Photodetector Applications Research Articles

Fabrication of Bi-doped In2S3 thin films for highly sensitive UV photodetector applications

Fabrication of highly sensitive, high-speed photodetectors, especially using cost-effective and less toxic materials, has attracted continuous attention due to their outstanding advantages. In this report, we present different properties of Bi-doped (0,1, 3, and 5 wt%) In2S3 thin films for UV photodetectors. Bi-doped (0, 1, 3, and 5 wt%) In2S3 thin films were coated on glass substrates at a temperature of 350 °C using a low-cost nebulizer spray pyrolysis method. X-ray diffraction XRD analysis confirmed the cubic phase β-In2S3 for all the deposited films and high crystallinity is obtained for 1 wt% Bi-doped film. The presence of densely packed grains in 1 wt% Bi-doped In2S3 thin film and also small grains observed for undoped In2S3 sample is evident form morphology studies. Bi doping has caused an enhancement of optical absorption and incorporation of 1 wt% of Bi3+ into In2S3 has shifted the optical band gap from 2.87 to 2.78 eV. Current − Voltage characteristics and Current–Time characterization are used to know the key parameters of the photodetectors. Among all fabricated photodetectors, the In2S3 thin film doped with 1 wt% Bi showed superior photodetector performance with calculated Responsivity (R), Detectivity (D*), and External quantum efficiency (EQE) values of 0.65 AW−1, 15 × 1010 Jones, 125 % respectively. Transient photo-response analysis showed low rise and fall time of 3.21 and 3.78 s respectively for the 1 wt% Bi-doped sample. Optimally doped In2S3: Bi (1 wt%) thin film is most suited to fabricate photo sensing-based optoelectronic devices in UV region of the spectrum.

Testing the physical properties stability of Zinc (8-hydroxyquinoline) thin films toward stable photodetection performance: Effect of annealing

In this study, the effect of thermal annealing on the structural and optical properties of thermally evaporated zinc (8-hydroxyquinoline) (ZnQ2) thin films is discussed in detail. Differential scanning calorimetry analysis revealed the thermal stability of the ZnQ2 powder up to 540 K. Fourier transform infrared spectrometer characterizations revealed the stability of the ZnQ2 molecular structure up to 423 K. The annealing effect on the surface morphology of the ZnQ2 films was tracked using the field emission scanning electron microscope (FE-SEM) technique, which revealed grain growth up to 423 K achieving the highest surface smoothness. Moreover, UV–Vis-NIR spectrophotometric measurements were used to examine how annealing affects the optical characteristics of the prepared films. The optical bandgap of ZnQ2 augmented when the annealing temperature increased to 373 K. The dispersion parameters were estimated from the analysis of the complex refractive index following the single oscillator model. The behavior of nonlinear optical susceptibility suggested the validity of utilizing ZnQ2 thin films in IR and UV optical switching applications and UV photodetection applications.

Synthesis of ZnO nanorods decorating with Ag nanoparticles on flexible polyimide substrate for visible photodetector application

Polyimide (PI), which have many remarkable features such as excellent mechanical strength, outstanding thermal stability, exceptional electric properties, etc, is a potential carrier for optoelectronic devices due to its abundant applications. However, because of chemical inertness and smooth surface that led to the growth of materials on this substrate being more complex than that on rigid substrate, thus, this report aims to emphasise the synthesis of ZnO NRs decorated with the Ag NPs on flexible substrate for photodetector application. In this study, we successfully synthesise ZnO NRs/Ag NPs on a flexible PI substrate by the hydrothermal method. The performance of our photodetector in visible region (395 nm) exhibits via the responsivity of the device, which recorded value of ca. 40.16 mA W−1 at 1.66 mW cm−2. With obtained results, our research can pave the way for future studies based on flexible optoelectronic devices.

Influence of deposition temperature on the defect mediated persistence photo-conducting behaviour of spray coated Zn0.96Nd0.04O thin films

