Band Edge Emission Of ZnO Research Articles

Sm doped ZnO-SnO2 nanocomposites with improved photo-degradation strength and antibacterial properties

In this work, we devoted our effort to synthesize rare-earth (Sm3+) doped ZnO-SnO2 nanocomposites by sol-gel method to address issues like wastewater treatment and minimization of bacterial infection. Successful formation of multi-phase nanocomposites of hexagonal ZnO and tetragonal SnO2 has been confirmed by x-ray diffraction (XRD) analysis. The effect of Sm doping is understood from the enhancement in ZnO grain growth and shift in diffraction peaks. The morphology study by FESEM reveals the variation in sample morphology with Sm doping with energy-dispersive analysis of x-ray (EDAX) study providing the confirmation on the existence of Sm ions in the crystal lattice of ZnO-SnO2 heterostructure. Transmission electron microscopic (TEM) study manifests the formation of two distinct types of particles (hexagonal & spherical) corresponding to ZnO and SnO2 which has been further clarified from the measurement of lattice spacing from the high-resolution TEM images and indexing of selected area electron diffraction (SAED) pattern. The near band edge emission (NBE) of ZnO is blue shifted along with the evolution of oxygen vacancy defects which induced new bands at 488 nm and 613 nm upon Sm doping. Further, intra-4f transitions of Sm3+ ions have also been observed at 560 nm, 590 nm and 638 nm linked to 4G5/2– 6HJ (J = 5/2, 7/2, 9/2) transitions. The Zn, Sn, O, and Sm elements are confirmed to exist in the nanocomposite according to the X-ray photoelectron spectroscopy (XPS) investigation which provided information on the chemical composition and electronic states of the material. Photocatalytic degradation study of toxic environmental dyes like methylene blue (MB), Congo red (CR) and methyl orange (MO) shows that Sm3+ ions in ZnO/SnO2 helps to enhance the degradation efficiency by the formation of Z-scheme heterojunctions between ZnO and SnO2. This allows the delay in recombination rate of the photoinduced electron/hole pairs. The antibacterial behavior of the prepared nanocomposites against E. Coli and S. Aureus has also been studied in detail which demonstrates improved antibacterial efficiency of the samples.

An environmentally friendly green synthesis of Co2+ and Mn2+ ion doped ZnO nanoparticles to improve solar cell efficiency

Global warming is a threat to human health in the context of increasing organic or inorganic pollutants, which are produced by various products. The “Green synthesis” method effectively eliminates toxic and/or harmful effects that arise due to the wet-chemical synthesis process. Different concentrations of Co2+ and Mn2+ ion doped ZnO-nanoparticles (NPs) were designed at a low temperature, about 70 °C by utilizing an eco-friendly sustainable method with dandelion leaf (DL) extract as a solvent and these biosynthesized NPs were annealed to grow the crystallinity enhancement. The confirmation of NPs crystal phase, phase purity, and grain size was performed by XRD, showing the hexagonal-Wurtzite phase structure. SEM and TEM images of the NPs demonstrated sub-100 nm spherical-shaped particles. Fourier transform infrared displays characteristics band about ∼523 cm–1 which corresponds to Zn–O tetrahedron asymmetric stretching vibrations. Both UV-Visible and luminescence studies confirmed the adjacent band edge emission of ZnO and successive incorporation of Co2+ and Mn2+ ion-doped ZnO host. For improving power conversion efficiency, the polycrystalline silicon solar cells (PSSCs), different layers of Co2+ and Mn2+ ion-doped ZnO-NPs coated on bare PSSCs are promising strategies. Additionally, solar cell efficiency decreases with further coating of NPs layers and/or thickness. Optimum solar cell efficiency was observed for 5 at% Mn2+ ion-doped ZnO-NPs with three layers. Finally, Radish and Cress plants are grown, using the biosynthesized ZnO-NPs supernatant from DL extract, which showed high environmental biocompatibility.

