Band Gap Of Anatase TiO2 Research Articles

Discovery of the deep level related to hydrogen in anatase TiO2

Deep level transient spectroscopy was carried out to investigate the origin of the deep levels in the band gap of anatase TiO2. The epitaxial anatase-TiO2 film grown by metal-organic chemical vapor deposition possessed a deep level whose activation energy was 0.52eV. In contrast, this deep level at 0.5eV was not observed in the films grown by sputtering. However, by adding CH4 or H2 to the sputtering gas, the deep level at 0.5eV was observed in the sputter-grown films. Furthermore, the density of this deep level increased with increasing hydrogen gas, suggesting that this deep level originated from hydrogen doping.