Wide Band Gap Research Articles

Breaking New Grounds: solid-state synthesis of TiO2 – La2O3 – CuO Nanocomposites for degrading Brilliant Green dye under Visible Light

Environmental pollution, particularly from industrial dyes and chemicals, poses a significant threat to ecosystems and human health. Traditional pollution mitigation methods are often inefficient and costly. Photocatalysis has emerged as a promising solution for degrading pollutants using light energy. Titanium dioxide (TiO2) is a widely studied photocatalyst due to its stability, non-toxicity, and strong oxidative power. However, its efficiency is limited by a wide bandgap, restricting absorption to the UV region, and rapid electron-hole recombination. To address these limitations, doping TiO2 with materials like La2O3 and CuO has been explored to enhance its photocatalytic activity under visible light. This study investigates the enhancement of TiO2 nanocomposites by incorporating La2O3 and CuO. X-ray diffraction (XRD) revealed that the nanocomposites retained TiO2's anatase and rutile phases with improved crystallinity. Scanning electron microscopy (SEM) displayed spherical nanoparticles forming agglomerates, typically due to high surface energy. Energy-dispersive X-ray spectroscopy (EDS) and X-ray photoelectron spectroscopy (XPS) confirmed the presence of La and Cu in the TiO2 matrix. Fourier-transform infrared (FTIR) spectroscopy identified characteristic vibrational modes of Ti–O, La–O, and Cu–O bonds, suggesting strong chemical interactions between dopants and TiO2 lattice. Ultraviolet-visible (UV-Vis) spectroscopy showed a red shift in absorption spectra with La2O3 and CuO addition, reducing the bandgap energy from 3.23 eV (pure TiO2) to 2.27 eV for the TiO2–0.1La2O3–0.2CuO composite. Photoluminescence (PL) spectroscopy indicated improved charge separation and reduced electron-hole recombination rates in the synthesized nanocomposites. Photocatalytic performance was evaluated by degrading Brilliant Green (BG) dye under visible light. The TiO2–0.1La2O3–0.2CuO (TLC0.2) nanocomposite achieved a maximum dye degradation of over 95% after 204 minutes under optimal conditions (C0 = 17 mg/L and a S/L ratio of 1 g/L). Adding the inorganic agent Na2SO4 to this process significantly enhanced photocatalytic activity, increasing degradation from 56% to 95% after 180 min of visible light irradiation under C0 = 20 mg/L and S/L = 0.5 g/L conditions, as it shows a high stability after six reuse cycles. In conclusion, La2O3 and CuO doping significantly enhance TiO2 nanocomposites' crystalline structure, morphology, optical properties, and photocatalytic efficiency, demonstrating their potential for environmental remediation and solar energy conversion.

Advances in defect characterization techniques using polarized light observation in SiC wafers for power devices

This short review provides an overview of advancements in the characterization of defects in silicon carbide (SiC) wafers using polarized light observation. SiC, which has a wide bandgap and excellent thermal and electrical properties, is widely used in power devices. However, various defects such as threading screw dislocations (TSD), threading edge dislocations (TED), and basal plane dislocations (BPD) can significantly affect device performance and reliability. Polarized light observation offers a nondestructive method for visualizing these defects and analyzing the stress fields induced within the SiC crystal structure. This paper summarizes recent developments in this technique, including the application of analyzer rotation to enhance the contrast in defect visualization. Furthermore, the development of automated systems for rapid wafer evaluation is discussed, highlighting the role of polarized light observation in improving quality control and production efficiency in SiC power device manufacturing.

Numerical investigation of bandgap characteristics in integrated metallic metafilters for nonlinear guided wave applications