The incorporation of Neodymium into ZnO lattice enhances the photo conducting property of the deposited films which are strongly dependent on preparation conditions. Hence, the comprehensive work carried out to understand the influence of deposition temperature (300 °C–500 °C) on the persistence photoconductivity of Zn0.96Nd0.04O films deposited on glass substrates using spray pyrolysis method. The maximum crystallite size of ∼16.3 nm with minimum dislocation density and strain values were noticed for the films deposited at 450 °C. The mixed fibrous -granular morphology was noticed in the deposited films. The maximum transparency above 90 % in the visible region and an increased bandgap of 3.42 eV was observed in the films deposited at 450 °C. The percentage of defects were calculated using the area under the curve of photoluminescence spectra. The charge carrier density of 1.7 × 1017 cm−3, mobility of 62.8 cm2/Vs and lesser resistivity of 1.3 × 102 Ω cm were noted for the films deposited at 450 °C. Under the illumination of UV light, the photocurrent of Zn0.96Nd0.04O films deposited at 450 °C increased by four orders. The persistence in the photo resistance was due to the presence of Zn and O related defects, which acts as trap centres. The variation of photo resistance with time indicates the films deposited at 450 °C has faster photo response due to the faster electron – hole recombination process. The maximum photocurrent at 360 nm was noted for the films synthesized at 450 °C due to improved crystallinity with stoichiometry nature of the films. Hence, the Zn0.96Nd0.04O films deposited at 450 °C suitable for light dependent resistor and fixed wavelength UV photodetector applications.

A study on structural and electronic properties of WS2/SnS2 composite thin films by CBD method

The composite WS2/SnS2 thin films deposited by CBD have been studied for variations in deposition time and sulfur concentration. XRD results show a polycrystalline hexagonal phase with crystallite size varying from ∼ 3.56 nm to ∼ 16.35 nm in composite thin films. The optical absorption spectra of S-2 show maximum absorption peaks in 380 nm to 800 nm. The band gap was calculated to be ∼ 1.52 eV to ∼ 2.5 eV. We measured the current–voltage characteristics across the junction to determine the transport properties. A photodetector application involving the WS2/SnS2 composite structure shows a maximum specific detectivity of 6.2 x 1013 Jones. The reason for varying the electrical parameters discussed in this work.

Near‐Infrared Light Trapping and Avalanche Multiplication in Silicon Epitaxial Microcrystals

AbstractThe chemical vapor deposition of silicon on a patterned silicon substrate leads to the formation of 3D microcrystals, which, due to their inclined top facets and high aspect ratio, produce a light‐trapping effect enhancing the optical absorption in the near‐infrared (NIR). In this work, it is demonstrated that Si microcrystals can form the building blocks of a new class of NIR sensitive photodetectors operating in a linear or avalanche regime. Microcrystal‐based devices are designed by coupling a 2D kinetic‐growth model with a Poisson drift‐diffusion solver and fabricated by combining electron beam lithography and low‐energy plasma‐enhanced chemical vapor deposition (LEPECVD). The optoelectronic properties of microcrystal‐based p–i–n photodiodes are investigated both theoretically and experimentally by means of finite‐difference time‐domain (FDTD) simulations and responsivity measurements. At 1000 nm wavelength, the responsivity of microcrystal‐based devices is six times higher than that of an equivalent mesa diode. Moreover, the photocurrent gains of Si microcrystals operating as an avalanche photodiode (APD), at the same wavelength, reaches 2 × 104 demonstrating the potentialities of substrate patterning, combined with epitaxial growth, for amplified photodetection applications.

Non-monotonic thermal conductivity modulation in colloidal quantum dot superlattices via ligand engineering

Colloidal quantum dots (QDs), which consist of inorganic cores surrounded by soft organic ligands, can self-assemble into superlattices exhibiting long-range order. Their tunability, in terms of size, shape, and ligand properties, makes them promising for applications in solar cells, photodetectors, and light-emitting diodes. However, the complex interplay between ligand stiffness, QDs cores-ligands coupling strength, and its impact on QDs' morphology and thermal properties is not well understood. This work employs molecular dynamics simulations to investigate the possibility of modulating the thermal conductivity of QDs superlattices via ligand engineering. It is found that the structural stability of QDs superlattices depends significantly on the interaction strength between the QDs cores and ligands. At lower interaction strengths, the instability manifests itself in a random fusion of the QDs cores, while at intermediate strengths a stable simple cubic lattice structure is maintained. Higher interaction strengths lead to amorphization in the surface regions of QDs core. We observed a nonlinear trend in the thermal conductivity with varying QD-ligand interaction strengths due to competing factors: fusion of QDs cores at lower interaction strengths and increased crosslinking interaction among ligands at higher interaction strengths. The influence of ligand stiffness on thermal conductivity was found to be minimal. This study provides a deep insight into the role of ligand stiffness and interaction strength on structural dynamics and thermal transport in QDs superlattice and demonstrates the feasibility of engineering thermal transport in QDs superlattice via ligand engineering.

