Applications In Quantum Technologies Research Articles

Ultra-efficient surface grating couplers for chip-to-fiber and chip-to-free-space coupling based on single-beam radiation

Surface grating couplers, such as fiber-chip grating couplers and optical antennas, are fundamental devices in photonic integrated circuits, as they enable the coupling of light between the chip and an external medium. An important metric of surface grating couplers is the coupling efficiency, and high values, greater than -1 dB, are required for applications in quantum technology, light detection and ranging, and optical interconnects. Surface grating couplers typically suffer from radiation loss to the substrate, which significantly limits their coupling efficiency. Here we propose a novel grating-coupling concept that utilizes a high-refractive-index upper cladding to frustrate radiation orders to the substrate by operating in a single-beam diffraction regime. To illustrate this concept, we report the design of an easily fabricable silicon surface grating coupler with an unprecedented coupling efficiency of -0.2 dB to a single-mode optical fiber. Furthermore, the proposed strategy allows us to design an evanescently coupled millimeter-long optical antenna with a coupling efficiency of -0.1 dB to free space. Additionally, an ultra-fast wavelength-tunable beam steering of 0.37°/nm is achieved, which corresponds to more than a 2.5-fold enhancement over comparable silicon antennas. These results represent a pathway for a new set of photonic integrated interfaces for applications in which high-efficiency chip-to-fiber and chip-to-free-space coupling is critical.

Quantum non-Gaussian states of superfluid Helium vibrations

Abstract Quantum non-Gaussian states of phononic systems coupled to light are essential for fundamental studies of single-phonon mechanics and direct applications in quantum technology. Although nonclassical mechanical states have already been demonstrated, the more challenging quantum non-Gaussianity of such states remains limited. Using photon counting detection, we propose the quantum non-Gaussian generation of few-phonon states of low-temperature vibrating superfluid Helium. We predict the quantum non-Gaussian depth of such phononic states and investigate their robustness under relevant mechanical heating. As the quality of such phononic states is very high, we confirm a single-phonon bunching capability to further classify such states for future mechanical experiments. Moreover, we predict increasing capability for force sensing and thermometry for increasing heralded phonon numbers.

Full-zone optical spin injection in AlxGa1−xAs alloys

Abstract Full-zone optical spin injection in Al x Ga1−x As alloys is investigated by analyzing the degree of circular polarization (DCP) of luminescence in a quantum well architecture. Aluminium content in AlGaAs barrier layers is varied to explore both the direct- and indirect-bandgap regimes. For all the samples, experimental data are compared with a 30-band k .p model addressing the band structure of the alloy and the optical spin injection over the entire Brillouin zone. We observe circularly polarized luminescence arising from the spin generation either around Γ or the L valley. We interpret the specific shape of the DCP within a framework accounting for smaller electron spin relaxation at the higher k points of the X valley of the AlGaAs barrier layer. Moreover, it is found that the presence of strain plays a vital role in governing the magnitude and shape of the DCP spectra for near band-edge excitation while exciting spin-polarized carriers in the direct-bandgap AlGaAs. We believe that these findings are important for the realization of AlGaAs-based spin-photonic devices aiming at possible applications in quantum technology.

Comparative S/TEM study of superconducting Ta quantum resonators by wet and dry etching types

Superconducting resonators play a pivotal role in various quantum technology applications, such as quantum computing and high-frequency communication systems. The performance of these resonators is closely tied to the properties of the superconducting films used in their fabrication. In this study, we investigated the impact of wet and dry etching on tantalum (Ta) films leveraging advanced scanning transmission electron microscopy-based characterization methods and examined the morphological, chemical, and strain changes caused by the etching processes. Consequently, we report the significant differences between the two etching methods, with dry etching resulting in straight slanted sidewalls and a thinner oxidized layer, while wet etching produced curved sidewalls and undercuts. Both methods led to the formation of a residual Ta wedge at the lower part of the sidewall, causing lattice deformation, which could adversely influence the homogeneous operations of superconducting devices. These insights enhance our understanding of how etching influences superconducting films, offering valuable guidance for optimizing resonators and related devices. Our findings mark a significant stride in advancing quantum technologies and high-frequency communication by enhancing our practical understanding of superconducting material fabrication.

