Applications In Nanoelectronics Research Articles

“Sol-gel auto combustion synthesis of Al3+-Gd3+ ions co-doped cobalt ferrite nanoparticles for nanoelectronics applications”

“Sol-gel auto combustion synthesis of Al3+-Gd3+ ions co-doped cobalt ferrite nanoparticles for nanoelectronics applications”

Picometer-Level In Situ Manipulation of Ferroelectric Polarization in Van der Waals layered InSe.

Ferroelectric 2D van der Waals (vdW) layered materials are attracting increasing attention due to their potential applications in next-generation nanoelectronics and in-memory computing with polarization-dependent functionalities. Despite the critical role of polarization in governing ferroelectricity behaviors, its origin and relation with local structures in 2D vdW layered materials have not been fully elucidated so far. Here, intralayer sliding of approximately six degrees within each quadruple-layer of the prototype 2D vdW ferroelectrics InSe is directly observed and manipulated using sub-angstrom resolution imaging and in situ biasing in an aberration-corrected scanning transmission electron microscope. The in situ electric manipulation further indicates that the reversal of intralayer sliding can be achieved by altering the electric field direction. Density functional theory calculations reveal that the reversible picometer-level intralayer sliding is responsible for switchable out-of-plane polarization. The observation and manipulation of intralayer sliding demonstrate the structural origin of ferroelectricity in InSe and establish a dynamic structural variation model for future investigations on more 2D ferroelectric materials.

Electronic structure investigation and anisotropic phonon anharmonicity in ternary ZrGeTe4 single crystals

Ternary two-dimensional (2D) transition metal chalcogenides have gained immense attention because of their ability to overcome the intrinsic limitations of their binary counterparts. Layered 2D materials are important for future electronic and photonic devices owing to their low structural symmetry and in-plane anisotropy with tunable bandgap. Herein, the electronic structure and detailed vibrational properties of bulk ZrGeTe4 layered single crystals were investigated using angle-resolved photoemission spectroscopy (ARPES) and Raman scattering (RS). The ARPES results revealed an anisotropic Fermi surface of different momentum along kx and ky from the zone center and an anisotropic band structure with varying band curvatures along the high-symmetry directions. Furthermore, the RS of ZrGeTe4 was investigated under different polarizations and varying temperatures. The polarized RS exhibited twofold and fourfold symmetry orientations in different configurations, revealing the anisotropic phonon dispersions for bulk ZrGeTe4. The observed softening of Raman modes was corroborated with the anharmonic phonon dispersion, which was further supported by our third-order force constant calculations of thermal transport using density functional theory. Low lattice thermal conductivity with increasing temperature is linked with enhanced phonon–phonon scattering, which is evident from the decreased phonon lifetime and peak linewidth. In addition to these fundamental aspects, the anisotropic nature and unique layered structure of such materials reveal their bright future for next-generation nanoelectronic applications.

Reconstructive metal–semiconductor phase transition between nonlayered and layered tungsten dinitride

Reconstructive phase transitions are characterized by significant changes in the crystal structure of a material, typically accompanied by dramatic changes in its physical properties. In this Letter, via first-principles calculations, we report a reconstructive phase transition between nonlayered and layered tungsten dinitride (WN2) with kinetic energy barriers of 0.19 and 0.61 eV per formula unit depending on the transition direction. The nonlayered-to-layered transition can be triggered when an in-plane biaxial strain reaches 9.3%, while the layered-to-nonlayered transition happens at 53.5% of an out-of-plane uniaxial strain. The nonlayered and layered WN2 phases exhibit distinct structural, bonding, and electronic characteristics. Another intrinsic advantage of the reconstructive transition between layered and nonlayered phases is that it can be easily extended to two-dimensional (2D) nanoscale regions. Our results predict a rich phase diagram for 2D WN2 under strains, appealing for advanced nanoelectronics applications such as phase-change electronics or pressure sensors.

Anomalous Raman Response in 2D Magnetic FeTe Under Uniaxial Strain: Tetragonal and Hexagonal Polymorphs.