Wide‐Gap Perovskites for Indoor Photovoltaics

Organic–inorganic halide perovskite semiconductors have revolutionized next‐generation photovoltaics (PV) due to several characteristics such as solution‐processability, gap tunability, and excellent charge generation and transport properties. This has made them very adaptable for various applications in light harvesting and photodetection. One such rapidly growing application is indoor photovoltaics (IPV) which have the potential to power standalone Internet of Things devices. IPV requires wider optimal bandgaps than solar cells (1.8 vs 1.3 eV) due to the differences between the spectra of artificial lights versus solar radiation. For IPV applications, the active layer wide‐gap perovskite must be developed systemically considering all other components of the device, such as interlayers, electrodes, and scaling. This perspective provides an overview of the potential and challenges facing perovskite‐based IPV from a theoretical, material, and experimental perspective. Furthermore, accurate characterization of perovskite IPVs under simulated indoor conditions is discussed and candidate perovskite PV (PPV) systems are presented to provide insight into IPV development. These include IPV‐optimized formamidinium cesium‐based perovskite, wide‐gap p‐i‐n devices, and 2D perovskite devices, tested under spectrophotometrically calibrated LED illumination at various indoor‐relevant illuminances and benchmarked against thermodynamic predictions. Finally, strategies required to create stable, optimized PPV devices for indoor applications are discussed.

Interface‐Engineering Induced Swift and Controllable Solar‐Blind Photoresponse in Ga2O3/SiC Heterojunction Based on Unconventional Rectification Characteristics

AbstractGa2O3 photodetectors with demonstrated high sensitivity provide a potential subversive scheme for solar‐blind photodetection. However, the planar structure and the relatively slow response speed of the device have restricted the integration and application of Ga2O3 photodetectors. Herein, a narrow SiO2 barrier layer is introduced on the commercial SiC substrate, and a vertical photodetector is realized based on β‐Ga2O3/SiO2/SiC heterostructure with controllable tunneling effect by tailoring the band structure at the interface. The developed device exhibits unconventional rectification characteristics and photoresponse performance in different biasing modes owing to the controllable tunneling effect at the interface. In particular, the photodetector achieves a high responsivity (186.8 A W−1) under solar‐blind illumination at reverse bias, while exhibiting obvious advantages in dark current (3 pA), photo‐to‐dark current ratio (8.8 × 106), linear dynamic range (138.8 dB), and specific detectivity (1.4 × 1015 Jones) at forward bias. The photodetector also demonstrates excellent photoresponse stability after 6 months in air without encapsulation. In addition, an alternating biasing strategy, inspired by its bidirectional operability, is proposed to suppress the persistent photoconductivity effect and increase the decay speed by 1.23 × 105 times. This work provides a referable strategy for the further development of high‐performance Ga2O3‐based photoelectronics.

CuS-CuO nanoparticles for antennas collect light through their conductivity by absorbing a single photon located at the wavelength of 254 nm

CuS-CuO nanoparticles were prepared by air annealing as-made CuS nanoparticles deposited using spray pyrolysis. The optical, structural, and morphological properties of samples were investigated by UV–VIS Spectroscopy, X-ray diffraction (XRD), Scanning Electron Microscopy (SEM), and Atomic Force Microscopy (AFM). The XRD analysis of as-prepared sample include two phases CuS and Cu2S, while annealed films are a mixture of CuS and CuO phases. The dimensions of the CuS crystallites were estimated by Williamson's method on the diffraction peaks (81 nm) while the dimensions of the CuO ones were statistically evaluated via the SEM image (95 nm) and corroborated by Williamson's method on the diffraction peaks (98 nm). SEM study of annealed samples reveals that nanoparticles are monocrystalline. Optical analysis shows more than 80 % transmittance through sample thickness 164 nm in the infrared region and two energy bandgaps of 1.92 and 2.50 eV in the visible region associated with CuO and CuS, respectively. In addition, we observe after several optical excitations that only the UV wavelength of 254 nm gives a tangible electrical response. We understand from the literature that this is only possible through one interpretation of the antenna effect. Optical antennas aim to freely change light rays into local energy. In fact, our sample presents nanoparticles with sizes around 80 nm that show clear absorption through the development of their reproducible resistance that increases with polarization toward saturation after 5 V. Therefore, we propose using prepared nanoparticles in a light-harvesting antenna for artificial photodetector and other optoelectronic applications.

