted the interfacial hole transfer, increased the active sites at the electrode electrolyte interface, and significantly increased the water oxidation activity. This work provides a novel method to enhance the performance of water electrolysis by using ALD to assist passivation of bismuth vanadate photoanode surface states.

Si/Graphene exotic type IMPATT (p+-n-n+-) Opto-sensor: First experimental observation

On-chip DC characterization study has been performed on exotic-type Si/Graphene Avalanche Transit Time (ATT) device for ultra-fast optical-sensing. The performance of the newly proposed device has further been compared with conventional narrow and wide band gap semiconductor based p+-n-n+ devices. It has been observed that at X-band frequencies, the new class of device outperforms Si/SiC/GaN and their heterostructure counterparts, in terms of better RF power density (∼1W and 8.1W), RF conversion efficiency (6 % and 18 %) and much better quantum efficiency (93 % and 91.5 %), respectively for device active-region-widths of 15 μm and 25 μm. Standard Chemical Vapor Deposition (CVD) route has been followed to fabricate the new class of device. Further, the authors have studied the applicability of the newly developed devices for optical-sensing. This comprehensive study reveals that the Device Under Test (DUT) exhibits photo responsivity at least 10 times better than its counter parts. Thus, the study will be useful for future applications in single-photon-detection for defence and civil sectors.

Defect Passivation of Mn2+-Doped CsPbX3(X=Cl,Br) Perovskite Nanocrystals as Electrocatalyst for Overall Water Splitting.

Mn doping has been used to improve the physical chemistry of lead halide perovskite nanocrystals such as CsPbX3, where X is a halogen ion. In this paper, a two-phase method for Mn-doped CsPbX3 nanosheets (where X=Br, Cl), namely water-hexane system, is reported. Compared to conventional catalyst arrays, the band gap of CsPbBr3 nanocrystalline is easily tuned, the carrier diffusion distance is remote, the band edge position of the band structure is favorable for a wide range of electrocatalytic redox reactions, and the catalytic active site is maximally exposed, providing a larger electrolyte contact area. The porous hierarchical structure also accelerates the release of hydrogen bubbles. The results showed that the optimized Mn : CsPbBr3 catalyst exhibited excellent electrolytic performance of aquatic hydrogen in alkaline electrolyte (1 mol/L KOH). The overpotentials of the oxygen evolution reaction (OER) at the current densities of 10 and 100 mA cm-2 are only 114.4 and 505.4 mV, respectively, with a Tafel slope of 43 mV dec-1. At a current density of 10 mA cm-2, the excess potential required for the hydrogen evolution reaction (HER) is 158.6 mV and it exhibits excellent electrochemical stability. The Mn : CsPbBr3 nanocrystalline consists of two electrodes for hydrolysis of water, requiring only a voltage of 1.45 V. This provides implications for the optimization of electrocatalysts in alkaline electrolytes with the aim of developing next generation 2D electrocatalysts for overall water splitting.

Cs3LiGe4, One Compound with Two Complementary Structural Descriptions: Isolated [Ge4]4- Tetrahedral Clusters Coordinated by Li+ and Cs+ Cations or One-Dimensional [LiGe4]3- Polyanions Packed within a Matrix of Cs+ Cations?

Reported are the synthesis and structural characterization of Cs3LiGe4, the first structurally characterized lithium-containing cesium germanide. Single-crystal X-ray diffraction data indicate that Cs3LiGe4 crystallizes in an orthorhombic crystal system with the space group Cmcm (no. 63, Person symbol oS32) with unit cell parameters a = 6.950(2) Å, b = 15.503(3) Å, and c = 9.919(2) Å and V = 1068.65(4) Å3. The structure consists of [Ge]44- tetrahedral clusters with the Li atoms positioned in such a way that polyanionic [LiGe]43- chains could be considered as well. Electronic structure calculations indicate an intrinsic semiconductor with a band gap of 0.76 eV. To understand the nuances of the chemical bonding, position-space techniques based on the quantum theory of atoms in molecules, the electron localizability indicator, and their basin intersections were employed confirming the covalent character of the Ge-Ge bonding. The strong polarity of the interactions between [Ge]44- and the surrounding lithium and cesium cations suggests to interpret these as mainly ionic, further supporting the most basic structure rationalization [Cs+]3[Li+][Ge]44-, following the Zintl-Klemm concept. The electron localizability indicator topology affirms the striking similarities between [Ge]44- and molecular As4 tetrahedra in yellow arsenic, further supporting Klemm's pseudoatom concept on a quantum chemical basis.

