Problem statement. Development of methods for producing large-area isolated graphene under controlled conditions is an important task, which is primarily interested in the unique physical and chemical properties of graphene: high electrical and thermal conductivity, dependence of electronic characteristics on the presence of attached different radicals on the graphene surface, adjustable band gap, and high carrier mobility. Goal. It is necessary to develop regimes for producing thin graphite films on a dielectric substrate by annealing the structure (0001)Al2O3/(111)Ni/ta-C with a minimum density of defects in the crystal structure by the heteroepitaxial synthesis method. Results. The method of obtaining thin graphite films on a dielectric substrate by annealing the structure (0001)Al2O3/(111)Ni/ta-C has been tested. The method is based on the catalytic decomposition of hydrocarbons on the single crystal surface of a metal catalyst, diffusion and crystallization of carbon on the reverse side of the metal film. The surface of the obtained carbon films with a thickness significantly exceeding one atomic layer is uniform within the 5x5 mm samples. Varying the annealing temperature and time, as well as the initial amount of carbon, will further allow to control the amount of carbon involved in the formation of atomic layers. Practical significance. The described method is promising for developing a scalable technological process for obtaining largearea graphene on a dielectric substrate.