Guided waves propagating in nonlinear media, featuring second harmonic generation, represent a promising avenue for early-stage damage detection due to their high sensitivity and long-range propagation capabilities. However, nonlinear ultrasonic measurements are hindered by nonlinearities induced by the experimental system, necessitating careful calibrations that have restricted their application to laboratory settings. While several phononic crystal and metamaterial designs have been devised to enhance nonlinear-based ultrasonic testing, most are tailored for suppressing second harmonics within a frequency range of 100–300 kHz, primarily utilizing low-frequency excitation. In this paper, we propose a metallic ring-shaped metafilter designed to explore high-order bandgaps. To fully understand the bandgap characteristics, we begin by analyzing mode shapes, providing insights into the underlying wave mechanics. The efficacy of the designed filter is subsequently assessed through 3D time step elastodynamic simulations. In addition, this study underscores the significance of parameters such as the number of rings employed in the filter, signal duration, and bandgap width in optimizing its performance. Furthermore, the observed mode conversion phenomena from S0 to A0 guided wave modes underscore the filter’s capacity to influence guided wave propagation. The defect localization technique, based on the time difference of arrival of second-order wave modes, accurately predicts the defect location with an error margin of less than 0.2%. The present investigation showcases advancements in the sensitivity of nonlinear-based guided wave testing for characterizing microstructural changes, promising substantial potential for detecting incipient damage in practical structural health monitoring applications.

Impact of UV annealing on the hole effective mobility in SnO pFET

Using ultraviolet (UV) annealing through wide energy bandgap HfO2/SiO2 gate dielectric, nanosheet SnO pFET achieved hole effective mobility (µeff) from 55 cm2/V-s at low hole density (Qh) to 13.38 cm2/V-s at 5 × 1012 cm-2 Qh, compared to that of 9.03 cm2/V-s at 5 × 1012 cm-2 Qh for SnO device without UV annealing. This is the highest µeff among oxide semiconductor pFETs at high Qh, which is required to realize low-power high-density monolithic 3D CMOS logic. This requires excellent surface roughness, good uniformity and free-from grain boundaries that is beyond the thermally-annealed poly-Si. Excellent on-current/off-current (ION/IOFF) value of 1.05 × 105 were measured simultaneously in the UV-annealed SnO pFET, which is due to the ultra-thin 8 nm thick SnO nanosheet channel to pinch off the channel leakage. From X-ray photoelectron spectroscopy (XPS) analysis, the 48% µeff improvement by UV irradiation is due to increased Sn2+ and decreased Sn0. Such high µeff at high Qh, large ION/IOFF, smooth surface, good uniformity and low thermal budget process are the enabling technologies for monolithic 3D CMOS.

The investigation on the structural, electronic and optical properties of wide band gap semiconductor material Bi24M2O40 (M = Si, Ge, As, P)

The investigation on the structural, electronic and optical properties of wide band gap semiconductor material Bi24M2O40 (M = Si, Ge, As, P)

Systematic long-term investigation on Cu2ZnCdS4 wide band gap semiconducting materials for optics and luminescence applications

Copper Zinc Cadmium Sulfide (Cu2ZnCdS4) semiconducting material compound synthesized using a new economic beneficial route. Copper sulfate, zinc sulfate, cadmium sulfate and thiourea salt solutions were utilized for Cu2ZnCdS4 compound formation. Basic characteristics like pH value, electrical conductivity, concentration measurements were investigated for several hundred samples. Optics transmittance was investigated by UV – Vis spectrophotometer within the 350 to 950 nm range. Photo luminescence measurement was examined by using photo–fluorometer. Optic properties of Cu2ZnCdS4 compound were investigated through photo-calorimeter measurements including mixed wavelength bands. The real time investigated noteworthy results from several hundred samples are presented and discussed.

Bandgap characteristics of four component periodic pile barriers in passive vibration isolation

Based on the local resonance theory, the vibration isolation performance of four-component periodic pile barriers consisting of a matrix, an outer pipe, an inner pipe, and a pile core was investigated using the finite element method (FEM). This configuration is contrasted with traditional three-component periodic pile barriers, which are composed of a matrix, a pipe, and a pile core. The four-component systems demonstrate significantly broader bandgaps compared to three-component systems. To validate the efficiency of the FEM, model test on pile barriers were conducted, facilitating a comparison between the FEM and experimental observations of bandgap characteristics. Additionally, the effects of the outer pipe’s density, elastic modulus, and thickness on the complete bandgap characteristics were comprehensively studied within the four-component structure. It is found that the broadest vibration isolation band gaps occur under hexagonal arrangement pattern. In square and hexagonal lattice configurations, the density, elastic modulus, and thickness of the outer pipe pile’s pile have predominantly influenced the upper bound frequency (UBF). There has been a positive correlation between the elastic modulus and the UBF, while the density and thickness have shown inverse relationships. Moreover, there exists a elastic modulus threshold, marking a transition in the displacement mode of the UBF, from the outer irreducible Brillouin zone (M or X) to the inner zone (Γ). Once the threshold is exceeded, both the vibration displacement mode and the width of bandgap remain substantially unchanged. The results obtained in the present paper are very useful for the design and application of periodic pile barriers in ambient vibration reduction.

