Vertical Nanowire Arrays Research Articles

Combining Axial and Radial Nanowire Heterostructures: Radial Esaki Diodes and Tunnel Field-Effect Transistors

The ever-growing demand on high-performance electronics has generated transistors with very impressive figures of merit (Radosavljevic et al., IEEE Int. Devices Meeting 2009, 1-4 and Cho et al., IEEE Int. Devices Meeting 2011, 15.1.1-15.1.4). The continued scaling of the supply voltage of field-effect transistors, such as tunnel field-effect transistors (TFETs), requires the implementation of advanced transistor architectures including FinFETs and nanowire devices. Moreover, integration of novel materials with high electron mobilities, such as III-V semiconductors and graphene, are also being considered to further enhance the device properties (del Alamo, Nature 2011, 479, 317-323, and Liao et al., Nature 2010, 467, 305-308). In nanowire devices, boosting the drive current at a fixed supply voltage or maintaining a constant drive current at a reduced supply voltage may be achieved by increasing the cross-sectional area of a device, however at the cost of deteriorated electrostatics. A gate-all-around nanowire device architecture is the most favorable electrostatic configuration to suppress short channel effects; however, the arrangement of arrays of parallel vertical nanowires to address the drive current predicament will require additional chip area. The use of a core-shell nanowire with a radial heterojunction in a transistor architecture provides an attractive means to address the drive current issue without compromising neither chip area nor device electrostatics. In addition to design advantages of a radial transistor architecture, we in this work illustrate the benefit in terms of drive current per unit chip area and compare the experimental data for axial GaSb/InAs Esaki diodes and TFETs to their radial counterparts and normalize the electrical data to the largest cross-sectional area of the nanowire, i.e. the occupied chip area, assuming a vertical device geometry. Our data on lateral devices show that radial Esaki diodes deliver almost 7 times higher peak current, Jpeak = 2310 kA/cm(2), than the maximum peak current of axial GaSb/InAs(Sb) Esaki diodes per unit chip area. The radial TFETs also deliver high peak current densities Jpeak = 1210 kA/cm(2), while their axial counterparts at most carry Jpeak = 77 kA/cm(2), normalized to the largest cross-sectional area of the nanowire.

Highly sensitive and flexible strain sensors based on vertical zinc oxide nanowire arrays

In this paper, a highly sensitive strain sensor with vertically aligned zinc oxide (ZnO) nanowire arrays on polyethylene terephthalate (PET) film was reported. The device fabrication includes conventional photolithography, metallization, and ZnO nanowire growth through a hydrothermal method. I–V characteristics of the device were highly nonlinear due to the Schottky contact between the nanowire and the gold (Au) electrode. The conductivity of the device is significantly tuned by the change of ZnO/Au Schottky barrier that reflects the strain-induced piezoelectric potential. A gauge factor up to 1813 was obtained from this strain senor, which is higher than the previously reported device based on a lateral ZnO microwire. Theoretical analysis of the piezotronic effect shows that the working nanowire with the largest conductivity change dominates the performance of the device. The non-working nanowire has limited adverse effect on the performance, which explains the robust performance of this novel strain sensor. The stability and fast response of the sensor were also investigated. The sensitive and robust strain sensor is expected to find applications in civil, medical, and other fields.

Collective behaviors of mammalian cells on amine-coated silicon nanowires

Intensive studies with vertical nanowire (NW) arrays have illustrated broad implications for manipulating mammalian cells in vitro, but how cellular responses are influenced by the presence of NWs has not been thoroughly investigated. Here, we address collective cellular behaviors, including surface area of cells, membrane trafficking, focal adhesion distribution and dynamics, and cytoskeletal protein distribution on amine-coated silicon (Si) NWs with different physical properties. The degree of HeLa cell spreading was inversely proportional to the surface area occupied by the NWs, which was not affected by manipulation of membrane trafficking dynamics. In the presence of a diffusive focal complex around the NWs, strong, well organized focal adhesion was hardly visible on the NWs, implying that the cells were interacting weakly with the NW-embedded surface. Furthermore, we found that actin filament formation of the cells on long NWs was not favorable, and this could explain our observation of reduced cell spreading, as well as the decreased number of focal adhesion complexes. Taken together, our results suggest that cells can survive on silicon NWs by adjusting their morphology and adhesion behavior through actively organizing these molecules.

