At-wavelength Characterization Research Articles

Structured illumination ptychography and at-wavelength characterization with an EUV diffuser at 13.5 nm wavelength.

Structured illumination is essential for high-performance ptychography. Especially in the extreme ultraviolet (EUV) range, where reflective optics are prevalent, the generation of structured beams is challenging and, so far, mostly amplitude-only masks have been used. In this study, we generate a highly structured beam using a phase-shifting diffuser optimized for 13.5 nm wavelength and apply this beam to EUV ptychography. This tailored illumination significantly enhances the quality and resolution of the ptychography reconstructions. In particular, when utilizing the full dynamics range of the detector, the resolution has been improved from 125 nm, when using an unstructured beam, to 34 nm. Further, ptychography enables the quantitative measurement of both the amplitude and phase of the EUV diffuser at 13.5 nm wavelength. This capability allows us to evaluate the influence of imperfections and contaminations on its "at wavelength" performance, paving the way for advanced EUV metrology applications and highlighting its importance for future developments in nanolithography and related fields.

At-wavelength characterization of X-ray wavefronts in Bragg diffraction from crystals.

The advent of next-generation synchrotron radiation sources and X-ray free-electron lasers calls for high-quality Bragg-diffraction crystal optics to preserve the X-ray beam coherence and wavefront. This requirement brings new challenges in characterizing crystals in Bragg diffraction in terms of Bragg-plane height errors and wavefront phase distortions. Here, a quantitative methodology to characterize crystal optics using a state-of-the-art at-wavelength wavefront sensing technique and statistical analysis is proposed. The method was tested at the 1-BM-B optics testing beamline at the Advanced Photon Source for measuring silicon and diamond crystals in a self-referencing single-crystal mode and an absolute double-crystal mode. The phase error sensitivity of the technique is demonstrated to be at the λ/100 level required by most applications, such as the characterization of diamond crystals for cavity-based X-ray free-electron lasers.

Ptychographic X-ray speckle tracking with multi-layer Laue lens systems.

The ever-increasing brightness of synchrotron radiation sources demands improved X-ray optics to utilize their capability for imaging and probing biological cells, nano-devices and functional matter on the nanometre scale with chemical sensitivity. Hard X-rays are ideal for high-resolution imaging and spectroscopic applications owing to their short wavelength, high penetrating power and chemical sensitivity. The penetrating power that makes X-rays useful for imaging also makes focusing them technologically challenging. Recent developments in layer deposition techniques have enabled the fabrication of a series of highly focusing X-ray lenses, known as wedged multi-layer Laue lenses. Improvements to the lens design and fabrication technique demand an accurate, robust, in situ and at-wavelength characterization method. To this end, a modified form of the speckle tracking wavefront metrology method has been developed. The ptychographic X-ray speckle tracking method is capable of operating with highly divergent wavefields. A useful by-product of this method is that it also provides high-resolution and aberration-free projection images of extended specimens. Three separate experiments using this method are reported, where the ray path angles have been resolved to within 4 nrad with an imaging resolution of 45 nm (full period). This method does not require a high degree of coherence, making it suitable for laboratory-based X-ray sources. Likewise, it is robust to errors in the registered sample positions, making it suitable for X-ray free-electron laser facilities, where beam-pointing fluctuations can be problematic for wavefront metrology.

Gratings for synchrotron and FEL beamlines: aproject for the manufacture of ultra-precise gratings at Helmholtz Zentrum Berlin.

Blazed gratings are of dedicated interest for the monochromatization of synchrotron radiation when a high photon flux is required, such as, for example, in resonant inelastic X-ray scattering experiments or when the use of laminar gratings is excluded due to too high flux densities and expected damage, for example at free-electron laser beamlines. Their availability became a bottleneck since the decommissioning of the grating manufacture facility at Carl Zeiss in Oberkochen. To resolve this situation a new technological laboratory was established at the Helmholtz Zentrum Berlin, including instrumentation from Carl Zeiss. Besides the upgraded ZEISS equipment, an advanced grating production line has been developed, including a new ultra-precise ruling machine, ion etching technology as well as laser interference lithography. While the old ZEISS ruling machine GTM-6 allows ruling for a grating length up to 170 mm, the new GTM-24 will have the capacity for 600 mm (24 inch) gratings with groove densities between 50 lines mm-1 and 1200 lines mm-1. A new ion etching machine with a scanning radiofrequency excited ion beam (HF) source allows gratings to be etched into substrates of up to 500 mm length. For a final at-wavelength characterization, a new reflectometer at a new Optics beamline at the BESSY-II storage ring is under operation. This paper reports on the status of the grating fabrication, the measured quality of fabricated items by ex situ and insitu metrology, and future development goals.