2D Fe-chalcogenides emerge with rich structures, magnetisms, and superconductivities, which spark the growing research interests in the torturous transition mechanism and tunable properties for their potential applications in nanoelectronics. Uniaxial strain can produce a lattice distortion to study symmetry breaking induced exotic properties in 2D magnets. Herein, the anomalous Raman spectrum of 2D tetragonal (t-) and hexagonal (h-) FeTe is systematically investigated via uniaxial strain engineering strategy. It is found that both t- and h-FeTe keep the structural stability under different uniaxial tensile or compressive strain up to ± 0.4%. Intriguingly, the lattice vibrations along both in-plane and out-of-plane directions exceptionally harden (softened) under tensile (compressive) strain, distinguished from the behaviors of many conventional 2D systems. Further, the difference in thickness-dependent strain effect can be well explained by their structural discrepancy between two polymorphs of FeTe. These results can supply a unique platform to explore the vibrational properties of many novel 2D materials.

Calibrated absolute optical contrast for high-throughput characterization of horizontally aligned carbon nanotube arrays

Horizontally aligned carbon nanotube (HACNT) arrays hold significant potential for various applications in nanoelectronics and material science. However, their high-throughput characterization remains challenging due to the lack of methods with both high efficiency and high accuracy. Here, we present a novel technique, Calibrated Absolute Optical Contrast (CAOC), achieved through the implementation of differential principles to filter out stray signals and high-resolution calibration to endow optical contrast with physical significance. CAOC offers major advantages over previous characterization techniques, providing consistent and reliable measurements of HACNT array density with high throughput and non-destructive assessment. To validate its utility, we demonstrate wafer-scale uniformity assessment by rapid density mapping. This technique not only facilitates the practical evaluation of HACNT arrays but also provides insights into balancing high throughput and high resolution in nanomaterial characterization.

Observation of voltage dependent negative differential resistance (NDR) in SnS2-GO nanocomposites

This study investigates the structural, optical, and electrical properties of tin disulfide (SnS2) and SnS2-graphene oxide (GO) nanosheets synthesized via chemical bath deposition method (CBD). Structural characterization confirms the formation of hexagonal crystal phases with nanosheet morphology. It shows a well distribution of nanosheet average square sizes of 10 nm for SnS2 and 6 nm for SnS2-GO. Optical analysis shows blue shifts in absorption edges compared to bulk SnS2, attributed to quantum confinement effects. Photoluminescence emission peaks exhibit different energy levels in SnS2-GO originated to native defects. The composites show a sharp reduced of PL intensity due to enhanced charge carrier separation. Electrical measurements on SnS2-GO thin films demonstrate negative differential resistance (NDR) behavior in both planar and sandwich contact configurations, suggesting electron injection/extraction mechanisms. The NDR phenomenon exhibits a dependence on voltage scan rate, indicating the involvement of electronic and ionic elements in charge transport mechanisms. Overall, this study provides insights into the NDR properties of SnS2-GO nanocomposite, laying the groundwork for their potential applications in optoelectronics and nanoelectronics.

Engineered Nanotopographies Induce Transient Openings in the Nuclear Membrane

AbstractMaterials with engineered nano‐scale surface topographies, such as nanopillars, nanoneedles, and nanowires, mimic natural structures like viral spike proteins, enabling them to bypass biological barriers like the plasma membrane. These properties have led to applications in nanoelectronics for intracellular sensing and drug delivery platforms, some of which are already in clinical trials. Here, evidence is present that nanotopographic materials can induce transient openings in the nuclear membranes of various cell types without penetrating the cells, breaching the nucleo‐cytoplasmic barrier, and allowing uncontrolled molecular exchange across the nuclear membrane. These openings, induced by nanoscale curvature, are temporary and repaired through the Endosomal Sorting Complexes Required for Transport (ESCRT)‐mediated mechanisms. The findings suggest a potential for nano\topographic materials to temporarily breach the nuclear membrane with potential applications in direct nuclear sensing and delivery.

Fabrication and Unraveling the Morphological, Structural, Optical and Dielectric Features of PMMA-SiO2/CuO Promising Ternary Nanostructures for Nanoelectronic and Photonic Applications

Fabrication and Unraveling the Morphological, Structural, Optical and Dielectric Features of PMMA-SiO2/CuO Promising Ternary Nanostructures for Nanoelectronic and Photonic Applications

Manipulating the electronic and spintronic properties in PtS2/MoTe2 heterostructure with strain

In this work, the strain engineering on the electronic and spintronic properties of PtS2/MoTe2 heterostructure is investigated by first-principle calculations. Based on the energy minimum principle, the most stable configuration of the PtS2/MoTe2 heterostructure is recognized. The mechanisms for the evolution of the band structures under different strains are analyzed by the atomic orbital projected band structures. Furthermore, a Rashba type spin texture of PtS2/MoTe2 heterostructure is predicted, with a formation mechanism revealed through atomic orbital projected spin textures. The strain tunable electronic and spintronic properties of PtS2/MoTe2 heterostructure hold great promise in applications of spintronics and nanoelectronics.

