A thin-film microwave limiter has been developed through a joint partnership between researchers in China and America. This limiter is fabricated using thin-film hybrid integrated circuit technology (TFHICT) on a ceramic substrate with high relative permittivity. The result is a compact circuit, with no PbSn welding points, ensuring high reliability. The thin film microwave limiter is far more compact than can be achieved with thick film technology, as this size comparison shows Limiters are used to protect weak components, such as low noise amplifiers, from stray signals. The power transfer characteristic behaves somewhat like an amplifier with low loss rather than gain. Above critical input power, the output can behave quite strangely, often being described as having a “kink” in it. This circuit technology brings with it the advantage of miniaturisation without compromising reliability. This allows it to be deployed in areas where there are volume restrictions, such as satellite applications. Where traditional thick-film technology employs a chemical solvent etching procedure, metal thin-films use vacuum deposition technology to ensure higher processing precision. This precision is achieved by directly integrating some passive circuits, thin-film resistors, and planar spiral inductors into the substrate itself. Other alternatives, such as advanced monolithic microwave integratedcircuit (MMIC) and low temperature co-fired ceramic (LTCC) technology, require greater expenditure and take far longer to manufacture. Metal thin-films, therefore, are cheaper, more precise, can be produced more quickly, and offer greater flexibility for the engineers. With the rapid development of thin-film hybrid integrated circuit technology, the resulting microwave limiters that can be assembled have become a key component in the front-end of receivers because of its compact size, excellent performance and high reliability. The balanced limiter circuit configuration could be easily expanded to perform a variety of functions, such as radar duplexers, and multi-function circuits used as balanced limiter low-noise amplifiers. It is practical to produce these passive duplexers as they use a common antenna for transmitting and receiving. The balanced microwave limiter could isolate the receiver from the transmitter when producing high-power transmissions, using the microwave conductivity modulation effect of the PIN diodes. Looking further ahead, the team anticipate that metal TFHICT could be utilised in three-dimensional, multi-functional circuits suitable for millimetre wave and terahertz frequencies. This would satisfy the more stringent requirements for the next generation of radar, satellite communication, and of other wireless fields. This work is actually already part of real world engineering, and it is a crucial circuit in the front-end radar receiver systems. The fabricated thin film balanced low noise amplifier with the limiter embedded