Asymmetric Waveguide Research Articles

High performance on-chip polarization beam splitter at visible wavelengths based on a silicon nitride small-sized ridge waveguide.

Due to sensitive scaling of the wavelength and the visible-light absorption properties with the device dimension, traditional passive silicon photonic devices with asymmetric waveguide structures cannot achieve polarization control at the visible wavelengths. In this work, a simple and small polarization beam splitter (PBS) for a broad visible-light band, using a tailored silicon nitride (Si3N4) ridge waveguide, is presented, which is based on the distinct optical distribution of two fundamental orthogonal polarized modes in the ridge waveguide. The bending loss for different bending radii and the optical coupling properties of the fundamental modes for different Si3N4 ridge waveguide configurations are analyzed. A PBS composed of a bending ridge waveguide structure and a triple-waveguide directional coupler was fabricated on the Si3N4 thin film. The TM excitation of the device based on a bending ridge waveguide structure shows a polarization extinction ratio (PER) of ≥ 20 dB with 33 nm bandwidth (624-657 nm) and insertion loss (IL) ≤ 1 dB at the through port. The TE excitation of the device, based on a triple-waveguide directional coupler with coupling efficiency distinction between the TE0 and TM0 modes, shows a PER of ≥ 18 dB with 50 nm bandwidth (580-630 nm) and insertion loss (IL) ≤ 1 dB at the cross port. The on-chip Si3N4 PBS device is found to possess the highest known PER at a visible broadband range and small (43 µm) footprint. It should be useful for novel photonic circuit designs and further exploration of Si3N4 PBSs.

High-efficiency and compact microwave heating system for liquid in a mug

The demand for efficient and compact heating for dynamic dielectric liquid has grown significantly. Compared with traditional heating, microwave heating has the advantages of being fast and efficient. Moreover, the demand for outdoor portable heating and industrial compact heating is increasing. To address this limitation, this study proposes a compact heating system based on a metamaterial-based circular waveguide. First, asymmetric propagation theory is introduced, and an asymmetric propagation circular waveguide is designed in detail according to the discretisation of the relative permittivity. Then, a multi-physics model using a circular waveguide and a mug for high heating efficiency is developed by coupling Maxwell's equations and the heat transfer equation. Furthermore, heating experiments are performed for liquids with different relative permittivity and the experimental results consistently validated an efficiency rate of over 88 %, which agrees with the simulation results. Finally, the effects of the dielectric properties of the material and mug on the heating efficiency are discussed to highlight the robustness of the proposed heating system, with heating efficiency consistently maintained at 75 % or higher. In summary, the proposed design features a compact structure that is suitable for practical microwave heating applications.

Discretely Tunable (2594, 2629, 2670 nm) GaSb/Si3N4 Hybrid Laser for Multiwavelength Spectroscopy

AbstractA discrete, tunable photonic integrated laser is showcased for multiwavelength spectroscopy of CO2, H2S, and H2O. The laser combines an AlGaInAsSb/GaSb type‐I quantum well‐reflective semiconductor optical amplifier with a Si3N4 photonic integrated circuit (PIC). Operating at room temperature, the laser emits at 2670.42, 2629.12, and 2594.27 nm, with mW‐level average powers. The PIC employs a novel approach for achieving switching between three distinct emission wavelengths by using two cascaded tunable Mach–Zehnder interferometers (MZIs) that are connected to three spiral‐shaped narrow‐band distributed Bragg reflectors (DBRs). Phase tuning the arms of the MZIs allows the laser emission wavelength to be switched between the DBRs, while the DBRs themselves offer fine‐tuning of the emission wavelength. This design enables a simpler tuning mechanism with fewer control variables compared to hybrid PIC‐based lasers using Vernier architectures or a combination of multiple semiconductor amplifiers. Low‐loss and broadband MZIs are achieved by employing two interconnected directional couplers, which utilize asymmetric waveguides in the coupling region to effectively control the phase. Besides achieving state‐of‐the‐art performance for Si3N4‐based integrated lasers at 2.6 µm wavelength region, the demonstrated performance of passive components, including MZIs and spiral DBRs, opens new possibilities for mid‐infrared PIC technology.

Design of asymmetric waveguide for second harmonic generation based on thin film lithium niobate

Design of asymmetric waveguide for second harmonic generation based on thin film lithium niobate

Polarization Splitting at Visible Wavelengths with the Rutile TiO2 Ridge Waveguide.