Enhanced photocatalytic properties of TiO2/rGO nanocomposites Doped with CdS

To increase the photocatalytic activity of nanocomposite based on TiO2 and rGO (NC) and improve its photosensitivity in the visible region of the spectrum, the influence of CdS concentration (1 to 10 wt% with respect to NC) on its physicochemical and photocatalytic properties was studied. The addition of CdS to NC leads to a significant increase in the photocatalytic activity. An almost fivefold increase in photocurrent compared to pure NC was registered for NC/CdS_5%. Data on Methylene blue photodegradation showed that after 210 min of irradiation, only 5 % of dye molecules remained in solution. This value is 14.4 and 11.6 times higher than that of pure NC or CdS, respectively. Enhanced photocatalytic activity is related both to the improvement of NC absorption in the region of 400–800 nm and the decrease of the band gap width of NC upon addition of CdS, as well as the significant change in the electrophysical characteristics of the nanocomposite.

Multiscale topology optimization for designing locally resonant acoustic metamaterials with specified low-frequency bandgaps

Locally resonant acoustic metamaterials (LRAMs) have significant potential to isolate low-frequency vibrations and noise, whereas designing them with specified bandgaps is challenging. Compared to the monoscale method, the multiscale method can design microstructures that form equivalent materials to act as scatterers, coatings, and matrices. This may aid in obtaining LRAMs that are sometimes difficult to achieve with the monoscale method. Therefore, a multiscale topology optimization method is presented to design LRAMs with bandgaps that meet specified frequency constraints. Since bandgap optimizations are complicated, many local minimum solutions may exist when using sensitivity-based methods. To mitigate this issue, a macro-parameter optimization stage using a genetic algorithm (GA) is added between the macro and micro optimizations in this top-down multiscale framework. As a result, the method comprises three optimization stages: macro-bandgap optimization, macro-parameter optimization, and micro-optimization. Since the macrostructures consist of multiple microstructures and the microstructures consist of multiple materials, a parameterized level-set-based multi-material topology method is adopted to obtain topologies on both scales. The effectiveness of the proposed method is demonstrated through numerical examples of two optimization problems. The first is to obtain LRAMs with the maximum bandgap width while ensuring their bandgaps encompass specified frequency ranges. The other is to obtain LRAMs with specified bandgaps. Successfully obtained LRAMs with specified bandgaps demonstrate the application prospects of this method in designing structures and devices to address issues related to vibrations and noise.

Designing flexible TiO2/SrTiO3/BiOBr recyclable fiber membrane with spatial dual oxidation sites for photocatalytic uranium extraction under visible light

The utilization of nuclear energy generates a substantial volume of wastewater containing uranium, posing a significant threat to both aquatic ecosystems and human health. The current photocatalytic materials utilized for uranium extraction commonly exhibit insufficient redox capabilities, inefficient separation of photogenerated carriers, and challenging recovery. Therefore, recyclable TiO2/SrTiO3/BiOBr (TSB) dual Z-scheme heterojunction fiber membrane materials with dual oxidation sites were successfully synthesized, with advantages of rapid carrier separation and transfer and a broad photo-response range of the dual Z-scheme heterojunctions. Due to the presence of dual oxidation sites, TSB exhibited an exceptional uranium extraction performance, achieving a remarkable 98.9 % extraction rate without the need for sacrificial agents, which was 2.48, 1.79, and 3.34 times of those of ordinary TiO2, SrTiO3, and BiOBr, respectively. The extraction rate of uranium from TSB was 85 % after five cycles. Optical and photoelectric tests revealed that TSB reduced the bandgap width by 0.25 eV compared to that of TiO2, enhanced the fluorescence lifetime by 1.3 ns, lowered the electrical resistance, and higher optical current density, confirming the effective charge transport at the catalyst interfaces. The charge transfer routes in the TSB dual Z-scheme were confirmed by X-ray photoelectron spectroscopy and density functional theory. The potent oxidizing ·OH generated by TSB played a crucial role in facilitating the conversion of U(VI) into insoluble (UO2)O2·2H2O. In conclusion, this work provides a novel strategy for the design of dual Z-scheme heterojunctions and offers a new method for practical and recoverable uranium extraction.