Probing the Nature of Single-Photon Emitters in a WSe2 Monolayer by Magneto-Photoluminescence Spectroscopy.

Monolayer transition metal dichalcogenides (TMDs) have emerged as promising materials to generate single-photon emitters (SPEs). While there are several previous reports in the literature about TMD-based SPEs, the precise nature of the excitonic states involved in them is still under debate. Here, we use magneto-optical techniques under in-plane and out-of-plane magnetic fields to investigate the nature of SPEs in WSe2 monolayers on glass substrates under different strain profiles. Our results reveal important changes on the exciton localization and, consequently, on the optical properties of SPEs. Remarkably, we observe an anomalous PL energy redshift with no significant changes of photoluminescence (PL) intensity under an in-plane magnetic field. We present a model to explain this redshift based on intervalley defect excitons under a parallel magnetic field. Overall, our results offer important insights into the nature of SPEs in TMDs, which are valuable for future applications in quantum technologies.

Programmable Activation of Quantum Emitters in High‐Purity Silicon with Focused Carbon Ion Beams

AbstractCarbon implantation at the nanoscale is highly desired for the engineering of defect‐based qubits in a variety of materials, including silicon, diamond, silicon carbide (SiC) and hexagonal boron nitride (hBN). However, the lack of focused carbon ion beams does not allow for the full disclosure of their potential for application in quantum technologies. Here, a carbon source for focused ion beams is developed and utilized for the simultaneous creation of two types of quantum emitters in silicon, the W and G centers. Furthermore, a multi‐step implantation protocol is applied for the programmable activation of the G centers with a spatial resolution better than 250 nm. This approach provides a route for significant enhancement of the creation yield of single G centers in carbon‐free silicon wafers, including commercial silicon‐on‐insulator wafers. The experimental demonstration is an important step toward nanoscale engineering of telecom quantum emitters in silicon of high crystalline quality and isotope purity.

Selective area epitaxy of in-plane HgTe nanostructures on CdTe(001) substrate

Semiconductor nanowires (NWs) are believed to play a crucial role for future applications in electronics, spintronics and quantum technologies. A potential candidate is HgTe but its sensitivity to nanofabrication processes restrain its development. A way to circumvent this obstacle is the selective area growth technique. Here, in-plane HgTe nanostructures are grown thanks to selective area molecular beam epitaxy on a semi-insulating CdTe substrate covered with a patterned SiO2mask. The shape of these nanostructures is defined by the in-plane orientation of the mask aperture along the <110>, <11¯0>, or <100> direction, the deposited thickness, and the growth temperature (GT). Several micron long in-plane NWs can be achieved as well as more complex nanostructures such as networks, diamond structures or rings. A good selectivity is achieved with very little parasitic growth on the mask even for a GT as low as 140 °C and growth rate up to 0.5 monolayer per second. For <110> oriented NWs, the center of the nanostructure exhibits a trapezoidal shape with {111}B facets and two grains on the sides, while <11¯0> oriented NWs show {111}A facets with adatoms accumulation on the sides of the top surface. Transmission electron microscopy observations reveal a continuous epitaxial relation between the CdTe substrate and the HgTe NW. Measurements of the resistance with four-point scanning tunneling microscopy indicates a good electrical homogeneity along the main NW axis and a thermally activated transport. This growth method paves the way toward the fabrication of complex HgTe-based nanostructures for electronic transport measurements.