Microwell-Directed Self-Assembly of Vertical Nanowire Arrays

Vertical arrays of anisotropic particles are desired for many applications including solar cells, battery electrodes, and lasers. Partially etched nano­wires (PENs) are hybrid silica nanotube/nanowires with partial metallic cores. These particles spontaneously form vertical arrays in which on average 70% of the particles are oriented perpendicular to the underlying substrate. Here, we perform PEN self-assembly on lithographically prepared substrates patterned with square microwells having dimensions comparable to the length of the particles. Particle self-assembly is observed both in the microwells and on the intervening surfaces. PENs both directly deposit into a well and diffuse across the surface between microwells until falling into a well. Assembly occurs as the local concentration of PENs in a well increases by these two mechanisms. Microwells provide a way to control array location on a surface and improve standing percentages up to 100% when the edge dimensions are decreased to a size approximately equal to the nanowire length. Micro­wells also protect against array disruption during sample drying.

Performance Optimization of Vertical Nanowire‐based Piezoelectric Nanogenerators

The integrated nanogenerator (NG) based on vertical nanowire (NW) arrays is one of the dominant designs developed to harvest mechanical energy using piezoelectric nanostructures. Finite element method (FEM) simulations of such a NG are developed using ZnO NWs in compression mode to evaluate its performances in term of piezoelectric potential generated, capacitance, induced mechanical energy, output electrical energy, and efficiency. This evaluation is essential to correctly understand NG operation. Three main issues are highlighted. The mechanical and electrical structures of the NG as an integrated system are optimized, and strategies for concentrating the mechanical strain field in the NWs and increasing the force sensitivity are developed. In addition, the influence of NWs length and diameter on NG performances is investigated. The optimization results in a piezoelectric nano composite material where global performances are improved by mean of long and thin NWs.

Fabrication of high anti-reflection nanowires on silicon using two-stage metal-assisted etching

In this paper, a novel two-stage metal-assisted etching (MAE) method is proposed for the fabrication of a high anti-reflection silicon nanowire array. In the first stage of etching, a high-concentration etchant is implemented in a short etching time to enable the uniform and complete deposition of coniferous-like silver on the wafer surface. Following the first stage, a low-concentration etchant for producing a vertical and uniform silicon nanowire array is processed in a relatively long etching time. Experimental results demonstrate that the proposed two-stage MAE method can produce high anti-reflection silicon nanowire array on a 6" silicon wafer requiring only a relatively simple and low-cost process. The P-type high-resistance silicon wafer that is etched under the two-stage MAE with the first-stage and second-stage processing time of 30 s and 15 min, respectively, can achieve an average reflectivity of 1.89% for the light spectrum from 200 nm to 1000 nm. In the UV and visible-light regions, the average reflectivity is 1.49% and 1.89%, respectively. The low reflectivity in the UV region enables the absorption of high-energy photons, while the low reflectivity at the IR region allows the absorption of a significant number of photons from sunlight.

Diameter dependence of polarization resolved reflectance from vertical silicon nanowire arrays: Evidence of tunable absorption

Vertical silicon nanowire arrays of different diameters ranging from 90 nm to 190 nm with a pitch of 400 nm are fabricated. Nanowires are arranged in a square lattice and have a length of 1 μm. Polarization resolved reflectances from these nanowire arrays are measured and significant differences are observed for the reflectance characteristics of the s- and p-polarized beams. A narrow wavelength band of increased absorption is reported by analyzing the reflectance using the finite difference time domain method. The center wavelength of this band shifts toward higher wavelengths as the diameter of the nanowires increases achieving tunable absorption spectra within the nanowires. The wavelength band shifts at a rate of approximately 3.3 nm with every 1 nm increment in diameter. The increased absorption is achieved due to modal excitation and near-field coupling between the nanowires.

Fibroblasts Cultured on Nanowires Exhibit Low Motility, Impaired Cell Division, and DNA Damage

Nanowires are commonly used as tools for interfacing living cells, acting as biomolecule-delivery vectors or electrodes. It is generally assumed that the small size of the nanowires ensures a minimal cellular perturbation, yet the effects of nanowires on cell migration and proliferation remain largely unknown. Fibroblast behaviour on vertical nanowire arrays is investigated, and it is shown that cell motility and proliferation rate are reduced on nanowires. Fibroblasts cultured on long nanowires exhibit failed cell division, DNA damage, increased ROS content and respiration. Using focused ion beam milling and scanning electron microscopy, highly curved but intact nuclear membranes are observed, showing no direct contact between the nanowires and the DNA. The nanowires possibly induce cellular stress and high respiration rates, which trigger the formation of ROS, which in turn results in DNA damage. These results are important guidelines to the design and interpretation of experiments involving nanowire-based transfection and electrical characterization of living cells.