Signal growth in a pure time-modulated transmission line and the loss effect.

We present the first comprehensive study for signal growth in transmission lines (TL) with purely time-modulated characteristic impedance (infinite superluminality). This study pioneers the investigation into the effects of varying the cell's electrical length and the impact of loss on momentum bandgaps and amplification levels. It also thoroughly examines how time-modulated transmission line truncation by a static load influences the sensitivity of amplification gain to the relative phase between the incoming signal and modulation, comparing these findings with the case of parametric amplification. Varying is accomplished by loading TLs with a sinusoidally time-modulated capacitor (TMC). The study starts with a simple lumped model cell to facilitate understanding of the phenomena. Following this, transmission lines are introduced, and the effects of incorporating loss are examined. To accomplish this, three models are investigated: a lossless L-C TL lumped model loaded with a shunt lossless TMC and a TL loaded with a shunt lossless and lossy TMC. Dispersion diagrams are plotted and momentum bandgaps are identified at a modulation frequency double the signal frequency. Within the momentum bandgap, only imaginary frequencies are found and correlated to momentum bandgap width and signal growth level. Signal growth is confirmed using harmonic balance and transient simulations, and the results are consistent with the dispersion diagram outcomes.

Analytical formulae for design of one-dimensional sonic crystals with smooth geometry based on symbolic regression

Even though locally periodic structures have been studied for more than three decades, the known analytical expressions relating the waveguide geometry and the acoustic transmission are limited to a few special cases. Having an access to numerical model is a great opportunity for data-driven discovery. Our choice of cubic splines to parametrize the waveguide unit cell geometry offers enough variability for waveguide design. Using Webster equation for unit cell and Floquet-Bloch theory for periodic structures, a dataset of numerical solutions was prepared. Employing the methods of physics-informed machine learning, we have extracted analytical formulae relating the waveguide geometry and the corresponding dispersion relation or directly the bandgap widths. The results contribute to the overall readability of the system and enable a deeper understanding of the underlying principles. Specifically, it allows for assessing the influence of the waveguide geometry, offering more efficient alternative to computationally demanding numerical optimization.

Tensile Strength Property with PdCo-Cu Multi-Layer Lamination and Heat Treatment of MEMS Probe for Probe Card

Cantilever wire probe card has limited to transport high-speed signal because of long wire but it is suitable for inspecting high-current and high voltage semiconductor such as wide band gap (WBG) power semiconductors.Superior mechanical property of a probe card wire is in demand because it is respectively used wafer inspection with in and out pad on the top surface of the power semiconductor wafer. Therefore, in this study, tensile specimens of micro electro-mechanical systems (MEMS) probe alternatively layered and electroplated with palladium (Pd)-cobalt (Co) alloy layers and copper (Cu) layers. MEMS probe was also measured tensile strength and elongation with multi-lamination and heat treatment conditions. Additionally, fractography of fracture surface after tensile test were analyzed using a scanning electron microscope (SEM). As the number of PdCo-Cu multi-layer increased, 11, 15 and 21 layered specimens showed higher tensile strength and longer elongation than 5 layered specimens because of the increase of laminated interface of PdCo and Cu. 7 layered specimen after isothermal aging had higher tensile strength and longer elongation than before isothermal aging. In 5, 11, 15 and 21 layered specimens, the fracture surfaces of tensile test specimens without aging treatment showed a ductile-brittle mixed fracture mode. Fracture surfaces of 7-layered specimen before and after isothermal aging showed a ductile-brittle mixed fracture mode.

