Band-edge States Research Articles

Temperature Dependence of the Band Gap and Exciton Photoreflectance in Layered Gallium Telluride.

Among Group III-A metal monochalcogenides, gallium telluride (GaTe) is one of the less studied materials in terms of applications and optical characterization. For the temperature dependence of the energy transitions in GaTe, photoluminescence (PL) spectroscopy is commonly used, and photomodulated reflectance (PR) is yet to be reported. In this work, layered monoclinic GaTe single crystals were synthesized by the Bridgman technique and used for the investigation of the conduction band (CB) edge and free-exciton (FX) state transitions using PR spectroscopy. Both energy transitions (i.e., absorption and emission) were present at room temperature at 1.656 and 1.647 eV for the CB edge transition (≡Eg) and for the FX state transition, respectively, and show a blueshift at cryogenic temperatures that can be fitted with Varshni's equation. The estimated E(0) is 1.794 eV for Eg and 1.776 eV for the FX transitions at 0 K. The energy of the FX state transition is ∼18 meV lower than that of the band gap (Eg) at 0 K. PL spectroscopy confirms that the PL emission is only the FX state transition that is lower than Eg. The temperature-induced band-gap shifting is related to performing temperature-dependent photodetector experiments using various incident light wavelengths. At 80 K, the responsivity of the single-crystal GaTe photodetector to the energies of wavelengths (735 and 845 nm) smaller than Eg is relatively smaller than that to 630 nm incident light. This indicates that the low-temperature band-gap shift plays a role in applications of GaTe in optoelectronics.

One-Dimensional Excitonic Insulator of M6Te6 (M = Mo, W) Atomic Wires.

Coulomb attraction with weak screening can trigger spontaneous exciton formation and condensation, resulting in a strongly correlated many-body ground state, namely, the excitonic insulator. One-dimensional (1D) materials natively have ineffective dielectric screening. For the first time, we demonstrate the excitonic instability of single atomic wires of transition metal telluride M6Te6 (M = Mo, W), a family of 1D van der Waals (vdW) materials accessible in the laboratory. The many-body GW and Bethe-Salpeter equation scheme shows giant exciton binding energies up to 1.6 eV for these narrow-gap semiconductors, much exceeding their single-particle band gaps and implying a robust thermal-equilibrium exciton Bose-Einstein condensation with high critical temperatures. The excitonic instability of these single atomic wires is attributed to their small dielectric constant, same parity and ultraflat dispersion for the band edge states. Our work shed light in exploiting the strong excitonic effects in 1D vdW materials to realize macroscopic quantum phenomena.

Boosting quantum efficiency and suppressing self-absorption in CdS quantum dots through interface engineering.

Applications of photoluminescence (PL) from semiconductor quantum dots (QDs) have faced the dichotomy of excitonic emission being susceptible to self-absorption and shallow defects reducing quantum yield (QY) catastrophically, and doped emissions sacrificing the tunability of the emission wavelength via a quantum size effect, making it extremely challenging, if not impossible, to optimize all desirable properties simultaneously. Here we report a strategy that simultaneously optimizes all desirable PL properties in CdS QDs by leveraging interface engineering through the growth of two crystallographic phases, namely wurtzite and zinc blende phases, within individual QDs. These engineered interfaces result in sub-bandgap emissions via ultrafast energy transfer (∼780 fs) from band-edge states to interface states protected from surface defects, enhancing stability and prolonging the PL lifetime. These sub-bandgap emissions involving the interface states show a high Stokes shift, significantly reducing self-absorption while achieving near-ideal quantum efficiencies (> 90%); we also achieved extensive emission tunability by controlling the QD size without sacrificing efficiency. Theoretical calculations confirm that the interface states act as planar antennas for an efficient energy transfer from the bandgap states, while the extended nature of these states imparts tunability via quantum confinement effects, underpinning remarkable optical performance. This interface-engineered approach offers a powerful strategy to overcome limitations in QD-based optoelectronic applications.