On-chip polarization control is in high demand for novel integrated photonic applications such as polarization division multiplexing and quantum communications. However, due to the sensitive scaling of the device dimension with wavelength and the visible-light absorption properties, traditional passive silicon photonic devices with asymmetric waveguide structures cannot achieve polarization control at visible wavelengths. In this paper, a new polarization-splitting mechanism based on energy distributions of the fundamental polarized modes in the r-TiO2 ridge waveguide is investigated. The bending loss for different bending radii and the optical coupling properties of the fundamental modes in different r-TiO2 ridge waveguide configurations are analyzed. In particular, a polarization splitter with a high extinction ratio operating at visible wavelengths based on directional couplers (DCs) in the r-TiO2 ridge waveguide is proposed. Polarization-selective filters based on micro-ring resonators (MRRs) with resonances of only TE or TM polarizations are designed and operated. Our results show that polarization-splitters for visible wavelengths with a high extinction ratio in DC or MRR configurations can be achieved with a simple r-TiO2 ridge waveguide structure.

Compact and efficient polarization rotator using laterally asymmetric rib waveguides on a lithium-niobate-on-insulator platform.

Photonic devices based on a lithium-niobate-on-insulator (LNOI) are current research hotspots; however, owing to the high refractive index contrast of the LNOI platform and inherent birefringence of lithium niobate itself, such photonic devices are generally polarization sensitive, affecting their further wide application. This paper proposes a simple, compact, and efficient polarization rotator (PR) based on a laterally asymmetric rib waveguide by depositing a layer of semi-infinite silicon nitride dielectric material on one side of the rib waveguide. The results show that a PR with a polarization rotation region length of 15.77µm is achieved, and the polarization extinction ratio (PER), insertion loss (IL), and polarization conversion efficiency (PCE) are 38.57/68.95 and 0.2/0.22dB, and 99.99%/almost 100%, respectively, for the fundamental transverse electric mode (T E 0) and transverse magnetic mode (T M 0) at a 1.55µm wavelength. The operation bandwidth is around 120nm for the T E 0 mode and T M 0 mode when the PER, IL, and PCE are greater than 20dB, less than 0.32dB, and more than 99%, respectively. Fabrication tolerances to the key structural parameters are investigated in detail. In addition, the evolution fields of the T E 0 mode and T M 0 mode along the propagation direction through the proposed device are presented.

Threshold and power of pulsed red-emitting diode lasers with a bulk active layer near p-cladding under high-temperature operation

Threshold properties and pulsed output of AlGaInP visible-emitting lasers with an asymmetric waveguide structure and a bulk active layer are analysed. The effects of the current leakage, increased by the heating of the laser due to the proximity of the electrical pulse source and the Joule heating in and around this source are analysed. When optimising the laser design, waveguiding properties of the bulk active layer are shown to be important, leading to threshold currents decreasing, and injection efficiency increasing, with active layer thickness in lasers with moderately thick (< 0.1 μm) active layers.

Lasing at a stationary inflection point

The concept of lasers based on the frozen mode regime in active periodic optical waveguides with a 3rd-order exceptional point of degeneracy (EPD) is advanced. The frozen mode regime in a lossless and gainless waveguide is associated with a stationary inflection point (SIP) in the Bloch dispersion relation, where three Bloch eigenmodes coalesce forming the frozen mode. As a practical example, we consider an asymmetric serpentine optical waveguide (ASOW). An ASOW operating near the SIP frequency displays a large group delay of a non-resonant nature that scales as the cube of the waveguide length, leading to a strong gain enhancement when active material is included. Therefore, a laser operating in the close vicinity of an SIP has a gain threshold that scales as a negative cube of the waveguide length. We determine that this scaling law is maintained in the presence of small distributed losses, such as radiation associated with waveguide bends and roughness. In addition, we show that although gain causes a distortion in the modes coalescing at the SIP, the properties of the frozen mode are relatively resistant to such small perturbations and we still observe a large degree of exceptional degeneracy for gain values that bring the system above threshold. Finally, our study also reveals that lasing near an SIP is favored over lasing near a photonic band edge located in close proximity to the SIP. In particular, we observe that an SIP-induced lasing in an ASOW displays lower gain threshold compared to lasing near the photonic regular band edge (RBE), even though the SIP resonance has a lower quality factor than the RBE resonance.