Localized surface plasmon and transferred electron enhanced UV emission of ZnO by periodical aluminum nanoparticle arrays

Periodical Al nanoparticle (NP) arrays were applied to enhance the ultraviolet (UV) light emission of ZnO by localized surface plasmon resonance (LSPR) effect and electron transfer mechanism. By applying corresponding anodic aluminum oxide (AAO) templates, periodical Al NP arrays with different diameters (D) and spaces (S) were manufactured by magnetron sputtering. Theoretical simulation by FDTD-solution indicates that local electric field around Al NPs is significantly enhanced, and the surface plasmon resonance wavelength is determined by D and S. Al NP arrays with D of 70 nm and S of 125 nm enhanced near band-edge emission of ZnO by 2.4 times. By adding Al NP arrays, the photonic lifetime of ZnO decreased by 0.09 ns according to time-resolved photoluminescence spectra, indicating that the enhancement in UV luminescence intensity of ZnO is ascribed to the coupling between surface plasmons of Al NPs and ZnO excitons. Deep-level emission spectra analysis indicates that there lies another mechanism of electron transfer from the Al NPs to surface plasmon resonance (SPR) level and then further to ZnO conduction band.

Investigations on the Structural and Optical Properties of electrospun ZnO – poly (styrene – co-methyl methacrylate) Nanofiber Composites

ABSTRACT The present study investigates the capability of novel copolymer poly(styrene – co – methyl methacrylate) to act as a carrier polymer for the fabrication of ZnO-based nanofiber composites. Electrospinning technique was used to fabricate both the virgin polymer and ZnO incorporated polymer nanofiber composites. The structural and optical characterizations were performed by SEM, EDAX, TEM, XRD, FTIR, UV, and PL techniques. SEM analysis showed that defect-free fibers in the nanometer range can be successfully fabricated by electrospinning technique. EDAX and TEM studies confirmed the presence of ZnO in the prepared nanocomposite fibers. FTIR studies showed the characteristic peak corresponding to Zn-O vibration at about 500 cm−1 thereby further confirming the presence of ZnO in the fibers. UV spectrum also gave peak at 370 nm, which is the characteristic peak of ZnO. PL studies further confirmed the presence of ZnO in the nanofibers by the existence of peaks associated with near band edge, blue, and green emission of ZnO.

Tunable emission in ZnO/Bi2O3 nanocomposites

The near band edge emission of ZnO is found to be tunable in ZnO/Bi2O3 nanocomposites via the changing accelerating voltages in cathodoluminescence test. Its intensity will be significantly increased when the accelerating voltage was larger than 10 KV, indicating a correspondingly change of dominant radioactive recombination in ZnO/Bi2O3 nanocomposites. It is suggested that the electron transfer between Bi2O3 and ZnO affects the dominant emission among the intrinsic emission of Bi2O3 and near band edge emission of ZnO. The higher accelerating voltage would be more likely to trigger the electron transfer and then enhance the near band emission of ZnO.

Conduction mechanisms in ZnO nanowires based Schottky diode grown under an electric field

We present a cathodoluminescence (CL) and electrical study of aligned ZnO nanowires based Schottky diodes synthesized by applying an AC electric field between two Au microcontacts. Our results reveal that the applied electric field aligns the ZnO nanowires between the electrodes and inhibits the formation of ZnO oxygen vacancies (VO). Local CL measurements of ZnO nanowires grown at different zones of the device show that the applied electric field inhibited the formation of oxygen vacancies (VO). Furthermore, CL spectra display an energy shift of the ZnO band edge emission, generated by changes in the relative intensity of two CL bands centered at 3.23 and 3.27 eV that correspond to the donor-acceptor pair and free electrons-acceptor transitions, respectively. We propose the formation of zinc vacancies (VZn) in nanowires that act as acceptor centers in the generation of these two electronic transitions. I-V curves acquired at room temperature reveal the photoresponse of the ZnO nanowires based Schottky diode exposed under UV (365 nm) illumination, exhibiting photocurrent intensities several times higher than that observed under dark conditions for applied bias lower than 1 V. The electrical conduction mechanisms in aligned ZnO nanowires of the device were tunneling and thermionic-emission for applied bias lower than 400 and 700 mV under dark and UV (365 nm) illumination conditions, respectively. For higher bias values, the device showed a conduction mechanism type field-emission.