Investigating the impact of ITO substrates on the optical and electronic properties ofWSe2monolayers.

Two-dimensional (2D) materials, particularly transition metal dichalcogenides (TMDCs), have gathered significant attention due to their interesting electrical and optical properties. Among TMDCs, monolayers of WSe2exhibit a direct band gap and high exciton binding energy, which enhances photon emission and absorption even at room temperature. This study investigates the electronic and optical properties of WSe2monolayers when they are mechanically transferred to indium tin oxide (ITO) substrates. ITO is a transparent conducting electrode (TCE) used in many industrial opto-electronic applications. Samples were mechanically transferred under ambient conditions, consequently trapping an adsorbate layer of atmospheric molecules unintentionally between the monolayer and the substrate. To reduce the amount of adsorbates, some samples were thermally annealed. Atomic force microscopy (AFM) confirmed the presence of the adsorbate layer under the TMD and its partial removal after annealing. X-ray photoelectron spectroscopy (XPS) confirmed the presence of carbon species among the adsorbates even after annealing. Photoluminescence (PL) measurements show that WSe2remains optically active on ITO even after annealing. Moreover, the luminescence intensity and energy are affected by the amount of adsorbates under the WSe2monolayer. Scanning Tunnelling Spectroscopy reveals that the TMD monolayer is n-doped, and that its band edges form a type I band alignment with ITO.. Surface potential measurements show a polarity change after annealing, indicating that polar molecules, most likely water, are being removed. This comprehensive study shows that a TCE does not quench WSe2luminescence even after a prolonged thermal annealing, although its optical and electronic properties are affected by unintentional adsorbates. These findings provide insights for better understanding, controlling, and design of 2D material heterostructures on TCEs.

Photovoltaic response promoted via intramolecular charge transfer in triphenylpyridine core with small acceptors: A DFT/TD-DFT study

Currently, A−π−A configured molecules (TTP1-TTP6) were designed from the reference compound (TPPR) by modifying the terminal acceptors for photovoltaic materials. Density functional theory (DFT) and time-dependent density functional theory (TD-DFT) using the M06/6-311G(d,p) functional were employed to analyze the photonic and electronic properties of the newly designed derivatives. Various analyses; frontier molecular orbitals (FMOs), density of states (DOS), absorption spectra (λmax), transition density matrix (TDM), binding energy (Eb), hole-electron and open circuit voltage (Voc) were performed to explore the photovoltaic properties of triphenylpyridine based compounds. The structural modulation with acceptor moieties significantly tuned their HOMO and LUMO levels, resulting in reduced band gaps (2.833–3.037 eV). They also exhibited broader absorption spectra (λmax) ranging from 482.560 to 514.756 nm as compared to the reference compound (486.289 nm). Notably, TPP3 showed the good photovoltaic response as it displayed the least energy gap (2.833 eV) with lower binding energy (0.415 eV) and bathochromic shift (512.798 nm) in absorption spectra as compared to all other derivatives. Beside this, a comparative study with spiro-OMeTAD and P3HT standard hole transport materials illustrated that these materials can also be utilized as effective photovoltaic materials.

TM and P dual sites on polymeric carbon nitride enable highly selective CO reduction to C2 products with low potentials: A theoretical perspective.