Oriented Self-Assembly of Hierarchical Branch Organic Crystals for Asymmetric Photonics.

Organic hierarchical branch micro/nanostructures constituted by single crystals with inherent multichannel characteristics exhibit superior potential in regulating photon transmission for photonic circuits. However, organic branch micro/nanostructures with precise branch positions are extremely difficult to achieve due to the randomness of the nucleation process. Herein, by taking advantage of the dislocation stress field-impurity interaction that solute molecules deposit preferentially along the dislocation line, twinning deformation was introduced into microcrystals to induce oriented nucleation sites, and ultimately organic branch microstructures with controllable branch sites were fabricated. The growth mechanism of these controllable single crystals with an angle of 140° between trunk and branch is attributed to the low lattice mismatching ratio (η) of 4.8%. These as-prepared hierarchical branch single crystals with asymmetrical optical waveguide characteristics have been demonstrated as an optical logic gate with multiple input/out channels, which provides a route to command the nucleation sites and offers potential applications in the organic optoelectronics at the micro/nanoscale.

Strong localization and suppression of Anderson modes in an asymmetrical optical waveguide.

In this paper, transverse Anderson localization of light waves in a 3D random network is achieved inside an asymmetrical type optical waveguide, formed within a fused-silica fiber by capillary process. Scattering waveguide medium originates from naturally formed air inclusions and Ag nanoparticles in rhodamine dye doped-phenol solution. Multimode photon localization is controlled by changing the degree of the disorder in the optical waveguide to suppress unwanted extra modes and obtain only one targeted strongly localized single optical mode confinement at the desired emission wavelength of the dye molecules. Additionally, the fluorescence dynamics of the dye molecules coupled into the Anderson localized modes in the disordered optical media are analyzed through time resolved experiments based on a single photon counting technique. The radiative decay rate of the dye molecules is observed to be enhanced up to a factor of about 10.1 through coupling into the specific Anderson localized cavity within the optical waveguide, providing a milestone for investigation of transverse Anderson localization of light waves in 3D disordered media to manipulate light-matter interaction.

Regrowth-free AlGaInAs MQW polarization controller integrated with a sidewall grating DFB laser

Polarization control is at the heart of high-capacity data optical communication systems, such as polarization-division multiplexers and Stokes vector modulation transmitters. Despite passive polarization control being mature, the realization of monolithically integrated polarization controllers and single longitudinal mode light sources, such as distributed-feedback (DFB) lasers, is of importance. In this research, we report an AlGaInAs multiple-quantum-well photonic integrated circuit device which can control the state of polarization of the output light source, consisting of a polarization mode converter (PMC), a differential phase shifter (DPS), and a sidewall grating DFB laser. We demonstrate an asymmetrical stepped-height ridge waveguide PMC to realize TE to TM polarization conversion and a symmetrical straight waveguide DPS to enable polarization rotation from approximately counterclockwise circular polarization to linear polarization. Based on the identical epitaxial layer scheme, all the PMC, DPS, and DFB lasers can be integrated monolithically using only a single step of metalorganic vapor-phase epitaxy and two steps of III-V material dry etching. For the DFB-PMC device, a high TE to TM polarization conversion efficiency (98.4%) over a wide range of DFB injection currents is reported at 1555 nm wavelength. For the DFB-PMC-DPS device, a nearly 60° rotation of the Stokes vector on the Poincaré sphere was obtained with a range of bias voltage from 0 to −3.0 V at a laser drive current of 170 mA.

Straight and curved distributed Bragg reflector design for compact WDM filters.

Grating-assisted contra-directional couplers (CDCs) wavelength selective filters for wavelength division multiplexing (WDM) are designed and experimentally demonstrated. Two configuration setups are designed; a straight-distributed Bragg reflector (SDBR) and curved distributed Bragg reflector (CDBR). The devices are fabricated on a monolithic silicon photonics platform in a GlobalFoundries CMOS foundry. The sidelobe strength of the transmission spectrum is suppressed by controlling the energy exchange between the asymmetric waveguides of the CDC using grating and spacing apodization. The experimental characterization demonstrates a flat-top and low insertion loss (0.43 dB) spectrally stable performance (<0.7 nm spectral shift) across several different wafers. The devices have a compact footprint of only 130µm2/Ch (SDBR) and 3700µm2/Ch (CDBR).

