Applications In Integrated Photonics Research Articles

Topological Cavity Chains via Shifted Photonic Crystal Interfaces

Recent advances in topological photonics provide unprecedented opportunities to realize a photonic cavity. A recent work shows that the electromagnetic wave can be effectively trapped via the shifted photonic crystal interfaces (SPCIs), which offers an alternative approach to realizing the photonic cavity. Here, we proposed one-dimensional topological insulators based on an SPCIs-induced cavity chain, which is analogous to the Su–Schrieffer–Hegger model and is compatible with the silicon-on-insulator platform. Owing to the asymmetry feature of SPCIs-induced cavities, the topological cavity chains can be either realized by alternating the cavity modes or by tuning the distance between two cavities. The nontrivial band topology of SPCIs-induced cavity chains is further confirmed by observing topological end states, which exhibit robustness against geometrical imperfections. Our work holds promises for designing robust photonic devices, which may find potential applications in future integrated photonics.

Analysis of optical gain and attenuation coefficient in erbium–ytterbium-doped sodium-zinc phosphate glasses for integrated photonics applications

The search for host glasses capable of incorporating high concentrations of erbium ions has attracted considerable attention, largely due to their straightforward application in integrated photonics. This paper presents a comprehensive characterization of the net gain coefficient in sodium-zinc phosphate glasses doped under four configurations: 1% erbium, and co-doping of 1% erbium with 1% ytterbium. Experimental analysis reveals that all doping configurations exhibit similar attenuation coefficients. For pump power levels between 14.5 and 16.5 dBm, the 1% erbium and 1% erbium-1%ytterbium co-doped samples outperform those doped with 2% erbium and 2% erbium-1%ytterbium in both on–off gain and net gain. Furthermore, while the 1% erbium sample shows a higher net gain up to 16 dBm, the co-doped 1% erbium–ytterbium sample exhibits superior net gain at higher pump power levels.

Elevating NIR photonic integration with tantalum-niobium pentoxide

In this study, we present a novel material platform based on tantalum-niobium pentoxide (TaNbO5) for integrated photonics applications. TaNbO5 demonstrates exceptional attributes suitable for both linear and nonlinear optics across a wide range of near-infrared wavelengths. Our analysis of the TaNbO5 unit cell revealed crucial lattice parameters and a direct band gap value of 2.268 eV. At a wavelength of 1550 nm, TaNbO5 exhibits a refractive index of 2.22, an extinction coefficient of 5.24 × 10−4, and other optical properties. We determine a 0.8 μm cut-off core width for single-mode TaNbO5 waveguides, which achieve efficiencies exceeding 99% for single-mode configurations and 98% for multimode structures. When coupled with conventional waveguides, TaNbO5 waveguides demonstrate excellent transmission characteristics. Notably, at a wavelength of 1.55 μm, the single-mode waveguide exhibits minimal excess loss. These findings highlight the significant potential of TaNbO5 waveguides for various near-infrared applications, emphasizing their versatility and promising performance.

Programmable multi-wavelength distributed feedback laser array integrated in a liquid crystal polymer waveguide.

Liquid crystal (LC) distributed feedback (DFB) lasers hold significant potential for integrated photonics applications. However, limitations in wavelength spacing for wavelength switching, device size, and compatibility with other technologies have impeded advancements of the LC DFB laser in integration and responsiveness. Herein, we propose a thin-film multi-wavelength DFB laser array utilizing high-resolution patterned programmable nematic LC polymers, enabling rapid switching with high-resolution wavelength spacing between wavelength division multiplexing channels while maintaining a stable single longitudinal mode (SLM) for each laser. The underlying physical mechanism involves modulating the effective refractive index of the DFB laser by varying the LC molecules' orientation angles between adjacent regions of the LC grating to achieve wavelength modulation. Additionally, a specialized LC waveguide design connects the DFB lasers, facilitating wavelength modulation as well as straight-line and bending propagation of the laser. Furthermore, the laser array demonstrates a relatively low energy threshold, facilitating its applications in high-integration scenarios.

