AZ1350J Photoresist Research Articles

Determination of secondary electron spectra from insulators

A new technique for the determination of secondary electron (SE) spectra of insulators in a scanning electron microscope environment is presented. It is based on a capacitatively coupled charge measurement by subjecting the insulating film to a controlled pulsed electron beam. With the use of a planar grid analyzer configuration, an algorithm is used to estimate the SE spectrum based on normalized values of the S-curve obtained. Secondary electron spectra from several insulating materials employed in integrated circuit manufacturing, including silicon nitride (Si3N4), AZ 1350J photoresist, and pyralin polyimide, have been measured.

Determination of secondary electron yield from insulators due to a low-kV electron beam

A technique for the accurate determination of secondary electron (SE) yield of insulators due to low-kV electron beam is presented. It is based on a capacitatively coupled charge measurement by subjecting the insulating film to a controlled pulsed electron beam in a scanning electron microscope. SE emissions from several insulating materials employed in integrated circuit manufacturing including wet and sputtered silicon dioxide (SiO2), polyimide, and AZ1350J photoresist, have been investigated for a range of primary energies between 0.5 and 2.5 keV. Comparisons are made between experimental data for SiO2 and polyimide with previous results. The dependence of SE emission on incidence angle and topography for SiO2 was investigated. Experimental results indicate that the dependence of SE emission on surface tilt for SiO2 is in good agreement with the power law for tilt angles below 70°, while emission saturation is observed at higher tilt angles. The SE yield from sputtered oxide was found to be higher than that of wet oxide, which is related to differences in topography between the two materials.

Polymer thermal stability enhancement induced by high energy ion beam bombardment

The thermal stability of high energy Ne, He, and B irradiated AZ1350-J photoresist films has been investigated via the Rutherford Backscattering Technique (RBS). We find that as consequence of the irradiations the temperature at which the photoresist starts to decompose raises from 400°C to 450°C. This feature is achieved only when a threshold fluence is implanted, being this value function of the implanted ion. However, the corresponding threshold energy density transfer is similar for all the ions and of the order of 10 eV/Å 3.

Polymer thermal protection induced by ion beam irradiation

The thermal stability of F, Ne, He, and B implanted/irradiated AZ1350-J photoresist films has been investigated via the Rutherford backscattering (RBS) technique. We find that both shallow and deep implantations raise the temperature at which the photoresist starts to decompose (from 400°C to 450°C). It is shown that radiation rather than chemical effects are responsible for the improvement in the thermal behavior of the implanted/irradiated films. In addition it is observed that the deep implantations give better results as compared with the shallow ones. In fact after a high energy Ne, B or He irradiation fluence was reached, no material loss was observed when the samples were further submitted to 450°C annealings. This is at variance with what was observed with shallow F and Ne implantations, where only partial protection was achieved.

Improving the Thermal Stability of Photoresist Films by Ion Beam Irradiation

ABSTRACTThe thermal stability of ion irradiated 1.7 μm thick AZ-1350J photoresist films was investigated using the RBS and ERDA techniques to measure the composition of the irradiated and annealed films. The films have been irradiated with He, N and Ar ions at energies from 380 to 760 keV and fluences between 2 × 1015 and 1016 ions cm−2. A considerable increase in the thermal stability of the He irradiated film is observed from ≈200°C – when the non-irradiated film starts to decompose – to 400°C after the irradiation. The FTIR spectroscopy and the SEM observations were used to study the chemical structural changes and the surface morphology of the irradiated samples. The results are discussed in terms of the energy density deposited by the ions, the large loss of H during irradiation, and the resulting increase in cross-linking density.

Reactive ion etching of PECVD silicon nitride in SF 6 plasma

The reactive ion etching of PECVD silicon nitride thin films has been investigated using SF 6 plasma. Effects of variations of process parameters such as pressure (50–350 mTorr), RF power (50–250 W), gas flow rate (3–130 sccm) and additions of O 2 and He (0–50%) in SF 6, on the PECVD silicon nitride etch rate and selectivity to the AZ 1350J photoresist were examined. An etch rate of 1 μm/min has been obtained under the condition of 150 mTorr, 100 W and 60 sccm. Experimental results also indicated a maximum etch rate at approximately 30% O 2 while addition of He showed only dilution effect. A nitride/photoresist selectivity ranging from 1 to 3:1 has been obtained.

