The ability to control the gate capacitances is crucial for high-frequency applications, as it affects the device's frequency characteristics, gain and power handling capabilities. We present a 4H–SiC metal-semiconductor field-effect transistor (MESFET) with high gate capacitance control ability for high-frequency applications. The proposed structure (GCC-MESFET) consists of a step gate and a SiC well for adjusting the channel depletion layer and modifying the channel charges. Therefore, the gate capacitances will be controlled (GCC-MESFET). The proposed structure significantly improves the cut-off frequency (fT) and maximum oscillation frequency (fmax). The fT has increased from 23.5 GHz to 33 GHz and the fmax from 50.1 GHz to 54.4 GHz in the proposed structure compared to a conventional structure (C-MESFET). The results show that the DC maximum output power density (Pmax), DC transconductance (gm), cut-off frequency (fT) and maximum oscillation frequency (fmax) of GCC-MESFET improve in comparison with a conventional structure (C-MESFET). It is necessary to mention that the drain current and the breakdown voltage of the proposed structure increase by 48 % and 20 % respectively, compared with the C-MESFET structure due to modifying the channel charges and adjusting the electric field. So, the proposed structure can be used for high current, high voltage, high-power and high frequency applications.