In situ photoemission spectroscopies to reveal surface transfer doping on hydrogenated milled nanodiamonds

Nanodiamonds (ND) exhibit exceptional chemical, electronic, thermal, and optical properties, making them valuable for applications in nanomedicine, energy, quantum technologies, advanced lubricants, and polymer composites. Surface analysis techniques such as X-ray photoemission spectroscopy (XPS), ultraviolet photoemission spectroscopy (UPS) and reflection electron energy loss spectroscopy (REELS) are critical for understanding the surface properties of nanomaterials, including nanodiamonds. This study investigates hydrogenated milled nanodiamonds (H-MND) by integrating UPS and XPS measurements with REELS. Through in situ annealing within an ultra-high vacuum (UHV) chamber, we examine the impact of surface termination on surface conductivity, focusing on the role of adsorbates. Our findings reveal that a surface transfer doping mechanism, akin to that observed in bulk diamond, governs a pseudo p-type conductivity in H-MND. The conductivity dependence on ambient exposure, water, and subsequent annealing demonstrates its reversibility. The study also discusses the nature of electron acceptors and the influence of ND facets on conductivity.

Controlling the spontaneous emission of the telecom O-band centers in Silicon-on-Insulator with coherent dipole-quadrupole interactions on a silicon pillar lattice

The G-center in silicon-on-insulator (SOI) has emerged as a relevant single photon source due to the zero-phonon line at 1278 nm, matching the O-band of optical telecommunication wavelengths. Due to the weak emission of the G-center from planar SOI, it is necessary to enhance its emission, in terms of collection efficiency and fluorescence enhancement, to further study its optical properties for application in quantum technologies. Here we design a fabrication-ready SOI Mie-resonator made of a lattice of silicon nanopillars on silica to achieve the spontaneous emission enhancement of single G-centers. Using Si nanopillars lattice on silica with period and dimensions optimized, owing to the coherent superposition of the electric dipolar and magnetic quadrupolar electromagnetic Mie-scattering moments of the individual pillars to the periodic lattice, we show the G-center emission/decay rate enhancement averaged over it's possible dipole orientations is about 13 times compared to bulk. This corresponds to a fluorescence enhancement of about 125 times compared to bulk and about 5-6 times compared to an optimized single pillar with photon collection with a confocal objective. These results provide a fabrication pathway for out-of-plane single photon collection from the SOI G-center or other telecom O-band single-photon sources for their potential deployment in CMOS-compatible quantum optical technologies.

In-operando microwave scattering-parameter calibrated measurement of a Josephson traveling wave parametric amplifier

Superconducting traveling wave parametric amplifiers (TWPAs) are broadband near-quantum limited microwave amplifiers commonly used for qubit readout and a wide range of other applications in quantum technologies. The performance of these amplifiers depends on achieving impedance matching to minimize reflected signals. Here, we apply a microwave calibration technique to extract the S-parameters of a Josephson junction based TWPA in-operando. This enables reflections occurring at the TWPA and its extended network of components to be quantified, and we find that the in-operation performance can be well described by the off-state measured S-parameters.

Optimized higher-order photon state classification by machine learning

The classification of higher-order photon emission becomes important with more methods being developed for deterministic multiphoton generation. The widely used second-order correlation g(2) is not sufficient to determine the quantum purity of higher photon Fock states. Traditional characterization methods require a large amount of photon detection events, which leads to increased measurement and computation time. Here, we demonstrate a machine learning model based on a 2D Convolutional Neural Network (CNN) for rapid classification of multiphoton Fock states up to |3⟩ with an overall accuracy of 94%. By fitting the g(3) correlation with simulated photon detection events, the model exhibits an efficient performance particularly with sparse correlation data, with 800 co-detection events to achieve an accuracy of 90%. Using the proposed experimental setup, this CNN classifier opens up the possibility for quasi-real-time classification of higher photon states, which holds broad applications in quantum technologies.

Hexagonal Boron Nitride Based Photonic Quantum Technologies.