Low-loss and low-temperature Al2O3 thin films for integrated photonics and optical coatings

Amorphous aluminum oxide (Al2O3) is a key material in optical coatings due to its notable properties, including a broad transparency window (ultraviolet to mid-infrared) and excellent durability. Moreover, its higher refractive index contrast relative to silica cladding layers and high solubility of rare-earth ions make it well suited for optical waveguides and the development of various functionalities in integrated photonics. In many coatings and integrated photonics applications, the substrates are temperature and stress sensitive, while relatively thick (∼1 μm) alumina layers are required; thus, it is crucial to fabricate low optical loss alumina thin films at low deposition temperatures, while maintaining high deposition rates. In this study, plasma-assisted reactive magnetron sputtering, operated in an alternating current mode, is investigated as a reliable, straightforward, and wafer-scale compatible technique for the deposition of high optical quality and uniform Al2O3 thin films at low temperature. One-micrometer-thick amorphous Al2O3 planar waveguides, deposited at 150 °C and a rate of 23.3 nm/min, exhibit optical losses below 1 dB/cm at 638 nm and as low as 0.1 dB/cm in the conventional optical communication band.

(Invited) Shape Engineering of Nanostructured III-V Semiconductor Lasers

Group III-V semiconductors have revolutionised electronics and optoelectronics due to their superior physical and optoelectronic properties including high carrier mobility, direct bandgap and band structure engineering capability. Reducing the device size to nanoscale brings many unique properties, such as large surface-area-to-volume ratio, high aspect ratio, carriers and photons confinement effect. These nanostructures have already been demonstrated for potential applications in light emitters, photodetectors, solar cells and for photoelectrochemical water splitting. However, to date most efforts on the growth of these nanostructures have been limited to nanowires.In this talk, we demonstrate selective area growth of III-V nanostructures, showing the possibility of obtaining other functional nanostructures, beyond the limitation of rod-like geometry. We demonstrate that by changing the pattern design on the mask and growth conditions, we are able to grow and control the shapes to form nanostructures such as membranes, flowers, rings, spirals, stars, ellipses etc. These shape-engineered nanostructures open up possibilities of new applications based on devices with novel geometries.In particular, we will show the results of our InP micro-ring lasers which have excellent cavity due to the atomically flat facets. Micro-disk and micro-ring lasers are light emitting devices that operate in the whispering gallery mode. They are important components for integrated photonics applications as light from can these devices can be efficiently coupled to on-chip waveguides. By coupling the micro-ring laser to a nanowire antenna, we further demonstrate that we can tune the emission directionality to the device.

Integration of O-band quantum dot lasers with AlGaN/GaN waveguides.

We integrate edge-emitting etched-facet InAs/GaAs quantum dot (QD) lasers to an AlGaN/GaN-on-sapphire waveguide platform via micro-transfer printing. The lasers are placed into a trench etched into the sapphire substrate so as to transversely align the waveguides. The AlGaN/GaN waveguide structure is designed to allow for tolerant alignment of the active lasing mode to the passive waveguide mode. 4 μm wide waveguides show a TE propagation loss of 4.5 dB/cm. For a QD laser with a 1.2 mm long cavity and 3.5 μm wide ridge waveguide, 2.3 mW was measured at 80 mA under continuous wave conditions from the end of a 0.64 cm long 4 μm wide waveguide with an estimated coupling efficiency of >20 %. The measured coupled output power is 1.5 mW at 70°C and 100 mA. To our knowledge, this is the first demonstration of the heterogeneous integration of a GaAs lasing device to a GaN-based PIC by any means. The results show real promise for GaN to be a suitable platform for integrated photonics applications requiring O-band operation.

