Abstract
AbstractCarbon implantation at the nanoscale is highly desired for the engineering of defect‐based qubits in a variety of materials, including silicon, diamond, silicon carbide (SiC) and hexagonal boron nitride (hBN). However, the lack of focused carbon ion beams does not allow for the full disclosure of their potential for application in quantum technologies. Here, a carbon source for focused ion beams is developed and utilized for the simultaneous creation of two types of quantum emitters in silicon, the W and G centers. Furthermore, a multi‐step implantation protocol is applied for the programmable activation of the G centers with a spatial resolution better than 250 nm. This approach provides a route for significant enhancement of the creation yield of single G centers in carbon‐free silicon wafers, including commercial silicon‐on‐insulator wafers. The experimental demonstration is an important step toward nanoscale engineering of telecom quantum emitters in silicon of high crystalline quality and isotope purity.
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