Elimination of band-edge states by Frenkel-like defects: Application in inorganic compound α-Ag2S

Elimination of band-edge states by Frenkel-like defects: Application in inorganic compound α-Ag2S

Triplet Exciton Sensitization of Silicon Mediated by Defect States in Hafnium Oxynitride.

Singlet exciton fission has the potential to increase the efficiency of crystalline silicon solar cells beyond the conventional single junction limit. Perhaps the largest obstacle to achieving this enhancement is uncertainty about energy coupling mechanisms at the interfaces between silicon and exciton fission materials such as tetracene. Here, the previously reported silicon-hafnium oxynitride-tetracene structure is studied and a combination of magnetic-field-dependent silicon photoluminescence measurements and density functional theory calculations is used to probe the influence of the interlayer composition on the triplet transfer process across the hafnium oxynitride interlayer. It is found that hafnium oxide interlayers do not show triplet exciton sensitization of silicon, and that nitrogen content in hafnium oxynitride layers is correlated with enhanced sensitization. Calculation results reveal that defects in hafnium oxynitride interlayers with higher nitrogen content introduce states close to the band-edge of silicon, which can mediate the triplet exciton transfer process. Some defects introduce additional deleterious mid-gap states, which may explain observed silicon photoluminescence quenching. These results show that band-edge states can mediate the triplet exciton transfer process, potentially through a sequential charge transfer mechanism.

Luminescence Mechanisms of Quaternary Zn-Ag-In-S Nanocrystals: ZnS:Ag, In or AgInS2:Zn?

Highly emissive Zn-Ag-In-S nanocrystals have attracted attention as derivatives of I-III-VI2-type nanocrystals without the use of toxic elements. The wide tunability of their luminescence wavelengths is attributed to the controllable bandgap of the solid solution between ZnS and AgInS2. However, enhancement of the photoluminescence quantum yield (PL-QY) depending on the chemical composition has not been elucidated. Here, the luminescence mechanisms of Zn-Ag-In-S nanocrystals were studied from the perspective of ZnS doped with Ag and In, although previous research has proposed a hypothesis that Zn is a radiative recombination centre in the AgInS2 host. The Zn-Ag-In-S nanocrystals were synthesized by systematically varying the Zn, Ag, and In contents. The nanocrystals exhibit a structure in which a part of the Zn in the cubic ZnS is substituted with Ag and In. Luminescence was ascribed to a donor-acceptor pair (DAP) recombination between electrons trapped in In donors and holes trapped in Ag acceptors. The composition-dependent enhancement of PL-QYs was attributed to an increase in donor and acceptor concentrations. The DAP characteristics were maintained over a wide range of Ag and In contents because of the localized character of the band edge states dominated by Ag and In orbitals, as suggested formerly by simulation.

(Invited) A Polaron Paradigm for Perovskite Nanocrystal Emitting States

Perovskite nanocrystals (NCs) such as those made from CsPbBr3 have numerous uses. Most involve exploiting their light emission and are motivated by their defect tolerance and large, as-made emission quantum yields (QYs). For the latter, near unity QYs are possible. This leads to ready applications as light emitters but also intriguingly to possible material platforms for demonstrating semiconductor-based optical refrigeration. Absent, though, is a fundamental understanding of perovskite NC emitting states, central to these applications. Of particular note are observations of near-universal, size-, temperature-, and composition-dependent absorption/emission Stokes shifts where observed energy differences are those that separate absorbing and emitting states. Moreover, efficient (near-unity efficiency), photoluminescence up-conversion, induced by exciting NCs below gap, motivates better understanding the microscopic nature of perovskite band edge states. I will explain work we have done recently within the context of attempts to optically refrigerate a semiconductor. These studies now provide new insight into the band edge states of CsPbBr3 (and possibly CsPbX3) NCs. Starting with a microscopic mechanism for explaining how it is possible to obtain efficient, near-unity efficiency photoluminescence up-conversion to we extend the conclusions of these measurements to explain the origin of observed, size-dependent absorption/emission Stokes shifts. Here, despite some initial studies we and others have conducted, very little is known about their true origin. This is to be contrasted to more conventional NCs such as CdSe where band edge exciton fine structure quantitatively accounts for both global and resonant Stokes shifts, with emission emerging from a dark exciton. Although similar perovskite NC fine structure might account for their shifts, both theory and experiment predict bright/dark fine structure splittings easily an order of magnitude too small to account for experiment. We now propose that perovskite NC emitting states are polarons, which result from the lattice accommodation of photogenerated charges. Polaron binding energies and lifetimes are, in turn, suggested to be the origin of observed l-, T-, and composition-dependent absorption/emission Stokes shifts and excited state lifetimes. This represents a significant departure from more conventional descriptions of NC band edge states, which exclusively involve exciton fine structure and dark exciton emitting states.