A monopole broadband circularly polarized antenna with coupled disc and folded microstrip stub lines

A broadband circularly polarized (CP) printed monopole antenna which fed by coplanar waveguide (CPW) is proposed in the paper. The structure of the novel antenna includes a quarter circular disc radiating monopole, a coupled circular patch, and a bent L-shaped microstrip stub line. The L-shaped microstrip stub line is used to widen the impedance bandwidth and generate a horizontal component of the electromagnetic wave. The adoption of the asymmetric ground coplanar waveguide structure with the single-feed technology and the coupled circular patch, simultaneously achieve wide impedance bandwidth and wide axial ratio (AR) bandwidth. The structure parameters and the surface current of the designed antenna are analysed. The simulation and the measurement are conducted, showing good characterizations of the designed antenna. The 10-dB impedance bandwidth is 7.57 GHz, the fractional bandwidth from 6.05 to 13.62 GHz is 76.9%, the 3-dB axial ratio bandwidth is 3.01 GHz, and the fractional bandwidth from 6.05 to 9.06 GHz is 39.8%. The antenna can generate right/left hand circularly polarized waves in the direction of ± z axis. The designed antenna has wide applications in the fields of Internet of Things (IoT), broadband dual-CP communication systems and polarization diversity systems, wireless personal area network and other advanced communication systems.

Compact nonvolatile polarization switch using an asymmetric Sb2Se3-loaded silicon waveguide.

We propose and simulate a compact (∼29.5 µm-long) nonvolatile polarization switch based on an asymmetric Sb2Se3-clad silicon photonic waveguide. The polarization state is switched between TM0 and TE0 mode by modifying the phase of nonvolatile Sb2Se3 between amorphous and crystalline. When the Sb2Se3 is amorphous, two-mode interference happens in the polarization-rotation section resulting in efficient TE0-TM0 conversion. On the other hand, when the material is in the crystalline state, there is little polarization conversion because the interference between the two hybridized modes is significantly suppressed, and both TE0 and TM0 modes go through the device without any change. The designed polarization switch has a high polarization extinction ratio of > 20 dB and an ultra-low excess loss of < 0.22 dB in the wavelength range of 1520-1585 nm for both TE0 and TM0 modes.

100-GHz ultra-short high-peak-power colliding-pulse mode-locked laser with asymmetric coating.

By using colliding-pulse mode-locking (CPM) configuration with asymmetric cladding layer and coating, 1.5-µm AlGaInAs/InP multiple quantum well (MQW) CPM lasers with high-power and ultra-short pulse generation capability at a repetition rate of 100 GHz are reported. The laser adopts a high-power epitaxial design, with four pairs of MQWs and an asymmetrical dilute waveguide cladding layer to reduce the internal loss, maintaining good thermal conductivity while increasing the saturation energy of the gain region. The asymmetric coating is introduced, as compared to conventional CPM laser with symmetric reflectivity, to further increase the output power and shorten the pulse width. With a high reflection (HR) coating of 95% on one facet and another facet as cleaved, 100-GHz sub-picosecond optical pulses with peak power on a Watt level are demonstrated. Two mode-locking states, the pure CPM state and the partial CPM state, are investigated. Pedestal-free optical pulses are obtained for both states. For the pure CPM state, a pulse width of 564 fs, an average power of 59 mW, a peak power of 1.02 W, and an intermediate mode suppression ratio over 40 dB are demonstrated. For the partial CPM state, a pulse width of 298 fs is demonstrated.

Low threshold current density and high power InGaN-based blue-violet laser diode with an asymmetric waveguide structure.

Performance of InGaN-based blue-violet laser diodes (LD) with different waveguide structure were investigated by simulation and experimental methods. Theoretical calculation demonstrated that threshold current (Ith) can be reduced and slope efficiency (SE) can be improved by using an asymmetric waveguide structure. Based on the simulation results, a LD with 80-nm-thick In0.03Ga0.97N lower waveguide (LWG) and 80-nm-thick GaN upper waveguide (UWG) is fabricated with flip chip package. Under continuous wave (CW) current injection at room temperature, its optical output power (OOP) reaches 4.5 W at an operating current of 3 A and the lasing wavelength of 403 nm. The threshold current density (Jth) is 0.97 kA/cm2 and the SE is about 1.9 W/A.