At-wavelength metrology facility for soft X-ray reflection optics

A new Optics Beamline coupled to a versatile UHV reflectometer is successfully operating at BESSY-II. It is used to carry out at-wavelength characterization and calibration of in-house produced gratings and novel nano-optical devices as well as mirrors and multilayer systems in the UV and XUV spectral region. This paper presents most recent commissioning data of the beamline and shows their correlation with initial beamline design calculations. Special attention is paid to beamline key parameters which determine the quality of the measurements such as high-order suppression and stray light behavior. The facility is open to user operation.

The at-wavelength metrology facility for UV- and XUV-reflection and diffraction optics at BESSY-II.

A technology center for the production of high-precision reflection gratings has been established. Within this project a new optics beamline and a versatile reflectometer for at-wavelength characterization of UV- and XUV-reflection gratings and other (nano-) optical elements has been set up at BESSY-II. The Plane Grating Monochromator beamline operated in collimated light (c-PGM) is equipped with an SX700 monochromator, of which the blazed gratings (600 and 1200 lines mm(-1)) have been recently exchanged for new ones of improved performance produced in-house. Over the operating range from 10 to 2000 eV this beamline has very high spectral purity achieved by (i) a four-mirror arrangement of different coatings which can be inserted into the beam at different angles and (ii) by absorber filters for high-order suppression. Stray light and scattered radiation is removed efficiently by double sets of in situ exchangeable apertures and slits. By use of in- and off-plane bending-magnet radiation the beamline can be adjusted to either linear or elliptical polarization. One of the main features of a novel 11-axes reflectometer is the possibility to incorporate real life-sized gratings. The samples are adjustable within six degrees of freedom by a newly developed UHV-tripod system carrying a load up to 4 kg, and the reflectivity can be measured between 0 and 90° incidence angle for both s- and p-polarization geometry. This novel powerful metrology facility has gone into operation recently and is now open for external users. First results on optical performance and measurements on multilayer gratings will be presented here.

At-wavelength characterization of refractive x-ray lenses using a two-dimensional grating interferometer

We report on the application of a two-dimensional hard x-ray grating interferometer to x-ray optics metrology. The interferometer is sensitive to refraction angles in two perpendicular directions with a precision of 10 nrad. It is used to observe the wavefront changes induced by a single parabolic beryllium focusing lens of large radius of curvature. The lens shape is reconstructed and its residual aberrations are analyzed. Its profile differs from an ideal parabolic shape by less than 2 μm or λ/50 at λ = 0.54 Å wavelength.

Extreme ultraviolet mask substrate surface roughness effects on lithographic patterning

In extreme ultraviolet lithography exposure systems, mask substrate roughness-induced scatter contributes to line edge roughness (LER) at the image plane. In this article, the impact of mask substrate roughness on image plane speckle is explicitly evaluated. A programed roughness mask was used to study the correlation between mask roughness metrics and wafer plane aerial image inspection. The authors find that the roughness measurements by the top surface topography profile do not provide complete information on the scatter related speckle that leads to LER at the image plane. They suggest at-wavelength characterization by imaging and/or scatter measurements into different frequencies as an alternative for a more comprehensive metrology of the mask substrate/multilayer roughness effects.

