ArF Lithography Process Research Articles

Challenges and Progress in Defectivity for Advanced ArF Lithography Process

Challenges and Progress in Defectivity for Advanced ArF Lithography Process

Challenges and Progress in Defectivity for Advanced ArF Lithography Process

Challenges and Progress in Defectivity for Advanced ArF Lithography Process

Enhanced Cleaning for the Point-of-Use Filter and its Effectiveness on Wafer Defectivity in Immersion ArF Lithography Process

Enhanced Cleaning for the Point-of-Use Filter and its Effectiveness on Wafer Defectivity in Immersion ArF Lithography Process

Challenges and Progress in Low Defectivity for advanced ArF Lithography Processes using Surface Localized Material Technology

Challenges and Progress in Low Defectivity for advanced ArF Lithography Processes using Surface Localized Material Technology

Synthesis of ArF photoresist polymer composed of three methacrylate monomers via reversible addition-fragmentation chain transfer (RAFT) polymerization

ArF photoresist polymers were prepared via reversible addition-fragmentation chain transfer (RAFT) polymerization and free radical polymerization (FRP). Three methacrylates with lithographic functionalities including 2-ethyl-2-adamantyl methacrylate (EAdMA), α-gamma-butyrolactone methacrylate (GBLMA), and 3-hydroxy-1-adamantyl methacrylate (HAdMA), were used as monomer components and 2-cyanoprop-2-yl-1-dithionaphthalate (CPDN) was used as the chain transfer agent (CTA). In both polymerizations, the order of monomer reactivity was GBLMA>HAdMA>>EAdMA. This caused a composition gradient in RAFT polymerization as well as composition inhomogeneity in FRP. The polymers prepared by RAFT polymerization had lower molecular weight distributions and more uniform compositions. The improvement in molecular weight distribution and composition uniformity of the polymers prepared by RAFT polymerization should be beneficial for the ArF lithography process.

Characterization of Gap Fill Materials for Planarizing Substrate in Via-First Dual Damascene Lithography Process

This study focuses on the characterization of gap fill materials for advanced ArF lithography process. The gap fill materials have the planarization property on an irregular substrate such as the patterned holes and trenches to increase the depth of focus and resolution. After planarizing the substrate surface, the gap fill materials are used to avoid the dry etching damage in the dielectric materials. In the characterization of gap fill materials with an excellent planarization properties for lithography, two key factors were identified, namely the specific relationship between the cross-link reaction group concentration of the polymers and the via filling performance, and the specific relationship between the solvent used in the polymer solution and the via filling performance.

The Study on Developer Containing Surfactant for ArF Lithography Process

ArF Lithography has critical issues such as CD slimming, not-open behavior in hole pattern, line edge roughness, and uneven CD uniformity, etc. Some of these are partia11y caused by interogeneous interaction between resist and aqueous solutions such as developer and water. ArF resist is relatively hydrophobic compared to KrF and I-1ine resists. Here we will report uneven wetting problem generated by AtF lithography process and introduce new developer containing special surfactant as a solution.

Diluted Low Dielectric Constant Materials as Bottom Antireflective Coating Layers for both KrF and ArF Lithography Processes

In this paper, we report on a bottom antireflective coating (BARC) layer for both KrF and ArF lithography processes. The antireflective layers are composed of diluted low-dielectric constant materials, such as bisbenzo(cyclobutene) (BCB), fluorinated poly(arylene)ether (FLARE) and SiLK. By adding an optimized thickness of diluted low-dielectric constant materials, the reflectance of less than 1% at the resist/silicon substrate interface can be achieved. Diluted low-dielectric constant materials also have great potential to be used as BARC layers on various highly-reflectance substrates for metal-interconnect applications. Using this structure, it is easy to reduce reflectance without adding an extra BARC layer for patterning low-dielectric materials. After the lithography procedure, the diluted low-dielectric constant layer need not be removed.