Selection of dopants and doping sites in semiconductors: the case of AlN

The choices of proper dopants and doping sites significantly influence the doping efficiency. In this work, using doping in AlN as an example, we discuss how to choose dopants and doping sites in semiconductors to create shallow defect levels. By comparing the defect properties of CN, ON, MgAl, and SiAl in AlN and analyzing the pros and cons of different doping approaches from the aspects of size mismatch between dopant and host elements, electronegativity difference and perturbation to the band edge states after the substitution, we propose that MgAl and SiAl should be the best dopants and doping sites for p-type and n-type doping, respectively. Further first-principles calculations verify our predictions as these defects present lower formation energies and shallower defect levels. The defect charge distributions also show that the band edge states, which mainly consist of N- s and p orbitals, are less perturbed when Al is substituted, therefore, the derived defect states turn out to be delocalized, opposite to the situation when N is substituted. This approach of analyzing the band structure of the host material and choosing dopants and doping sites to minimize the perturbation on the host band structure is general and can provide reliable estimations for finding shallow defect levels in semiconductors.

Suppressed nonradiative electron–hole recombination in bismuth halide perovskite Cs3Bi2Cl9: Time domain ab initio analysis

Time-domain density functional theory, coupled with non-adiabatic molecular dynamics simulations, was employed to explore the defect characteristics and the associated nonradiative recombination processes in the bismuth halide perovskite Cs3Bi2Cl9. Our findings indicate that Cs3Bi2Cl9 inherently exhibits p-type semiconductor behavior, with vacancies at the Cs and Bi sites acting as predominant shallow acceptor defects. Although Cl vacancy and interstitial Cl defects introduce trap states within the bandgap of Cs3Bi2Cl9, the by-defect electron–hole (e-h) recombination is substantially impeded, which is attributed to the remarkable local structural deformations associated with the BiCl63− octahedral compression around the defects, which further results in decoupling between the defect state and the band edge state. As a result, the enhanced delocalization of defect states leads to a notably small wave function overlap between defect states and band edge states, as well as weak nonadiabatic couplings dominated by low-frequency phonons. Our study offers crucial insights into the mechanism of defect-mediated e-h recombination in bismuth-based perovskites and provides guidelines for designing efficient optoelectronic devices based on these materials.

Extended Surface Bands Enabled Lasing Emission and Wavelength Switch from Sulfur Quantum Dots.

The development of a lasing wavelength switch, particularly from a single inorganic gain material, is challenging but highly demanded for advanced photonics. Nonetheless, all current lasing emission of inorganic gain materials arises from band-edge states, and the inherent fixed bandgap limitation of the band-edge system leads to the inaccessibility of lasing wavelength switching from a single inorganic gain material. Here the realization of a single inorganic gain material-based lasing wavelength switch is reported by proposing an alternative lasing emission strategy, that is, lasing emission from surface gain. Previous efforts to achieve surface-gain-enabled lasing emission have been hindered by the limited gain volume provided by surface states due to the broad emission bandwidth and/or low emission efficiency. This challenge is overcome by introducing extended surface bands onto the surface of sulfur quantum dots. The extended surface bands contribute to a high photoluminescence quantum yield and narrow emission bandwidth, thereby providing sufficient gain volume and facilitating stimulated emission. When combined with whispering gallery mode microcavity, surface gain enabled lasing emission manifests an ultralow threshold of 8.3 µJcm-2. Remarkably, the reconfigurable perturbation to surface gain, facilitated by molecular affinity, allows for the realization of the lasing wavelength switch from a single inorganic gain material.

