Various emerging technologies investigate the ability to sense and detect light in the shortwave infrared spectrum (wavelengths between 1100nm and 2500nm). Autonomous cars, smart agriculture, eye tracking for AR and VR applications, face recognition, surveillance, machine vision and new microscopy techniques can take advantage of additional information found in SWIR.Thin film photodetectors, based on quantum dot photodiodes, show promise in bringing SWIR sensing to the mass markets by offering simpler and cheaper processes and higher resolution than existing technologies. However, the prevalent use of lead (Pb), Cadmium (Cd) and mercury (Hg) in existing quantum dot thin film photodetectors poses safety, environmental and regulatory challenges, limiting their widespread adoption.InAs quantum dots emerge as a leading alternative, offering a heavy metal free solution and paving the way for the next generation of SWIR imaging devices. Nevertheless, a nuanced understanding of InAs-based devices is imperative for unlocking their full potential and optimizing performance. This work presents a meticulous and extensive analysis conducted in our laboratories, encompassing both devices and materials. The resulting insights empower an agile and informed redesign of the photodiode, showcasing tangible improvements in performance metrics.
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