In this paper an overview is given on the epitaxial growth of SiC in a vertical CVD reactor. Results concerning impurity incorporation and ways to achieve background doping levels as low as 1014 cm—3 are discussed. Precise control of the C/Si ratio in the gas phase, which is easily achieved in the described reactor, and the use of reduced pressure, lead to good control of dopant incorporation over more than three orders of magnitude, and smooth surface morphology at growth rates higher than 5 μm/h. Doping variations <±12% across 35 mm wafers can routinely be obtained. The quality of the epilayers is proven by electrical brakdown fields as high as 2×106 V/cm at NA — ND = 5×10—15 cm—3 achieved in both pn and Schottky diodes and an electron mobility higher than 700 cm2/Vs at 300 K (4H-SiC) estimated from the on-resistance of these test devices. Another important experimental boundary condition, the influence of the gas composition at the end of the epitaxial growth process on the surface properties of the epitaxial layer, is described. It will be shown that surfaces nearly resistant against oxidation can be generated in a hydrogen free atmosphere. As a second main topic of this paper, results of an elaborate numerical process simulation will be described including both fluid mechanical and chemical behavior. The influence of the main process parameters like total flow, chamber pressure, and rotation speed on the stability of the flow was investigated. The results achieved are compared with experimental observations showing excellent agreement. The experimental observation of an irradiant layer in the gas phase in front of the wafer under typical process conditions is explained with the help of the numerical model. The usefulness of this specific feature for the optimization of process conditions is discussed.