Ligand Controls Excited Charge Carrier Dynamics in Metal-Rich CdSe Quantum Dots: Computational Insights.

Small metal-rich semiconducting quantum dots (QDs) are promising for solid-state lighting and single-photon emission due to their highly tunable yet narrow emission line widths. Nonetheless, the anionic ligands commonly employed to passivate these QDs exert a substantial influence on the optoelectronic characteristics, primarily owing to strong electron-phonon interactions. In this work, we combine time-domain density functional theory and nonadiabatic molecular dynamics to investigate the excited charge carrier dynamics of Cd28Se17X22 QDs (X = HCOO-, OH-, Cl-, and SH-) at ambient conditions. These chemically distinct but regularly used molecular groups influence the dynamic surface-ligand interfacial interactions in Cd-rich QDs, drastically modifying their vibrational characteristics. The strong electron-phonon coupling leads to substantial transient variations at the band edge states. The strength of these interactions closely depends on the physicochemical characteristics of passivating ligands. Consequently, the ligands largely control the nonradiative recombination rates and emission characteristics in these QDs. Our simulations indicate that Cd28Se17(OH)22 has the fastest nonradiative recombination rate due to the strongest electron-phonon interactions. Conversely, QDs passivated with thiolate or chloride exhibit considerably longer carrier lifetimes and suppressed nonradiative processes. The ligand-controlled electron-phonon interactions further give rise to the broadest and narrowest intrinsic optical line widths for OH and Cl-passivated single QDs, respectively. Obtained computational insights lay the groundwork for designing appropriate passivating ligands on metal-rich QDs, making them suitable for a wide range of applications, from blue LEDs to quantum emitters.

(Invited) A Polaron Paradigm for Perovskite Nanocrystal Emitting States

Perovskite NCs such as CsPbBr3 have numerous uses. Most involve exploiting their light emission and are motivated by their defect tolerance and large, as-made emission quantum yields. Absent, though, is a fundamental understanding of perovskite NC emitting states, central to these applications. Of particular note are observations of near-universal, size-, temperature-, and composition-dependent absorption/emission Stokes shifts where observed energy differences are between absorbing and emitting states.Very little is known about the origin of these shifts. Moreover, little is known about the exact identity of the emitting state. This is to be contrasted to more conventional NCs such as CdSe where band edge exciton fine structure quantitatively accounts for both global and resonant Stokes shifts, with emission emerging from a dark exciton. Although similar perovskite NC fine structure might account for their shifts, both theory and experiment predict bright/dark fine structure splittings easily an order of magnitude too small to account for experiment.We now propose that perovskite NC emitting states are polarons, which result from the lattice accommodation of photogenerated charges. Polaron binding energies and lifetimes are, in turn, suggested to be the origin of observed size-, temperature-, and composition-dependent absorption/emission Stokes shifts and excited state lifetimes. This represents a significant departure from more conventional descriptions of NC band edge states, which exclusively involve exciton fine structure and dark exciton emitting states.

High-pressure hydrogen annealing improving the cryogenic operation of Si (110)-oriented n-MOSFETs

This study experimentally investigated the effects of an additional high-pressure hydrogen annealing (HPHA) on the cryogenic operation of Si (110)-oriented n-MOSFETs. The HPHA induced improvements in the subthreshold swing (SS), threshold voltage (V th), and ON current at cryogenic temperatures. Further, we analyzed the SS-drain current curves using the analytical model and concluded that HPHA reduced the density of the band-edge states. In addition, the analysis of the temperature-dependent V th supported this conclusion. Furthermore, effective mobility analysis results indicated that the improvement in the ON current was attributable to the improvement in the band-edge states. Therefore, we conclude that the HPHA process positively affected the Si/SiO2 interface and reduced the interface-related band-edge states, thereby improving the cryogenic operation of MOSFETs.