Highly organised and dense vertical silicon nanowire arrays grown in porous alumina template on <100> silicon wafers

In this work, nanoimprint lithography combined with standard anodization etching is used to make perfectly organised triangular arrays of vertical cylindrical alumina nanopores onto standard <100>−oriented silicon wafers. Both the pore diameter and the period of alumina porous array are well controlled and can be tuned: the periods vary from 80 to 460 nm, and the diameters vary from 15 nm to any required diameter. These porous thin layers are then successfully used as templates for the guided epitaxial growth of organised mono-crystalline silicon nanowire arrays in a chemical vapour deposition chamber. We report the densities of silicon nanowires up to 9 × 109 cm−2 organised in highly regular arrays with excellent diameter distribution. All process steps are demonstrated on surfaces up to 2 × 2 cm2. Specific emphasis was made to select techniques compatible with microelectronic fabrication standards, adaptable to large surface samples and with a reasonable cost. Achievements made in the quality of the porous alumina array, therefore on the silicon nanowire array, widen the number of potential applications for this technology, such as optical detectors or biological sensors.

Optical Far-Field Method with Subwavelength Accuracy for the Determination of Nanostructure Dimensions in Large-Area Samples

The physical, chemical, and biological properties of nanostructures depend strongly on their geometrical dimensions. Here we present a fast, noninvasive, simple-to-perform, purely optical method that is capable of characterizing nanostructure dimensions over large areas with an accuracy comparable to that of scanning electron microscopy. This far-field method is based on the analysis of unique fingerprints in experimentally measured reflectance spectra using full three-dimensional optical modeling. We demonstrate the strength of our method on large-area (millimeter-sized) arrays of vertical InP nanowires, for which we simultaneously determine the diameter and length as well as cross-sample morphological variations thereof. Explicitly, the diameter is determined with an accuracy better than 10 nm and the length with an accuracy better than 30 nm. The method is versatile and robust, and we believe that it will provide a powerful and standardized measurement technique for large-area nanostructure arrays suitable for both research and industrial applications.

Memristor-Based Programmable Logic Array (PLA) and Analysis as Memristive Networks

A Memristor theorized by Chua in 1971 has the potential to dramatically influence the way electronic circuits are designed. It is a two terminal device whose resistance state is based on the history of charge flow brought about as the result of the voltage being applied across its terminals and hence can be thought of as a special case of a reconfigurable resistor. Nanoscale devices using dense and regular fabrics such as Memristor cross-bar is promising new architecture for System-on-Chip (SoC) implementations in terms of not only the integration density that the technology can offer but also both improved performance and reduced power dissipation. Memristor has the capacity to switch between high and low resistance states in a cross-bar circuit configuration. The cross-bars are formed from an array of vertical conductive nano-wires cross a second array of horizontal conductive wires. Memristors are realized at the intersection of the two wires in the array through appropriate processing technology such that any particular wire in the vertical array can be connected to a wire in the horizontal array by switching the resistance of a particular intersection to a low state while other cross-points remain in a high resistance state. However the approach introduces a number of challenges. The lack of voltage gain prevents logic being cascaded and voltage level degradation affects robustness of the operation. Moreover the cross-bars introduce sneak current paths when two or more cross points are connected through the switched Memristor. In this paper, we propose Memristor-based programmable logic array (PLA) architecture and develop an analytical model to analyze the logic level on the memristive networks. The proposed PLA architecture has 12 inputs maximum and can be cascaded for more input variables with R(off)/R(on) ratio in the range from 55 to 160 of Memristors.

Efficient light management in vertical nanowire arrays for photovoltaics

Vertical arrays of direct band gap III-V semiconductor nanowires (NWs) hold the prospect of cheap and efficient next-generation photovoltaics, and guidelines for successful light-management are needed. Here, we use InP NWs as a model system and find, through electrodynamic modeling, general design principles for efficient absorption of sun light in nanowire arrays by systematically varying the nanowire diameter, the nanowire length, and the array period. Most importantly, we discover the existence of specific band-gap dependent diameters, 170 nm and 410 nm for InP, for which the absorption of sun light in the array is optimal, irrespective of the nanowire length. At these diameters, the individual InP NWs of the array absorb light strongly for photon energies just above the band gap energy due to a diameter-tunable nanophotonic resonance, which shows up also for other semiconductor materials of the NWs. Furthermore, we find that for maximized absorption of sun light, the optimal period of the array increases with nanowire length, since this decreases the insertion reflection losses.

Reflection measurements to reveal the absorption in nanowire arrays

The absorption of light is at the core of photovoltaic applications. For many nanostructure-based devices, an assessment of the absorption in the nanostructures is complicated by a thick, opaque substrate that prohibits transmission measurements. Here, we show how a single reflection measurement can be used for approximating the amount of light absorbed in vertical semiconductor nanowire arrays.