High-Gain and Wideband Planar Endfire Antenna Implemented via Spoof Surface Plasmon Polaritons and Dielectric Lens for X-Band Applications

This letter proposes a wideband, high-gain, and planar endfire antenna using odd-mode spoof surface plasmon polaritons (SSPPs) and dielectric lens. The SSPPs of the odd mode are excited via a novel asymmetric coplanar waveguide feeding configuration, consisting of a row of gradient slots etched inside of one ground plane. Symmetric SSPPs structure serves as a radiator element to realize stable endfire radiation. By extending a planar elliptical dielectric lens at the end of the substrate, the gain and front-to-back ratio (FBR) of the proposed antenna are further enhanced. The proposed endfire antenna is fabricated and measured to certify the design concept. Measured results indicate the endfire antenna obtains a desired operating band of 7.9–13 GHz, a high peak endfire gain of 14.8 dBi, and an average efficiency of 80%. Moreover, the FBR is better than 20 dB over the wide bandwidth with an optimal peak FBR up to 40 dB.

Broadband and CMOS-compatible polarization splitter and rotator built on a silicon nitride-on-silicon multilayer platform.

A broadband and CMOS-compatible polarization beam splitter and rotator (PSR) built on the silicon nitride-on-silicon multilayer platform is presented. The PSR is realized by cascading a polarization beam splitter and a polarization rotator, which are both subtly constructed with an asymmetrical directional coupler waveguide structure. The advantage of this device is that the function of PSR can be directly realized in the SiN layer, providing a promising solution to the polarization diversity schemes in SiN photonic circuits. The chip is expected to have high power handling capability as the light is input from the SiN waveguide. The use of silicon dioxide as the upper cladding of the device ensures its compatibility with the metal back-end-of-line process. By optimizing the structure parameters, a polarization conversion loss lower than 1dB and cross talk larger than 27.6dB can be obtained for TM-TE mode conversion over a wavelength range of 1450 to 1600nm. For TE mode, the insertion loss is lower than 0.26dB and cross talk is larger than 25.3dB over the same wavelength range. The proposed device has good potential in diversifying the functionalities of the multilayer photonic chip with high integration density.

Asymmetric comb waveguide for strong interactions between atoms and light.

Coupling quantum emitters and nanostructures, in particular cold atoms and optical waveguides, has recently raised a large interest due to unprecedented possibilities of engineering light-matter interactions. In this work, we propose a new type of periodic dielectric waveguide that provides strong interactions between atoms and guided photons with an unusual dispersion. We design an asymmetric comb waveguide that supports a slow mode with a quartic (instead of quadratic) dispersion and an electric field that extends far into the air cladding for an optimal interaction with atoms. We compute the optical trapping potential formed with two guided modes at frequencies detuned from the atomic transition. We show that cold Rubidium atoms can be trapped as close as 100 nm from the structure in a 1.3-mK-deep potential well. For atoms trapped at this position, the emission into guided photons is largely favored, with a beta factor as high as 0.88 and a radiative decay rate into the slow mode 10 times larger than the free-space decay rate. These figures of merit are obtained at a moderately low group velocity of c/50.

Tunable On‐Chip Terahertz Isolator Based on Nonreciprocal Transverse Edge Spin State of Asymmetric Magneto‐Plasmonic Waveguide

AbstractTerahertz (THz) isolators are crucial to one‐way transmission in THz application systems. However, it is still challenging to implement THz isolators with integrated structure and tunable characteristics. Herein, a THz isolator based on a magneto‐plasmonic waveguide (MPWG) has been demonstrated. In this InSb‐air‐metal asymmetric waveguide, the plasmonic band gap is excited and thermally tuned by surface plasmons. Moreover, under weak external magnetic fields (EMFs), magneto‐plasmons excite nonreciprocal transverse edge spin states, which break the time‐reversal symmetry of the MPWG and lead to a pair of isolation bandgaps that only allow one‐way transmission. The experimental results of both broadband time‐domain spectrum system and single‐frequency system confirm this isolator can achieve more than 20 dB isolation and only 4 dB insertion loss. More importantly, its isolation can be actively modulated by EMFs from 0 to 0.23 T, and also realize broadband tuning of over 1 THz frequency range by controlling the temperature from 80 to 280 K. This topological edge band structure of transverse spin states and its active manipulation mechanism are helpful to deepen the understanding of nonreciprocal plasmon propagation, and this broadband tunable THz on‐chip isolator is significant to urgently apply in strong THz sources and ultra‐sensitive detectors.