Circularly Polarized Luminescence Without External Magnetic Fields from Individual CsPbBr3 Perovskite Quantum Dots.

Lead halide perovskite quantum dots (QDs), the latest generation of the colloidal QD family, exhibit outstanding optical properties, which are now exploited as both classical and quantum light sources. Most of their rather exceptional properties are related to the peculiar exciton fine-structure of band-edge states, which can support unique bright triplet excitons. The degeneracy of the bright triplet excitons is lifted with energetic splitting in the order of millielectronvolts, which can be resolved by the photoluminescence (PL) measurements of single QDs at cryogenic temperatures. Each bright exciton fine-structure-state (FSS) exhibits a dominantly linear polarization, in line with several theoretical models based on the sole crystal field, exchange interaction, and shape anisotropy. Here, we show that in addition to a high degree of linear polarization, the individual exciton FSS can exhibit a non-negligible degree of circular polarization even without external magnetic fields by investigating the four Stokes parameters of the exciton fine-structure in individual CsPbBr3 QDs through Stokes polarimetric measurements. We observe a degree of circular polarization up to ∼38%, which could not be detected by using the conventional polarimetric technique. In addition, we found a consistent transition from left- to right-hand circular polarization within the fine-structure triplet manifold, which was observed in magnetic-field-dependent experiments. Our optical investigation provides deeper insights into the nature of the exciton fine structures and thereby drives the yet-incomplete understanding of the unique photophysical properties of this class of QDs for the benefit of future applications in chiral quantum optics.

Exciton Localization Modulated by Ultradeep Moiré Potential in Twisted Bilayer γ-Graphdiyne.

Twisted moiré superlattice is featured with its moiré potential energy, the depth of which renders an effective approach to strengthening the exciton-exciton interaction and exciton localization toward high-performance quantum photonic devices. However, it remains as a long-standing challenge to further push the limit of moiré potential depth. Herein, owing to the pz orbital induced band edge states enabled by the unique sp-C in bilayer γ-graphdiyne (GDY), an ultradeep moiré potential of ∼289 meV is yielded. After being twisted into the hole-to-hole layer stacking configuration, the interlayer coupling is substantially intensified to augment the lattice potential of bilayer GDY up to 475%. The presence of lateral constrained moiré potential shifts the spatial distribution of electrons and holes in excitons from the regular alternating mode to their respective separated and localized mode. According to the well-established wave function distribution of electrons contained in excitons, the AA-stacked site is identified to serve for exciton localization. This work extends the materials systems available for moiré superlattice design further to serial carbon allotropes featured with benzene ring-alkyne chain coupling, unlocking tremendous potential for twistronic-based quantum device applications.

Record-High Thermoelectric Performance in Al-Doped ZnO via Anderson Localization of Band Edge States.

Oxides are of interest for thermoelectrics due to their high thermal stability, chemical inertness, low cost, and eco-friendly constituting elements. Here, adopting a unique synthesis route via chemical co-precipitation at strongly alkaline conditions, one of the highest thermoelectric performances for ZnO ceramics ( 21.5µW cm-1 K-2 and 0.5 at 1100K in ) is achieved. These results are linked to a distinct modification of the electronic structure: charge carriers become trapped at the edge of the conduction band due to Anderson localization, evidenced by an anomalously low carrier mobility, and characteristic temperature and doping dependencies of charge transport. The bi-dimensional optimization of doping and carrier localization enable a simultaneous improvement of the Seebeck coefficient and electrical conductivity, opening a novel pathway to advance ZnOthermoelectrics.

Trap-Induced Long-Lived Internal Charge Separation in Sn-Doped MAPbBr3 Perovskite Films.

Sn-doped lead halide perovskites (LHPs) have attracted considerable attention for their lower bandgap and lower toxicity. While it is well-established that Sn doping easily introduces a lot of structural defects into LHP films, the extent to which these defects impact carrier dynamics has yet to be fully elucidated. Herein, we take Sn-doped MAPbBr3 films as an example to explore the influence of Sn doping on their carrier dynamics. The results show that Sn doping can simultaneously introduce many fillable electron traps and unfillable hole traps, consequently instigating an ultrafast carrier capture process. This further elicits long-lived internal charge separation between band edge and trap states or between two kinds of trap states, thereby enabling these carriers to persist for up to ∼2.6 μs. Our findings suggest that Sn doping potentially serves as an effective strategy to prolong the carrier lifetime in LHPs, which could pave the way for potential applications within Sn-based perovskites.