Hexagonal boron nitride is rapidly gaining interest as a platform for photonic quantum technologies, due to its two-dimensional nature and its ability to host defects deep within its large band gap that may act as room-temperature single-photon emitters. In this review paper we provide an overview of (1) the structure, properties, growth and transfer of hexagonal boron nitride; (2) the creationof colour centres in hexagonal boron nitride and assignment of defects by comparison with ab initio calculations for applications in photonic quantum technologies; and (3) heterostructure devices for the electrical tuning and charge control of colour centres that form the basis for photonic quantum technology devices. The aim of this review is to provide readers a summary of progress in both defect engineering and device fabrication in hexagonal boron nitride based photonic quantum technologies.

Implementing arbitrary multimode continuous-variable quantum gates with fixed non-Gaussian states and adaptive linear optics

Non-Gaussian quantum gates are essential components for optical quantum information processing. However, the efficient implementation of practically important multimode higher-order non-Gaussian gates has not been comprehensively studied. We propose a measurement-based method to directly implement general, multimode, and higher-order non-Gaussian gates using only fixed non-Gaussian ancillary states and adaptive linear optics. Compared to existing methods, our method allows for a more resource-efficient and experimentally feasible implementation of multimode gates that are important for various applications in optical quantum technology, such as the two-mode cubic quantum nondemolition gate or the three-mode continuous-variable Toffoli gate, and their higher-order extensions. Our results will expedite the progress toward fault-tolerant universal quantum computing with light. Published by the American Physical Society 2024

Emergent Optical Resonances in Atomically Phase-Patterned Semiconducting Monolayers of WS2.

Atomic-scale control of light-matter interactions represents the ultimate frontier for many applications in photonics and quantum technology. Two-dimensional semiconductors, including transition-metal dichalcogenides, are a promising platform to achieve such control due to the combination of an atomically thin geometry and convenient photophysical properties. Here, we demonstrate that a variety of durable polymorphic structures can be combined to generate additional optical resonances beyond the standard excitons. We theoretically predict and experimentally show that atomic-sized patches of the 1T phase within the 1H matrix form unique electronic bands that lead to the emergence of robust optical resonances with strong absorption, circularly polarized emission, and long radiative lifetimes. The atomic manipulation of two-dimensional semiconductors opens unexplored scenarios for light harvesting devices and exciton-based photonics.

Mapping of Vibrational Modes Revealing a Strong and Tunable Coupling in Two Juxtaposed 3R-WSe2 Nanodrums.

Two-dimensional (2D) material resonators have emerged as promising platforms for advanced nanomechanical applications due to their exceptional mechanical properties, tunability, and nonlinearities. We explored the strong mechanical mode coupling between two adjacent 3R-WSe2 nanodrums at room temperature. Combining a piezoelectric material, as noncentrosymmetric 3R-WSe2, and vibration manipulation is the building block for phononic experiments with 2D materials. By strategically placing gate grids beneath each resonator and mapping the spatial distribution of these modes, we demonstrate the ability to transit between localized modes in individual membranes to delocalized, strongly coupled modes that span the entire suspended region. The coherent coupling is strongly tunable with simple gate voltage, and remarkable resonance splitting was achieved, corresponding to up to 5% of the vibration frequency. These results showcase the potential of 2D material resonators for efficient information exchange, paving the way for novel applications in quantum technologies and nanoscale sensing.

Enhancement of Nonreciprocal Entanglement and Transmission via Phase‐Dependent Unidirectional Coupling

AbstractThe nonreciprocal property of quantum systems is crucial for chiral quantum networks. In this study, a phase‐controlled scheme is proposed to enhance the nonreciprocal quantum entanglement and optical transmission in a cavity optomechanical system by introducing a phase‐dependent unidirectional coupling between two whispering‐gallery‐mode (WGM) resonators. The Sagnac effect induced by the spinning resonator generates nonreciprocity, while the interference effect between direct evanescent coupling and indirect phase‐dependent unidirectional coupling significantly enhances entanglement under the anti‐Stokes sideband. For specific coupling phases, ideal nonreciprocity can be achieved in both entanglement and transmission. The proposed phase‐controlled nonreciprocity presented offers an effective strategy for constructing a unidirectional quantum channel and implementing an optical diode in chiral quantum networks, thereby opening up new possibilities for applications in quantum technologies.

