Average Doping Concentration Research Articles

The Influence of the Growth Process on Doping Profile and Mobility Profile during LPE of the Pseudobinary Sn ‐ GaAs System

With heavily Sn‐doped layers grown from liquid phase epitaxy (LPE) it is demonstrated that the profiles of the carrier concentration and the total concentration reflect the respective growth processes. This is derived from the temporally varying growth rate and from an experimentally verified relation between the average growth rate and the average doping concentration. The mobility profile is correspondingly influenced. Initial supersaturation of the melt and a fast cooling rate of the process are best for obtaining a homogeneous doping profile.