Quantum anomalous Hall (QAH) insulators are an ideal platform for developing topological electronic devices, but their low observation temperature limits the applications. In this study, based on first-principles calculations, monolayer Ti2Sb2KRb and Ti2Bi2NaK are demonstrated to be QAH insulators with topological gaps 43 and 57 meV, respectively. Their Chern numbers are calculated to be C=−2. The study of electronic structures indicates that the ferromagnetic topological property is induced by the energy band inversion of dxy and dx2−y2 orbitals for Ti atoms near the Dirac cone. Both monolayer Ti2Sb2KRb and Ti2Bi2NaK exhibit a perpendicular magnetic anisotropy, and their Curie temperatures are estimated to be 480 and 478 K, respectively. The ferromagnetic coupling is induced by the small crystal-field splitting energy caused by Sb and Bi atom's large radius. Our study suggests that monolayer Ti2Sb2KRb and Ti2Bi2NaK are promising candidates for room temperature QAH insulators.