Environmental-Friendly Ag2S QD-Multilayer MoSe2 van Der Waals Heterostructure for High-Performance Broadband Photodetection.

Broadband photodetectors have drawn intensive attention owing to their wide application prospects in optical communication, imaging, astronomy, and so on. Two-dimensional transition-metal dichalcogenides (TMDs) are considered as highly potential candidates for photodetection applications, benefiting from their excellent photoelectric properties. However, most of the photodetectors based on TMDs suffer from low performance in the near-infrared (NIR) region due to the weak optical absorption efficiency near their absorption band edge, which severely constrains their usage for broadband optoelectronics. Here, by taking advantage of the high absorption coefficient and environment-friendly property of Ag2S quantum dots (QDs), the hybrid of multilayer MoSe2/Ag2S QDs is demonstrated with a high-performance broadband photodetection capability (532-1270 nm). The favorable energy band alignment of MoSe2/Ag2S QDs facilitates effective separation and collection of photogenerated carriers, and the heterostructure device exhibits significant enhancement of performance compared to the bare MoSe2 device. High responsivity, detectivity, and external quantum efficiency of 25.5 A/W, 1.45 × 1011 Jones, and 1070% are obtained at a low working voltage of 1 V under 980 nm illumination. The responsivity of the device can reach up to 1.2 A/W at 1270 nm wavelength, which is competitive to the commercial NIR photodetectors. Meanwhile, broadband imaging capability is demonstrated. Our work may open up a facile and eco-friendly approach to construct high-performance broadband photodetectors for next-generation compact optoelectronic applications.

The Transfer Dehydrogenation Method Enables a Family of High Crystalline Benzimidazole‐linked Cu (II)‐phthalocyanine‐based Covalent Organic Frameworks Films

AbstractHeterocycle‐linked phthalocyanine‐based COFs with close‐packed π–π conjugated structures are a kind of material with intrinsic electrical conductivity, and they are considered to be candidates for photoelectrical devices. Previous studies have revealed their applications for energy storage, gas sensors, and field‐effect transistors. However, their potential application in photodetector is still not fully studied. The main difficulty is preparing high‐quality films. In our study, we found that our newly designed benzimidazole‐linked Cu (II)‐phthalocyanine‐based COFs (BICuPc‐COFs) film can hardly formed with a regular aerobic oxidation method. Therefore, we developed a transfer dehydrogenation method with N‐benzylideneaniline (BA) as a mild reagent. With this in hand, we successfully prepared a family of high crystalline BICuPc‐COFs powders and films. Furthermore, both of these new BICuPc‐COFs films showed high electrical conductivity (0.022–0.218 S/m), higher than most of the reported COFs materials. Due to the broad absorption and high conductivity of BICuPc‐COFs, synaptic devices with small source‐drain voltage (VDS=1 V) were fabricated with response light from visible to near‐infrared. Based on these findings, we expect this study will provide a new perspective for the application of conducting heterocycle‐linked COFs in synaptic devices.

The Transfer Dehydrogenation Method Enables a Family of High Crystalline Benzimidazole-linked Cu (II)-phthalocyanine-based Covalent Organic Frameworks Films.

Heterocycle-linked phthalocyanine-based COFs with close-packed π-π conjugated structures are a kind of material with intrinsic electrical conductivity, and they are considered to be candidates for photoelectrical devices. Previous studies have revealed their applications for energy storage, gas sensors, and field-effect transistors. However, their potential application in photodetector is still not fully studied. The main difficulty is preparing high-quality films. In our study, we found that our newly designed benzimidazole-linked Cu (II)-phthalocyanine-based COFs (BICuPc-COFs) film can hardly formed with a regular aerobic oxidation method. Therefore, we developed a transfer dehydrogenation method with N-benzylideneaniline (BA) as a mild reagent. With this in hand, we successfully prepared a family of high crystalline BICuPc-COFs powders and films. Furthermore, both of these new BICuPc-COFs films showed high electrical conductivity (0.022-0.218 S/m), higher than most of the reported COFs materials. Due to the broad absorption and high conductivity of BICuPc-COFs, synaptic devices with small source-drain voltage (VDS=1 V) were fabricated with response light from visible to near-infrared. Based on these findings, we expect this study will provide a new perspective for the application of conducting heterocycle-linked COFs in synaptic devices.