Quasi-equilibrium growth of inch-scale single-crystal monolayer α-In2Se3 on fluor-phlogopite

Epitaxial growth of two-dimensional (2D) materials with uniform orientation has been previously realized by introducing a small binding energy difference between the two locally most stable orientations. However, this small energy difference can be easily disturbed by uncontrollable dynamics during the growth process, limiting its practical applications. Herein, we propose a quasi-equilibrium growth (QEG) strategy to synthesize inch-scale monolayer α-In2Se3 single crystals, a semiconductor with ferroelectric properties, on fluor-phlogopite substrates. The QEG facilitates the discrimination of small differences in binding energy between the two locally most stable orientations, realizing robust single-orientation epitaxy within a broad growth window. Thus, single-crystal α-In2Se3 film can be epitaxially grown on fluor-phlogopite, the cleavage surface atomic layer of which has the same 3-fold rotational symmetry with α-In2Se3. The resulting crystalline quality enables high electron mobility up to 117.2 cm2 V−1 s−1 in α-In2Se3 ferroelectric field-effect transistors, exhibiting reliable nonvolatile memory performance with long retention time and robust cycling endurance. In brief, the developed QEG method provides a route for preparing larger-area single-crystal 2D materials and a promising opportunity for applications of 2D ferroelectric devices and nanoelectronics.

Phase-Change Stamp with Highly Switchable Adhesion and Stiffness for Damage-Free Multiscale Transfer Printing.

Transfer printing is a technology widely used in the production of flexible electronics and vertically stacked devices, which involves the transfer of predefined electronic components from a rigid donor substrate to a receiver substrate with a stamp, potentially avoiding the limitations associated with lithographic processes. However, the stamps typically used in transfer printing have several limitations related to unwanted organic solvents, substantial loading, film damage, and inadequate adhesion switching ratios. This study introduces a thermally responsive phase-change stamp for efficient and damage-free transfer printing inspired by the adhesion properties observed during water freezing and ice melting. The stamp employs phase-change composites and simple fabrication protocols, providing robust initial adhesion strength and switchability. The underlying mechanism of switchable adhesion is investigated through experimental and numerical studies. Notably, the stamp eliminates the need for extra preload by spontaneously interlocking with the ink through in situ melting and crystallization. This minimizes ink damage and wrinkle formation during pickup while maintaining strong initial adhesion. During printing, the stamp exhibits a sufficiently weak adhesion state for reliable and consistent release, enabling multiscale, conformal, and damage-free transfer printing, ranging from nano- to wafer-scale. The fabrication of nanoscale short-channel transistors, epidermal electrodes, and human-machine interfaces highlights the potential of this technique in various emerging applications of nanoelectronics, nano optoelectronics, and soft bioelectronics.

Ameliorating and Tailoring The Morphological, Structural, and Dielectric Characteristics of SiO2 /NiO Futuristic Nanocomposites Doped PVA-PEG for Nanoelectronic and Energy Storage Applications

Ameliorating and Tailoring The Morphological, Structural, and Dielectric Characteristics of SiO2 /NiO Futuristic Nanocomposites Doped PVA-PEG for Nanoelectronic and Energy Storage Applications

Physical confinement versus adsorption driven reconstruction: The case of sulfate anion interaction with vicinal Cu(111) surfaces

Nano-electrochemistry, i.e., the research of the properties of nano-(structured) electrodes and their influence on electrochemical processes when immersed inside an electrolyte, represents a hot topic in view of applications in nano-electronics, electro-catalysis and energy storage devices. The role of physical confinement in the electrochemical fabrication and performances of the respective systems have been recently addressed in the context of metal-organic networks on surfaces, but rarely of nano-structured bare metal surfaces, for instance, regularly stepped (vicinal) surfaces. In this work we investigate the interplay between physical confinement and adsorbate induced restructuring by the electrochemical adsorption of sulfate anions on the flat and two distinctly different vicinal Cu(111) surfaces. Sulfate adsorption on the flat Cu(111) surface is known to create a long-range ordered Moiré-superstructure with lattice parameters in the 2–4 nm range due to an expansion of the topmost layer of copper atoms with respect to the underlying crystal planes. This restructuring is also observed on a vicinal Cu(111) surface whose original terrace width is considerably smaller than the lattice vectors of the sulfate induced Moiré-structure. The results clearly indicate not only that the Moiré formation lifts the physical confinement imposed by the initial terrace width, but also shine more light on the Moiré formation process itself. Such adsorbate induced restructuring, of course, depends on the respective adsorbate – electrode combination, but must, in principle, always be taken into account in order to understand electrochemical processes at nano-structured (and nano-sized) electrode surfaces.