Ultra-Violet Electroluminescence of ZnO Nanorods/MEH-PPV Heterojunctions by Optimizing Their Thickness and Using AZO as a Transparent Conductive Electrode

In this paper, a series of ITO/ZnO/ZnO nanorods/MEH-PPV/Al were prepared with different thicknesses of MEH-PPV that were changed from 15, 10 to 7 nm. The electric field in the devices was analyzed. An increase in the electric field on ZnO made hole injection easy and the electrons tunnel fast through thinner MEH-PPV to ZnO. This made the carriers prefer to recombine inside the ZnO layer, and the emission of ZnO was predominant under direct current (DC) bias. Furthermore, another device was fabricated with the structure of AZO (Al-doped ZnO)/ZnO/ZnO nanorods/MEH-PPV/Al. Ultra-violet (UV) electroluminescence (EL) at 387 nm from ZnO band edge emission was realized under DC bias. The turn-on voltage of the devices having AZO as the electrode is lower than that of ITO, and the EL power is enhanced. This work also studies the effect of inserting LiF underneath the Al electrode and above the layer of MEH-PPV. The LiF film inserted caused an obvious decrease in turn-on voltage of the devices and a pronounced increase in the EL power. The mechanism of electroluminescence enhancement is also discussed.

Elucidation of structural, morphological, optical and photoluminescence properties of single and (In, Ga) co-doped ZnO nanocrystalline thin films

Single and co-doped ZnO thin films are currently under intense investigation and development for optoelectronic applications. Here in this study, pristine, indium-doped (IZO), gallium-doped (GZO) and co-doped (IGZO) ZnO thin films were deposited on a glass substrate using radio frequency magnetron sputtering. A comparative study of all the films was carried out on the basis of their various properties. The effect of single and co-doping on the structural (X-ray diffraction (XRD) studies and Raman studies), morphological (field emission scanning electron microscopy and energy dispersive X-ray spectroscopy studies) and optical properties (ultraviolet–visible (UV–Vis) and photoluminescence (PL)) of the deposited films was investigated. X-ray photoelectron spectroscopy (XPS) characterization was employed to analyse the surface chemical composition and bonding of the deposited film. From the XRD patterns, it was found that the films were highly crystalline in nature and preferentially oriented along the (002) direction with a hexagonal wurtzite structure, consistent with Raman analysis. IGZO films displayed a dramatic improvement in the surface morphology as compared with the single dopant films due to the compensation effect of gallium and indium doping which reduced the lattice strain. The XPS analysis confirmed the presence of the oxidized dopants in each film. All thin films have shown excellent optical properties with more than 90% transmission in the visible range of light. The blue-shift of the absorption edge accompanied by the increase of the optical band gap confirmed the Burstein–Moss effect. The UV PL peak originated from the near band edge emission of crystalline ZnO, while the visible PL was associated with the radiative transition related to oxygen interstitial (Oi) defects in the ZnO structure.

Enhanced red photoluminescence in a nanocomposite thin film composed of Bi3.6Eu0.4Ti3O12 and Au‐decorated ZnO nanorods

AbstractThis paper firstly reports on a series of nanocomposite thin films composed of a ferroelectric Bi3.6Eu0.4Ti3O12 (BET) and Au‐decorated ZnO nanorods (Au‐ZnO), which are prepared by a ultraviolet‐induced hybrid chemical solution method. The effects of Au nanoparticles (NPs) and ZnO nanorods on the significantly red photoluminescence enhancement of Eu3+ ions are investigated. The results indicate that the larger near band edge (NBE) emission of ZnO by the SPR effect of Au NPs can make an energy transfer from ZnO to Eu3+ ions. Simultaneously, the depression of the deep‐level emission of ZnO can improve the monochromaticity in the visible range. Furthermore, the dielectric and ferroelectric properties of the thin films are also enhanced. The findings suggest that the nanocomposite thin films of a ferroelectric BET and Au‐ZnO could be used as a multifunctional material in the ferroelectric optoelectronic devices with bright light emitting.

Catalyst-Free Vertical ZnO-Nanotube Array Grown on p-GaN for UV-Light-Emitting Devices.

One-dimensional (1D) structures-based UV-light-emitting diode (LED) has immense potential for next-generation applications. However, several issues related to such devices must be resolved first, such as expensive material and growth methods, complicated fabrication process, efficiency droop, and unavoidable metal contamination due to metal catalyst that reduces device efficiency. To overcome these obstacles, we have developed a novel growth method for obtaining a high-quality hexagonal, well-defined, and vertical 1D Gd-doped n-ZnO nanotube (NT) array deposited on p-GaN films and other substrates by pulsed laser deposition. By adopting this approach, the desired high optical and structural quality is achieved without utilizing metal catalyst. Transmission electron microscopy measurements confirm that gadolinium dopants in the target form a transparent in situ interface layer to assist in vertical NT formation. Microphotoluminescence (PL) measurements of the NTs reveal an intense ZnO band edge emission without a defect band, indicating high quality. Carrier dynamic analysis via time-resolved PL confirms that the emission of n-ZnO NTs/p-GaN LED structure is dominated significantly by the radiative recombination process without efficiency droop when high carrier density is injected optically. We developed an electrically pumped UV Gd-doped ZnO NTs/GaN LED as a proof of concept, demonstrating its high internal quantum efficiency (>65%). The demonstrated performance of this cost-effective UV LED suggests its potential application in large-scale device production.