Multi-effect coupling enhanced self-powered heterojunction ultraviolet photodetector with ultra-low detection limit

Convenient, small-sized, and self-powered sensor units are easier to integrate, making them the future development direction of photodetectors. GaN materials with wide band gap are powerful candidates for UV detection, but most GaN based self-powered UV photodetectors have poor detection ability for the weak UV light, which limits their applications. This study reports a self-powered UV photodetector based on BaTiO3/GaN heterojunction, which can detect ultra-weak UV light at a minimum of 0.68 nW/cm2 by coupling the ferroelectric polarization, anti-reflection effect, and pyro-phototronic effect. The polarized BaTiO3 thin film on the surface of GaN has an enhanced residual polarization field and generated anti-reflection effect, which can regulate the heterojunction band structure, suppress the dark current and minimize surface reflection of GaN. Simultaneously enhanced pyro-phototronic effect can significantly improve the response speed and responsivity of the device. The response time and recovery time of the device are as low as 8.794 ms and 5.018 ms. The maximum responsivity and detectivity are 88.206 mA/W and 7.392 × 1013 Jones, respectively, increased by 359% and 6065% compared to the device before polarization. Thanks to excellent material stability, the device has a sensitive and uniform response to continuously incident UV light. In addition, by simulating flame generation, it has been proven that the device has brilliant performance in flame detection and can achieve remote monitoring and fire warning functions. These results can promote the potential application of self-powered UV photodetectors based on BaTiO3/GaN heterojunction in environmental monitoring and space communication fields.

Amplifying Photon Upconversion in Alloyed Nanoparticles for a Near-Infrared Photodetector.

Photon upconverison has attracted a substantial amount of interest in diverse fields due to its characteristic anti-Stokes emissions. However, obtaining intense emission under low-power laser irradiation has remained a challenge. Here we report a mechanistic design of activator-sensitizer alloyed nanoparticles to achieve bright upconversion under weak infrared irradiation. This design allows a nearest sensitizer-activator separation to facilitate efficient energy transfer that results in remarkably enhanced upconversion (>2 orders of magnitude) under 0.26 W cm-2 irradiation compared to that of the Er sublattice, and the upconversion quantum yield also shows a 20-fold increase. Interestingly, the alloyed nanoparticles exhibit a gradual change in emission color with an increase in Yb3+ content, and moreover, their emission colors can be dynamically controlled by simply modulating the excitation laser power and pulse widths. Such alloyed nanoparticles show great promise for application in a near-infrared photodetector.

Gas-Liquid Interface Route to Hybrid Copper Bromine Perovskite Single-Crystal Membrane with Dielectric Transitions and Ferromagnetic Exchanges.

Single-crystal membranes (SCMs) show great promise in the fields of sensors, light-emitting diodes, and photodetection. However, the growth of a large-area single-crystal membranes is challenging. We report a new organic-inorganic SCMs [HCMA]2CuBr4 (HCMA = cyclohexanemethylamine) crystallized at the gas-liquid interface. It also has low-temperature ferromagnetic order, high-temperature dielectric anomalies, and narrow band gap indirect semiconductor properties. Specifically, the reversible phase transition of the compound occurs at 350/341 K on cooling/heating and exhibits dielectric anomalies and stable switching performance near the phase transition temperature. The ferromagnetic exchange interaction in the inorganic octahedra and the organic layer enables ferromagnetic ordering at low-temperature 10 K. Finally, the single crystal exhibits an indirect semiconducting property with a narrow band gap of 0.99 eV. Such rich multichannel physical properties make it a potential application in photodetection, information storage and sensors.

Characterization of Nanocrystalline SnS Thin Film Fabricated used PLD Method for Photodetection Applications

Pulsed laser deposition was used to create tin sulfide (SnS) nanoparticles with a Nd:YAG laser (700 mJ) with laser pulses of (200, 250, 300, and 350 pulses). Nanoparticles were created and investigated using XRD, AFM, and UV-Vis spectroscopy to understand their optical, topographical, and electrical properties. After that, a SnS photodetector was built for the first time, and its performance, photoresponse, and sensitivity were evaluated. The development of monocrystalline SnS films was confirmed by X-ray diffraction (XRD) examination. Clear crystallization with increased crystalline size and the optimum orientation was observed in the sample synthesized SnS thin film treated with 300 pulses. The crystallite size increased from 44 at 200 to 77 nm for 350 pulses. These films were characterized by better surface morphology with (111) preferred crystals. In addition, atomic force microscopy (AFM) studies showed that the average diameter of generated SnS nanoparticles rose from (39.4 nm to 64.7) nm when the laser pulses increased in pulsed laser deposition. Transmission measurements were used to determine the films' absorption coefficient energy gap (Eg), and they showed that the optical transition was direct and that the transmittance value dropped with increasing laser pulses. Band gap energy is reduced from 2.139 to 1.773 eV. Moreover, Hall Effect measurements on all samples demonstrate that all thin films were n-type, with charge carrier concentration increasing with increased pulses and carrier mobility decreasing with increased pulses. The photodetectors ' photosensitivity was evaluated in the dark after depositing Al contacts on SnS thin films through a metal mask. The Pulses of enhancement cause a red shift in the values of particular detectivity and quantum efficiency. The highest responsivity was obtained at 350 pulses, 6.72×10−1 AW−1. The high (QE) of 150% at 200 p and detectivity of 2.9×1011 cm, Hz1/2.W-1 at 300p.