Epitaxial twin coupled microstructure in GeSn films prepared by remote plasma enhanced chemical vapor deposition

Growth of GeSn films directly on Si substrates is desirable for integrated photonics applications since the absence of an intervening buffer layer simplifies device fabrication. Here, we analyze the microstructure of two GeSn films grown directly on (001) Si by remote plasma-enhanced chemical vapor deposition (RPECVD): a 1000 nm thick film containing 3% Sn and a 600 nm thick, 10% Sn film. Both samples consist of an epitaxial layer with nano twins below a composite layer containing nanocrystalline and amorphous. The epilayer has uniform composition, while the nanocrystalline material has higher levels of Sn than the surrounding amorphous matrix. These two layers are separated by an interface with a distinct, hilly morphology. The transition between the two layers is facilitated by formation of densely populated (111)-coupled nano twins. The 10% Sn sample exhibits a significantly thinner epilayer than the one with 3% Sn. The in-plane lattice mismatch between GeSn and Si induces a quasi-periodic misfit dislocation network along the interface. Film growth initiates at the interface through formation of an atomic-scale interlayer with reduced Sn content, followed by the higher Sn content epitaxial layer. A corrugated surface containing a high density of twins with elevated levels of Sn at the peaks begins forming at a critical thickness. Subsequent epitaxial breakdown at the peaks produces a composite containing high levels of Sn nanocrystalline embedded in lower level of Sn amorphous. The observed microstructure and film evolution provide valuable insight into the growth mechanism that can be used to tune the RPECVD process for improved film quality.

Surface wave control via unidirectional surface magnetoplasmon waveguide arrays

Freely tailoring the wavefronts of surface waves (SWs), including surface plasmon polaritons (SPPs) and their equivalent counterparts, holds significant importance in the field of on-chip photonics. However, conventional diffraction-optics based devices often suffer from limited functionalities and low working efficiencies. Here, we present a novel concept of a unidirectional surface magnetoplasmon (USMP) waveguide array composed of carefully engineered subwavelength-spaced unidirectional waveguide slits. By utilizing the unique propagation properties of USMPs within these waveguides, the USMP waveguide array efficiently converts USMPs into SWs with predetermined wavefronts. As proof of the concept, we numerically demonstrate this new principle through the design of two microwave USMP waveguide arrays using a metal-air-YIG structure, which directly converts USMPs into SWs with the wavefronts of Bessel beam and focusing. Additionally, we extend this concept to the terahertz regime and achieve beam deflection of SWs using a metal-air-semiconductor waveguide array. These findings may inspire the development of highly miniaturized on-chip devices for integrated photonics applications.

Giant electric field-induced second harmonic generation in polar skyrmions

Electric field-induced second harmonic generation allows electrically controlling nonlinear light-matter interactions crucial for emerging integrated photonics applications. Despite its wide presence in materials, the figures-of-merit of electric field-induced second harmonic generation are yet to be elevated to enable novel device functionalities. Here, we show that the polar skyrmions, a topological phase spontaneously formed in PbTiO3/SrTiO3 ferroelectric superlattices, exhibit a high comprehensive electric field-induced second harmonic generation performance. The second-order nonlinear susceptibility and modulation depth, measured under non-resonant 800 nm excitation, reach ~54.2 pm V−1 and ~664% V−1, respectively, and high response bandwidth (higher than 10 MHz), wide operating temperature range (up to ~400 K) and good fatigue resistance (>1010 cycles) are also demonstrated. Through combined in-situ experiments and phase-field simulations, we establish the microscopic links between the exotic polarization configuration and field-induced transition paths of the skyrmions and their electric field-induced second harmonic generation response. Our study not only presents a highly competitive thin-film material ready for constructing on-chip devices, but opens up new avenues of utilizing topological polar structures in the fields of photonics and optoelectronics.