Prolonged Exciton Lifetime Is Achieved in Porphyrin Nanoring by Template Engineering: A Nonadiabatic Tight Binding Approach.

Porphyrin nanoring has been attracting immense attention due to its light harvesting capacity and potential applications in optical, catalysis, sensor, and electronic devices. We demonstrate by nonadiabatic quantum dynamics simulations that the photovoltaic efficiency can be enhanced by template engineering. Altering the hexadentate template (T6) with two tridentate templates (2T3) within the porphyrin ring (P6) cavity accelerated the electron transfer twice and suppressed the electron-hole recombination by nearly three times. The atomistic tight-binding simulation rationalized the dynamics by different localizations of charge of the band edge states, changes in nonadiabatic coupling, alteration in quantum coherence, and involvement of diverse electron-phonon vibrational modes. Further 2T3 templates more strongly hold the P6 ring than T6, reducing the structural fluctuation. As a result, the nonadiabatic coupling becomes weaker and suppresses the carrier recombination. Current atomistic simulation presents a template engineering strategy to enhance the exciton lifetime along with ultrafast charge separation, crucial factors for photovoltaic applications.

Broadband Emission Induced by Band-Edge Carrier Reconfiguration in 2D Hybrid Lead Halide Perovskites.

Broadband emission in hybrid lead halide perovskites (LHPs) has gained significant attention due to its potential applications in optoelectronic devices. The origin of this broadband emission is primarily attributed to the interactions between electrons and phonons. Most investigations have focused on the impact of structural characteristics of LHPs on broadband emission, while neglecting the role of electronic mobility. In this work, the study investigates the electronic origins of broadband emission in a family of 2D LHPs. Through spectroscopic experiments and density functional theory calculations, the study unveils that the electronic states of the organic ligands with conjugate effect in LHPs can extend to the band edges. These band-edge carriers are no longer localized only within the inorganic layers, leading to electronic coupling with molecular states in the barrier and giving rise to additional interactions with phonon modes, thereby resulting in broadband emission. The high-pressure photoluminescence measurements and theoretical calculations reveal that hydrostatic pressure can induce the reconfiguration of band-edge states of charge carriers, leading to different types of band alignment and achieving macroscopic control of carrier dynamics. The findings can provide valuable guidance for targeted synthesis of LHPs with broadband emission and corresponding design of state-of-the-art optoelectronic devices.

Exploring the microscopic effects of surrounding matrices (HfO2 and SiO2) on CdSe/ZnS and ZnS/CdSe cylindrical core/shell quantum dot for microelectronic transport applications

The primary goal of this study is to comprehensively describe the physical impact of surrounding dielectrix oxides on the electronic and optical properties of a confined electron within CdSe/ZnS and ZnS/CdSe cylindrical core/shell quantum dot (CCSQD). The effective mass approximation and the compact density matrix approach have been employed to compute the energy eigenvalues as well as the optical absorption coefficients (OACs) and the refractive index changes (RICs). Our calculations revealed that the presence of enveloping oxides acts as an additional confinement tool altering the electron energy spectrum. The ZnS/CdSe CCSQD exhibited more pronounced response and the exploitation of the local electric factor can effectively enhance the optical nonlinearity of OACs and RICs. We demonstrated that confined electrons within the ZnS/CdSe CCSQD are subjected to an intense interaction at the microscopic scale with the host medium. In addition, saturation effects in the nonlinear computed coefficients have been meticulously analyzed in terms of size and dielectric surroundings. Our findings demonstrated that electronic band edge states are heavily impacted by the sharp dielectric mismatch occurring at QD/matrix interface which could be exploited for the creation of novel optoelectronic devices in the future.