Graphene-based terahertz tunable double-broadband perfect absorber

The rapid advancement of terahertz(THz) technology has sparked significant interest in exploring tunable broadband functional devices. In this study, we propose an antisymmetric graphene skeletonized structure to achieve a terahertz double-broadband perfect absorber. This absorber consists of a gold (Au) substrate, a TOPAS dielectric layer and C4 regular antisymmetric-patterned graphene embedded in the polymer. It exhibits two unpolarized perfect absorbing broadbands through the resonance mechanisms of localized surface-isolated exciton resonance and electromagnetic dipole resonance. The results indicate high absorbance exceeding 90% across two distinct frequency ranges of 0.93–2.03 THz and 4.16–5.3 THz. The dual-broadband absorption feature stems from the pronounced aggregation effect of the “Hollow-out corner” on the electric field, enabling modulation of the second Harmonic while leaving the first Harmonic largely unaffected. The absorber’s response can be dynamically tuned through adjusting the Fermi energy level and structural parameters of graphene. Our design opens up possibilities for diverse applications in photodetectors, THz modulation, and stealth technologies.

Highly Polarization-Deep-Ultraviolet-Sensitive β-Ga2O3 Epitaxial Films by Disrupting Rotational Symmetry and Encrypted Solar-Blind Optical Communication Application.

Ultrawide bandgap semiconductor β-Ga2O3 (4.9 eV), with its monoclinic crystal structure, exhibits distinct anisotropic characteristics both optically and electrically, making it an ideal material for solar-blind polarization photodetectors. In this work, β-Ga2O3 epitaxial films were deposited on sapphire substrates with different orientations, and the mechanisms underlying the anisotropy of these epitaxial films were investigated. Compared to c-plane sapphire, the lattice mismatch between m- or r-plane sapphire and β-Ga2O3 is more pronounced, disrupting the rotational symmetry of the films and rendering them anisotropic. Thanks to the improved anisotropy, the polarization ratio of the photodetector based on β-Ga2O3 films grown on r-plane substrates is 0.24, nearly ten times higher than that on c-plane substrates. Finally, by utilizing these polarization-sensitive photodetectors, we developed an encrypted solar-blind ultraviolet optical communication system. Our work provides a new approach to facilitate the fabrication and application of high-performance polarization-sensitive solar-blind photodetectors.

Low Stress TSV Arrays for High-Density Interconnection

In three-dimensional (3D) stacking, the thermal stress of through-silicon via (TSV) has a significant influence on chip performance and reliability, and this problem is exacerbated in high-density TSV arrays. In this study, a novel hollow tungsten TSV (W–TSV) is presented and developed. The hollow structure provides space for the release of thermal stress. Simulation results showed that the hollow W–TSV structure can release 60.3% of thermal stress within the top 2 μm from the surface, and thermal stress can be decreased to less than 20 MPa in the radial area of 3 μm. The ultra-high-density (1600 TSV∙mm−2) TSV array with a size of 640 × 512, a pitch of 25 μm, and an aspect ratio of 20.3 was fabricated, and the test results demonstrated that the proposed TSV has excellent electrical and reliability performances. The average resistance of the TSV was 1.21 Ω. The leakage current was 643 pA and the breakdown voltage was greater than 100 V. The resistance change is less than 2% after 100 temperature cycles from −40 to 125 °C. Raman spectroscopy showed that the maximum stress on the wafer surface caused by the hollow W–TSV was 31.02 MPa, which means that there was no keep-out zone (KOZ) caused by the TSV array. These results indicate that this structure has great potential for applications in large-array photodetectors and 3D integrated circuits.