Abstract
A new technique for the determination of secondary electron (SE) spectra of insulators in a scanning electron microscope environment is presented. It is based on a capacitatively coupled charge measurement by subjecting the insulating film to a controlled pulsed electron beam. With the use of a planar grid analyzer configuration, an algorithm is used to estimate the SE spectrum based on normalized values of the S-curve obtained. Secondary electron spectra from several insulating materials employed in integrated circuit manufacturing, including silicon nitride (Si3N4), AZ 1350J photoresist, and pyralin polyimide, have been measured.
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