Site-specific nucleation and controlled growth of a vertical tellurium nanowire array for high performance field emitters

We report the controlled growth of highly ordered and well aligned one-dimensional tellurium nanostructure arrays via a one-step catalyst-free physical vapor deposition method. The density, size and fine structures of tellurium nanowires are systematically studied and optimized. Field emission measurement was performed to display notable dependence on nanostructure morphologies. The ordered nanowire array based field emitter has a turn-on field as low as 3.27 V μm−1 and a higher field enhancement factor of 3270. Our finding offers the possibility of controlling the growth of tellurium nanowire arrays and opens up new means for their potential applications in electronic devices and displays.

ZnO Nanowire Arrays for Enhanced Photocurrent in PbS Quantum Dot Solar Cells

Vertical arrays of ZnO nanowires can decouple light absorption from carrier collection in PbS quantum dot solar cells and increase power conversion efficiencies by 35%. The resulting ordered bulk heterojunction devices achieve short-circuit current densities in excess of 20 mA cm(-2) and efficiencies of up to 4.9%.

Geometrical optics, electrostatics, and nanophotonic resonances in absorbing nanowire arrays

Semiconductor nanowire arrays have shown promise for next-generation photovoltaics and photodetection, but enhanced understanding of the light-nanowire interaction is still needed. Here, we study theoretically the absorption of light in an array of vertical InP nanowires by moving continuously, first from the electrostatic limit to the nanophotonic regime and then to the geometrical optics limit. We show how the absorption per volume of semiconductor material in the array can be varied by a factor of 200, ranging from 10 times weaker to 20 times stronger than in a bulk semiconductor sample.

Vertical nanowire arrays as a versatile platform for protein detection and analysis

Protein microarrays are valuable tools for protein assays. Reducing spot sizes from micro- to nano-scale facilitates miniaturization of platforms and consequently decreased material consumption, but faces inherent challenges in the reduction of fluorescent signals and compatibility with complex solutions. Here we show that vertical arrays of nanowires (NWs) can overcome several bottlenecks of using nanoarrays for extraction and analysis of proteins. The high aspect ratio of the NWs results in a large surface area available for protein immobilization and renders passivation of the surface between the NWs unnecessary. Fluorescence detection of proteins allows quantitative measurements and spatial resolution, enabling us to track individual NWs through several analytical steps, thereby allowing multiplexed detection of different proteins immobilized on different regions of the NW array. We use NW arrays for on-chip extraction, detection and functional analysis of proteins on a nano-scale platform that holds great promise for performing protein analysis on minute amounts of material. The demonstration made here on highly ordered arrays of indium arsenide (InAs) NWs is generic and can be extended to many high aspect ratio nanostructures.

Vertical nanowire array-based field effect transistors for ultimate scaling

Nanowire-based field-effect transistors are among the most promising means of overcoming the limits of today's planar silicon electronic devices, in part because of their suitability for gate-all-around architectures, which provide perfect electrostatic control and facilitate further reductions in "ultimate" transistor size while maintaining low leakage currents. However, an architecture combining a scalable and reproducible structure with good electrical performance has yet to be demonstrated. Here, we report a high performance field-effect transistor implemented on massively parallel dense vertical nanowire arrays with silicided source/drain contacts and scaled metallic gate length fabricated using a simple process. The proposed architecture offers several advantages including better immunity to short channel effects, reduction of device-to-device variability, and nanometer gate length patterning without the need for high-resolution lithography. These benefits are important in the large-scale manufacture of low-power transistors and memory devices.

Probing enzymatic activity inside living cells using a nanowire-cell "sandwich" assay.

Developing a detailed understanding of enzyme function in the context of an intracellular signal transduction pathway requires minimally invasive methods for probing enzyme activity in situ. Here, we describe a new method for monitoring enzyme activity in living cells by sandwiching live cells between two vertical silicon nanowire (NW) arrays. Specifically, we use the first NW array to immobilize the cells and then present enzymatic substrates intracellularly via the second NW array by utilizing the NWs' ability to penetrate cellular membranes without affecting cells' viability or function. This strategy, when coupled with fluorescence microscopy and mass spectrometry, enables intracellular examination of protease, phosphatase, and protein kinase activities, demonstrating the assay's potential in uncovering the physiological roles of various enzymes.

Design parameters for nanowire‐planar tandem solar cells

AbstractA modified form of detailed balance theory is applied to a tandem semiconductor solar cell formed from a vertical nanowire array on a planar substrate. The concept of an effective packing fraction is introduced to account for the light trapping properties of the nanowire array. Our model provides important design criteria for the nanowire‐planar system, including the requirement for optimum performance of a lower energy nanowire bandgap than in an ideal all‐planar tandem cell. Using realistic design parameters for a III–V nanowire‐silicon bottom cell system we predict an efficiency enhancement of 22–27% relative to a planar silicon cell.