Laser-Assisted Selective Chemical Etching of GaAs/AlGaAs Layered Structures

AbstractLaser-assisted etching techniques have been developed for alloyselective patterning of GaAs/AlGaAs layered structures. Such techniques are potentially very important for the fabrication of a large variety of heterostructure devices. Studies have been carried out with several liquid etchants and have utilized a CW dye laser tuned to a wavelength above the band edge of GaAs, but below that of the AlGaAs layer (e.g., λ = 0.85 μm) to etch GaAs. Using the laser focal spot to spatially define the etched area, features exhibiting very smooth interface surfaces were produced in MBE-grown epitaxial layers. A high degree of selectivity for GaAs over A1(0.4)Ga(0.6)As, low background etch rates, and high feature etch rates (> 2 μm/min) were demonstrated. Patterned etching with AZ 1350J photoresist exhibited good pattern resolution and nearly vertical sidewall profiles. Etchant mixtures of dilute H2S04:H202:H20 and HNO3:H20 produced qualitatively different results, with the HNO3:H20 mixture exhibiting a tendency to leave a residual GaAs layer at the interface, even for long etch times. Surface analysis techniques, including Auger spectroscopy, profilometry, and interference contrast microscopy have been used to characterize the etched structures, and a simplified analytical model has been used to predict the qualitative dependence of etch rate on layer thickness.

Correlation of the chemical and electrical properties of AZ1350J photoresist solution

The dielectric properties of the photoresist AZ1350J in diethyloxalate solution have been measured by a capacitance technique. Measurements of permittivity (Er) at different dilutions are seen to obey the logarithmic law of mixing, while the temperature dependence curve predicts a change in phase of the resist at approximately 66 °C. Polarization measurement of the mixtures shows a relaxation type of orientational polarization and a decreasing value of polarization on UV light irradiation, confirming the structural change in the photoresist.

LiNbO<inf>3</inf>waveguide modulator with 1.2 µm thick electrodes fabricated by lift-off technique

In order to make efficient high-frequency electrooptic modulators, the microwave loss in the electrodes has to be minimized. A lift-off technique using chlorobenzene to harden the top of AZ1350-J photoresist was adopted to fabricate 1.2 μm thick metal electrodes. A 1 cm long, 15 μm wide strip electrode has a dc resistance of 11 Ω, which is substantially less than that of the 2000 A thick electrodes routinely fabricated. A 1 cm long traveling-wave phase modulator consisting of a single waveguide was tested. The measured -3 dB bandwidth is 3.8 GHz.

Monolithic microwave amplifiers formed by ion implantation into LEC gallium arsenide substrates

A fabrication procedure for broad-band monolithic power GaAs integrated circuits has been demonstrated which includes formation of via holes through the 100-µm-thick GaAs substrate. A selective implant of29Si ions into the GaAs substrate is used to dope the FET channel region to 1.2 × 1017cm-3. The ohmic contacts are AuGe/Ni/Pt and the gates are Ti/Pt/Au. A 1.5-µm-thick circuit pattern is achieved using metal rejection assited by chlorobenzene treatment of AZ1350J photoresist. Using undoped Czochralski wafers of GaAs pulled from a pyrolytic boron nitride crucible, integrated amplifiers have been produced which deliver 28 ± 0.7 dBm from 5.7 to 11 GHz. These chips are 2 mm × 4.75 mm × 0.1 mm thick.

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A new taper etching technique for SnO2 transparent conductive films has been successfully developed. The AZ-1350J photoresist patterns with a convex-lens-like cross-section are employed asthe mask for rf sputter etching of the SnO2 films. The primary rectangular cross-section of the photoresist pattern is rounded by a post exposure of UV light and a heat treatment. The taper angle of the SnO2 pattern is controlled by changing the ratio of the sputter etching rate of the AZ-1350J photoresist to the SnO2 film. This ratio is controlled by oxygen pressure in the atmosphere of the sputtering chamber. The lowest angle of 4 degrees is obtained at 2% oxygen in argon.The taper-etched SnO2 film pattern is used as signal electrodes of a trielectrode pickup tube using Se-Te-As chalcogenide glass photoconductor.

Negative Patterning of AZ1350J by Electron-Beam Desensitization of Photo-Sensitive Compound

The discovery of a unique property of AZ1350J photoresist under electron-beam exposure and its successful application to negative patterning of AZ1350J are reported. It is found that an electron-beam desensitizes AZ1350J to the succeeding UV-light exposure and makes the resist insoluble to basic developers. This new mechanism, named ELDER (ELectron-beam DEsensitization of photoResist), is used to obtain negative resist images of AZ1350J. These images have a very high resolution down to 0.75 µm lines and spaces, as well as excellent dry-etch resistance. Aluminum wiring patterns of MOS LSIs are successfully dry-etched with a mask of negative AZ1350J images. The ELDER process technology should prove useful for electron-beam direct fabrication in the submicron range.

Spectral Sensitivity and Linearity of Shipley AZ-1350J Photoresist

Get PDF Email Share Share with Facebook Tweet This Post on reddit Share with LinkedIn Add to CiteULike Add to Mendeley Add to BibSonomy Get Citation Copy Citation Text S. L. Norman and M. P. Singh, "Spectral Sensitivity and Linearity of Shipley AZ-1350J Photoresist," Appl. Opt. 14, 818-820 (1975) Export Citation BibTex Endnote (RIS) HTML Plain Text Citation alert Save article