Characterization of the measurement uncertainty of a laboratory EUV reflectometer for large optics

Quality assurance for the production of optical components for extreme ultraviolet lithography (EUVL) strongly requires at-wavelength metrology. Initially, the at-wavelength characterization of mirrors and masks was developed using synchrotron radiation of electron storage rings, e.g. BESSY II. For the production process of EUV optics, however, the immediate access to metrology tools is necessary and the availability of laboratory devices is mandatory. Recently, an EUV reflectometer (EUVR) for large samples has been put into operation. It consists of a laser-produced plasma (LPP) radiation source, a monochromator and a large goniometer system. It can handle samples with diameters of up to 500 mm, thicknesses of up to 200 mm and weights of up to 30 kg. The wavelength can be varied from 10 nm to 16 nm. The spot size on the sample surface is about 2 mm in both directions. The angle of incidence can be varied from 3° to grazing incidence. In this paper, we describe the measurement uncertainties achieved in the EUVR with reference to measurements by the Physikalisch-Technische Bundesanstalt at its soft x-ray radiometry beamline at BESSY II. Using appropriate reference points for the wavelength calibration of the monochromator, the absolute wavelength uncertainty is below 4 pm in the spectral range from 11 nm to 15 nm. The measured peak reflectance of multilayer mirrors shows a constant offset of about 1% absolute and is reproduced within 0.2%.

Shearing Interferometry for at Wavelength Wavefront Measurement of Extreme-Ultraviolet Lithography Projection Optics

We present a type of lateral shearing interferometer (LSI) for at-wavelength characterization of the projection lens for use in extreme-ultraviolet lithography (EUVL). LSI is one of the potential candidates for high Numerical Aperture (NA) optics testing at the EUV region. To address the problem of multiple-beam interference, we propose a general approach for derivation of a phase-shift algorithm that is able to eliminate the undesired 0th order effect. The main error source effects including shear ratio estimate, hyperbolic calibration, and charge coupled device (CCD) size, etc. are characterized and the measurement accuracy of the LSI is estimated to be within 7 mλ rms (0.1 nm rms at 13.5 nm wavelength) for testing the wavefront of EUVL projection optics.

At-wavelength characterization of the extreme ultraviolet Engineering Test Stand Set-2 optic

At-wavelength interferometric characterization of a new 4×-reduction lithographic-quality extreme ultraviolet (EUV) optical system is described. This state-of-the-art projection optic was fabricated for installation in the EUV lithography Engineering Test Stand (ETS) and is referred to as the ETS Set-2 optic. EUV characterization of the Set-2 optic is performed using the EUV phase-shifting point diffraction interferometer (PS/PDI) installed on an undulator beamline at Lawrence Berkeley National Laboratory’s Advanced Light Source. This is the same interferometer previously used for the at-wavelength characterization and alignment of the ETS Set-1 optic. In addition to the PS/PDI-based full-field wave front characterization, we also present wave front measurements performed with lateral shearing interferometry, the chromatic dependence of the wave front error, and the system-level pupil-dependent spectral-bandpass characteristics of the optic; the latter two properties are only measurable using at-wavelength interferometry.

Experimental study of a shearing interferometer concept for at-wavelength characterization of extreme-ultraviolet optics

We describe the experimental evaluation of a shearing interferometer concept for at-wavelength testing of extreme-ultraviolet optics. The concept is based on the Ronchi test, which has been modified by a new design for entrance and exit gratings to suppress disturbing higher-order interference patterns. The interferometer concept has been tested on an experimental setup, of which all relevant parameters have been scaled from extreme-ultraviolet to visible-light wavelengths. A Twyman-Green interferometer has been integrated into the setup for comparison with the improved Ronchi test. A systematic difference of 7-12 mlambda rms has been found between wave fronts measured with the improved Ronchi test and with the Twyman-Green interferometer. Possible error sources have been analyzed. The accuracy of the interferometer is estimated to be 10 mlambda rms.

At-wavelength characterization of an extreme ultraviolet camera from low to mid-spatial frequencies with a compact laser plasma source

The final alignment and characterization of an extreme ultraviolet (EUV) lithographic projection optics system must be performed at the operating wavelength in order to account for errors associated with the combined effect of multilayer coating and substrate fabrication error. Two complementary metrology techniques have been developed which can operate on a compact laser plasma source: EUV lateral shear interferometry (LSI) and aerial image monitoring (AIM). LSI quantifies residual low spatial frequency wave front errors associated with the “figure” of each optical element. To characterize the effect of mid-spatial frequency errors that lead to scatter in the image plane, an EUV aerial image monitor was employed. EUV interferometry was compared to visible light interferometry measurements of the optical system and was found to be in reasonable agreement for low spatial frequency errors. The contrast as measured by AIM and photoresist exposures indicates an additional reduction of contrast associated with scatter due to large mid-spatial frequency errors.