The violet luminescence band in ZnO and ZnO-Ag thin films

The stationary and time-resolved photoluminescence (PL) spectra of ZnO films deposited on different substrates were studied. The intensive violet (V) emission centred at about 415–420 nm was observed at room temperature in photoluminescence (PL) spectra of the ZnO films. We found that the V-band is observed in all types of film, regardless of the type of substrate or the presence of a dopant. The ratio of intensities of violet and ultraviolet (UV) bands depends on temperature and duration of the heat treatment. It is also shown that the V band is not associated exclusively with the film surface states; instead, it is inherent in both the surface and the entire volume. The V band is of a complex shape and consists of 3 sub-bands with the maxima at 408, 414, and 421 nm. The relative contribution of each of the sub-bands is determined by the technological conditions of the film preparation. Analysis of obtained data allows us to conclude that the V-band is due to intrinsic defects of the ZnO film and can be attributed to the near band edge emission of ZnO.

Vapor-Transport Synthesis and Annealing Study of Zn x Mg1-x O Nanowire Arrays for Selective, Solar-Blind UV-C Detection.

This work uniquely reports the synthesis of ZnxMg1–xO nanowires and submicron columns by utilizing a traditional carbothermal reduction process toward forming ZnO nanowire ultraviolet detectors, while simultaneously utilizing Mg3N2 as the source of Mg. To investigate the relationship between Mg content in the ZnO lattice and the cutoff wavelength for high spectral responsivity, the nanowires were annealed in a series of designed conditions, whereas chemical, nanostructural, and optoelectronic characteristics were compared before and after treatment. Postanneal scanning electron micrographs revealed a reduction of the average ensemble nanowire dimensions, which was correlated to the modification of ZnO lattice parameters stemming from Zn2+ dissociation and Mg2+ substitution (confirmed via Raman spectroscopy). The analysis of cathodoluminescence spectra revealed a blueshift of the peak alloy band-edge emission along with a redshift of the ZnO band-edge emission; and both were found to be strong functions of the annealing temperature. The conversion of Zn2SiO4 to Mg2SiO4 (in O2) and MgSiO3 (in Ar) was found to correspond to transformations (shifting and scaling) of high-energy luminescence peaks and was confirmed with X-ray diffraction analysis. The tunability of the cutoff photodetection wavelength was evaluated as the nanowire arrays exhibited selective absorption by retaining elevated conduction under high-energy UV-C irradiation after thermal treatment but exhibiting suppressed conductivity and a single order of magnitude reduction in both spectral responsivity (Rλ) and photoconductive gain (G) under UV-A illumination. Noise analysis revealed that the variation of detectivity (D*) depended on the regime of ultraviolet irradiation, and that these variations are related to thermal noise resulting from oxygen-related defects on both nanowire and substrate surfaces. These results suggest a minor design tradeoff between the noise characteristics of thermally treated ZnMgO nanowire array UV detectors and the tunability of their spectral sensitivity.

Rare earth Sm3+ co-doped AZO thin films for opto-electronic application prepared by spray pyrolysis

Samarium and aluminium co-doped ZnO (Sm:AZO) thin films were deposited on glass substrate by nebulizer spray pyrolysis technique with different Sm doping concentrations (0at%, 0.5at%, 1at% and 1.5at%). X-ray diffraction patterns confirm the polycrystalline nature of prepared films with hexagonal crystal structure. The average crystallite size was found to be reduced with Sm doping due to increased lattice defects. The Raman spectra exhibited characteristic ZnO wurtzite structure confirmed through the presence of E2-high mode peak at 438cm−1. The surface topology analysis revealed uniformly distributed wheat shaped particles without any pinholes for 1at% Sm doped ZnO film. Sm:AZO films displayed high transparency which is around 90% and the energy gap of ~ 3.30eV. Photoluminescence spectra of the thin films showed an UV emission peak at ~ 386nm corresponds to near band edge (NBE) emission of bulk ZnO. Room temperature Hall Effect measurement showed that all the prepared films possess n-type conducting nature with low electrical resistivity (ρ) 4.31 × 10−4Ωcm for 1at% Sm doped film. High figure of merit (ф) value of ~ 11.9 × 10−3 (Ω/cm)−1 was observed which indicates that the deposited films are highly suitable for opto-electronic device applications.