Defects distribution and evolution in selected-area helium ion implanted 4H–SiC

An experimental demonstration of the generation of VSi, CSiVC, and NCVSi color centers in 4H–SiC using helium ion microscope irradiation of 5 × 5 μm2 areas with subsequent annealing treatment is presented. With the aid of transmission electron microscopy (TEM), photoluminescence (PL) and cathodoluminescence (CL) spectroscopy and Raman stress analysis, the evolution and distribution of color centers were thoroughly investigated. Cross-sectional TEM revealed the presence of helium bubbles in the center of the regions implanted with high doses which account for the observed quench of PL emission in the center of the implanted regions in both PL and CL measurements. PL spectra from the virgin, implanted and annealed samples proved the appearance of VSi after implantation and the transformation from VSi to CSiVC and NCVSi centers after annealing at 1000 °C. Moreover, with the increase of the implantation dose, the area of NCVSi centers increases whereas that of CSiVC decreases, which provide the first evidence of the competitive relationship between the formation of CSiVC and NCVSi defects. The comparison between stress distribution and CSiVC defect distribution illustrated that CSiVC centers predominantly distributed around the surface rupture region after thermal annealing where significant stress repair occurred. The results show that focused helium ion implantation holds promise for the precise coupling of VSi, CSiVC and NCVSi centers in predefined locations in integrated photonics applications.

Structural engineering of two-dimensional black phosphorus towards advanced photonic integrated circuits

Structural engineering is crucial for tuning the properties of artificial materials. As one of the most important two-dimensional (2D) materials, black phosphorus (BP) has been rediscovered in 2014 and attracted tremendous attentions all over the world. It shows great potentials in optoelectronic and integrated photonic applications due to the direct and tunable bandgap, high carrier mobility, and intrinsic anisotropy. However, some deficiencies are yet to be settled before its large-scale applications, such as the massive synthesis methods and structure–property relationship. To investigate the influence of structural engineering on the performance of 2D BP-based devices thoroughly, recent studies on deformation, atomic defects, superlattice, alloying, thickness and phase transition are maximality summarized in this review covering from the intrinsic properties to optoelectronic applications. Benefiting from the broad research in this field, challenges and opportunities of 2D BP for advanced integrated photonic applications are also provided, which supplies a useful reference to realize large-scale 2D BP-based all-optical communications in future.

Ultra-Broadband Integrated Optical Filters Based on Adiabatic Optimization of Coupled Waveguides

Broadband spectral filters are highly sought-after in many integrated photonics applications such as ultra-broadband wavelength division multiplexing, multi-band spectroscopy, and broadband sensing. In this study, we present the design, simulation, and experimental demonstration of compact and ultra-broadband silicon photonic filters with adiabatic waveguides. We first develop an optimization algorithm for coupled adiabatic waveguide structures, and use it to design individual, single-cutoff spectral filters. These single-cutoff filters are 1×2 port devices that optimally separate a broadband signal into short-pass and long-pass outputs, within a specified device length. We control the power roll-off and extinction ratio in these filters using the adiabaticity parameter. Both outputs of the filters operate in transmission, making it possible to cascade multiple filters in different configurations. Taking advantage of this flexibility, we cascade two filters with different cutoff wavelengths on-chip, and experimentally demonstrate band-pass operation. The independent and flexible design of these band edges enables filters with bandwidths well over 100 nm. Experimentally, we demonstrate band-pass filters with passbands ranging from 6.4 nm up to 96.6 nm. Our devices achieve flat-band transmission in all three of the short-pass, band-pass, and long-pass outputs with less than 1.5 dB insertion loss and extinction ratios of over 15 dB. These ultra-broadband filters can enable new capabilities for multi-band integrated photonics in communications, spectroscopy, and sensing applications.