Valley Spin-Polarization of MoS2 Monolayer Induced by Ferromagnetic Order in an Antiferromagnet.

Transition metal dichalcogenide (TMD) monolayers exhibit unique valleytronics properties due to the dependency of the coupled valley and spin state at the hexagonal corner of the first Brillouin zone. Precisely controlling valley spin-polarization via manipulating the electron population enables its application in valley-based memory or quantum technologies. This study uncovered the uncompensated spins of the antiferromagnetic nickel oxide (NiO) serving as the ferromagnetic (FM) order to induce valley spin-polarization in molybdenum disulfide (MoS2) monolayers via the magnetic proximity effect (MPE). Spin-resolved photoluminescence spectroscopy (SR-PL) was employed to observe MoS2, where the spin-polarized trions appear to be responsible for the MPE, leading to a valley magnetism. Results indicate that local FM order from the uncompensated surface of NiO could successfully induce significant valley spin-polarization in MoS2 with the depolarization temperature approximately at 100 K, which is relatively high compared to the related literature. This study reveals new perspectives in that the precise control over the surface orientation of AFMs serves as a crystallographic switch to activate the MPE and the magnetic sustainability of the trion state is responsible for the observed valley spin-polarization with the increasing temperature, which promotes the potential of AFM materials in the field of exchange-coupled Van der Waals heterostructures.

Spatial entanglement between two quantum walkers with exchange symmetric coins

We investigate how the initial and final exchange symmetries between the two-coin states influence the spatial entanglement dynamics between the two corresponding quantum walkers. Notably, when the initial state is anti-symmetric and the final measurement on the coins yields symmetric outcomes, all the initial entanglement will be transferred to the spatial degrees of freedom, regardless of when the coins are measured. Conversely, if the final outcomes are anti-symmetric, the spatial entanglement exhibits damped oscillation with a period (T) being inversely proportional to the coin operator parameter (θ). These behaviours are reversed for symmetric initial states. Moreover, we also observe the same spatial entanglement damping regardless of the initial state when the post-selected results lack symmetry. Our findings reveal how symmetries affect the entanglement dynamics in quantum walks, offering potential insights for applications in quantum technology.

Ultra-low frequency noise external cavity diode laser systems for quantum applications

We present two distinct ultra-low frequency noise lasers at 729 nm with a fast frequency noise of 30 Hz2/Hz, corresponding to a Lorentzian linewidth of 0.1 kHz. The characteristics of both lasers, which are based on different types of laser diodes, are investigated using experimental and theoretical analysis with a focus on identifying the advantages and disadvantages of each type of system. Specifically, we study the differences and similarities in mode behavior while tuning frequency noise and linewidth reduction. Furthermore, we demonstrate the locking capability of these systems on medium-finesse cavities. The results provide insights into the unique operational characteristics of these ultra-low noise lasers and their potential applications in quantum technology that require high levels of control fidelity.

Photonic quantum walk with ultrafast time-bin encoding

The quantum walk (QW) has proven to be a valuable testbed for fundamental inquiries in quantum technology applications such as quantum simulation and quantum search algorithms. Many benefits have been found by exploring implementations of QWs in various physical systems, including photonic platforms. Here, we propose a platform to perform quantum walks based on ultrafast time-bin encoding (UTBE) and all-optical Kerr gating. This platform supports the scalability of quantum walks to a large number of steps and walkers while retaining a significant degree of programmability. More importantly, ultrafast time bins are encoded at the picosecond time scale, far away from mechanical fluctuations. This enables the scalability of our platform to many modes while preserving excellent interferometric phase stability over extremely long periods of time without requiring active phase stabilization. Our 18-step QW is shown to preserve interferometric phase stability over a period of 50 h, with an overall walk fidelity maintained above 95%.