Structural, electronic and optical properties of α -Si3N4, β-Si3N4 and γ-Si3N4 using density functional theory

Density Functional Theory (DFT) has in recent years gained a lot of popularity and has become an efficient and reliable tool in the study of material properties. This is specifically due to its computational convenience and excellent results in the prediction of material properties, which is aided by the development of highly efficient and accurate functionals. DFT has successfully been applied in a vast study of material at both ground and excited states. In this study based on DFT structural, optical, electronic properties and phonon frequency of silicon nitrides of different phases were studied using the GGA as exchange-correlation functional. For the electronic band gap calculation the results was obtained using the GGA and the hybrid HSE06 respectively for α -Si3N4 with space group (P31c), β-Si3N4 with space group (P63/m) and γ-Si3N4 phase polymorph with space group (14‾3d). Results obtained for the phases α -Si3N4 shows a narrow indirect band gap while β and γ -Si3N4 indicate a wide indirect band gap material for wide possible application in high temperature and high-power applications. Cohesive energy calculation and phonon frequencies were obtained to check the mechanical and dynamic stability of the three different phases. Results obtain for density of states, partial density of states and the optical properties, such as absorption coefficient, refractive index, extinction coefficient, reflectivity and electron energy loss spectra which all show good agreement with previous studies and relative experimental data.

Seed Layers for Wide-Band Gap Coevaporated Perovskite Solar Cells: CsCl Regulates Band Gap and Reduces Process Variability

Seed Layers for Wide-Band Gap Coevaporated Perovskite Solar Cells: CsCl Regulates Band Gap and Reduces Process Variability

Ionic Liquid-Assisted Strategy for Morphology Engineering of Inorganic Cesium-Based Perovskite Thin Films Toward High-Performance Solar Cells.

The wide bandgap CsPbI2Br perovskite materials have attracted significant attention due to their high thermal stability and compatibility with narrow bandgap materials in tandem devices. The performance of perovskite solar cells (PSCs) is highly dependent on the quality of the perovskite layer, which is governed by the crystallization process during solution processing. However, the crystallization dynamics of CsPbI2Br thin films remain less explored compared to conventional organic-inorganic perovskites. Achieving high-quality CsPbI2Br films with uniform morphology and large perovskite grains remains challenging with standard solution techniques. This study applies the ionic liquid (IL) [EMIM]+[PF6]- as an additive within the bulk CsPbI2Br absorber layer. Within our experimental regime, [EMIM]+[PF6]- accelerates the crystallization process while promoting the formation of large perovskite grains, a feature not commonly observed in previous studies. Our experimental results suggest that the IL acts as heterogeneous nucleation sites, and varying IL incorporation amount significantly impacts the morphology of CsPbI2Br perovskite films. Consistent UV-vis and photoluminescence (PL) red-shifts are observed in the IL-incorporated CsPbI2Br films, with X-ray diffraction (XRD) data projecting an influence on the perovskite crystal structure. These findings provide new insights into the role of ILs in controlling crystallization and morphology that have been minimally discussed in the literature. The incorporation of an optimized amount of [EMIM]+[PF6]- promotes the formation of highly crystalline perovskite thin films with excellent morphology, reducing defect density, enhancing carrier transport, and yielding large grain sizes. As a result, PSCs fabricated with [EMIM]+[PF6]- achieved a power conversion efficiency (PCE) of 17.11% (stabilized at 15.87%) and an open-circuit voltage (VOC) of 1.39 V, along with improved stability compared to control devices. This work provides a straightforward approach for producing high-quality CsPbI2Br thin films with high reproducibility, contributing valuable advancements to Cs-based PSCs.

CVD‐Synthesized CsAg2I3 Single Crystals toward Polarization UV Photodetection and Anti‐Counterfeiting Identification