Nanoscale multi-beam lithography of photonic crystals with ultrafast laser

Photonic crystals are utilized in many noteworthy applications like optical communications, light flow control, and quantum optics. Photonic crystal with nanoscale structure is important for the manipulation of light propagation in visible and near-infrared range. Herein, we propose a novel multi beam lithography method to fabricate photonic crystal with nanoscale structure without cracking. Using multi-beam ultrafast laser processing and etching, parallel channels with subwavelength gap are obtained in yttrium aluminum garnet crystal. Combining optical simulation based on Debye diffraction, we experimentally show the gap width of parallel channels can be controlled at nanoscale by changing phase holograms. With the superimposed phase hologram designing, functional structures of complicated channel arrays distribution can be created in crystal. Optical gratings of different periods are fabricated, which can diffract incident light in particular ways. This approach can efficiently manufacture nanostructures with controllable gap, and offer an alternative to the fabrication of complex photonic crystal for integrated photonics applications.

Proton radiation effects on optically transduced silicon carbide microdisk resonators

Circular microdisk mechanical resonators vibrating in their various resonance modes have emerged as important platforms for a wide spectrum of technologies including photonics, cavity optomechanics, optical metrology, and quantum optics. Optically transduced microdisk resonators made of advanced materials such as silicon carbide (SiC), diamond, and other wide- or ultrawide-bandgap materials are especially attractive. They are also of strong interest in the exploration of transducers or detectors for harsh environments and mission-oriented applications. Here we report on the first experimental investigation and analysis of energetic proton radiation effects on microdisk resonators made of 3C-SiC thin film grown on silicon substrate. We fabricate and study microdisks with diameters of ∼48 µm and ∼36 µm, and with multimode resonances in the ∼1 to 20 MHz range. We observe consistent downshifts of multimode resonance frequencies, and measure fractional frequency downshifts from the first three flexural resonance modes, up to ∼-3420 and -1660 ppm for two devices, respectively, in response to 1.8 MeV proton radiation at a dosage of 1014/cm2. Such frequency changes are attributed to the radiation-induced Young’s modulus change of ∼0.38% and ∼0.09%, respectively. These devices also exhibit proton detection responsivity of ℜ ≈ -5 to -6 × 10−6 Hz/proton. The results provide new knowledge of proton radiation effects in SiC materials, and may lead to better understanding and exploitation of micro/nanoscale devices for harsh-environment sensing, optomechanics, and integrated photonics applications.

Dual-Modal Nanoplasmonic Light Upconversion through Anti-Stokes Photoluminescence and Second-Harmonic Generation from Broadband Multiresonant Metal Nanocavities.

Metal nanocavities can generate plasmon-enhanced light upconversion signals under ultrashort pulse excitations through anti-Stokes photoluminescence (ASPL) or nonlinear harmonic generation processes, offering various applications in bioimaging, sensing, interfacial science, nanothermometry, and integrated photonics. However, achieving broadband multiresonant enhancement of both ASPL and harmonic generation processes within the same metal nanocavities remains challenging, impeding applications based on dual-modal or wavelength-multiplexed operations. Here, we report a combined experimental and theoretical study on dual-modal plasmon-enhanced light upconversion through both ASPL and second-harmonic generation (SHG) from broadband multiresonant metal nanocavities in two-tier Ag/SiO2/Ag nanolaminate plasmonic crystals (NLPCs) that can support multiple hybridized plasmons with high spatial mode overlaps. Our measurements reveal the distinctions and correlations between the plasmon-enhanced ASPL and SHG processes under different modal and ultrashort pulsed laser excitation conditions, including incident fluence, wavelength, and polarization. To analyze the observed effects of the excitation and modal conditions on the ASPL and SHG emissions, we developed a time-domain modeling framework that simultaneously captures the mode coupling-enhancement characteristics, quantum excitation-emission transitions, and hot carrier population statistical mechanics. Notably, ASPL and SHG from the same metal nanocavities exhibit distinct plasmon-enhanced emission behaviors due to the intrinsic differences between the incoherent hot carrier-mediated ASPL sources with temporally evolving energy and spatial distributions and instantaneous SHG emitters. Mechanistic understanding of ASPL and SHG emissions from broadband multiresonant plasmonic nanocavities marks a milestone toward creating multimodal or wavelength-multiplexed upconversion nanoplasmonic devices for bioimaging, sensing, interfacial monitoring, and integrated photonics applications.