The CO reduction reaction (CORR) for the production of high-value-added multi-carbon (C2+) products is currently being actively investigated, where searching for high-efficiency catalysts with moderate CO intermediate binding strength and low kinetic barrier for C-C coupling poses a significant challenge. In this study, we employed density functional theory computations to design four synergistic coupling dual sites catalysts for CORR to C2 products, namely, TM-P@melon, by co-doping transition metals (TM = Mn, Fe, Co, and Ni) and phosphorus (P) into the polymeric carbon nitride (i.e., melon-CN). Mn-P@melon and Ni-P@melon exhibit higher selectivity toward C2H5OH and C2H6, respectively, with limiting potentials (C-C coupling kinetic energy barriers) of -0.43V (0.52eV) and -0.17V (0.26eV), respectively. The introduction of TM and P atoms not only narrows the band gap of melon-CN but also favors the coupling of CO and *CHO, providing an active site for C-C coupling, thus facilitating the catalytic reaction. Our work provides rational insights for the design of stable, low-cost, and efficient CORR dual sites catalysts that facilitate the sustainable production of high-value C2 chemicals and fuels.

Structural dependence of magnetic, luminescence and band gap of Li-Mg ferrite nanomaterials

Structural dependence of magnetic, luminescence and band gap of Li-Mg ferrite nanomaterials

Using phosphorus doped hydrogenated silicon oxycarbide film as a window layer on the light entrance side of silicon heterojunction solar cells: The role of phase separation on electron transport

The phosphorus doped hydrogenated nanocrystalline silicon oxycarbide (n-nc-SiCO:H) layer can be used as a window layer on the light incident side of silicon heterojunction solar cells (HJT). The chemical composition, structural organization and properties of the n-nc-SiCO:H layer deposited from plasma enhanced chemical vapor deposition (PECVD) method can be easily manipulated via radio frequency power density tuned. Phase separation is observed in the n-nc-SiCO:H layer in which nanoscale silicon crystallites were embedded in amorphous silicon oxycarbide matrix. The optical properties of the n-nc-SiCO:H layer are depended on oxygen and carbon atoms incorporation ratio. The conductivity of the n-nc-SiCO:H layer is dominated by activated phosphorus concentration and the phase separation. The activated phosphorus atoms which play an important role on electron transportation are distributed in both crystalline silicon phase and amorphous silicon phase. Both activated phosphorus concentration and band gap value for oxygen rich amorphous silicon oxycarbide layer are determined by incorporation ratio of O atoms. The interplay effects of optical and electrical properties of the n-nc-SiCO:H layers on HJT cells electric performance variation are revealed out in this report. An average efficiency (across ∼120 cells) of 26.3 % was achieved in cells with optimized power density for the n-nc-SiCO:H layer. The results demonstrate that phase separation in the n-nc-SiCO:H layer plays a critical role on electron transportation.

Oxygen-Doped Porous Ultrathin Graphitic Carbon Nitride Nanosheets for Photocatalytic Hydrogen Evolution and Rhodamine B Degradation.

Graphite phase carbon nitride (g-C3N4) is a highly promising metal-free photocatalyst, but its low activity, due to limited quantum efficiency and small specific surface area, restricts its practical application. While exfoliating bulk crystals into porous thin-layer nanosheets and incorporating dopants have been shown to improve photocatalytic efficiency, these methods are typically complex, time-consuming, and costly processes. In this study, we developed a simple approach to synthesize oxygen-doped porous g-C3N4 (OCN) nanosheets. The resulting OCN exhibited significantly enhanced light absorption and visible-light photocatalytic activity compared to bulk g-C3N4 (BCN) and g-C3N4 (CN). The OCN achieved an impressive hydrogen evolution reaction (HER) rate of 8.02 mmol g-1 h-1, eight times greater than BCN, and demonstrated a high Rhodamine B (RhB) degradation rate of 97.3 % owing to the generation of abundant singlet oxygen. These improvements in photocatalytic performance are attributed to the narrow band gap and enhanced electron transfer properties, suggesting a promising route for the efficient design of g-C3N4-based photocatalysts.