Preparation and Assembly of Carbon Nanotube/Silica Core-Shell Nanowires to Realize High-Density and Well-Aligned Nanotube Arrays with Uniform and Tunable Pitch

This study introduces a novel method to fabricate high-density, well-aligned arrays of carbon nanotubes (CNTs) with tunable pitch, utilizing a core-shell nanowire structure of CNTs and silica. The approach involves a modified Stober process to achieve controlled deposition of silicon dioxide around individual CNTs, forming robust core-shell nanowires. By optimizing the Stober process, the shell size can be precisely controlled down to sub 10nm scale while maintaining the individualized nature of the CNTs. Densely packed and precisely aligned CNT arrays are created using Langmuir-Schaefer process. After assembly, the silica shell, acting as a physical spacer, can be easily removed by HF etching, exposing the CNTs while maintaining their alignment. The developed high-density, well-aligned CNT arrays with tunable pitch show significant promise for applications in nanoelectronics, sensors, and other emerging technologies. This methodology offers a robust and scalable approach for CNT array fabrication, opening avenues for tailoring array properties to meet specific application requirements.

Effects of vacancy defects and atomic doping on the electronic and magnetic properties of puckered penta-like PdPSe monolayer: an Ab initio study

The experimental knowledge of two-dimensional penta-like PdPSe monolayer is largely based on a recent publication (Liet al2021Adv. Mater. 2102541). Therefore, the aim of our research is consequently to explore the effect of vacancy defects and substitutional doping on the electronic properties of the novel penta-PdPSe monolayer by using first-principles calculations. Penta-like PdPSe is a semiconductor with an indirect bandgap of 1.40 eV. We show that Pd and Se vacancy defected structures are semiconductors with band gaps of 1.10 eV and 0.95 eV respectively. While P single vacancy and double vacancy defected structures are metals. The doping with Ag (at Pd site) and Si (at P site) convert the PdPSe to nonmagnetic metallic monolayer while the doping with Rh (at Pd site), Se (at P site) and As (at site Se) convert it to diluted magnetic semiconductors with the magnetic moment of 1µB. The doping with Pt (at the Pd site), As (at the P site), S and Te (at Se site) are indirect semiconductors with a bandgap of ∼1.2 eV. We undertook this theoretical study to inspire many experimentalists to focus on penta-like PdPSe monolayer growth incorporating different impurities and by defect engineering to tune the novel two dimensional materials (PdPSe) properties for the advanced nanoelectronic application.

Intrinsic Out-Of-Plane and In-Plane Ferroelectricity in 2D AgCrS2 with High Curie Temperature.

2D ferroelectric materials have attracted extensive research interest due to potential applications in nonvolatile memory, nanoelectronics and optoelectronics. However, the available 2D ferroelectric materials are scarce and most of them are limited by the uncontrollable preparation. Herein, a novel 2D ferroelectric material AgCrS2 is reported that are controllably synthesized in large-scale via salt-assist chemical vapor deposition growth. By tuning the growth temperature from 800 to 900°C, the thickness of AgCrS2 nanosheets can be precisely modulated from 2.1 to 40nm. Structural and nonlinear optical characterizations demonstrate that AgCrS2 nanosheet crystallizes in a non-centrosymmetric structure with high crystallinity and remarkable air stability. As a result, AgCrS2 of various thicknesses display robust ferroelectric polarization in both in-plane (IP) and out-of-plane (OOP)directions with strong intercorrelation and high ferroelectric phase transition temperature (682 K). Theoretical calculations suggest that the ferroelectricity in AgCrS2 originates from the displacement of Ag atoms in AgS4 tetrahedrons, which changes the dipole moment alignment. Moreover, ferroelectric switching is demonstrated in both lateral and vertical AgCrS2 devices, which exhibit exotic nonvolatile memory behavior with distinct high and low resistance states. This study expands the scope of 2D ferroelectric materials and facilitates the ferroelectric-based nonvolatile memory applications.