Production of acceptor complexes in sol-gel ZnO thin films by Sb doping

Sb doped ZnO nanofilms were successfully deposited on glass substrates via economical sol-gel method. X-ray diffraction (XRD) patterns revealed the hexagonal wurtzite structure of the elaborated films and showed that the crystal growth of the doped samples is (002) preferentially oriented. X-ray photoelectron analysis suggested the successful substitution of antimony in Zn sites. According to XPS analysis, the presence of an important antimony ions states in fivefold coordination suggested the formation of the complex (SbZn−2VZn) level. It was found that low Sb doping (less than 1%) leads to slight broadening of the band gap and blue shift of the near band edge (NBE) emission of ZnO. It indicates the reduction of the intrinsic defects density for this doping regime. However, for Sb doping more than 1%, the optical results revealed the creation of an important defects density such as stacking faults and zinc vacancies (VZn) that lead to the formation of acceptors levels. From photoluminescence (PL) at low temperature, the presence of acceptor-bound exciton A0X (152meV) has been demonstrated. Stacking faults in ZnO seems to contribute particularly to the PL signal through the 3.316eV emission attributed to a free electron-to-neutral acceptor (e, A°) transition with binding energy of about 137meV. The p-type conductivity of ZnO thin films is confirmed by Hall measurement.

Tuning the visible photoluminescence in Al doped ZnO thin film and its application in label-free glucose detection

Herein, we study the effect of thermal annealing on the structural and optical properties of Al doped ZnO (AZO) thin film and its application for the label-free detection of glucose based on fluorescence quenching. AZO thin films grown by radio frequency magnetron sputtering are annealed at different temperatures (250–650°C) in air environment. The post-growth annealing improves the structural quality of the AZO films, as confirmed from the X-ray diffraction, X-ray photoelectron spectroscopy and micro-Raman analyses. The as-grown and annealed samples show strong photoluminescence (PL) in the UV (∼3.33eV) and visible-NIR (1.6–2.2eV). The UV PL peak is originated from the near band edge emission of crystalline ZnO, while the broad visible-NIR PL is associated with the radiative transition related to oxygen interstitial (Oi) defects in the ZnO structure. The PL peak intensity is strongly enhanced after annealing due to the partial removal of non-radiative defects. The high intensity visible-NIR PL of the annealed samples is used for the label-free enzyme-based detection of glucose with the help of glucose oxidase based on PL quenching via electron transfer mechanism. Our AZO thin films can efficiently detect ∼20μM concentration of glucose in presence of glucose oxidase (GOx). We have attempted to quantify the nature of PL quenching based on the Stern-Volmer plot and explained the quenching mechanism as collisional quenching due to charge transfer in presence of a quencher. The Stern-Volmer plot of PL quenching of AZO thin film reveals the linear relationship between the quenching effect and the glucose concentration. Higher sensitivity of the sensor can be achieved by tuning the structure and doping density of the AZO films. This report opens up avenues for the non-destructive, label-free detection of biomolecules with high sensitivity using a low cost ZnO thin film.

Influence of Al capping on the photoluminescence of ZnO

The low temperature photoluminescence (PL) of ZnO and Al-capped ZnO have been investigated to reveal the influence of Al capping on optical properties of ZnO. Near band edge (NBE) emission of Al-capped ZnO presents an enhancement and negative thermal quenching temperature dependence compared with bare ZnO due to the resonant coupling between excitons in ZnO and surface plasmons (SPs) of Al nanoparticles. SPs have a prominent influence on less localized excitons. This feature of SPs together, with the decreased non-radiative recombination rate, gives rise to the increasing enhancement ratio of NBE emission after Al capping with increasing temperature.