AbstractLow‐dimensional ternary silver halide (CsAg2I3), an emerging inorganic lead‐free perovskite, has garnered significant scientific attention due to its strong quantum confinement effects, wide bandgaps, non‐toxicity, and others. However, the photophysical properties and optoelectronic performance of CsAg2I3 materials and devices are significantly compromised by crystal quality and defects arising from liquid‐phase preparation. Herein, 1D CsAg2I3 single crystals newly grown by the chemical vapor deposition method are reported. These crystals display exceptional quality and stability over a 3‐month period despite exposure to air and moisture. The high in‐plane anisotropic structure, phonon vibrations, and refractive index of CsAg2I3 crystals are also experimentally elucidated. Polarization‐sensitive ultraviolet photodetector based on the CsAg2I3 monocrystal features a responsivity of 139 mA W−1, a specific detectivity of 1.05 × 1011 cm Hz1/2 W−1, an ultra‐fast photoresponse speed of 48.2/69.1 µs, and a dichroic ratio of 2.66 upon 360 nm irradiation at −5.0 V bias. The photodetector excels amongst its competitors, moving toward the potential application of rapid optical anti‐counterfeiting identification. This work, which leverages grown high‐crystalline and highly stable CsAg2I3 monocrystals, holds promises for advancing this functional material into a robust next‐generation optoelectronic devices capable of probing sensitive optical sensing and specific azimuth recognition.

Fabrication of Ripple Structured Silicon Carbide (SiC) Films for Nano‐Grating and Solar Cell Applications

AbstractIn the present study, we aim to investigate the self‐organization of unexplored silicon carbide (SiC) film surfaces under 30 keV oblique Ar+ ions irradiation and hence unprecedented tailoring of optical and electrical characteristics with view of their uses in solar cells, gratings and nano‐ to micro‐scale devices. The surface morphology mainly consisted of triangular shaped nanoparticles which evolves into nanoscale ripple structures with an alignment parallel to the projection of ion beam direction. For the first time, we have demonstrated the fabrication of highly‐ordered ripple patterns with wavelength in visible region over SiC films and applicable as nano‐gratings. The underlying mechanism relies on the structural rearrangement due to transition of film microstructure from amorphous to mixed phase (crystalline, nano‐crystalline and amorphous) and lowering of C=C and C−C vibration modes by the heavier Si atoms. These nanostructured silicon carbide film shows unparalleled optical (energy gap decreases from 4.60±0.4 eV to 3.16±0.2 eV) & electrical characteristics (conductivity increases from 6.6×10−11 to 1.12×10−3 S/m with linear I−V behavior). Thus, we propose that ripple structured SiC films with wide band gap, high refractive index and high electrical conductivity with ohmic behaviour are promising candidates for application as window layer in solar cells and opto‐electronics.

Research of Gallium Nitride as Next-Generation Semiconductor

In today’s society, semiconductors have become an indispensable material in people’s lives, as they are closely related to daily needs such as internet access, power supply, and computing. The most widely used semiconductor material currently is silicon. Its cost advantage in the early stage made other semiconductor materials lag far behind. As semiconductor manufacturing has progressed to nanoscale and even 3-nanometer technology, problems with silicon semiconductors have become increasingly apparent. As the size of silicon transistors continues to shrink, quantum tunneling effects such as leakage current and gate leakage current have caused power consumption to increase continuously. Moreover, the silicon manufacturing process requires harsh conditions such as high vacuum, high temperature, and multiple steps, which increases the production cost and process complexity. Therefore, people have pinned their hopes on the next-generation semiconductor material, gallium nitride (GaN), as an alternative to silicon. Given its superior properties such as wider bandgap, higher electron mobility, and better thermal conductivity, gallium nitride (GaN) offers promising solutions to overcome the limitations of silicon-based semiconductors.

Controlled Spalling of 4H Silicon Carbide with Investigated Spin Coherence for Quantum Engineering Integration.

We detail scientific and engineering advances which enable the controlled spalling and layer transfer of single crystal 4H silicon carbide (4H-SiC) from bulk substrates. 4H-SiC's properties, including high thermal conductivity and a wide bandgap, make it an ideal semiconductor for power electronics. Moreover, 4H-SiC is an excellent host of solid-state atomic defect qubits for quantum computing and quantum networking. Because 4H-SiC substrates are expensive (due to long growth times and limited yield), techniques for removal and transfer of bulk-quality films are desirable for substrate reuse and integration of the separated films. In this work, we utilize updated approaches for stressor layer thickness control and spalling crack initiation to demonstrate controlled spalling of 4H-SiC, the highest fracture toughness crystal spalled to date. We achieve coherent spin control of neutral divacancy (VV0) qubit ensembles and measure a quasi-bulk spin T2 of 79.7 μs in the spalled films.