Structural changes in Ge1−xSnx and Si1−x−yGeySnx thin films on SOI substrates treated by pulse laser annealing

Ge1−xSnx and Si1−x−yGeySnx alloys are promising materials for future opto- and nanoelectronics applications. These alloys enable effective bandgap engineering, broad adjustability of their lattice parameter, exhibit much higher carrier mobility than pure Si, and are compatible with the complementary metal-oxide-semiconductor technology. Unfortunately, the equilibrium solid solubility of Sn in Si1−xGex is less than 1% and the pseudomorphic growth of Si1−x−yGeySnx on Ge or Si can cause in-plane compressive strain in the grown layer, degrading the superior properties of these alloys. Therefore, post-growth strain engineering by ultrafast non-equilibrium thermal treatments like pulse laser annealing (PLA) is needed to improve the layer quality. In this article, Ge0.94Sn0.06 and Si0.14Ge0.8Sn0.06 thin films grown on silicon-on-insulator substrates by molecular beam epitaxy were post-growth thermally treated by PLA. The material is analyzed before and after the thermal treatments by transmission electron microscopy, x-ray diffraction (XRD), Rutherford backscattering spectrometry, secondary ion mass spectrometry, and Hall-effect measurements. It is shown that after annealing, the material is single-crystalline with improved crystallinity than the as-grown layer. This is reflected in a significantly increased XRD reflection intensity, well-ordered atomic pillars, and increased active carrier concentrations up to 4 × 1019 cm−3.

Phonon transport in vacancy induced defective stanene/hBN van der Waals heterostructure

In this study, Non-Equilibrium Molecular Dynamics (NEMD) simulation is employed to investigate the phonon thermal conductivity (PTC) of Sn/hBN van der Waals heterostructures with different vacancy-induced defects. We deliberately introduce three types of vacancies in Sn/hBN bilayer point vacancies, bivacancies, and edge vacancies at various concentrations ranging from 0.25% to 2%, to examine their effects on PTC across temperatures from 100 K to 600 K. The key findings of our work are (i) PTC declines monotonically with increasing vacancy concentration for all types of vacancies, with a maximum reduction of ∼62% observed at room temperature compared to its pristine form. (ii) The position of defects has an impact on PTC, with a larger decrease observed when defects are present in the hBN layer and a smaller decrease when defects are in the Sn layer. (iii) The type of vacancy also influences PTC, with point vacancies causing the most substantial reduction, followed by bivacancies, and edge vacancies having the least effect. A 2% defect concentration results in a ∼62% decrease in PTC for point vacancies, ∼51% for bivacancies, and ∼32% for edge vacancies. (iv) Finally, our results indicate that for a given defect concentration, PTC decreases as temperature increases. The impact of temperature on thermal conductivity is less pronounced compared to the effect of vacancies for the defective Sn/hBN bilayer. The presence of vacancies and elevated temperatures enhance phonon-defect and phonon–phonon scattering, leading to changes in the phonon density of states (PDOS) profile and the distribution of phonons across different frequencies of Sn/hBN bilayer, thus affecting its thermal conductivity. This work offers new insights into the thermal behavior of vacancy-filled Sn/hBN heterostructures, suggesting potential pathways for modulating thermal conductivity in bilayer van der Waals heterostructures for applications in thermoelectric, optoelectronics, and nanoelectronics in future.

Engineering the electronic properties of MoTe2 via defect control

ABSTRACT The remarkable electronic properties of monolayer MoTe2 make it a very adaptable material for use in optoelectronic and nano-electronic applications. MoTe2 growth often exhibits intrinsic defects, which significantly influence the material’s characteristics. In this work, we conducted a thorough investigation of the electronic characteristics of intrinsic defects, including point defects, in monolayer MoTe2 using first-principles calculations based on density functional theory (DFT). Our findings indicate that the presence of point defects leads to the formation of n-type properties as the Fermi level situates above the conduction band. Our first-principles density functional theory calculation revealed an appearance of donor level in the band gap close to the conduction band in MoTe2. Our study signifies that the formation energy of a vacancy in a Te atom is lower than that of both a vacancy in a Mo atom and two vacancies in Te atom. This suggests that during the synthesis process, it is more probable for Te atom vacancies to be created. A defect in the pristine monolayer of MoTe2 leads to a slight decrease in the band gap, causing a transition from a direct band gap semiconductor to an indirect band gap semiconductor. The results of our study indicate that the presence of vacancy defects may modify the electronic properties of monolayer MoTe2, suggesting its potential as a new platform for electronic applications. Hence, our analysis offers significant theoretical backing for defect engineering in MoTe2 monolayers and other 2D materials, a critical aspect in the advancement of nanoscale devices with the desired functionality.