UV-visible broad spectrum light emitting device of ZnO/MgO/ITO structure

Xenon gas and mercury vapor based broad spectrum light sources have wide application, however, are hard to compact. On the contrary, LEDs are easy for compaction, but are hard to emit a broad spectrum. In this work, we demonstrate a simple phosphor free LED structure of ZnO/MgO/ITO, of which the spectrum covers the range from 300 to 650nm. The device was fabricated on commercially available ITO substrate, and the ZnO/MgO structure was successively grown by MOCVD method, of which the morphology, crystallinity and optical quality were characterized. A thin MgZnO layer with graded composition is believed to form through the miscibility of MgO and ZnO during the initial growth stage of ZnO. The active region of the device includes the thin MgZnO layer and part of the subsequent grown ZnO layer. The light with wavelength shorter than ~360nm is attributed to the near band edge emission of the MgZnO layer. And the near band edge emission and deep level emissions of ZnO contribute to the spectrum from ~360 to 650nm. The working mechanism of the device is discussed mainly based on the energy band diagram.

Structural, optical and photocatalytic properties of graphene-ZnO nanocomposites for varied compositions

Graphene-ZnO nanocomposites (GZ) were prepared with different concentrations of ZnO by chemical method. Structural analysis by x-ray diffraction showed a hexagonal wurtzite phase of ZnO and Raman spectroscopy showed the formation of graphene. Shape of ZnO was found to be varied from sphere to rod with the increasing ZnO composition. Optical absorption at 369nm (Eg=3.36eV) was corresponding to the band edge emission of ZnO. Compared to pure ZnO, photoluminescence (PL) intensity of the nanocomposites had decreased drastically, due to quenching of photoemission, in the presence of graphene. The time resolved PL decay followed a triexponential behavior with a maximum lifetime of 27.97ns. The BET surface area was in the range from 13 to 123m2/g. Photocatalytic degradation study on methyl orange under UV light and Sun light showed a maximum degradation of 97.1% and 98.6% respectively. It was observed that the nanocomposites with optimum value of lifetime and surface area had shown the maximum degradation rate.

Optical spectroscopy characterization of Cu doped ZnO nano- and microstructures grown by vapor-solid method

Cu doped ZnO micro- and nanostructures have been grown by a vapor-solid method. The influence on the morphology of the structures of the precursor used for both host and dopant has been investigated. The density and uniformity of the structures is higher when ZnS is used for host precursor. Regarding the dopant incorporation, different degree of segregation is observed depending on the precursor used (metallic Cu or Copper oxides). The dopant distribution has been studied by X-ray Microanalysis, (EDS). The luminescence properties have been studied by cathode- and photoluminescence techniques. The ZnO band edge emission is quenched when Cu is incorporated to the host while defect and Cu related bands are still present. Moreover, a modification of the spatial distribution of the luminescence centres due to segregation is also observed. Raman spectroscopy and X ray diffraction have been also used to assess the properties of the samples grown.

Thermoluminescence studies of γ-irradiated ZnO:Mg2+ nanoparticles

Pure and Mg2+ doped ZnO nanoparticles are synthesized by solution combustion method. X-ray diffraction studies of the samples confirm hexagonal phase. Crystallite size is calculated using Scherer formula and found to be ∼30nm for undoped ZnO and 34–38nm for Mg2+ doped ZnO. A broad PL emission in the range 400–600nm with peaks at 400, 450, 468, 483, 492, 517, 553nm are observed in both pure and Mg2+ doped nanoparticles. Near band edge emission of ZnO is observed at 400nm. The broad band emissions are due to surface defects. PL emission intensity is found to increase with Mg2+ concentration up to 1.5mol% and then decreases due to concentration quenching. Samples are irradiated with γ-rays in a dose range 0.05–8kGy. Gamma irradiation doesn’t affect PL properties. Undoped samples exhibit unstructured low intense TL glow with peak at 720K. Whereas Mg2+ doped samples exhibit well structured TL glow curves with peak at ∼618K. TL glow peak intensity of Mg2+ doped samples increases with Mg2+ concentration up to 2mol%, thereafter decreases. TL curves of Mg2+ (2mol%) doped ZnO exhibit two glows, a high intense peak at 618K and a weak one with peak at ∼485K. TL intensity of Mg2+ (2mol%) doped ZnO samples increases with gamma dose up to 1kGy and then decreases. Kinetic parameters of TL glows are calculated by deconvolution technique. Activation energy and frequency factor are found to be 1.5eV and 3.38×1011s−1 respectively.