The fabrication and performance characteristics of In0.2Ga0.8As/GaAs gain guided laser arrays emitting near 1 μm are reported. The multiquantum well active region has three wells and is grown by molecular beam epitaxy. The 1 mm long lasers have a broad area threshold current density of 90 A/cm2. The estimated transparency current density per well from the measured threshold current density against cavity length data is 22 A/cm2. The ten-stripe coupled laser arrays have been operated to pulsed output powers of 4 W and CW output power of 1 W.