Deep Subwavelength Anti-Slot Photonic Crystals Fabricated in Monolithic Silicon Photonics Technology

We report the scalable fabrication and characterization of photonic crystal (PhC) nanobeam waveguides incorporating subwavelength-scale dielectric anti-slot unit cells. These anti-slot PhCs were fabricated using deep UV lithography on a monolithic silicon photonics technology. The dielectric band edge mode is characterized by strong field localization in the anti-slot region where the minimum dielectric feature size is approximately 70 nm. This demonstration opens the door to further investigation of subwavelength engineered photonic structures fabricated using commercial foundry processes for integrated photonics applications that benefit from enhanced light-matter interaction.

Efficiently Controlling near-Field Wavefronts via Designer Metasurfaces

Freely tailoring the wavefronts of surface waves (SWs) plays a vital role in on-chip photonics applications, but diffraction-optics based devices usually exhibit limited tuning functionalities and low working efficiencies. Here, we propose a new strategy to manipulate the near-field wavefronts of SWs with Pancharatnam–Berry (PB) metasurfaces exhibiting predesigned phase profiles. As a SW beam flows across such a metasurface, waves scattered by different PB meta-atoms interfere with each other, forming a new SW wavefront under appropriate wavevector matching condition. As a proof of concept, we design and fabricate a series of PB metasurfaces working in the microwave regime and experimentally demonstrate that they can efficiently realize SW manipulations, including deflection, focusing, Bessel beam, and Airy beam generations. These findings may inspire the realization of highly miniaturized on-chip devices for integrated photonics applications.

CsPbBr3 nanocrystals plasmonic distributed Bragg reflector waveguide laser

The recent development of perovskite-based lasers showcased the outstanding optical properties of the material such as high absorption coefficient and high quantum yield. The lasers were demonstrated in the form of nanowires and nanoplates, which are difficult to be integrated on a chip in the form of high-density arrays due to the difficulties in positioning them on the chip. The solution to this problem should be to use the well-known lithography process in the fabrication process of the lasers. In this work, we demonstrate several perovskite-based plasmonic lasers that were fabricated by using the lithographic in-mold patterning method that relies on the electron beam lithography process. The lasers utilized CsPbBr3 perovskite nanocrystals as the gain material and plasmonic distributed Bragg reflector grating structure as the optical feedback provider to achieve a low lasing threshold of 42.5 μJ/cm2 with a linewidth of 0.6 nm (FWHM) at room temperature. The use of the lithographic process in the fabrication of the lasers makes it possible to fabricate and integrate them on a chip in a relatively high-density manner, so that they can be used extensively in quantum optics and on-chip integrated photonics applications.

Pulsed heterodyne interferometry for nonlinear SOI waveguide characterization

Silicon waveguides are a promising candidate for integrated nonlinear optics applications. Nonlinear coefficients of Silicon on Insulator (SOI) waveguides have been previously measured using techniques such as Z-scan, D-scan, Four Wave Mixing (FWM) and Self-phase modulation. However, they have several drawbacks such as they operate at high power or are cumbersome to setup and require multiple measurements to determine all the coefficients. In this work, we develop a direct and single measurement technique to characterize the nonlinear processes in SOI waveguides. This is achieved by employing a heterodyne interferometric technique to accurately measure minute nonlinear response. The measured nonlinear amplitude and phase shifts are fit to extract third-order nonlinear coefficients of Two-photon absorption, Kerr nonlinear index, Free carrier absorption and Free carrier dispersion. The obtained coefficients for SOI waveguides are close to that found in literature measured using the above-mentioned techniques. The advantages of this method include easy interpretation of the output signal and relatively low power of operation. It is especially advantageous for studying materials such as Phase Change Materials (PCM) in which phase changes occur dynamically. This aspect is quite promising for characterizing emerging materials for integrated photonics applications.