This paper presents analysis and design of a new miniaturized advanced rectenna integrated circuit for RF energy harvesting applications. The rectenna circuits consist of (antenna, rectifying circuit) and matching network connected together. The 1 × 4.5 mm2 planar L-shaped dipole antenna implanted inside human ‘s body arm for operation in ISM dual-bands like 1.5GHz and 5.8GHz. The new device quantum well asymmetric spacer tunnel layer (QW-ASPAT) rectifier diodes based on GaAs and InGaAs platforms have been used for the mesa size area of 10 × 10 μm2. The DC, RF, and C-V characteristics of the new rectifier diodes were performed and modelled by using SILVACO ATLAS software. The highest extracted curvature coefficient, kv value of the both QW-ASPAT devices at zero bias was about 33 V−1 compared with the standard structures was 13 V−1. The cut off frequency of the proposed QW-GaAs and QW-InGaAs devices are 26GHz and 46GHz respectively. The fully integrated rectenna circuit was performed by Advanced Design System (ADS) software. The maximum DC output voltage and power of the proposed rectenna system were 0.7 V,1.5 V and 167 μw, 325 μw when used single, and double stage voltage doubler rectifiers respectively at the input RF power of 0 dBm.