Abstract
ArF Lithography has critical issues such as CD slimming, not-open behavior in hole pattern, line edge roughness, and uneven CD uniformity, etc. Some of these are partia11y caused by interogeneous interaction between resist and aqueous solutions such as developer and water. ArF resist is relatively hydrophobic compared to KrF and I-1ine resists. Here we will report uneven wetting problem generated by AtF lithography process and introduce new developer containing special surfactant as a solution.
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