Low-temperature silicon dioxide (SiO 2) films were grown on silicon germanium (SiGe) surfaces using the liquid-phase deposition (LPD) method. The growth solutions of LPD-SiO 2 are hydrofluorosilicic acid (H 2SiF 6) and boric acid (H 3BO 3). It was found that the growth rate increases with increasing temperature and concentration of H 3BO 3. The Auger electron spectroscopy profile shows that no pileup of Ge atoms occurs at the interface of SiO 2/SiGe after the LPD-SiO 2 growth. Al/LPD-SiO 2/p-SiGe MOS capacitors were prepared to determine capacitance–voltage ( C– V) and current–voltage ( I– V) characteristics. In our experiments, a low leakage current density of 8.69 × 10 −9 A/cm 2 under a 2 MV/cm electric field was observed. Such a value is much smaller than those of plasma- and thermal-oxides as a result of no plasma damage and a lower growth temperature. Moreover, lower oxide charges and interface charge densities of 3.82 × 10 10 cm −2 and 1.12 × 10 11 eV −1 cm −2, respectively, were achieved in our LPD-SiO 2 compared to direct photochemical-vapor-deposition-SiO 2.